Cinterion EES3 Hardware Interface Description

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Hardware Interface Description

EES3 Hardware Interface Description

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EES3 Hardware Interface Description

01.100b 2009-08-12 EES3_HD_v01.100b Confidential / Released

GENERAL NOTE

THE USE OF THE PRODUCT INCLUDING THE SOFTWARE AND DOCUMENTATION (THE "PRODUCT") IS SUBJECT TO THE RELEASE NOTE PROVIDED TOGETHER WITH PRODUCT. IN ANY EVENT THE PROVISIONS OF THE RELEASE NOTE SHALL PREVAIL. THIS DOCUMENT CONTAINS INFORMATION ON CINTERION PRODUCTS. THE SPECIFICATIONS IN THIS DOCUMENT ARE SUBJECT TO CHANGE AT CINTERION'S DISCRETION. CINTERION WIRELESS MODULES GMBH GRANTS A NON-EXCLUSIVE RIGHT TO USE THE PRODUCT. THE RECIPIENT SHALL NOT TRANSFER, COPY, MODIFY, TRANSLATE, REVERSE ENGINEER, CREATE DERIVATIVE WORKS; DISASSEMBLE OR DECOMPILE THE PRODUCT OR OTHERWISE USE THE PRODUCT EXCEPT AS SPECIFICALLY AUTHORIZED. THE PRODUCT AND THIS DOCUMENT ARE PROVIDED ON AN "AS IS" BASIS ONLY AND MAY CONTAIN DEFICIENCIES OR INADEQUACIES. TO THE MAXIMUM EXTENT PERMITTED BY APPLICABLE LAW, CINTERION WIRELESS MODULES GMBH DISCLAIMS ALL WARRANTIES AND LIABILITIES. THE RECIPIENT UNDERTAKES FOR AN UNLIMITED PERIOD OF TIME TO OBSERVE SECRECY REGARDING ANY INFORMATION AND DATA PROVIDED TO HIM IN THE CONTEXT OF THE DELIVERY OF THE PRODUCT. THIS GENERAL NOTE SHALL BE GOVERNED AND CONSTRUED ACCORDING TO GERMAN LAW.

Transmittal, reproduction, dissemination and/or editing of this document as well as utilization of its contents and communication thereof to others without express authorization are prohibited. Offenders will be held liable for payment of damages. All rights created by patent grant or registration of a utility model or design patent are reserved.

Trademark Notice

Microsoft and Windows are either registered trademarks or trademarks of Microsoft Corporation in the United States and/or other countries. All other registered trademarks or trademarks mentioned in this document are property of their respective owners.

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Contents

0 Document History...................................................................................................... 9

1 Introduction...............................................................................................................10

1.1 Related Documents ......................................................................................... 10

1.2 Terms and Abbreviations ................................................................................. 10

1.3 Regulatory and Type Approval Information ..................................................... 14

1.3.1 Directives and Standards.................................................................... 14

1.3.2 SAR requirements specific to portable mobiles .................................. 16

1.3.3 Safety Precautions.............................................................................. 17

2 Product Concept.......................................................................................................18

2.1 Key Features at a Glance ................................................................................ 18

2.2 EES3 System Overview................................................................................... 21

2.3 Circuit Concept ................................................................................................ 22

3 Application Interface.................................................................................................23

3.1 Operating Modes ............................................................................................. 24

3.2 Power Supply................................................................................................... 25

3.2.1 Minimizing Power Losses ................................................................... 25

3.2.2 Measuring the Supply Voltage VBATT+ ............................................. 26

3.2.3 Monitoring Power Supply by AT Command ........................................ 26

3.3 Power Up / Power Down Scenarios................................................................. 27

3.3.1 Turn on EES3 ..................................................................................... 27

3.3.1.1 Turn on EES3 Using Ignition Line IGT ................................ 27

3.3.1.2 Configuring the IGT Line for Use as ON/OFF Switch.......... 30

3.3.1.3 Turn on EES3 Using the VCHARGE Signal........................ 30

3.3.1.4 Reset EES3 via AT+CFUN Command................................ 31

3.3.1.5 Reset or Turn off EES3 in Case of Emergency................... 31

3.3.1.6 Using EMERG_OFF Signal to Reset Application(s) or

External Device(s)............................................................... 31

3.3.2 Signal States after Startup .................................................................. 32

3.3.3 Turn off EES3 ..................................................................................... 34

3.3.3.1 Turn off EES3 Using AT Command..................................... 34

3.3.3.2 Turn on/off EES3 Applications with Integrated USB ........... 36

3.3.4 Automatic Shutdown ........................................................................... 36

3.3.4.1 Thermal Shutdown .............................................................. 37

3.3.4.2 Deferred Shutdown at Extreme Temperature Conditions.... 38

3.3.4.3 Undervoltage Shutdown...................................................... 38

3.3.4.4 Overvoltage Shutdown........................................................ 39

3.4 Automatic GPRS Multislot Class Change ........................................................ 40

3.5 Charging Control.............................................................................................. 41

3.5.1 Hardware Requirements ..................................................................... 41

3.5.2 Software Requirements ...................................................................... 41

3.5.3 Battery Pack Requirements ................................................................ 42

3.5.4 Batteries Tested for Use with EES3.................................................... 43

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118

3.5.5 Charger Requirements........................................................................ 44

3.5.6 Implemented Charging Technique...................................................... 44

3.5.7 Operating Modes during Charging...................................................... 45

3.6 Power Saving................................................................................................... 47

3.6.1 Network Dependency of SLEEP Modes ............................................. 47

3.6.2 Timing of the CTSx Signal in CYCLIC SLEEP Mode 7....................... 48

3.6.3 Timing of the RTSx Signal in CYCLIC SLEEP Mode 9....................... 48

3.7 Summary of State Transitions (Except SLEEP Mode)..................................... 49

3.8 RTC Backup..................................................................................................... 50

3.9 SIM Interface.................................................................................................... 51

3.10 Serial Interface ASC0 ...................................................................................... 52

3.11 Serial Interface ASC1 ...................................................................................... 54

3.12 USB Interface................................................................................................... 55

3.13 I

3.14 SPI Interface .................................................................................................... 57

3.15 Audio Interfaces ............................................................................................... 59

3.16 Control Signals................................................................................................. 69

C Interface ..................................................................................................... 56

3.15.1 Speech Processing ............................................................................. 60

3.15.2 Microphone Circuit .............................................................................. 60

3.15.2.1 Single-ended Microphone Input .......................................... 61

3.15.2.2 Differential Microphone Input .............................................. 62

3.15.2.3 Line Input Configuration with OpAmp ................................. 63

3.15.3 Loudspeaker Circuit ............................................................................ 64

3.15.4 Digital Audio Interface (DAI) ............................................................... 64

3.15.4.1 Master Mode ....................................................................... 66

3.15.4.2 Slave Mode ......................................................................... 67

3.16.1 Synchronization Signal ....................................................................... 69

3.16.2 Using the SYNC Line to Control a Status LED ................................... 70

3.16.3 Behavior of the RING0 Line (ASC0 Interface only)............................. 71

3.16.4 PWR_IND Signal ................................................................................ 71

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4 Antenna Interface......................................................................................................72

4.1 Antenna Installation ......................................................................................... 72

4.2 RF Line Routing Design................................................................................... 73

5 Electrical, Reliability and Radio Characteristics....................................................76

5.1 Absolute Maximum Ratings ............................................................................. 76

5.2 Operating Temperatures.................................................................................. 77

5.3 Storage Conditions .......................................................................................... 78

5.4 Reliability Characteristics................................................................................. 79

5.5 Pad Assignment and Signal Description.......................................................... 80

5.6 Power Supply Ratings...................................................................................... 89

5.7 Electrical Characteristics of the Voiceband Part .............................................. 92

5.7.1 Setting Audio Parameters by AT Commands ..................................... 92

5.7.2 Audio Programming Model ................................................................. 93

5.7.3 Characteristics of Audio Modes .......................................................... 94

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5.7.4 Voiceband Receive Path..................................................................... 95

5.7.5 Voiceband Transmit Path.................................................................... 97

5.8 Air Interface...................................................................................................... 98

5.9 Electrostatic Discharge .................................................................................... 99

6 Mechanics, Mounting and Packaging................................................................... 100

6.1 Mechanical Dimensions of EES3................................................................... 100

6.2 Mounting EES3 onto the Application Platform ............................................... 102

6.2.1 SMT PCB Assembly ......................................................................... 102

6.2.1.1 Land Pattern and Stencil................................................... 102

6.2.1.2 Board Level Characterization............................................ 103

6.2.2 Moisture Sensitivity Level ................................................................. 104

6.2.3 Soldering Conditions and Temperature ............................................ 104

6.2.3.1 Reflow Profile.................................................................... 104

6.2.3.2 Maximum Temperature and Duration ................................ 105

6.2.4 Durability and Mechanical Handling.................................................. 106

6.2.4.1 Storage Life ....................................................................... 106

6.2.4.2 Processing Life.................................................................. 106

6.2.4.3 Baking ............................................................................... 106

6.2.4.4 Electrostatic Discharge...................................................... 106

6.3 Packaging ...................................................................................................... 107

6.3.1 Tape and Reel .................................................................................. 107

6.3.1.1 Orientation......................................................................... 107

6.3.1.2 Barcode Label ................................................................... 108

6.3.2 Shipping Materials ............................................................................ 109

6.3.2.1 Moisture Barrier Bag ......................................................... 109

6.3.2.2 Transportation Box .............................................................111

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7 Sample Application.................................................................................................112

8 Reference Approval................................................................................................114

8.1 Reference Equipment for Type Approval....................................................... 114

8.2 Compliance with FCC and IC Rules and Regulations ................................... 115

9 Appendix..................................................................................................................117

9.1 List of Parts and Accessories......................................................................... 117

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Tab le s

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Tables

Table 1: Directives ....................................................................................................... 14

Table 2: Standards of North American type approval .................................................. 14

Table 3: Standards of European type approval............................................................ 14

Table 4: Requirements of quality ................................................................................. 15

Table 5: Standards of the Ministry of Information Industry of the

People’s Republic of China............................................................................ 15

Table 6: Toxic or hazardous substances or elements with defined concentration limits 16

Table 7: Overview of operating modes ........................................................................ 24

Table 8: Signal states................................................................................................... 32

Table 9: Temperature dependent behavior.................................................................. 37

Table 10: Specifications of battery packs suited for use with EES3 .............................. 43

Table 11: AT commands available in Charge-only mode .............................................. 45

Table 12: Comparison Charge-only and Charge mode ................................................. 46

Table 13: State transitions of EES3 (except SLEEP mode)........................................... 49

Table 14: Signals of the SIM interface (SMT application interface) ............................... 51

Table 15: DCE-DTE wiring of ASC0 .............................................................................. 53

Table 16: DCE-DTE wiring of ASC1 .............................................................................. 54

Table 17: Configuration combinations for the PCM interface......................................... 65

Table 18: Overview of DAI signal functions ................................................................... 65

Table 19: Return loss in the active band........................................................................ 72

Table 20: Absolute maximum ratings............................................................................. 76

Table 21: Board / battery temperature ........................................................................... 77

Table 22: Ambient temperature according to IEC 60068-2 (without forced air circulation) . 77

Table 23: Charging temperature .................................................................................... 77

Table 24: Storage conditions ......................................................................................... 78

Table 25: Summary of reliability test conditions............................................................. 79

Table 26: Pad assignments............................................................................................ 81

Table 27: Signal description........................................................................................... 82

Table 28: Power supply ratings...................................................................................... 89

Table 29: Current consumption during Tx burst for GSM 850MHz and GSM 900MHz . 90 Table 30: Current consumption during Tx burst for GSM 1800MHz and GSM 1900MHz 91

Table 31: Audio parameters adjustable by AT commands ............................................ 92

Table 32: Voiceband characteristics (typical)................................................................. 94

Table 33: Voiceband receive path.................................................................................. 95

Table 34: Voiceband transmit path ................................................................................ 97

Table 35: Air interface.................................................................................................... 98

Table 36: Measured electrostatic values........................................................................ 99

Table 37: Reflow temperature ratings.......................................................................... 105

Table 38: List of parts and accessories........................................................................ 117

Table 39: Molex sales contacts (subject to change) .................................................... 118

Table 40: Hirose sales contacts (subject to change) ................................................... 118

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Figures

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Figures

Figure 1: EES3 system overview .................................................................................. 21

Figure 2: EES3 block diagram....................................................................................... 22

Figure 3: Power supply limits during transmit burst....................................................... 25

Figure 4: Position of reference points BATT+and GND ................................................ 26

Figure 5: Powerup with operating voltage at BATT+ applied before activating IGT...... 28

Figure 6: Powerup with IGT held low before switching on operating voltage at BATT+ 29

Figure 7: Timing of IGT if used as ON/OFF switch ....................................................... 30

Figure 8: Signal states during turn-off procedure.......................................................... 35

Figure 9: Battery pack circuit diagram........................................................................... 42

Figure 10: Power saving and paging............................................................................... 47

Figure 11: Timing of CTSx signal (if CFUN= 7)............................................................... 48

Figure 12: Timing of RTSx signal (if CFUN = 9).............................................................. 48

Figure 13: RTC supply from capacitor............................................................................. 50

Figure 14: RTC supply from rechargeable battery .......................................................... 50

Figure 15: RTC supply from non-chargeable battery ...................................................... 50

Figure 16: Serial interface ASC0..................................................................................... 52

