CNEL 1N4151 Datasheet
CE 1N4151
CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE
FEATURES
. Silicon epitaxial planar diode
. Fast swithching diodes
. 500mW power dissipation
. The diode is also available in the Mini-MELF case with the type
designation LL4151
MECHANICAL DATA
. Case: DO-35 glass case
. Polarity: Color brand denotes cathode end
. Weight: Approx. 0.13gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbol Value Units
Reverse voltage VR 50 Volts
Peak reverse voltage V
Average rectified current, Half wave rectification with I
Resistive load at T
Surge forward current at t<1S and T
Power dissipation at T
Junction temperature T
Storage temperature range TSTG -65 to + 175
1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35)
A=25 and F 50Hz
J=25 IFSM 500 Ma
A=25 Ptot 5001) Mw
RM 75 Volts
AV 1501) mA
J 175
ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbols Min. Typ. Max. Units
Forward voltage V
Leakage current at V
R=50V IR 50 nA
F 1 Volts
at VR=20V, TJ=150 IR 50 A
Junction capacitance at V
Reverse breakdown voltage tested with 5 A pulse V
Reverse recovery time from IF=10mA to IR=10mA to IR=1mA, trr 4 ns
from I
Thermal resistance junction to ambient R
Rectification efficience at f=100MHz,V
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
F=10mA to IR=1mA to IR=1mA, VR=6V.RL=100 trr 4.000 ns
R=VF=0V CJ 75 2 pF
(BR)R
JA 3501) K/W
RF=2V 0.45
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 3
CE 1N4151
CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE
RATINGS AND CHATACTERISTIC CURVES 1N4151
FIG.2-DYNAMIC FORWARD RESISTANCE
FLG.1-FORWARD CHARACTERISTICS VERSUS FORWARD CURRENT
FIG.3-ADMISSIBLE POWER DISSIPATION FIG.4-RELATIVE CAPACITANCE VERSUS
VERSUS AMBIENT TEMPERATURE VOLTAGE
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 2 of 3
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