Citc BAS40, BAS40-04, BAS40-05, BAS40-06 Schematic [ru]
BAS40 / 04 / 05 / 06
200mA Surface Mount Small Signal Diodes
Features■
Low current rectification and high speed switching.
•
mall surface mount type.
• S
Up to 200mA current capability.
•
Low forward voltage drop (VF = 1.00V typ. @40mA).
•
Silicon epitaxial planar chip, metal silicon junction.
•
Suffi x "G" ind icate s Halog en-fr ee part , ex.BA S40G.
•
Lead-free parts for green partner, exceeds environmental
•
stand ards of M IL-ST D-195 00 /228
■ Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Mo lded plastic, SOT-23
• Terminals : Solder plated, solderable per
MIL-S TD-75 0, Meth od 2026
• Mounting Position : Any
• Weigh t : Approx imate d 0.008 g ram
Outline■
SOT-23
0.0 20 (0 .50 )
0.0 15 (0 .37 )
0.0 40 (1 .02 )
0.0 35 (0 .89 )
0.044 (1 .11)
0.035 (0 .89 )
C
Markin g cod e
A B
.08 1(2 .04 )
.07 0(1 .78 )
0.120 (3 .04 )
0.110 (2. 80)
0.0 29 (0 .69 )
0.0 14 (0 .35 )
0.104 (2 .64 )
0.047 (1 .40 )
0.055 (1 .20 )
0.0 07 (0 .18 )
Dimensions in inches and (millimeters)
C
BAS40
B
A
C
BAS40-06
0.0 83 (2 .10 )
0.0 03 (0 .09 )
B
A
C
BAS40-05
B
A
C
BAS40-04
B
A
■ Maximum ratings and electrical characteristics
O
Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For cap acitive load, derate current by 20%.
Marking code
Peak Repetitive Reverse Voltage
Worki ng Peak R evers e Voltag e
DC Blocking Voltage
Power Dissipation
Forward Continuous Current
Junction Tem perat ure
Stora ge Temper ature
Operating ambient temperature
Repetitive Peak forward surge current
Non-repetitive peak forward current
Thermal resistance from junction to ambient
Forward Voltage V
Diode Capacitance
Reverse Current
C
O
Symbol
V
RRM
V
RWM
V
R
P
D
I
F
T
J
T
STG
T
amb
I
FSM
I
FSM
R
θJA
Characteristic
TA = 25 C
@ t ≤1s;δ≤0.5
P
@ t <10 ms
P
Characteristic Symbol MIN. MAX. UNI T
BAS40 BAS40-06
B1 L2
BAS40-04CBBAS40-05
45
40
150
120
+150
-65 ~ +150
-65 ~ +150
120
200
500
I = 1 mA
F
I = 1 0mA
F
I = 4 0mA
F
V = 0V, f = 1.0MH z
R
V = 30V
R
R
V
F
C
d
I
R
UNIT
mW
K /W
TYP.
0.40
0.56
1.0
5.0
1
10V = 40V
V
mA
O
O
O
mA
mA
pF
uA
C
C
C
Document ID : DS -22K1Q
1
Issue d Date : 20 10/05/05
Revised Date : 2012/05/31
Revision : C
■ Rating and characteristic curves
FIG.1- Forward current as a function
of forward voltage; typical values
2
10
10
1
(1) (2) (3) (4)
BAS40 / 04 / 05 / 06
200mA Surface Mount Small Signal Diodes
FIG.2- Reverse current as a function
of reverse voltage; typical values
1000
O
T = 85 C
A
100
O
T = 85 C
10
A
h
10
FORWARD CURRENT,IF(mA)
10
10
10
FORWARD RESISTANCE rdiff,(Ω)
820 OHM
1
2
0
O
0 C
T
)T = 15
(1
A
FIG.3 - Different ial f orw ard r esistance as a fu nct ion
of forward c urr ent ; typ ical values.
3
2
)
2
(
0.6 0.80.40.2 1.0
FORWARD VOLTAGE: VF(V)
O
C
85
=
A
O
C
25
=
T
)
3
(
A
)
4
(
-
=
T
A
10
1
1
10
1 10 10
FORWARD CURRENT,IF (mA) f=10KHZ
1
O
REVERSE LEAKAGE CURRENT, (uA)
0.1
0.01
0 10 20 30
O
C
40
FIG.4 - Dio de ca pac ita nce as a funct ion o f rev ers e
voltage ;t ypi cal v alu es.
REVERSE VOLTAGE, VR(V)
T = 25 C
A
5
4
3
2
1
JUNCTION CAPACITANCE Cd,(pF)
2
0
0 10 20 4030
f=1 MHZ
)
(V
VR
GE
A
T
OL
V
E
RS
VE
RE
T =
O
5 C
2
A
+10V
50 OHM OU TPU T
PULSE
GENER ATOR
2 K
100uH
0.1 uF
I
Notes :
Notes:
Notes:
F
0.1 uF
t
t
r
t
p
10%
DUT
50 OHM IN PUT
SAMPL ING
OSCIL LOS COP E
1. A2.0 Ko hm va ria ble r esistor adjus ted f or a fo rwa rd Current (IF) o f 10m A.
2. Inpu t pul se is a dju sted so IR(peak ) is eq ual t o 10 mA .
3. tp >> tr r.
V
90%
R
Recovery Time Equivalent Test Circuit
2
t
r
t
IR(REC)=1 mA
OUTPU T PULSE
(IF=I R=1 0mA ;me asu red
at iR(R EC) =1m A)
Document ID : DS -22K1Q
Issue d Date : 20 10/05/05
Revised Date : 2012/05/31
Revision : C
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