Figure 17: Serial interface ASC1..................................................................................... 54

Figure 18: USB circuit ..................................................................................................... 55

Figure 19: I Figure 20: I

Figure 21: SPI interface................................................................................................... 57

Figure 22: Characteristics of SPI modes......................................................................... 58

Figure 23: Audio block diagram....................................................................................... 59

Figure 24: Single ended microphone input...................................................................... 61

Figure 25: Differential microphone input ......................................................................... 62

Figure 26: Line input configuration with OpAmp ............................................................. 63

Figure 27: Differential loudspeaker configuration............................................................ 64

Figure 28: Master PCM interface Application.................................................................. 66

Figure 29: Short Frame PCM timing................................................................................ 66

Figure 30: Long Frame PCM timing ................................................................................ 67

Figure 31: Slave PCM interface application .................................................................... 68

Figure 32: Slave PCM Timing, Short Frame selected..................................................... 68

Figure 33: Slave PCM Timing, Long Frame selected...................................................... 68

Figure 34: SYNC signal during transmit burst................................................................. 69

Figure 35: LED Circuit (Example).................................................................................... 70

Figure 36: Incoming voice/fax/data call........................................................................... 71

Figure 37: URC transmission .......................................................................................... 71

Figure 38: Antenna pads................................................................................................. 72

Figure 39: 4 layer PCB stack for EES3 interface board .................................................. 73

Figure 40: RF line on interface board. All dimensions are given in mm.......................... 75

Figure 41: Numbering plan for connecting pads (bottom view)....................................... 80

Figure 42: Audio programming model............................................................................. 93

Figure 43: EES3– top view............................................................................................ 100

Figure 44: Dimensions of EES3 (all dimensions in mm) ............................................... 101

Figure 45: Land pattern (bottom view) .......................................................................... 102

Figure 46: Recommended stencil design (bottom view) ............................................... 103

Figure 47: Reflow Profile............................................................................................... 104

Figure 48: Carrier tape .................................................................................................. 107

Figure 49: Reel direction ............................................................................................... 107

Figure 50: Barcode label on tape reel ........................................................................... 108

C interface connected to VCC of application............................................... 56

C interface connected to VEXT line of EES3............................................... 56

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Figures

Figure 51: Moisture barrier bag (MBB) with imprint....................................................... 109

Figure 52: Moisture Sensitivity Label ............................................................................ 110

Figure 53: Humidity Indicator Card - HIC ...................................................................... 111

Figure 54: EES3 sample application ............................................................................. 113

Figure 55: Reference equipment for Type Approval ..................................................... 114

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0 Document History

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0 Document History

Preceding document: "EES3 Hardware Interface Description" Version 01.100a

New document: "EES3 Hardware Interface Description" Version 01.100b

Chapter What is new

3.3.1.1 Removed URC "Shutdown after Illegal Powerup".

3.3.2 Table 8: Changed values of PU = Pull up: typ. -200µA and max. -350µA

3.10 Added remark on bit rate tolerance for autobauding.

5.2 Table 22: Removed line on automatic shutdown.

Preceding document: "EES3 Hardware Interface Description" Version 01.100

New document: "EES3 Hardware Interface Description" Version 01.100a

Chapter What is new

3.3, 3.3.1.6,

5.5

4 Slightly revised chapter.

5.2 Added remark on deferred shutdown during emergency calls.

5.5 Corrected VCHARGE properties: V

Preceding document: "EES3 Hardware Interface Description" Version 01.000

New document: "EES3 Hardware Interface Description" Version 01.100

Chapter What is new

3.3.2 Corrected defined state for DSR0 to O,L (see Table 8).

5.3 Corrected storage conditions (see Table 24).

New document: "EES3 Hardware Interface Description" Version 01.000

Chapter What is new

-- Initial document setup.

Revised timing for EMERG_OFF signal throughout document.

max = 7.0V

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EES3 Hardware Interface Description

1 Introduction

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1 Introduction

This document1 describes the hardware of the Cinterion EES3 module that connects to the cellular device application and the air interface. It helps you quickly retrieve interface specifications, electrical and mechanical details and information on the requirements to be considered for integrating further components.

1.1 Related Documents

[1] EES3 AT Command Set [2] EES3 Release Note [3] DSB75 Support Box - Evaluation Kit for Cinterion Wireless Modules [4] Application Note 02: Audio Interface Design for GSM Applications [5] Application Note 07: Rechargeable Lithium Batteries in GSM Applications [6] Application Note 16: Updating Firmware [7] Application Note 22: Using TTY / CTM Equipment [8] Application Note 24: Application Developer’s Guide [9] Application Note 26: Power Supply Design for Wireless Applications [10] Application Note 32: Integrating USB into GSM Applications [11] Application Note 48: SMT Module Integration [12] Multiplexer User's Guide [13] Multiplex Driver Developer’s Guide [14] Multiplexer Driver Installation Guide [15] Remote SAT User’s Guide

1.2 Terms and Abbreviations

Abbreviation Description

ADC Analog-to-Digital Converter

AGC Automatic Gain Control

ANSI American National Standards Institute

ARFCN Absolute Radio Frequency Channel Number

ARP Antenna Reference Point

ASC0 / ASC1 Asynchronous Controller. Abbreviations used for first and second serial interface of

EES3

B Thermistor Constant

BER Bit Error Rate

BTS Base Transceiver Station

CB or CBM Cell Broadcast Message

CE Conformité Européene (European Conformity)

CHAP Challenge Handshake Authentication Protocol

1. The document is effective only if listed in the appropriate Release Notes as part of the technical documentation delivered with your Cinterion product.

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1.2 Terms and Abbreviations

Abbreviation Description

CPU Central Processing Unit

CS Coding Scheme

CSD Circuit Switched Data

CTS Clear to Send

DAC Digital-to-Analog Converter

DAI Digital Audio Interface

dBm0 Digital level, 3.14dBm0 corresponds to full scale, see ITU G.711, A-law

DCE Data Communication Equipment (typically modems, e.g. Cinterion GSM module)

DCS 1800 Digital Cellular System, also referred to as PCN

DRX Discontinuous Reception

DSB Development Support Box

DSP Digital Signal Processor

DSR Data Set Ready

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DTE Data Terminal Equipment (typically computer, terminal, printer or, for example, GSM

application)

DTR Data Terminal Ready

DTX Discontinuous Transmission

EFR Enhanced Full Rate

EGSM Enhanced GSM

EIRP Equivalent Isotropic Radiated Power

EMC Electromagnetic Compatibility

ERP Effective Radiated Power

ESD Electrostatic Discharge

ETS European Telecommunication Standard

FCC Federal Communications Commission (U.S.)

FDMA Frequency Division Multiple Access

FR Full Rate

GMSK Gaussian Minimum Shift Keying

GPIO General Purpose Input/Output

GPRS General Packet Radio Service

GSM Global Standard for Mobile Communications

HiZ High Impedance

HR Half Rate

I/O Input/Output

IC Integrated Circuit

IMEI International Mobile Equipment Identity

ISO International Standards Organization

ITU International Telecommunications Union

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1.2 Terms and Abbreviations

Abbreviation Description

kbps kbits per second

LED Light Emitting Diode

Li-Ion / Li+ Lithium-Ion

Li battery Rechargeable Lithium Ion or Lithium Polymer battery

Mbps Mbits per second

MMI Man Machine Interface

MO Mobile Originated

MS Mobile Station (GSM module), also referred to as TE

MSISDN Mobile Station International ISDN number

MT Mobile Terminated

NTC Negative Temperature Coefficient

OEM Original Equipment Manufacturer

PA Power Amplifier

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PAP Password Authentication Protocol

PBCCH Packet Switched Broadcast Control Channel

PCB Printed Circuit Board

PCL Power Control Level

PCM Pulse Code Modulation

PCN Personal Communications Network, also referred to as DCS 1800

PCS Personal Communication System, also referred to as GSM 1900

PDU Protocol Data Unit

PLL Phase Locked Loop

PPP Point-to-point protocol

PSK Phase Shift Keying

PSU Power Supply Unit

PWM Pulse Width Modulation

R&TTE Radio and Telecommunication Terminal Equipment

RAM Random Access Memory

RF Radio Frequency

RMS Root Mean Square (value)

RoHS Restriction of the use of certain hazardous substances in electrical and electronic

equipment.

ROM Read-only Memory

RTC Real Time Clock

RTS Request to Send

Rx Receive Direction

SAR Specific Absorption Rate

SELV Safety Extra Low Voltage

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1.2 Terms and Abbreviations

Abbreviation Description

SIM Subscriber Identification Module

SMD Surface Mount Device

SMS Short Message Service

SMT Surface Mount Technology

SPI Serial Peripheral Interface

SRAM Static Random Access Memory

TA Terminal adapter (e.g. GSM module)

TDMA Time Division Multiple Access

TE Terminal Equipment, also referred to as DTE

Tx Transmit Direction

UART Universal asynchronous receiver-transmitter

URC Unsolicited Result Code

USB Universal Serial Bus

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USSD Unstructured Supplementary Service Data

VSWR Voltage Standing Wave Ratio

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1.3 Regulatory and Type Approval Information

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1.3 Regulatory and Type Approval Information

1.3.1 Directives and Standards

EES3 is designed to comply with the directives and standards listed below.

It is the responsibility of the application manufacturer to ensure compliance of the final product with all provisions of the applicable directives and standards as well as with the technical specifications provided in the "EES3 Hardware Interface Description".

Table 1: Directives

99/05/EC Directive of the European Parliament and of the council of 9 March 1999

on radio equipment and telecommunications terminal equipment and the mutual recognition of their conformity (in short referred to as R&TTE Directive 1999/5/EC). The product is labeled with the CE conformity mark

2002/95/EC Directive of the European Parliament and of the Council

of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (RoHS)

Table 2: Standards of North American type approval

CFR Title 47 Code of Federal Regulations, Part 22 and Part 24 (Telecommunications,

PCS); US Equipment Authorization FCC

UL 60 950 Product Safety Certification (Safety requirements)

NAPRD.03 V3.13 Overview of PCS Type certification review board Mobile Equipment Type

Certification and IMEI control PCS Type Certification Review board (PTCRB)

RSS133 (Issue2) Canadian Standard

Table 3: Standards of European type approval

3GPP TS 51.010-1 Digital cellular telecommunications system (Phase 2); Mobile Station (MS)

conformance specification

ETSI EN 301 511 V9.0.2 Candidate Harmonized European Standard (Telecommunications series)

Global System for Mobile communications (GSM); Harmonized standard for mobile stations in the GSM 900 and DCS 1800 bands covering essential requirements under article 3.2 of the R&TTE directive (1999/5/EC) (GSM 13.11 version 7.0.1 Release 1998)

GCF-CC V3.28 Global Certification Forum - Certification Criteria

ETSI EN 301 489-1 V1.4.1

1. Manufacturers of applications which can be used in the US shall ensure that their applications have a PTCRB approval. For this purpose they can refer to the PTCRB approval of the respective module.

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1.3 Regulatory and Type Approval Information

Table 3: Standards of European type approval

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ETSI EN 301 489-7 V1.2.1 (2000-09)

IEC/EN 60950-1 (2001) Safety of information technology equipment (2000)

Table 4: Requirements of quality

IEC 60068 Environmental testing

DIN EN 60529 IP codes

Table 5: Standards of the Ministry of Information Industry of the People’s Republic of China

SJ/T 11363-2006 “Requirements for Concentration Limits for Certain Hazardous Sub-

SJ/T 11364-2006 “Marking for Control of Pollution Caused by Electronic

Candidate Harmonized European Standard (Telecommunications series) Electro Magnetic Compatibility and Radio spectrum Matters (ERM); Electro Magnetic Compatibility (EMC) standard for radio equipment and services; Part 7: Specific conditions for mobile and portable radio and ancillary equipment of digital cellular radio telecommunications systems (GSM and DCS)

stances in Electronic Information Products” (2006-06).

Information Products” (2006-06).

According to the “Chinese Administration on the Control of Pollution caused by Electronic Information Products” (ACPEIP) the EPUP, i.e., Environmental Protection Use Period, of this product is 20 years as per the symbol shown here, unless otherwise marked. The EPUP is valid only as long as the product is operated within the operating limits described in the Cinterion Wireless Modules Hardware Interface Description.

Please see Table 6 for an overview of toxic or hazardous substances or elements that might be contained in product parts in concentrations above the limits defined by SJ/T 11363-2006.

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1.3 Regulatory and Type Approval Information

Table 6: Toxic or hazardous substances or elements with defined concentration limits

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1.3.2 SAR requirements specific to portable mobiles

Mobile phones, PDAs or other portable transmitters and receivers incorporating a GSM module must be in accordance with the guidelines for human exposure to radio frequency energy. This requires the Specific Absorption Rate (SAR) of portable EES3 based applications to be evaluated and approved for compliance with national and/or international regulations.

Since the SAR value varies significantly with the individual product design manufacturers are advised to submit their product for approval if designed for portable use. For European and US markets the relevant directives are mentioned below. It is the responsibility of the manufacturer of the final product to verify whether or not further standards, recommendations or directives are in force outside these areas.

