CNEL 1N914, 1N4454, 1N4453, 1N4451, 1N4450 Datasheet

CE 1N914 THRU 1N4454

CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE

FEATURES

. Silicon epitaxial planar diode
. Fast swithching diodes
. 1N4149, 1N4447, 1N4449 are also
avaible in glass case DO-34

MECHANICAL DATA

. Case: DO-35 glass case
. Polarity: Color brand denotes cathode end
. Weight: Approx. 0.13gram

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Type

1N914

1N4149

1N4150
1N4152
1N4153

1N4154
1N4447
1N4449

1N4450

1N4451

1N4453

1N4454

Peak Max. Max. Max.
reverse Aver. Power Junction
voltage Rectified Dissip tempera-

V

RM(V) Current At 25 ture

I(AV)Ma Ptot(mW) TJ VF at IF IR at trr(ns)

100 75 500 200 1.0 10 25 20 4.0 I

1)

1)

1)

100 150 500 200 1.0 10 25 20 4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA

50 200 500 200 1.0 200 100 50 4.0 I
40 150 400 175 0.55 0.10 50 30 2.0 I
75 150 400 175 0.55 0.10 50 50 2.0 I

35 150
100 150 500 200 1.0 20 25 20 4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
100 150 500 200 1.0 30 25 20 4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA

40 150 400 175 0.54 0.50 50 30 4.0 I

40 150 400 175 0.50 0.10 50 30 10 I

30 150 400 175 0.55 0.01 50 20

75 150 400 175 1.0 10 100 50 4.0 I

2) 500 200 1.0 0.10 100 25 2.0 IF=10mA, VR=6V, RL=100 , to IR=1mA

Max.

Forward

Voltage

Max.

Reverse

Current

drop

(V) (mA) (nA) V

Max. Reverse Recovery Time

Test conditions

R(V) Max.

F=10mA, VR=6V, RL=100 , to IR=1mA

F=IR=10 to 200mA, to 0.1 IF
F=10mA, VR=6V, RL=100 , to IR=1mA
F=10mA, VR=6V, RL=100 , to IR=1mA

F=IR=10mA to, IR=1mA
F=IR=10mA to, IR=1mA

F=IR=10mA to, IR=1mA

Notes: 1.These diodes are also available in glass case DO-34

2.Valid provided that leads at a distance of 8mm from case are kept at ambient temperature parameters for diodes
in case DO-34: P

tot=300mW TSTG=-65 to +175

Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD

TJ=175 R JA=400K/W

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