CNEL 1N4448 Datasheet

CE 1N4448

CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE

FEATURES

. Silicon epitaxial planar diode
. Fast swithching diodes
. 500mW power dissipation
. The diode is also available in the Mini-MELF case with the type
designation LL4448

MECHANICAL DATA

. Case: MinMelf glass case(SOD- 80)
. Weight: Approx. 0.05gram

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Ratings at 25 ambient temperature unless otherwise specified)

Symbol Value Units

Reverse voltage VR 75 Volts
Peak reverse voltage V
Average rectified current, Half wave rectification with I
Resistive load at T
Surge forward current at t<1S and T
Power dissipation at T
Junction temperature T

Storage temperature range TSTG -65 to + 175

1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35)

A=25 and F 50Hz

J=25 IFSM 500 mW

A=25 Ptot 5001) mW

RM 100 Volts

AV 1501) mA

J 175

ELECTRICAL CHARACTERISTICS

(Ratings at 25 ambient temperature unless otherwise specified)

Symbols Min. Typ. Max. Units

Forward voltage at I

Leakage current at V
at V

F=5mA VF 0.62 0.72 V

at IF=10mA V

R=20V IR 25 nA

R=75V IR 5 A

F 1 V

at VR=20V, TJ=150 IR 50 A

Junction capacitance at V
Reverse breakdown voltage tested with 100 A puse V
Reverse recovery time from IF=10mA to IR=1mA, 4

R=6V, RL=100

V
Thermal resistance junction to ambient R
Rectification efficience at f=100MHz,VRF=2V 0.45

1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)

R=VF=0V CJ 4 pF

(BR)R 100 V

rr ns

t

JA 3501) 3501)

Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD

Page 1 of 3

CE 1N4448

CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE

RATINGS AND CHATACTERISTIC CURVES LL4448

FIG.2-DYNAMIC FORWARD RESISTANCE

FLG.1-FORWARD CHARACTERISTICS VERSUS FORWARD CURRENT

FIG.3-ADMISSIBLE POWER DISSIPATION FIG.4-RELATIVE CAPACITANCE VERSUS
VERSUS AMBIENT TEMPERATURE VOLTAGE

Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD

Page 2 of 3