Products intended for sale on US markets

ES 59005/ANSI C95.1 Considerations for evaluation of human exposure to Electromagnetic

Fields (EMFs) from Mobile Telecommunication Equipment (MTE) in the frequency range 30MHz - 6GHz

Products intended for sale on European markets

EN 50360 Product standard to demonstrate the compliance of mobile phones with

the basic restrictions related to human exposure to electromagnetic fields (300MHz - 3GHz)

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1.3 Regulatory and Type Approval Information

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1.3.3 Safety Precautions

The following safety precautions must be observed during all phases of the operation, usage, service or repair of any cellular terminal or mobile incorporating EES3. Manufacturers of the cellular terminal are advised to convey the following safety information to users and operating personnel and to incorporate these guidelines into all manuals supplied with the product. Failure to comply with these precautions violates safety standards of design, manufacture and intended use of the product. Cinterion Wireless Modules assumes no liability for customer’s failure to comply with these precautions.

When in a hospital or other health care facility, observe the restrictions on the use of mobiles. Switch the cellular terminal or mobile off, if instructed to do so by the guidelines posted in sensitive areas. Medical equipment may be sensitive to RF energy. The operation of cardiac pacemakers, other implanted medical equipment and hearing aids can be affected by interference from cellular terminals or mobiles placed close to the device. If in doubt about potential danger, contact the physician or the manufacturer of the device to verify that the equipment is properly shielded. Pacemaker patients are advised to keep their hand-held mobile away from the pacemaker, while it is on.

Switch off the cellular terminal or mobile before boarding an aircraft. Make sure it cannot be switched on inadvertently. The operation of wireless appliances in an aircraft is forbidden to prevent interference with communications systems. Failure to observe these instructions may lead to the suspension or denial of cellular services to the offender, legal action, or both.

Do not operate the cellular terminal or mobile in the presence of flammable gases or fumes. Switch off the cellular terminal when you are near petrol stations, fuel depots, chemical plants or where blasting operations are in progress. Operation of any electrical equipment in potentially explosive atmospheres can constitute a safety hazard.

Your cellular terminal or mobile receives and transmits radio frequency energy while switched on. Remember that interference can occur if it is used close to TV sets, radios, computers or inadequately shielded equipment. Follow any special regulations and always switch off the cellular terminal or mobile wherever forbidden, or when you suspect that it may cause interference or danger.

Road safety comes first! Do not use a hand-held cellular terminal or mobile when driving a vehicle, unless it is securely mounted in a holder for speakerphone operation. Before making a call with a hand-held terminal or mobile, park the vehicle. Speakerphones must be installed by qualified personnel. Faulty installation or operation can constitute a safety hazard.

IMPORTANT! Cellular terminals or mobiles operate using radio signals and cellular networks. Because of this, connection cannot be guaranteed at all times under all conditions. Therefore, you should never rely solely upon any wireless device for essential communications, for example emergency calls. Remember, in order to make or receive calls, the cellular terminal or mobile must be switched on and in a service area with adequate cellular signal strength. Some networks do not allow for emergency calls if certain network services or phone features are in use (e.g. lock functions, fixed dialing etc.). You may need to deactivate those features before you can make an emergency call. Some networks require that a valid SIM card be properly inserted in the cellular terminal or mobile.

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EES3 Hardware Interface Description

2 Product Concept

2.1 Key Features at a Glance

Feature Implementation

General

Frequency bands Quad band: GSM 850/900/1800/1900MHz

GSM class Small MS



Output power (according to Release 99)

Power supply 3.2V to 4.5V

Ambient operating temperature according to IEC 60068-2

Physical Dimensions: 29.6mm x 33.9mm x 3.2mm

RoHS All hardware components fully compliant with EU RoHS Directive

GSM / GPRS / EGPRS features

Data transfer GPRS:

Class 4 (+33dBm ±2dB) for EGSM850 Class 4 (+33dBm ±2dB) for EGSM900 Class 1 (+30dBm ±2dB) for GSM1800 Class 1 (+30dBm ±2dB) for GSM1900 Class E2 (+27dBm ± 3dB) for GSM 850 8-PSK Class E2 (+27dBm ± 3dB) for GSM 900 8-PSK Class E2 (+26dBm +3 /-4dB) for GSM 1800 8-PSK Class E2 (+26dBm +3 /-4dB) for GSM 1900 8-PSK

The values stated above are maximum limits. According to Release 99, the maximum output power in a multislot configuration may be lower. The nominal reduction of maximum output power varies with the number of uplink timeslots used and amounts to 3.0dB for 2Tx, 4.8dB for 3Tx and 6.0dB for 4Tx.

Normal operation: -30°C to +75°C Restricted operation: +75°C to +85°C, -30°C to -40°C

Weight: approx. 5.5g

• Multislot Class 12

• Full PBCCH support

• Mobile Station Class B

• Coding Scheme 1 – 4 EGPRS:

• Multislot Class 12

• Mobile Station Class B

• Modulation and Coding Scheme MCS 1-9 CSD:

• V.110, RLP, non-transparent

• 2.4, 4.8, 9.6, 14.4kbps

•USSD PPP-stack for GPRS data transfer

SMS Point-to-point MT and MO

Cell broadcast Text and PDU mode Storage: SIM card plus 25 SMS locations in mobile equipment Transmission of SMS alternatively over CSD or GPRS. Preferred mode can be user defined.

Fax Group 3; Class 1

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EES3 Hardware Interface Description

2.1 Key Features at a Glance

Feature Implementation

Audio Speech codecs:

• Half rate HR (ETS 06.20)

• Full rate FR (ETS 06.10)

• Enhanced full rate EFR (ETS 06.50/06.60/06.80)

• Adaptive Multi Rate AMR Speakerphone operation, echo cancellation, noise suppression, DTMF,

7 ringing tones

Software

AT commands Hayes 3GPP TS 27.007, TS 27.005, Cinterion

AT commands for RIL compatibility

Microsoft

SIM Application Toolkit SAT Release 99

TCP/IP stack Access by AT commands

Remote SIM Access EES3 supports Remote SIM Access. RSA enables EES3 to use a remote

compatibility RIL for Pocket PC and Smartphone

SIM card via its serial interface and an external application, in addition to the SIM card locally attached to the dedicated lines of the application interface. The connection between the external application and the remote SIM card can be a Bluetooth wireless link or a serial link.



The necessary protocols and procedures are implemented according to the “SIM Access Profile Interoperability Specification of the Bluetooth Special Interest Group” (SAP).

Firmware update Generic update from host application over ASC0, ASC1 or USB.

Interfaces

Module interface Surface mount device with solderable connection pads (SMT application

interface).

Land grid array (LGA) technology ensures high solder joint reliability and provides the possibility to use an optional module mounting socket.

For more information on how to integrate SMT modules see also [11]. This application note comprises chapters on module mounting and application layout issues as well as on additional SMT application development equipment.

2 serial interfaces ASC0:

• 8-wire modem interface with status and control lines, unbalanced, asynchronous

• Adjustable baud rates: 300bps to 921,600bps

• Autobauding: 1,200bps to

• Supports RTS0/CTS0 hardware handshake and software XON/XOFF flow control.

• Multiplex ability according to GSM 07.10 Multiplexer Protocol.

ASC1:

• 4-wire, unbalanced asynchronous interface

• Adjustable baud rates: 300bps to 921,600bps

• Supports RTS1/CTS1 hardware handshake and software XON/XOFF flow control

460,800bps

USB Supports a USB 2.0 Full Speed (12Mbit/s) slave interface.

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EES3 Hardware Interface Description

2.1 Key Features at a Glance

Feature Implementation

I2CI

SPI Serial Peripheral Interface for transmission rates up to 6.5 Mbps.

Audio 2 analog interfaces

SIM interface Supported SIM cards: 3V, 1.8V

Antenna 50.

Power on/off, Reset

Power on/off Switch-on by hardware signal IGT

Reset Orderly shutdown and reset by AT command

C bus for 7-bit addressing and transmission rates up to 400kbps. Programmable with AT^SSPI command. Alternatively, all lines of the I²C interface are configurable as SPI.

Programmable with AT^SSPI command. If the SPI is active the I²C interface is not available.

1 digital interface (PCM)

Switch-off by AT command (AT^SMSO) Automatic switch-off in case of critical temperature and voltage conditions.

Emergency reset by hardware signals EMERG_OFF and IGT.



Special features

Charging Supports management of rechargeable Lithium Ion and Lithium Polymer

batteries

Real time clock Timer functions via AT commands

Phonebook SIM and phone

TTY/CTM support Integrated CTM modem

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EES3 Hardware Interface Description

2.2 EES3 System Overview



Figure 1: EES3 system overview

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EES3 Hardware Interface Description

BATT+

GND

IGT

EMERG_OFF

ASC(0)

SIM Interface

D(0:15)

A(0:24)

RD; WR; CS; WAIT

Interface

RF - Baseband

NTC

BATT_TEMP

SYNC

Transceiver

Power Amplifier

PSRAM

Nor-Flash

Audio analog

USB

I2C/SPI

SPI

VEXT

ISENSE

VSENSE

VCHARGE

CHARGEGATE

TEMP1

REFCHG

ASC(1)

26MHz

Front End

DAI

PWR_IND

Measuring

Network

32.768 kHz

26MHz

Application Interface

Digital and Analog

Baseband Processor

Conversion

Switch

TEMP2

BATTEMP

AUXADC1

Several

Power supply

voltages

VDDLP

2.3 Circuit Concept



2.3 Circuit Concept

Figure 2 shows a block diagram of the EES3 module and illustrates the major functional com-

ponents:

Baseband block:

• Digital baseband processor with DSP

• Analog processor with power supply unit (PSU)

• Flash / PSRAM (stacked)

• Application interface (SMT with connecting pads)

RF section:

• RF transceiver

• RF power amplifier

• RF front

• Antenna pad

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Figure 2: EES3 block diagram

EES3 Hardware Interface Description

3 Application Interface



3 Application Interface

EES3 is equipped with an SMT application interface that connects to the external application. The host interface incorporates several sub-interfaces described in the following sections:

• Power supply - see Section 3.2

• Charger interface – see Section 3.5

• SIM interface - see Section 3.9

• Serial interface ASC0 - see Section 3.10

• Serial interface ASC1 - see Section 3.11

• Serial interface USB - see Section 3.12

• Serial interface I²C - see Section 3.13

• Two analog audio interfaces - see Section 3.15

• Digital audio interface (DAI) - see Section 3.15 and 3.5.5

• Status and control lines: IGT, EMERG_OFF, PWR_IND, SYNC - see Table 27.

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3.1 Operating Modes



3.1 Operating Modes

The table below briefly summarizes the various operating modes referred to in the following chapters.

Table 7: Overview of operating modes

Normal operation GSM / GPRS SLEEP Various power save modes set with AT+CFUN command.

Software is active to minimum extent. If the module was registered to the GSM network in IDLE mode, it is registered and paging with the BTS in SLEEP mode, too. Power saving can be chosen at different levels: The NON-CYCLIC SLEEP mode (AT+CFUN=0) disables the AT interface. The CYCLIC SLEEP modes AT+CFUN=7 and 9 alternatingly activate and deactivate the AT interfaces to allow permanent access to all AT commands.

GSM IDLE Software is active. Once registered to the GSM network,

paging with BTS is carried out. The module is ready to send and receive.

GSM TALK Connection between two subscribers is in progress. Power

consumption depends on network coverage individual settings, such as DTX off/on, FR/EFR/HR, hopping sequences, antenna.

GPRS IDLE EGPRS IDLE

GPRS DATA EGPRS DATA

POWER DOWN Normal shutdown after sending the AT^SMSO command.

Only a voltage regulator is active for powering the RTC. Software is not active. Interfaces are not accessible. Operating voltage (connected to BATT+) remains applied.

Airplane mode Airplane mode shuts down the radio part of the module, causes the module to log

off from the GSM/GPRS network and disables all AT commands whose execution requires a radio connection. Airplane mode can be controlled by using the AT commands AT^SCFG and AT+CALA:

• With AT^SCFG=MEopMode/Airplane/OnStart the module can be configured to enter the Airplane mode each time when switched on or reset.

• The parameter AT^SCFG=MEopMode/Airplane can be used to switch back and forth between Normal mode and Airplane mode any time during operation.

• Setting an alarm time with AT+CALA followed by AT^SMSO wakes the module up into Airplane mode at the scheduled time.

Charge-only mode

Limited operation for battery powered applications. Enables charging while module is detached from GSM network. Limited number of AT commands is accessible. Charge-only mode applies when the charger is connected if the module was powered down with AT^SMSO.

Module is ready for GPRS data transfer, but no data is currently sent or received. Power consumption depends on network settings and GPRS configuration (e.g. multislot settings).

GPRS data transfer in progress. Power consumption depends on network settings (e.g. power control level), uplink / downlink data rates, GPRS configuration (e.g. used multislot settings) and reduction of maximum output power.

Charge mode during normal operation

Normal operation (SLEEP, IDLE, TALK, GPRS/EGPRS IDLE, GPRS/EGPRS DATA) and charging running in parallel. Charge mode changes to Charge-only mode when the module is powered down before charging has been completed.

See Table 13 for the various options proceeding from one mode to another.

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EES3 Hardware Interface Description

3.2 Power Supply



3.2 Power Supply

EES3 needs to be connected to a power supply at the SMT application interface (3 lines each BATT+ and GND).

The power supply of EES3 has to be a single voltage source at BATT+. It must be able to provide the peak current during the uplink transmission.

All the key functions for supplying power to the device are handled by the power management section of the analog controller. This IC provides the following features:

• Stabilizes the supply voltages for the GSM baseband using low drop linear voltage regula-

tors and a DC-DC step down switching regulator.

