CNEL DC34, DB4, DB6, DB3 Datasheet
CE DB3/DC34/DB4/DB6
CHENYI ELECTRONICS
FEATURES
The three layer,two terminal, axial lead, hermetically sealed diacs are
designed specifically for triggering thyristors. They demonstrate low breakover
current at breakover voltage as they withstand peak pulse current,The breakover
symmetry is within three volts(DB3,DC34,DB4)or four volts(DB6).These diacs are
intended for use in thyrisitors phase control, circuits for lamp dimming,universal
motor speed control, and heat control.
JF's DB3/DC34/DB4/DB6 are bi-directional trigged diode designed to operate
in conjunction with Triacs and SCR's
ABSOLUTE RATINGS(LIMITING VALUES)
SILICON BIDIRECTIONAL DIAC
ParametersSymbols Units
Pc
ITRM
Power Dissipation on Printed
Circuit(L=10mm)
Repetitive Peak in-state tp=10u s
Current F=100Hz
TA=50 150
TSTG/TJ Storage and Operating Junction Temperature
DB3 DC34 DB4 DB6
2.0
Value
mW
2.0 2.0 1.6
-40 to +125/-40 to 110
ELECTRCAL CHARACTERISTICS
Symbols Parameters
VBO Breakover Voltage(Note 2)
|+VBO|- c=22nF(Note 2)
|-VBO| See diagram1
| V|
Vo See diagram2 Min V
IBO c=22nF(Note 2) Max
tr See Diagram 3 Typ S
IB Leakage Current(Note 1)
Notes: 1. Electrical characteristics applicable in both forward and reverse directions.
2. Connected in parallel with the devices.
Breakover Voltage Symmetry
Dynamic Breakover
Voltage(Note 1)
Output Voltage(Note 1)
Breakover Current(Note 1)
Rise Time(Note 1)
Test Conditions
DB3 DC34 DB4 DB6
c=22nF(Note 2)
See diagram1 Typ 32 34 40 60
IBO to IF=10mA)
I=(
See diagram1
VB=0.5 VBO max
see diagram 1
Min 28 30 35 56
Max 36 38 45 70
Max
Min
Max
Value
3 4
5
5
100
1.5
10
10
A
Units
V
V
V
A
A
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 2
CE DB3/DC34/DB4/DB6
CHENYI ELECTRONICS
SILICON BIDIRECTIONAL DIAC
RATINGS AND CHARACTERISTIC CURVES DB3/DC34/DB4/DB6
DIAGRAM 1: Current-voltage charateristics DIAGRAM 2: Test circuit for output voltage
DIAGRAM 3: Test circuit see diagram2 adjust R for
Ip=0.5A
FIG.1-Power disspation versus ambient
temperature(maximum values)
FIG.3-Peak pulse current versus pulse duration
(maximum values)
FIG.2-Relative variation of VBO versus juntion
temperature(typical values)
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 2 of 2
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