CNEL 1N4148 Datasheet
CE 1N4148
. The diode is also available in the Mini-Melf case with the type
CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE
FEATURES
. Silicon epitaxial planar diode
. Fast swithching diodes
. 500mW power dissipation
designation LL4148
MECHANICAL DATA
. Case: DO-35 glass case
. Polarity: Color brand denotes cathode end
. Weight: Approx. 0.13gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbol Value Units
Reverse voltage VR 75 Volts
Peak reverse voltage V
Average rectified current, Half wave rectification with I
Resistive load at T
Surge forward current at t<1S and T
Power dissipation at T
Junction temperature T
Storage temperature range TSTG -65 to + 175
1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35)
A=25 and F 50Hz
J=25 IFSM 500 mA
A=25 Ptot 5001) mW
RM 100 Volts
AV 150 mA
J 175
ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbols Min. Typ. Max. Units
Forward voltage V
Leakage current at V
at V
R=20V IR 25 nA
R=75V IR 5 nA
F 1 Volts
at VR=20V, TJ=150 IR 50 nA
Junction capacitance at V
Voltage rise when switching ON tested with 50mA 2.5 Volts
pulse Tp=0.1 S, Rise time<30 S, f
Reverse recovery time from I
R=6V, RL=100
V
Thermal resistance junction to ambient R
Rectification efficience at f=100MHz,V
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
R=VF=0V CJ 4 pF
p=5 to 100KHz
F=10mA to IR=1mA, trr 4 ns
Vfr
JA 350 K/W
RF=2V 0.45
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
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CE 1N4148
CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE
RATINGS AND CHATACTERISTIC CURVES 1N4148
FIG.2-DYNAMIC FORWARD RESISTANCE
FLG.1-FORWARD CHARACTERISTICS VERSUS FORWARD CURRENT
FIG.3-ADMISSIBLE POWER DISSIPATION FIG.4-RELATIVE CAPACITANCE VERSUS
VERSUS AMBIENT TEMPERATURE VOLTAGE
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 2 of 3
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