• Switches the module's power voltages for the power-up and -down procedures.

• Delivers, across the VEXT line, a regulated voltage for an external application. This voltage is not available in Power-down mode.

• SIM switch to provide SIM power supply.

3.2.1 Minimizing Power Losses

When designing the power supply for your application please pay specific attention to power losses. Ensure that the input voltage V even in a transmit burst where current consumption can rise to typical peaks of 2A. It should be noted that EES3 switches off when exceeding these limits. Any voltage drops that may occur in a transmit burst should not exceed 400mV.

The measurement network monitors outburst and inburst values. The drop is the difference of both values. The maximum drop (Dmax) since the last start of the module will be saved. In IDLE and SLEEP mode, the module switches off if the minimum battery voltage (V

Example:

VImin = 3.2V Dmax = 0.4V

min = VImin + Dmax

batt

min = 3.2V + 0.4V = 3.6V

batt

never drops below 3.2V on the EES3 board, not

BATT+

min) is reached.

batt

Figure 3: Power supply limits during transmit burst

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EES3 Hardware Interface Description

Reference point GND: Module shielding

Reference point BATT+: External test pad connected to and positioned closely to BATT+ pad 68 or 74.

External application

3.2 Power Supply



3.2.2 Measuring the Supply Voltage V

To measure the supply voltage V BATT+. GND should be the module’s baseband shielding, while BATT+ should be a test pad on the external application the module is mounted on. The external BATT+ reference point has to be connected to and positioned close to the SMT application interface’s BATT+ pads 68 or 74 as shown in Figure 4.

it is possible to define two reference points GND and

BATT+

3.2.3 Monitoring Power Supply by AT Command

To monitor the supply voltage you can also use the AT^SBV command which returns the value related to the reference points BATT+ and GND.

The module continuously measures the voltage at intervals depending on the operating mode of the RF interface. The duration of measuring ranges from 0.5s in TALK/DATA mode to 50s when EES3 is in IDLE mode or Limited Service (deregistered). The displayed voltage (in mV) is averaged over the last measuring period before the AT^SBV command was executed.

Figure 4: Position of reference points BATT+and GND

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3.3 Power Up / Power Down Scenarios



3.3 Power Up / Power Down Scenarios

In general, be sure not to turn on EES3 while it is beyond the safety limits of voltage and temperature stated in Chapter 5. EES3 would immediately switch off after having started and detected these inappropriate conditions. In extreme cases this can cause permanent damage to the module.

3.3.1 Turn on EES3

EES3 can be started in a variety of ways as described in the following chapters:

• Hardware driven start-up by IGT line: starts Normal mode or Airplane mode (see 3.3.1.1)

• Software controlled reset by AT+CFUN command: starts Normal mode or Airplane mode (see 3.3.1.4)

• Hardware driven start-up by VCHARGE line: starts charging algorithm and charge-only mode (see 3.3.1.3)

• Wake-up from Power-down mode by using RTC interrupt: starts Airplane mode

The option whether to start into Normal mode or Airplane mode depends on the settings made with the AT^SCFG command or AT+CALA. With AT+CALA, followed by AT^SMSO the module can be configured to restart into Airplane mode at a scheduled alarm time. Switching back and forth between Normal mode and Airplane mode is possible any time during operation by using the AT^SCFG command.

After startup or mode change the following URCs indicate the module’s ready state:

• “SYSSTART” indicates that the module has entered Normal mode.

• ^SYSSTART AIRPLANE MODE” indicates that the module has entered Airplane mode.

• ^SYSSTART CHARGE ONLY MODE” indicates that the module has entered the Chargeonly mode.

These URCs are indicated only if the module is set to a fixed bit rate, i.e. they do not appear if autobauding is enabled (AT+IPR LA, Airplane mode and AT+IPR can be found in [1].

0). Detailed explanations on AT^SCFG, AT+CFUN, AT+CA-

3.3.1.1 Turn on EES3 Using Ignition Line IGT

When the EES3 module is in Power-down mode or Charge-only mode, it can be started to Normal mode or Airplane mode by driving the IGT (ignition) line to ground. This must be accomplished with an open drain/collector driver to avoid current flowing into this line.

The module will start up when both of the following two conditions are met:

• The supply voltage applied at BATT+ must be in the operating range.

• The IGT line needs to be driven low for at least 400ms in Power-down mode or at least 2s in Charge-only mode.

Considering different strategies of host application design the figures below show two approaches to meet this requirement: The example in Figure 5 assumes that IGT is activated after BATT+ has already been applied. The example in Figure 6 assumes that IGT is held low before BATT+ is switched on. In either case, to power on the module, ensure that low state of IGT takes at least 400ms (Power-down mode) or 2s (Charge-only mode) from the moment the voltage at BATT+ is available. For Charge-only mode see also Section 3.5.7.

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For details on how to use EMERG_OFF to reset applications or external devices see Section 3.3.1.6.

3.3 Power Up / Power Down Scenarios

Assertion of CTS indicates that the module is ready to receive data from the host application. In addition, if configured to a fixed bit rate (AT+IPR “^SYSSTART” or “^SYSSTART AIRPLANE MODE” which notifies the host application that the first AT command can be sent to the module. The duration until this URC is output varies with the SIM card and may take a couple of seconds.

Please note that no “^SYSSTART” or “^SYSSTART AIRPLANE MODE” URC will be generated if autobauding (AT+IPR=0) is enabled.

To allow the application to detect the ready state of the module we recommend using hardware flow control which can be set with AT\Q or AT+IFC (see [1] for details). The default setting of EES3 is AT\Q0 (no flow control) which shall be altered to AT\Q3 (RTS/CTS handshake). If the application design does not integrate RTS/CTS lines the host application shall wait at least for the “^SYSSTART” or “^SYSSTART AIRPLANE MODE” URC. However, if the URCs are neither used (due to autobauding) then the only way of checking the module’s ready state is polling. To do so, try to send characters (e.g. “at”) until the module is responding.

See also Section 3.3.2 "Signal States after Startup”.

0), the module will send the URC



Figure 5: Powerup with operating voltage at BATT+ applied before activating IGT

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EES3 Hardware Interface Description

For details on how to use EMERG_OFF to reset applications or external devices see Section 3.3.1.6.

3.3 Power Up / Power Down Scenarios



Figure 6: Powerup with IGT held low before switching on operating voltage at BATT+

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EES3 Hardware Interface Description

3.3 Power Up / Power Down Scenarios



3.3.1.2 Configuring the IGT Line for Use as ON/OFF Switch

The IGT line can be configured for use in two different switching modes: You can set the IGT line to switch on the module only, or to switch it on and off. The switching mode is determined by the parameter "MEShutdown/OnIgnition" of the AT^SCFG command. This approach is useful for application manufacturers who wish to have an ON/OFF switch installed on the host device.

By factory default, the ON/OFF switch mode of IGT is disabled:

at^scfg=meshutdown/onignition ^SCFG: "MEShutdown/OnIgnition","off"

To configure IGT for use as ON/OFF switch:

at^scfg=meshutdown/onignition,on ^SCFG: "MEShutdown/OnIgnition","on"

We strongly recommend taking great care before changing the switching mode of the IGT line. To ensure that the IGT line works properly as ON/OFF switch it is of vital importance that the following conditions are met.

Switch-on condition:If the EES3 is off, the IGT line must be asserted for at least 400ms before

being released. The module switches on after 400ms.

Switch-off condition: If the EES3 is on, the IGT line must be asserted for at least 1s before being

released. The module switches off after the line is released. The switchoff routine is identical with the procedure initiated by AT^SMSO, i.e. the software performs an orderly shutdown as described in Section 3.3.3.1. Before switching off the module wait at least 2 seconds after startup.

# Query the current status of IGT. # IGT can be used only to switch on EES3. IGT works as described in Section 3.3.1.1.

# Enable the ON/OFF switch mode of IGT. # IGT can be used to switch on and off EES3.

Figure 7: Timing of IGT if used as ON/OFF switch

3.3.1.3 Turn on EES3 Using the VCHARGE Signal

As detailed in Section 3.5.7, the charging adapter can be connected regardless of the module’s operating mode.

If the charger is connected to the charger input of the external charging circuit and the module’s VCHARGE line while EES3 is off, and the battery voltage is above the undervoltage lockout threshold, processor controlled fast charging starts (see Section 3.5.6). EES3 enters a restricted mode, referred to as Charge-only mode where only the charging algorithm will be launched.

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3.3 Power Up / Power Down Scenarios

During the Charge-only mode EES3 is neither logged on to the GSM network nor are the serial interfaces fully accessible. To switch from Charge-only mode to Normal mode the ignition line (IGT) must be pulled low for at least 2 seconds. When released, the IGT line goes high and causes the module to enter the Normal mode. See also Section 3.5.7.



3.3.1.4 Reset EES3 via AT+CFUN Command

To reset and restart the EES3 module use the command AT+CFUN. You can enter AT+CFUN=,1 or AT+CFUN=x,1, where x may be in the range from 0 to 9. See [1] for details.

If configured to a fix baud rate (AT+IPR0), the module will send the URC "^SYSSTART" or "^SYSSTART AIRPLANE MODE" to notify that it is ready to operate. If autobauding is enabled (AT+IPR=0) there will be no notification. To register to the network SIM PIN authentication is necessary after restart.

3.3.1.5 Reset or Turn off EES3 in Case of Emergency

Caution: Use the EMERG_OFF line only when, due to serious problems, the software is not responding for more than 5 seconds. Pulling the EMERG_OFF line causes the loss of all information stored in the volatile memory. Therefore, this procedure is intended only for use in case of emergency, e.g. if EES3 does not respond, if reset or shutdown via AT command fails.

The EMERG_OFF signal is available on the application interface. To control the EMERG_OFF line it is recommended to use an open drain / collector driver.

The EMERG_OFF line can be used to switch off or to reset the module. In any case the EMERG_OFF line must be pulled to ground for > line the module restarts if IGT is held low for at least 400ms. Otherwise, if IGT is not low the module switches off. In this case, it can be restarted any time as described in Section 3.3.1.1.

After hardware driven restart, notification via “^SYSSTART” or “^SYSSTART AIRPLANE” URC is the same as in case of restart by IGT or AT command. To register to the network SIM PIN authentication is necessary after restart.

10ms. Then, after releasing the EMERG_OFF

3.3.1.6 Using EMERG_OFF Signal to Reset Application(s) or

External Device(s)

When the module starts up, while IGT is held low for 400ms, the EMERG_OFF signal goes low for approximately 220ms as shown in Figure 5 and Figure 6. During this period, EMERG_OFF becomes an output which can be used to reset application(s) or external device(s) connected to the module.

After this period, i.e. during operation of the module, the EMERG_OFF is an input.

Specifications of the input and output mode of EMERG_OFF can be found in Table 28.

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3.3 Power Up / Power Down Scenarios



3.3.2 Signal States after Startup

Table 8 describes the various states each interface signal passes through after startup and dur-

ing operation.

As shown in Figure 5 and Figure 6 signals are in an undefined state while the module is initializing. Once the startup initialization has completed, i.e. when the software is running, all signals are in defined state. The state of several signals will change again once the respective interface is activated or configured by AT command.

Table 8: Signal states

Signal name Undefined state

during startup

SYNC O, L O, L

CCIN I, PU(100k) I, PU(100k)

CCRST O, L O, L

CCIO O, L O, L

CCCLK O, L O, L

CCVCC O, L 2.9V

RXD0 I, PU O, H

TXD0 I, PU I, PD(330k)

CTS0 O, L O, L

RTS0 I, PU I, PD(330k)

DTR0 I, PU I

DCD0 O, L O, H

DSR0 O, L O, L

RING0 I, PU O, H

Defined state after startup initialization

Active state after configuration by AT command

SPI I2C DAI

RXD1 O, H O, H

TXD1 I, PD(330k) I, PD(330k)

CTS1 L O, L

RTS1 I, PD(330k) I, PD(330k)

SPIDI I Tristate I Tristate

SPICS I O, H O, L Tristate

I2CDAT_SPIDO I Tristate O, L/H IO

I2CCLK_SPICLK I Tristate O, L/H O, OD

DAC_OUT O, L O, L

DAI0 I O, L O, L

DAI1 I Tristate I

DAI2 I O, L

DAI3 I O, L O, L

EES3_HD_v01.100b Page 32 of 118 2009-08-12 Confidential / Released

O, L

EES3 Hardware Interface Description

3.3 Power Up / Power Down Scenarios

Table 8: Signal states



Signal name Undefined state

during startup

DAI4 I Tristate I

DAI5 I Tristate I

DAI6 I Tristate I

1. Before reaching the defined state the signal has the intermediate state O, H for about 2s.

2. Before reaching the defined state the signal has the intermediate states O, H for about 2s and O, L for about 1s.

3. Before reaching the defined state the signal has the intermediate state O, H for about 0.5s.

Defined state after startup initialization

Active state after configuration by AT command

SPI I2C DAI

Abbreviations used in Table 8:

L = Low level H = High level L/H = Low or high level I = Input O = Output

OD = Open Drain PD = Pull down with min +15µA and max. +100µA PD(…k) = Fix pull down resistor PU = Pull up with typ. -200µA and max. -350µA PU(…k) = Fix pull up resistor

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3.3 Power Up / Power Down Scenarios



3.3.3 Turn off EES3

EES3 can be turned off as follows:

• Normal shutdown: Software controlled by AT^SMSO command

• Automatic shutdown: Takes effect if board or battery temperature is out of range or if undervoltage or overvoltage conditions occur.

