CLARE ITC135P Datasheet

1
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ITC135P
DS-ITC135P-Rxx
The Integrated Telecom Circuit combines a 1-Form-A solid state relay, bridge rectifier, Darlington transistor, optocou­pler and zener diodes into one 16 pin SOIC package, con­solidating designs and reducing component count in telecom applications. The ITC135P’s optocoupler provides half wave ring detection.
Data/Fax Modem
Voice Mail Systems
Telephone Sets
Computer Telephony Integration
Cable TV Modems
UL Recognized: File Number E76270
CSA Certified: File Number LR 43639-12
BSI Certified:
BS EN 60950:1992 (BS7002:1992)
Certificate #: 7969
BS EN 41003:1993
Certificate #: 7969
Small 16 Pin SOIC Package (PCMCIA Compatible)
Board Space and Cost Savings
2mW Hookswitch Drive Power (Logic Compatible)
No Moving Parts
3750V
RMS
Input/Output Isolation
FCC Compatible Part 68
Full-Wave Bridge Rectifier
Darlington Transistor for Electronic Inductor “Dry”
Circuits
Half Wave Current Detector for Ring Signal or Loop
Current Detect
Current Limiting and Tape & Reel Versions Available
JEDEC Standard Pin Out
Includes Zener Diodes
Applications
Features
Description
Approvals
Integrated Telecom Circuits
Ordering Information
Part # Description
ITC135P 16 Pin SOIC (50/Tube) ITC135P 16 Pin SOIC (1000/Reel)
Pin Configuration
C
ITC135P Units
Relay Load Voltage 350 V Relay Load Current 120 mA Relay Max R
ON
15
Bridge Rectifier Reverse
Voltage 100 V Darlington Collector Current 120 mA Darlington Current Gain 10,000 -
1
(N/C)
LED - Form A Relay
LED - Form A Relay
+ Zener Diode (cathode)
– Zener Diode (anode)
+ Zener Diode (cathode)
ollector - Phototransistor
Emitter - Phototransistor
2
3
4
5
6
7
8
ITC135P
PV
Denotes half-wave detection
*
16
15
14
13
12
11
10
9
*
Output Form A
Output Form A/Bridge Input –/+
Darlington Base
Darlington Emitter
Bridge Output +/Darlington Collector/ + Zener Diode (cathode)
Bridge Output –/– Zener Diode (anode)
LED - Phototransistor –/+
LED - Phototransistor +/–
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ITC135P
Rev. X
Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this data sheet is not implied. Exposure of the device to the absolute maximum ratings for an extended period may degrade the device and effect its reliability.
Absolute Maximum Ratings (@ 25˚ C)
2
Parameter Min Typ Max Units
Total Package Dissipation - - 1
1
W Isolation Voltage Input to Output 3750 - - V
RMS
Operational Temperature -40 - +85 °C Storage Temperature -40 - +125 °C Soldering Temperature - - +220 °C
(10 Seconds Max.)
1
Above 25˚ derate linerity 8.33mw/˚C Total Power Dissipation (PD): P
D=PHOOKSWITCH
+ P
BRIDGE
+ P
DARLINGTON
+ P
LED
PD=(RDS(on)) (I
2
L
) + 2(VF)(IL) + (VCE)(IL) + (V
LED
)(IF) WHERE: R
DS
(on) = Maximum realy on resistance
I
L
= Maximum loop current
V
F
= Maximum diode forward voltage
V
CE
= Maximum voltage collector to emitter
V
LED
= Maximum LED forward voltage
I
F
= Maximum LED current
Electrical Characteristics
Parameter Conditions Symbol Min Typ Max Units
Relay Portion (Pins 15,16)
Output Characteristics @ 25°C
Load Voltage, DC or Peak AC - V
L
- - 350 V
Load Current (Continuous) - I
L
- - 120 mA
On-Resistance I
L
=120mA R
ON
-- 15
Off-State Leakage Current V
L
=350, TJ=25˚C I
LEAK
-- 1µA
Switching Speeds
Turn-On I
F
=5mA, VL=10V T
ON
-- 3ms
Turn-Off I
F
=5mA, VL=10V T
OFF
-- 3ms
Output Capacitance 50V, f=1MHz C
OUT
-25 - pF
Relay Portion (Pins 2,3)
Input Characteristics @ 25°C
Input Control Current I
L
=120mA I
F
5- 50mA
Input Voltage Drop I
F
=5mA V
F
0.9 1.2 1.4 V
Reverse Input Voltage - V
R
-- 5V
Reverse Input Current VR=5V I
R
- - 10 µA
Detector Portion (Pins 7,8)
Output Characteristics @ 25°C
Phototransistor Blocking
Voltage I
C
=10µA BV
CEO
20 50 - V
Phototransistor Dark Current V
CE
=5V, IF=0mA I
CEO
- 50 500 A
Saturation Voltage I
C
=2mA, IF=16mA V
SAT
- 0.3 0.5 V
Current Transfer Ratio IF=6mA, VCE=0.5V CTR 33 400 - %
Detector Portion (Pins 9,10)
Input Characteristics @ 25°C
Input Control Current I
C
=2mA, VCE=0.5V I
F
6 2 100 mA
Input Voltage Drop I
F
=5mA V
F
0.9 1.2 1.4 V
Input Current I
C
=1µA, VCE=5V I
F
525 - µA
(Detector must be off)
ITC135P
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3
Rev. X
Electrical Characteristics
Parameter Conditions Symbol Min Typ Max Units
Bridge Rectifier Electrical
Ratings @ 25°C
Reverse Voltage - V
RD
- - 100 V
Forward Drop Voltage I
FD
=120mA V
FD
- - 1.5 V
Reverse Leakage Current T
J
=25˚C, VR=100V I
RD
- - 10 µA
T
J
=85˚C - - 50 µA
Forward Current (Continuous) I
FD
- - 140 mA
Forward Current (Peak) t=10mS I
FD
- - 0.5 A
Darlington Electrical
Ratings @ 25°C
Collector-Emitter Voltage I
c
=10mA DC, IB=0 V
CEO
40 - - V
Collector-Current Continuous V
C
=3.5V I
C
- - 120 mA
Power Dissipation @ 25˚C - P
d
- - 500 mW
Off-State Collector Emitter
Leakage Current V
CE
=10V; IB=0mA I
CEX
-- 1µA
DC Current Gain I
C
=120mA, h
FE
10,000 - -
V
CE
=10VDC
Saturation Voltage I
C
=120mA V
CE(SAT)
- - 1.5 V
Total Harmonic Distortion fo=300Hz @ -10dBm - - - -80 dB
IC=40mA
Zener Characteristics @ 25°C
Zener Voltage I
ZT
=20mA V
z
- 4.3 - V
(Between pins 4+5 and 6+5)
Zener Voltage I
ZT
=20mA V
z
-15 - V
(Between pins 12+11)
Input to Output Capacitance - C
I/O
-3 -pF
Input to Output Isolation - V
I/O
3750 - - V
RMS
EXAMPLE CIRCUIT
MOSFET
DRIVER
CIRCUIT
4
1
3
2
7
8
6
5
16
15
14
13
12
11
10
9
DIGITAL
GROUND
ISOLATED
GROUND
CPU
RING
OFF-HOOK
680
V
CC
15V
4.7µF +
4.7µF +
51k
15
10µF
25k
COUPLING
TRANSFORMER
R
L
10
300V SURGE
PROTECTION
TELEPHONE
LINE
RING
18Vx 2 0.47µF
250V
8.2k
V
CC
TIP
A
B
A
B
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