3.3.3.1 Turn off EES3 Using AT Command

The best and safest approach to powering down EES3 is to issue the AT^SMSO command. This procedure lets EES3 log off from the network and allows the software to enter into a secure state and safe data before disconnecting the power supply. The mode is referred to as Powerdown mode. In this mode, only the RTC stays active.

Before switching off the device sends the following response:

^SMSO: MS OFF OK ^SHUTDOWN

After sending AT^SMSO do not enter any other AT commands. There are two ways to verify when the module turns off:

• Wait for the URC “^SHUTDOWN”. It indicates that data have been stored non-volatile and the module turns off in less than 1 second.

• Also, you can monitor the PWR_IND signal. High state of PWR_IND definitely indicates that the module is switched off.

Be sure not to disconnect the supply voltage V issued and the PWR_IND signal has gone high. Otherwise you run the risk of losing data. Signal states during turn-off are shown in Figure 8.

While EES3 is in Power-down mode the application interface is switched off and must not be fed from any other source. Therefore, your application must be designed to avoid any current flow into any digital lines of the application interface, especially of the serial interfaces. No special care is required for the USB interface which is protected from reverse current.

before the URC “^SHUTDOWN” has been

BATT+

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3.3 Power Up / Power Down Scenarios



Figure 8: Signal states during turn-off procedure

Note 1: Depending on capacitance load from host application.

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

3.3.3.2 Turn on/off EES3 Applications with Integrated USB

In a Windows environment, the USB COM port emulation causes the USB port of EES3 to appear as a virtual COM port (VCOM port). The VCOM port emulation is only present when Windows can communicate with the module, and is lost when the module shuts down. Therefore, the host application or Terminal program must be disconnected from the USB VCOM port each time the module is restarted.

Restart after shutdown with AT^SMSO:

After entering the power-down command AT^SMSO on one of the interfaces (ASC0, ASC1, USB) the host application or Terminal program used on the USB VCOM port must be closed before the module is restarted by activating the IGT line.

Software reset with AT+CFUN=x,1:

Likewise, when using the reset command AT+CFUN=x,1 on one of the interfaces (ASC0, ASC1, USB) ensure that the host application or Terminal program on the USB VCOM port be closed down before the module restarts.

Note that if AT+CFUN=x,1 is entered on the USB interface the application or Terminal program on the USB VCOM port must be closed immediately after the response OK is returned.

3.3.4 Automatic Shutdown

Automatic shutdown takes effect if:

• the EES3 board is exceeding the critical limits of overtemperature or undertemperature

• the battery is exceeding the critical limits of overtemperature or undertemperature

• undervoltage or overvoltage is detected

See Charge-only mode described in Section 3.5.7 for exceptions.

The automatic shutdown procedure is equivalent to the Power-down initiated with the AT^SMSO command, i.e. EES3 logs off from the network and the software enters a secure state avoiding loss of data.

Alert messages transmitted before the device switches off are implemented as Unsolicited Result Codes (URCs). The presentation of these URCs can be enabled or disabled with the two AT commands AT^SBC and AT^SCTM. The URC presentation mode varies with the condition, please see Section 3.3.4.1 to Section 3.3.4.3 for details. For further instructions on AT commands refer to [1].

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3.3 Power Up / Power Down Scenarios



3.3.4.1 Thermal Shutdown

The board temperature is constantly monitored by an internal NTC resistor located on the PCB. The NTC that detects the battery temperature must be part of the battery pack circuit as described in Section 3.5.3 The values detected by either NTC resistor are measured directly on the board or the battery and therefore, are not fully identical with the ambient temperature.

Each time the board or battery temperature goes out of range or back to normal, EES3 instantly displays an alert (if enabled).

• URCs indicating the level "1" or "-1" allow the user to take appropriate precautions, such as protecting the module from exposure to extreme conditions. The presentation of the URCs depends on the settings selected with the AT^SCTM write command: AT^SCTM=1: Presentation of URCs is always enabled. AT^SCTM=0 (default): Presentation of URCs is enabled during the 2 minute guard period after start-up of EES3. After expiry of the 2 minute guard period, the presentation will be disabled, i.e. no URCs with alert levels "1" or ''-1" will be generated.

• URCs indicating the level "2" or "-2" are instantly followed by an orderly shutdown, except in cases described in Section 3.3.4.2. The presentation of these URCs is always enabled, i.e. they will be output even though the factory setting AT^SCTM=0 was never changed.

The maximum temperature ratings are stated in Section 5.2. Refer to Table 9 for the associated URCs.

Table 9: Temperature dependent behavior

Sending temperature alert (2min after EES3 start-up, otherwise only if URC presentation enabled)

^SCTM_A: 1 Caution: Battery close to overtemperature limit.

^SCTM_B: 1 Caution: Board close to overtemperature limit, i.e., board is 5°C below overtem-

perature limit.

^SCTM_A: -1 Caution: Battery close to undertemperature limit.

^SCTM_B: -1 Caution: Board close to undertemperature limit, i.e., board is 5°C above under-

temperature limit.

^SCTM_A: 0 Battery back to uncritical temperature range.

^SCTM_B: 0 Board back to uncritical temperature range, i.e., board is 6°C below its over- or

above its undertemperature limit.

Automatic shutdown (URC appears no matter whether or not presentation was enabled)

^SCTM_A: 2 Alert: Battery equal or beyond overtemperature limit. EES3 switches off.

^SCTM_B: 2 Alert: Board equal or beyond overtemperature limit. EES3 switches off.

^SCTM_A: -2 Alert: Battery equal or below undertemperature limit. EES3 switches off.

^SCTM_B: -2 Alert: Board equal or below undertemperature limit. EES3 switches off.

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3.3 Power Up / Power Down Scenarios



3.3.4.2 Deferred Shutdown at Extreme Temperature Conditions

In the following cases, automatic shutdown will be deferred if a critical temperature limit is exceeded:

• While an emergency call is in progress.

• During a two minute guard period after power-up. This guard period has been introduced in order to allow for the user to make an emergency call. The start of emergency call extends the guard period until the end of the call. Any other network activity may be terminated by shutdown upon expiry of the guard time. The guard period starts again when the module registers to the GSM network the first time after power-up.

If the temperature is still out of range after the guard period expires or the call ends, the module switches off immediately (without another alert message).

CAUTION! Automatic shutdown is a safety feature intended to prevent damage to the module. Extended usage of the deferred shutdown functionality may result in damage to the module, and possibly other severe consequences.

3.3.4.3 Undervoltage Shutdown

If the measured battery voltage is no more sufficient to set up a call the following URC will be presented:

^SBC: Undervoltage.

The message will be reported, for example, when you attempt to make a call while the voltage is close to the shutdown threshold of 3.2V and further power loss is caused during the transmit burst. In IDLE mode, the shutdown threshold is the sum of the module’s minimum supply voltage (3.2V) and the value of the maximum voltage drop resulting from earlier calls. This means that in IDLE mode the actual shutdown threshold may be higher than 3.2V. Therefore, to properly calculate the actual shutdown threshold application manufacturers are advised to measure the maximum voltage drops that may occur during transmit bursts.

To remind you that the battery needs to be charged soon, the URC appears several times before the module switches off.

This type of URC does not need to be activated by the user. It will be output automatically when fault conditions occur.

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3.3.4.4 Overvoltage Shutdown



The overvoltage shutdown threshold is 100mV above the maximum supply voltage V specified in Table 28.

When the supply voltage approaches the overvoltage shutdown threshold the module will send the following URC:

^SBC: Overvoltage warning

This alert is sent once.

When the overvoltage shutdown threshold is exceeded the module will send the following URC

^SBC: Overvoltage shutdown

before it shuts down cleanly:

This type of URC does not need to be activated by the user. It will be output automatically when fault conditions occur.

Keep in mind that several EES3 components are directly linked to BATT+ and, therefore, the supply voltage remains applied at major parts of EES3, even if the module is switched off. Especially the power amplifier is very sensitive to high voltage and might even be destroyed.

BATT+

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3.4 Automatic GPRS Multislot Class Change



3.4 Automatic GPRS Multislot Class Change

Temperature control is also effective for operation in EGPRS Multislot Class 12, EGPRS Multislot Class 10, GPRS Multislot Class 10 and GPRS Multislot Class 12. If the board temperature rises close to the limit specified for normal operation (see Section 5.2 for temperature limits) while data are transmitted over EGPRS or GPRS, the module automatically reverts:

• from EGPRS Multislot Class 12 (4Tx slots) to EGPRS Multislot Class 10 (2Tx slots),

• from EGPRS Multislot Class 10 (2Tx slots) to EGPRS Multislot Class 8 (1Tx),

• from GPRS Multislot Class 12 (4Tx slots) to GPRS Multislot Class 8 (1Tx)

• from GPRS Multislot Class 10 (2Tx slots) to GPRS Multislot Class 8 (1Tx)

This reduces the power consumption and, consequently, causes the board’s temperature to decrease. Once the temperature drops by 5 degrees, EES3 returns to the higher Multislot Class. If the temperature stays at the critical level or even continues to rise, EES3 will not switch back to the higher class.

After a transition from a higher Multislot Class to a lower Multislot Class a possible switchback to the higher Multislot Class is blocked for one minute.

Please note that there is not one single cause of switching over to a lower Multislot Class. Rather it is the result of an interaction of several factors, such as the board temperature that depends largely on the ambient temperature, the operating mode and the transmit power. Furthermore, take into account that there is a delay until the network proceeds to a lower or, accordingly, higher Multislot Class. The delay time is network dependent. In extreme cases, if it takes too much time for the network and the temperature cannot drop due to this delay, the module may even switch off as described in Section 3.3.4.1.

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3.5 Charging Control



3.5 Charging Control

EES3 integrates a charging management for rechargeable Lithium Ion and Lithium Polymer batteries. You can skip this chapter if charging is not your concern, or if you are not using the implemented charging algorithm.

The following sections contain an overview of charging and battery specifications. Please refer to [5] for greater detail, especially regarding requirements for batteries and chargers, appropriate charging circuits, recommended batteries and an analysis of operational issues typical of battery powered GSM/GPRS applications.

3.5.1 Hardware Requirements

EES3 has no on-board charging circuit. To benefit from the implemented charging management you are required to install a charging circuit within your application according to the Figure 54.

3.5.2 Software Requirements

Use the command AT^SBC, parameter <current>, to enter the current consumption of the host application. This information enables the EES3 module to correctly determine the end of charging and terminate charging automatically when the battery is fully charged. If the <current> value is inaccurate and the application draws a current higher than the final charge current, either charging will not be terminated or the battery fails to reach its maximum voltage. Therefore, the termination condition is defined as: current consumption dependent on operating mode of the ME plus current consumption of the external application. If used the current flowing over the VEXT line of the application interface must be added, too.

The parameter <current> is volatile, meaning that the factory default (0mA) is restored each time the module is powered down or reset. Therefore, for better control of charging, it is recommended to enter the value every time the module is started.

See [1] for details on AT^SBC.

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3.5 Charging Control



3.5.3 Battery Pack Requirements

The charging algorithm has been optimized for rechargeable Lithium batteries that meet the characteristics listed below and in Table 10. It is recommended that the battery pack you want to integrate into your EES3 application is compliant with these specifications. This ensures reliable operation, proper charging and, particularly, allows you to monitor the battery capacity using the AT^SBC command. Failure to comply with these specifications might cause AT^SBC to deliver incorrect battery capacity values.

• Li-Ion or Lithium Polymer battery pack specified for a maximum charging voltage of 4.2V and a capacity higher than 500mAh.

• Since charging and discharging largely depend on the battery temperature, the battery pack should include an NTC resistor. If the NTC is not inside the battery it must be in thermal contact with the battery. The NTC resistor must be connected between BATT_TEMP and GND.

The B value of the NTC should be in the range: 10k + B = 3435K ± 3% (alternatively acceptable: 10k +

note that the NTC is indispensable for proper charging, i.e. the charging process will not start if no NTC is present.

• Ensure that the pack incorporates a protection circuit capable of detecting overvoltage (protection against overcharging), undervoltage (protection against deep discharging) and overcurrent. Due to the discharge current profile typical of GSM applications, the circuit must be insensitive to pulsed current.

• On the EES3 module, a built-in measuring circuit constantly monitors the supply voltage. In the event of undervoltage, it causes EES3 to power down. Undervoltage thresholds are specific to the battery pack and must be evaluated for the intended model. When you eval-

uate undervoltage thresholds, consider both the current consumption of EES3 and of the

application circuit.

• The internal resistance of the battery and the protection should be as low as possible. It is recommended not to exceed 150m, even in extreme conditions at low temperature. The battery cell must be insensitive to rupture, fire and gassing under extreme conditions of temperature and charging (voltage, current).

• The battery pack must be protected from reverse pole connection. For example, the casing should be designed to prevent the user from mounting the battery in reverse orientation.

• It is recommended that the battery pack be approved to satisfy the requirements of CE conformity.

2% @ 25°C, B

5% @ 25°C, B

= 3370K +3%). Please

25/50

= 3423K to

25/85

Figure 9 shows the circuit diagram of a typical battery pack design that includes the protection

elements described above.

Figure 9: Battery pack circuit diagram

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3.5 Charging Control

Table 10: Specifications of battery packs suited for use with EES3

Battery type Rechargeable Lithium Ion or Lithium Polymer battery

Nominal voltage 3.6V / 3.7V

Capacity > 500mAh

NTC 10k ± 5% @ 25°C

approx. 5k @ 45°C approx. 26.2k @ 0°C B value range: B (25/85)=3423K to B =3435K ± 3%

Overcharge detection voltage 4.325 ± 0.025V

Deep discharge detection voltage 2.4V

Deep discharge release voltage 2.6V

Overcurrent detection 3 ± 0.5A

Overcurrent detection delay time 4 ~ 16ms

Short detection delay time 50µs

Internal resistance <130m

Note: A maximum internal resistance of 150m exceeded even after 500 cycles and under extreme conditions.





should not be

3.5.4 Batteries Tested for Use with EES3

When you choose a battery for your EES3 application you can take advantage of one of the following two batteries offered by VARTA Microbattery GmbH. Both batteries meet all requirements listed above. They have been thoroughly tested by Cinterion Wireless Modules and proved to be suited for EES3.

• LIP 653450 TC, type Lithium Ion This battery is listed in the standard product range of VARTA. It is incorporated in a shrink sleeve and has been chosen for integration into the reference setup.

• PLF 503759C.PCM, type PoLiFlex® Lithium Polymer This battery has been especially designed by VARTA for use with electronic applications like mobile phones, PDAs, MP3 players, security and telematic devices. It has almost the same properties as the above Li-Ion battery. It is type Polymer, is smaller, lighter and comes without casing.

Specifications, construction drawings and sales contacts for both VARTA batteries can be found in [5].

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3.5 Charging Control



3.5.5 Charger Requirements

For using the implemented charging algorithm and the reference charging circuit recommended in [5] and in Figure 54, the charger has to meet the following requirements: Output voltage: up to 7.0V (stabilized voltage) Output current: 500mA

Chargers with a higher output current are acceptable too, but please consider that only 500mA will be applied when a 0.3Ohms shunt resistor is connected between VSENSE and ISENSE. See [5] for further details.

3.5.6 Implemented Charging Technique

If all requirements listed above are met (appropriate external charging circuit of application, battery pack, charger, AT^SBC settings) then charging is enabled in various stages depending on the battery condition:

Trickle charging:

• Trickle charge current flows over the VCHARGE line.

• Trickle charging is done when a charger is present (connected to VCHARGE) and the battery is deeply discharged or has undervoltage.

- If deeply discharged (Deep Discharge Lockout at V

at 30mA.

- In case of undervoltage (Undervoltage Lockout at V

charged at 60mA.

- If V

Software controlled charging:

• Controlled over CHARGEGATE.

• Temperature conditions: 0°C to 45°C

• Software controlled charging is done when the charger is present (connected to VCHARGE) and the battery voltage is at least above the undervoltage threshold. Software controlled charging passes the following stages:

- Power ramp: Depending on the discharge level of the battery (i.e. the measured battery

voltage V The duration of power ramp charging is very short (less than 30 seconds).

- Fast charging: Battery is charged with constant current (approx. 500mA) until the battery

voltage reaches 4.2V (approx. 80% of the battery capacity).

- Top-up charging: The battery is charged with constant voltage of 4.2V at stepwise reduc-

ing charge current until full battery capacity is reached.

= 3.0V... 3.2V the battery is charged at 100mA.

BATT+

) the software adjusts the maximum charge current for charging the battery.

BATT+

= 0…2.5V) the battery is charged

BATT+

= 2.5…3.0V) the battery is

BATT+

Duration of charging:

• EES3 provides a software controlled timer set to 4 hours as a safety feature to prevent permanent charging of defective batteries. The duration of software controlled charging depends on the battery capacity and the level of discharge. Normally, charging stops when the battery is fully charged or, at the latest, when the software timer expires after 4 hours. If the software timer expires a charging error occurs, i.e., the AT^SBC’s battery connecting status (<bcs>) is 4. To prevent this time out the charge current should be adjusted to the battery capacity.

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3.5 Charging Control



3.5.7 Operating Modes during Charging

Of course, the battery can be charged regardless of the module's operating mode. When the GSM module is in Normal mode (SLEEP, IDLE, TALK, GPRS IDLE or GPRS DATA mode), it remains operational while charging is in progress (provided that sufficient voltage is applied).

The charging process during the Normal mode is referred to as Charge mode.

If the charger is connected to the charger input of the external charging circuit and the module’s

VCHARGE line while EES3 is in Power-down mode, EES3 goes into Charge-only mode.

While the charger remains connected it is not possible to switch the module off by using the AT^SMSO command or the automatic shutdown mechanism. Instead the following applies:

• If the module is in Normal mode and the charger is connected (Charge mode) the AT^SMSO command causes the module to shut down shortly and then start into the Charge-only mode.

• In Charge-only mode the AT^SMSO command is not usable.

• In Charge-only mode the module neither switches off when the battery or the module exceeds the critical limits of overtemperature or undertemperature.

In these cases you can only switch the module off by disconnecting the charger.

To proceed from Charge-only mode to another operating mode you have the following options, provided that the battery voltage is at least above the undervoltage threshold.

• To switch from Charge-only mode to Normal mode you have two ways:

- Hardware driven: The ignition line (IGT) must be pulled low for at least 2 seconds. When

released, the IGT line goes high and causes the module to enter the Normal mode.

- AT command driven: Set the command AT^SCFG=MEopMode/Airplane,off (please do

so although the current status of Airplane mode is already “off”). The module will enter the Normal mode, indicated by the “^SYSSTART” URC.

• To switch from Charge-only mode to Airplane mode set the command AT^SCFG=MEop- Mode/Airplane,on. The mode is indicated by the URC “^SYSSTART AIRPLANE MODE”.

• If AT^SCFG=MEopMode/Airplane/OnStart,on is set, driving the ignition line (IGT) activates

the Airplane mode. The mode is indicated by the URC “^SYSSTART AIRPLANE MODE”.

Table 11: AT commands available in Charge-only mode

AT command Use

AT+CALA Set alarm time, configure Airplane mode.

AT+CCLK Set date and time of RTC.

AT^SBC Query status of charger connection.

AT^SBV Monitor supply voltage.

AT^SCTM Query temperature range, enable/disable URCs to report critical temperature ranges

AT^SCFG Enable/disable parameters MEopMode/Airplane or MEopMode/Airplane/OnStart

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Table 12: Comparison Charge-only and Charge mode

Mode How to activate mode Description of mode



Charge mode

Chargeonly mode

Connect charger to charger input of host application charging circuit and module’s VCHARGE line while EES3 is

• operating, e.g. in IDLE or TALK mode

• in SLEEP mode

Connect charger to charger input of host application charging circuit and module’s VCHARGE line while EES3 is

• in Power-down mode

• in Normal mode: Connect charger to the VCHARGE line, then enter AT^SMSO.

Note: While trickle charging is in progress, be sure that the host application is switched off. If the application is fed from the trickle charge current the module might be prevented from proceeding to software controlled charging since the current would not be sufficient.

• Battery can be charged while GSM module remains operational and registered to the GSM network.

• In IDLE and TALK mode, the serial interfaces are accessible. All AT commands can be used to full extent.

Note: If the module operates at maximum power level (PCL5) and GPRS Class 12 at the same time the current consumption is higher than the current supplied by the charger.

• Battery can be charged while GSM module is deregistered from GSM network.

• Charging runs smoothly due to constant current consumption.

• The AT interface is accessible and allows to use the commands listed below.

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3.6 Power Saving



3.6 Power Saving

Intended for power saving, SLEEP mode reduces the functionality of the EES3 to a minimum and thus minimizes the current consumption. Settings can be made using the AT+CFUN command. For details see [1]. SLEEP mode falls in two categories:

• NON-CYCLIC SLEEP mode: AT+CFUN = 0

• CYCLIC SLEEP modes, AT+CFUN = 7 or 9.

The functionality level AT+CFUN=1 is where power saving is switched off. This is the default after startup.

NON-CYCLIC SLEEP mode permanently blocks the serial interface. The benefit of the CYCLIC SLEEP mode is that the serial interface remains accessible and that, in intermittent wakeup periods, characters can be sent or received without terminating the selected mode. This allows the EES3 to wake up for the duration of an event and, afterwards, to resume power saving. Please refer to [1] for a summary of all SLEEP modes and the different ways of waking up the module.

For CYCLIC SLEEP mode both the EES3 and the application must be configured to use hardware flow control. This is necessary since the CTSx signal is set/reset every 0.9-2.7 seconds in order to indicate to the application when the UART is active. Please refer to [1] for details on how to configure hardware flow control for the EES3.

Note: Although not explicitly stated, all explanations given in this section refer equally to ASC0 and ASC1, and accordingly to CTS0 and CTS1 or RTS0 and RTS1.

3.6.1 Network Dependency of SLEEP Modes

The power saving possibilities of SLEEP modes depend on the network the module is registered in. The paging timing cycle varies with the base station. The duration of a paging interval can be calculated from the following formula:

t = 4.615 ms (TDMA frame duration) * 51 (number of frames) * DRX value.

DRX (Discontinuous Reception) is a value from 2 to 9, resulting in paging intervals from

0.47-2.12 seconds. The DRX value of the base station is assigned by the network operator.

In the pauses between listening to paging messages, the module resumes power saving, as shown in Figure 10.

Figure 10: Power saving and paging

The varying pauses explain the different potential for power saving. The longer the pause the less power is consumed.

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3.6 Power Saving



3.6.2 Timing of the CTSx Signal in CYCLIC SLEEP Mode 7

Figure 11 illustrates the CTSx signal timing in CYCLIC SLEEP mode 7 (CFUN=7).

Figure 11: Timing of CTSx signal (if CFUN= 7)

With regard to programming or using timeouts, the UART must take the varying CTS inactivity periods into account.

3.6.3 Timing of the RTSx Signal in CYCLIC SLEEP Mode 9

In SLEEP mode 9 the falling edge of RTSx can be used to temporarily wake up the ME. In this case the activity time is at least the time set with AT^SCFG="PowerSaver/Mode9/ Timeout",<psm9to> (default 2 seconds). RTSx has to be asserted for at least a dedicated debounce time in order to wake up the ME. The debounce time specifies the minimum time period an RTSx signal has to remain asserted for the signal to be recognized as wake up signal and being processed. The debounce time is defined as 8*4.615 ms (TDMA frame duration) and is used to prevent bouncing or other fluctuations from being recognized as signals. Toggling RTSx while the ME is awake has no effect on the AT interface state, the regular hardware flow control via CTS/RTS is unaffected by this RTSx behaviour.

Figure 12: Timing of RTSx signal (if CFUN = 9)

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3.7 Summary of State Transitions (Except SLEEP Mode)



3.7 Summary of State Transitions (Except SLEEP Mode)

The following table shows how to proceed from one mode to another (grey column = present mode, white columns = intended modes).

Table 13: State transitions of EES3 (except SLEEP mode)

Intended mode -->

Present mode

POWER DOWN

Normal mode

Charge-only mode

Airplane mode

POWER DOWN mode

Normal mode AT^SMSO --- AT^SMSO if charger is con-

Charge-only mode Disconnect

Airplane mode AT^SMSO AT^SCFG=MeOpMode/Airplane,off AT^SMSO if charger is con-

1. Normal mode covers TALK, DATA, GPRS, IDLE and SLEEP modes

2. See Section 3.5.7 for details on the charging mode

--- If AT^SCFG=MeOpMode/Airplane/OnStart,off: IGT >400 ms at low level, then release IGT

Hardware driven:

charger

If AT^SCFG=MeOpMode/Airplane/OnStart,off: IGT >2s at low level, then release IGT

AT command driven: AT^SCFG= MeOpMode/Airplane,off

Connect charger to VCHARGE

nected

--- AT^SCFG=MeOpMode/Airplane,on.

nected

If AT^SCFG=MeOpMode/Airplane/OnStart,on: IGT >400 ms at low level, then release IGT.

Regardless of AT^SCFG configuration: scheduled wake-up set with AT+CALA.

AT^SCFG=MeOpMode/Airplane,on.

If AT^SCFG=MeOpMode/Airplane/OnStart,on: IGT >2s at low level, then release IGT

---

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3.8 RTC Backup



3.8 RTC Backup

The internal Real Time Clock of EES3 is supplied from a separate voltage regulator in the analog controller which is also active when EES3 is in POWER DOWN status. An alarm function is provided that allows to wake up EES3 to Airplane mode without logging on to the GSM network.

In addition, you can use the VDDLP line to backup the RTC from an external capacitor or a battery (rechargeable or non-chargeable). The capacitor is charged by the BATT+ line of EES3. If the voltage supply at BATT+ is disconnected the RTC can be powered by the capacitor. The size of the capacitor determines the duration of buffering when no voltage is applied to EES3, i.e. the larger the capacitor the longer EES3 will save the date and time.

A serial 1k resistor placed on the board next to VDDLP limits the charge current of an empty capacitor or battery.

The following figures show various sample configurations. Please refer to Table 27 for the parameters required.

Figure 13: RTC supply from capacitor

Figure 14: RTC supply from rechargeable battery

Figure 15: RTC supply from non-chargeable battery

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3.9 SIM Interface



3.9 SIM Interface

The baseband processor has an integrated SIM interface compatible with the ISO 7816 IC Card standard. This is wired to the host interface in order to be connected to an external SIM card holder. Six pads on the SMT application interface are reserved for the SIM interface.

The SIM interface supports 3V and 1.8V SIM cards. Please refer to Table 27 for electrical spec- ifications of the SIM interface lines depending on whether a 3V or 1.8V SIM card is used.

The CCIN signal serves to detect whether a tray (with SIM card) is present in the card holder. Using the CCIN line is mandatory for compliance with the GSM 11.11 recommendation if the mechanical design of the host application allows the user to remove the SIM card during operation. To take advantage of this feature, an appropriate SIM card detect switch is required on the card holder. For example, this is true for the model supplied by Molex, which has been tested to operate with EES3 and is part of the Cinterion Wireless Modules reference equipment submitted for type approval. See Chapter 8 for Molex ordering numbers.

Table 14: Signals of the SIM interface (SMT application interface)

Signal Description

CCGND Separate ground connection for SIM card to improve EMC.

A design example for grounding the SIM interface is shown in Figure 54.

CCCLK Chipcard clock, various clock rates can be set in the baseband processor.

CCVCC SIM supply voltage.

CCIO Serial data line, input and output.

CCRST Chipcard reset, provided by baseband processor.

CCIN Input on the baseband processor for detecting a SIM card tray in the holder. If the SIM is

removed during operation the SIM interface is shut down immediately to prevent destruction of the SIM. The CCIN line is active low. The CCIN signal is mandatory for applications that allow the user to remove the SIM card during operation. The CCIN signal is solely intended for use with a SIM card. It must not be used for any other purposes. Failure to comply with this requirement may invalidate the type approval of EES3.

The total cable length between the SMT application interface pads on EES3 and the connector of the external SIM card holder must not exceed 100mm in order to meet the specifications of 3GPP TS 51.010-1 and to satisfy the requirements of EMC compliance.

To avoid possible cross-talk from the CCCLK signal to the CCIO signal be careful that both lines are not placed closely next to each other. A useful approach is using the GND line to shield the CCIO line from the CCCLK line.

Note: No guarantee can be given, nor any liability accepted, if loss of data is encountered after removing the SIM card during operation. Also, no guarantee can be given for properly initializing any SIM card that the user inserts after having removed a SIM card during operation. I n this case, the application must restart EES3.

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EES3 Hardware Interface Description

3.10 Serial Interface ASC0



3.10 Serial Interface ASC0

EES3 offers an 8-wire unbalanced, asynchronous modem interface ASC0 conforming to ITUT V.24 protocol DCE signalling. The electrical characteristics do not comply with ITU-T V.28. The significant levels are 0V (for low data bit or active state) and 2.9V (for high data bit or inactive state). For electrical characteristics please refer to Table 27.

EES3 is designed for use as a DCE. Based on the conventions for DCE-DTE connections it communicates with the customer application (DTE) using the following signals:

• Port TXD @ application sends data to the module’s TXD0 signal line

• Port RXD @ application receives data from the module’s RXD0 signal line

Figure 16: Serial interface ASC0

Features:

• Includes the data lines TXD0 and RXD0, the status lines RTS0 and CTS0 and, in addition, the modem control lines DTR0, DSR0, DCD0 and RING0.

• ASC0 is primarily designed for controlling voice calls, transferring CSD, fax and GPRS data and for controlling the GSM module with AT commands.

• Full Multiplex capability allows the interface to be partitioned into three virtual channels, yet with CSD and fax services only available on the first logical channel. Please note that when the ASC0 interface runs in Multiplex mode, ASC1 cannot be used. For more details on Multiplex mode see [12].

• The DTR0 signal will only be polled once per second from the internal firmware of EES3.

• The RING0 signal serves to indicate incoming calls and other types of URCs (Unsolicited Result Code). It can also be used to send pulses to the host application, for example to wake up the application from power saving state. See [1] for details on how to configure the RING0 line by AT^SCFG.

• By default, configured for 8 data bits, no parity and 1 stop bit. The setting can be changed using the AT command AT+ICF and, if required, AT^STPB. For details see [1].

• ASC0 can be operated at fixed bit rates from 300 bps to 921600 bps.

• Autobauding supports bit rates from 1200 to 460800 bps. To employ autobauding, the bit rate tolerance of the sender should - as a rule - be less than 2%. With bit rates < however, the sender's bit rate tolerance must be less than 1%.

• Autobauding is not compatible with multiplex mode.

• Supports RTS0/CTS0 hardware flow control and XON/XOFF software flow control.

19200 bps

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3.10 Serial Interface ASC0

Table 15: DCE-DTE wiring of ASC0

V.24 circuit DCE DTE

Line function Signal direction Line function Signal direction

103 TXD0 Input TXD Output

104 RXD0 Output RXD Input

105 RTS0 Input RTS Output

106 CTS0 Output CTS Input

108/2 DTR0 Input DTR Output

107 DSR0 Output DSR Input

109 DCD0 Output DCD Input

125 RING0 Output RING Input



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EES3 Hardware Interface Description

3.11 Serial Interface ASC1



3.11 Serial Interface ASC1

EES3 offers a 4-wire unbalanced, asynchronous modem interface ASC1 conforming to ITU-T V.24 protocol DCE signalling. The electrical characteristics do not comply with ITU-T V.28. The significant levels are 0V (for low data bit or active state) and 2.9V (for high data bit or inactive state). For electrical characteristics please refer to Table 27.

EES3 is designed for use as a DCE. Based on the conventions for DCE-DTE connections it communicates with the customer application (DTE) using the following signals:

• Port TXD @ application sends data to module’s TXD1 signal line

• Port RXD @ application receives data from the module’s RXD1 signal line

Figure 17: Serial interface ASC1

Features

• Includes only the data lines TXD1 and RXD1 plus RTS1 and CTS1 for hardware handshake.

• On ASC1 no RING line is available. The indication of URCs on the second interface depends on the settings made with the AT^SCFG command. For details refer to [1].

• Configured for 8 data bits, no parity and 1 or 2 stop bits.

• ASC1 can be operated at fixed bit rates from 300 bps to 921600 bps. Autobauding is not supported on ASC1.

• Supports RTS1/CTS1 hardware flow control and XON/XOFF software flow control.

Table 16: DCE-DTE wiring of ASC1

V.24 circuit

103 TXD1 Input TXD Output

104 RXD1 Output RXD Input

105 RTS1 Input RTS Output

106 CTS1 Output CTS Input

DCE DTE Line function Signal direction Line function Signal direction

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EES3 Hardware Interface Description

3.12 USB Interface



3.12 USB Interface

EES3 supports a USB 2.0 Full Speed (12Mbit/s) device interface. The USB interface is primarily intended for use as command and data interface and for downloading firmware. The USB I/O-lines are capable of driving the signal at min 3.0V. They are 5V I/O compliant.

The USB host is responsible for supplying, across the VUSB_IN line, power to the module’s USB interface, but not to other EES3 interfaces. This is because EES3 is designed as a selfpowered device compliant with the “Universal Serial Bus Specification Revision 2.0”

Figure 18: USB circuit

To properly connect the module’s USB interface to the host a USB 2.0 compatible connector is required. For more information on how to install a USB modem driver and on how to integrate USB into EES3 applications see [10]. This Application Note also lists a selection of USB 2.0 hubs the module has been tested to operate with.

1. The specification is ready for download on http://www.usb.org/developers/docs/

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EES3 Hardware Interface Description

3.13 I2C Interface



3.13 I2C Interface

I2C is a serial, 8-bit oriented data transfer bus for bit rates up to 400kbps in Fast mode. It con-

sists of two lines, the serial data line I2CDAT and the serial clock line I2CCLK.

The EES3 module acts as a single master device, e.g. the clock I2CCLK is driven by module. I2CDAT is a bi-directional line. Each device connected to the bus is software addressable by a unique 7-bit address, and simple master/slave relationships exist at all times. The module operates as master-transmitter or as master-receiver. The customer application transmits or receives data only on request of the module.

To configure and activate the

I2C bus use the AT^SSPI command. If the I

C bus is active the two lines I2CCLK and I2DAT are locked for use as SPI lines. Vice versa, the activation of the SPI locks both lines for I

C. Detailed information on the AT^SSPI command as well explana-

tions on the protocol and syntax required for data transmission can be found in [1].

The

I2C interface can be powered from an external supply or via the VEXT line of EES3. If con-

nected to the VEXT line the the Power-down mode. If you prefer to connect the

I2C interface will be properly shut down when the module enters

I2C interface to an external power supply,

take care that VCC of the application is in the range of VEXT and that the interface is shut down when the PWR_IND signal goes high. See figures below as well as Chapter 7 and Figure 54.

In the application I2CDAT and I2CCLK lines need to be connected to a positive supply voltage via a pull-up resistor.

For electrical characteristics please refer to Table 27.

Figure 19: I

Figure 20: I

C interface connected to VCC of application

C interface connected to VEXT line of EES3

Note: Good care should be taken when creating the PCB layout of the host application: The traces of I2CCLK and I2CDAT should be equal in length and as short as possible.

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3.14 SPI Interface



3.14 SPI Interface

The SPI (serial peripheral interface) is a synchronous serial interface for control and data transfer between the EES3 module and the connected application. Only one application can be connected to the module’s SPI. The interface supports transmission rates up to 6.5 Mbit/s. It consists of four lines, the two data lines SPIDI/SPIDO, the clock line SPICLK and the chip select line SPICS.

The EES3 module acts as a single master device, e.g. the clock SPICLK is driven by module. Whenever the SPICS line is in a low state, the SPI bus is activated and data can be transferred from the module and vice versa. The SPI interface uses two independent lines for data input (SPIDI) and data output (SPIDO).

Figure 21: SPI interface

To configure and activate the SPI bus use the AT^SSPI command. If the SPI bus is active the two lines I2CCLK and I2DAT are locked for use as I2C lines. Detailed information on the AT^SSPI command as well explanations on the SPI modes required for data transmission can be found in [1].

In general, SPI supports four operation modes. The modes are different in clock phase and clock polarity. The module’s SPI mode can be configured by using the AT command AT^SSPI. Make sure the module and the connected slave device works with the same SPI mode.

Figure 22 shows the characteristics of the four SPI modes. The SPI modes 0 and 3 are the most

common used modes.

For electrical characteristics please refer to Table 27.

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3.14 SPI Interface



Figure 22: Characteristics of SPI modes

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EES3 Hardware Interface Description

3.15 Audio Interfaces



3.15 Audio Interfaces

EES3 comprises three audio interfaces available on the SMT application interface:

• Two analog audio interfaces.

• Serial digital audio interface (DAI) designed for PCM (Pulse Code Modulation).

This means you can connect up to three different audio devices, although only one interface can be operated at a time. Using the AT^SAIC command you can easily switch back and forth.

Figure 23: Audio block diagram

To suit different types of accessories the audio interfaces can be configured for different audio modes via the AT^SNFS command. The electrical characteristics of the voiceband part vary with the audio mode. For example, sending and receiving amplification, sidetone paths, noise suppression etc. depend on the selected mode and can be altered with AT commands (except for mode 1).

Both analog audio interfaces can be used to connect headsets with microphones or speakerphones. Headsets can be operated in audio mode 3, speakerphones in audio mode 2. Audio mode 5 can be used for direct access to the speech coder without signal pre or post processing.

When shipped from factory, all audio parameters of EES3 are set to interface 1 and audio mode

1. This is the default configuration optimized for the Votronic HH-SI-30.3/V1.1/0 handset and used for type approving the Cinterion Wireless Modules reference configuration. Audio mode 1 has fix parameters which cannot be modified. To adjust the settings of the Votronic handset simply change to another audio mode.

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3.15 Audio Interfaces



3.15.1 Speech Processing

The speech samples from the ADC or DAI are handled by the DSP of the baseband controller to calculate e.g. amplifications, sidetone, echo cancellation or noise suppression depending on the configuration of the active audio mode. These processed samples are passed to the speech encoder. Received samples from the speech decoder are passed to the DAC or DAI after post processing (frequency response correction, adding sidetone etc.).

Full rate, half rate, enhanced full rate, adaptive multi rate (AMR), speech and channel encoding including voice activity detection (VAD) and discontinuous transmission (DTX) and digital GMSK modulation are also performed on the GSM baseband processor.

3.15.2 Microphone Circuit

EES3 has two identical analog microphone inputs. There is no on-board microphone supply circuit, except for the internal voltage supply VMIC and the dedicated audio ground line AGND. Both lines are well suited to feed a balanced audio application or a single-ended audio application.

The AGND line on the EES3 board is especially provided to achieve best grounding conditions for your audio application. As there is less current flowing than through other GND lines of the module or the application, this solution will avoid hum and buzz problems.

While EES3 is in Power-down mode, the input voltage at any MIC line must not exceed ±0.3V relative to AGND (see also Section 5.1). In any other operating state the voltage applied to any MIC line must be in the range of 2.4V to 0V, otherwise undervoltage shutdown may be caused. Consider that the maximum full scale input voltage is V

If VMIC is used to generate the MICP line bias voltage as shown in the following examples consider that VMIC is switched off (0V) outside a call. Audio signals applied to MICP in this case must not fall below -0.3V.

If higher input levels are used especially in the line input configuration the signal level must be limited to 600mV nently.

outside a call, or AT^SNFM=,1 should be used to switch on VMIC perma-

= 1.6V.

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3.15 Audio Interfaces



3.15.2.1 Single-ended Microphone Input

Figure 24 as well as Figure 54 show an example of how to integrate a single-ended microphone

input.

= typ. 2k

= typ. 5k

= typ. 470Ohm

VMIC

= typ. 100nF

= typ. 22µF

= typ. 2.5V

MIC

= 1.0V … 1.6V, typ.

bias

1.5V

Figure 24: Single ended microphone input

has to be chosen so that the DC voltage across the microphone falls into the bias voltage

range of 1.0V to 1.6V and the microphone feeding current meets its specification.

The MICNx input is automatically self biased to the MICPx DC level. It is AC coupled via C

to a resistive divider which is used to optimize supply noise cancellation by the differential microphone amplifier in the module.

The VMIC voltage should be filtered if gains larger than 20dB are used. The filter can be attached as a simple first order RC-network (R

VMIC

and CF).

This circuit is well suited if the distance between microphone and module is kept short. Due to good grounding the microphone can be easily ESD protected as its housing usually connects to the negative terminal.

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3.15 Audio Interfaces



3.15.2.2 Differential Microphone Input

Figure 25 shows a differential solution for connecting an electret microphone.

= typ. 1k

= 470Ohm

VMIC

= typ. 100nF

= typ. 22µF

= typ. 2.5V

MIC

Vbias = 1.0V … 1.6V, typ.

1.5V

Figure 25: Differential microphone input

The advantage of this circuit is that it can be used if the application involves longer lines between microphone and module.

While VMIC is switched off, the input voltage at any MIC line should not exceed ±0.25V relative to AGND (see also Section 5.1). In this case no bias voltage has to be supplied from the customer circuit to the MIC line and any signal voltage should be smaller than Vpp = 0.5V.

VMIC can be used to generate the MICP line bias voltage as shown below. In this case the bias voltage is only applied if VMIC is switched on.

Only if VMIC is switched on, can the voltage applied to any MIC line be in the range of 2.4V to 0V. If these limits are exceeded undervoltage shutdown may be caused.

Consider that the maximum full scale input voltage is Vpp = 1.6V.

The behavior of VMIC can be controlled with the parameter micVccCtl of the AT command AT^SNFM (see [1]):

• micVccCtl=2 (default). VMIC is controlled automatically by the module. VMIC is always

switched on while the internal audio circuits of the module are active (e.g., during a call). VMIC can be used as indicator for active audio in the module.

• micVccCtl=1. VMIC is switched on continuously. This setting can be used to supply the

microphone in order to use the signal in other customer circuits as well. However, this setting leads to a higher current consumption in SLEEP modes.

• micVccCtl=0. VMIC is permanently switched off.

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3.15 Audio Interfaces



3.15.2.3 Line Input Configuration with OpAmp

Figure 26 shows an example of how to connect an opamp into the microphone circuit.

= typ. 47k

= 470Ohm

VMIC

= typ. 100nF

= typ. 22µF

= typ. 2.5V

MIC

Figure 26: Line input configuration with OpAmp

= typ. ½ V

bias

= 1.25V

MIC

The AC source (e.g. an opamp) and its reference potential have to be AC coupled to the MICNx resp. MICPx input terminals. The voltage divider between VMIC and AGND is necessary to bias the input amplifier. MICPx is automatically self biased to the MICNx DC level.

The VMIC voltage should be filtered if gains larger than 20dB are used. The filter can be attached as a simple first order RC-network (R

and CF). If a high input level and a lower gain

VMIC

are applied the filter is not necessary.

Consider that if VMIC is switched off, the signal voltage should be limited to Vpp = 0.5V and any bias voltage must not be applied. Otherwise VMIC can be switched on permanently by using AT^SNFM=,1. In this case the current consumption in SLEEP modes is higher.

If desired, MICPx via C

can also be connected to the inverse output of the AC source instead

of connecting it to the reference potential for differential line input.

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3.15 Audio Interfaces



3.15.3 Loudspeaker Circuit

The GSM module comprises two analog differential speaker outputs: EP1 and EP2. Output EP1 is able to drive a load of 8Ohms while the output EP2 can drive a load of 32Ohms. Interface EP2 can also be connected in single ended configuration. Figure 27 shows an example of a differential loudspeaker configuration.

Loudspeaker impedance

EPP1/EPN1 Z

= typ. 8Ohm

EPP2/EPN2 Z

= typ. 32Ohm

Figure 27: Differential loudspeaker configuration

3.15.4 Digital Audio Interface (DAI)

The DAI can be used to connect audio devices capable of PCM (Pulse Code Modulation) or for type approval. The following chapters describe the PCM interface functionality.

The PCM functionality allows the use of a codec like for example the MC145483. This codec replaces the analog audio inputs and outputs during a call, if digital audio is selected by AT^SAIC.

The PCM interface is configurable with the AT^SAIC command (see [1]) and supports the following features:

• Master and slave mode

• Short frame and long frame synchronization

• 256 kHz or 512 kHz bit clock frequency

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3.15 Audio Interfaces

For the PCM interface configuration the parameters <clock>, <mode> and <framemode> of the AT^SAIC command are used. The following table lists possible combinations:

Table 17: Configuration combinations for the PCM interface

Configuration <clock> <mode> <framemode>

Master, 256kHz, short frame 0 0 0

Master, 256kHz, long frame 0 0 1

Master, 512kHz, short frame 1 0 0

Master, 512kHz, long frame 1 0 1

Slave, 256kHz, short frame 0 or 1

Slave, 256kHz, long frame 0 or 1 1 1

Slave, 512kHz, short frame 0 or 1 1 0

Slave, 512kHz, long frame 0 or 1 1 1

1. In slave mode the BCLKIN signal is directly used for data shifting. Therefore, the clock frequency setting is not evaluated and may be either 0 or 1.



In all configurations the PCM interface has the following common features:

• 16 Bit linear

• 8kHz sample rate

• the most significant bit MSB is transferred first

• 125µs frame duration

• common frame sync signal for transmit and receive

Table 18 shows the assignment of the DAI0...6 signals to the PCM interface signals. To avoid

hardware conflicts different lines are used as inputs and outputs for frame sync and clock signals in master or slave operation. The table shows also which line is used for master or slave. The data lines (TXDAI and RXDAI) however are used in both modes. Unused inputs should be tied to GND via pull down resistors. In addition, DAI1 requires a 47kOhm pull down resistor to be placed as close as possible to the module. Unused outputs must be left open.

Table 18: Overview of DAI signal functions

Signal name Function for PCM Interface Input/Output

DAI0 TXDAI Master/Slave O

DAI1 RXDAI Master/Slave I

DAI2 FS (Frame sync) Master O

DAI3 BITCLK Master O

DAI4 FSIN Slave I

DAI5 BCLKIN Slave I

DAI6 nc I

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3.15 Audio Interfaces



3.15.4.1 Master Mode

To clock input and output PCM samples the PCM interface delivers a bit clock (BITCLK) which is synchronous to the GSM system clock. The frequency of the bit clock is 256kHz or 512kHz. Any edge of this clock deviates less than ±100ns (Jitter) from an ideal 256-kHz clock respectively deviates less than ±320ns from an ideal 512-kHz clock.

The frame sync signal (FS) has a frequency of 8kHz and is high for one BITCLK period before the data transmission starts if short frame is configured. If long frame is selected the frame sync signal (FS) is high during the whole transfer of the 16 data bits. Each frame has a duration of 125µs and contains 32 respective 64 clock cycles.

Figure 28: Master PCM interface Application

The timing of a PCM short frame is shown in Figure 29. The 16-bit TXDAI and RXDAI data is

transferred simultaneously in both directions during the first 16 clock cycles after the frame sync pulse. The duration of a frame sync pulse is one BITCLK period, starting at the rising edge of BITCLK. TXDAI data is shifted out at the next rising edge of BITCLK. RXDAI data (i.e. data transmitted from the host application to the module's RXDAI line) is sampled at the falling edge of BITCLK.

Figure 29: Short Frame PCM timing

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3.15 Audio Interfaces

The timing of a PCM long frame is shown in Figure 30. The 16-bit TXDAI and RXDAI data is

transferred simultaneously in both directions while the frame sync pulse FS is high. For this reason the duration of a frame sync pulse is 16 BITCLK periods, starting at the rising edge of BITCLK. TXDAI data is shifted out at the same rising edge of BITCLK. RXDAI data (i.e. data transmitted from the host application to the module's RXDAI line) is sampled at the falling edge of BITCLK.



Figure 30: Long Frame PCM timing

3.15.4.2 Slave Mode

In slave mode the PCM interface is controlled by an external bit clock and an external frame sync signal applied to the BCLKIN and FSIN lines and delivered either by the connected codec or another source. The bit clock frequency has to be in the range of 256kHz -125ppm to 512kHz +125ppm.

Data transfer starts at the falling edge of FSIN if the short frame format is selected, and at the rising edge of FSIN if long frame format is selected. With this edge control the frame sync signal is independent of the frame sync pulse length.

TXDAI data is shifted out at the rising edge of BCLKIN. RXDAI data (i.e. data transmitted from the host application to the module's RXDAI line) is sampled at the falling edge of BCLKIN.

The deviation of the external frame rate from the internal frame rate must not exceed ±125ppm. The internal frame rate of nominal 8kHz is synchronized to the GSM network.

The difference between the internal and the external frame rate is equalized by doubling or skipping samples. This happens for example every second, if the difference is 125ppm.

The resulting distortion can be neglected in speech signals.

The lines BITCLK and FS remain low in slave mode.

The below Figure 31 shows the typical slave configuration. The external codec delivers the bit clock and the frame sync signal. If the codec itself is not able to run in master mode as for example the MC145483, a third party has to generate the clock and the frame sync signal.

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3.15 Audio Interfaces

Figure 31: Slave PCM interface application

The following figures show the slave short and long frame timings. Because these are edge controlled, frame sync signals may deviate from the ideally form as shown with the dotted lines.



Figure 32: Slave PCM Timing, Short Frame selected

Figure 33: Slave PCM Timing, Long Frame selected

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EES3 Hardware Interface Description

3.16 Control Signals



3.16 Control Signals

3.16.1 Synchronization Signal

The synchronization signal serves to indicate growing power consumption during the transmit burst. The signal is generated by the SYNC line. Please note that this line can adopt three different operating modes which you can select by using the AT^SSYNC command: the mode AT^SSYNC=0 described below, and the two LED modes AT^SSYNC=1 or AT^SSYNC=2 described in [1] and Section 3.16.2.

The first function (factory default AT^SSYNC=0) is recommended if you want your application to use the synchronization signal for better power supply control. Your platform design must be such that the incoming signal accommodates sufficient power supply to the EES3 module if required. This can be achieved by lowering the current drawn from other components installed in your application.

The timing of the synchronization signal is shown below. High level of the SYNC line indicates increased power consumption during transmission.

Figure 34: SYNC signal during transmit burst

The duration of the SYNC signal is always equal, no matter whether the traffic or the access

burst are active. t is a fixed time in the range of 100s...200s.

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3.16 Control Signals



3.16.2 Using the SYNC Line to Control a Status LED

As an alternative to generating the synchronization signal, the SYNC line can be configured to drive a status LED that indicates different operating modes of the EES3 module. To take advantage of this function the LED mode must be activated with the AT^SSYNC command and the LED must be connected to the host application. The connected LED can be operated in two different display modes (AT^SSYNC=1 or AT^SSYNC=2). For details please refer to [1].

Figure 35: LED Circuit (Example)

Especially in the development and test phase of an application, system integrators are advised to use the LED mode of the SYNC line in order to evaluate their product design and identify the source of errors.

To operate the LED a buffer, e.g. a transistor or gate, must be included in your application. A sample circuit is shown in Figure 35. Power consumption in the LED mode is the same as for the synchronization signal mode. For details see Table 27, SYNC signal.

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3.16 Control Signals



3.16.3 Behavior of the RING0 Line (ASC0 Interface only)

The RING0 line is available on the first serial interface ASC0 (see also Section 3.10). The signal serves to indicate incoming calls and other types of URCs (Unsolicited Result Code).

Although not mandatory for use in a host application, it is strongly suggested that you connect the RING0 line to an interrupt line of your application. In this case, the application can be designed to receive an interrupt when a falling edge on RING0 occurs. This solution is most effective, particularly, for waking up an application from power saving. Note that if the RING0 line is not wired, the application would be required to permanently poll the data and status lines of the serial interface at the expense of a higher current consumption. Therefore, utilizing the RING0 line provides an option to significantly reduce the overall current consumption of your application.

The behavior of the RING0 line varies with the type of event:

• When a voice/fax/data call comes in the RING0 line goes low for 1s and high for another 4s. Every 5 seconds the ring string is generated and sent over the /RXD0 line. If there is a call in progress and call waiting is activated for a connected handset or handsfree device, the RING0 line switches to ground in order to generate acoustic signals that indicate the waiting call.

Figure 36: Incoming voice/fax/data call

• All other types of Unsolicited Result Codes (URCs) also cause the RING0 line to go low, however for 1 second only.

Figure 37: URC transmission

3.16.4 PWR_IND Signal

PWR_IND notifies the on/off state of the module. High state of PWR_IND indicates that the module is switched off. The state of PWR_IND immediately changes to low when IGT is pulled low. For state detection an external pull-up resistor is required.

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EES3 Hardware Interface Description

GND

RF_OUT

4 Antenna Interface



4 Antenna Interface

The RF interface has an impedance of 50Ω. EES3 is capable of sustaining a total mismatch at the antenna interface without any damage, even when transmitting at maximum RF power.

The external antenna must be matched properly to achieve best performance regarding radiated power, modulation accuracy and harmonic suppression. Antenna matching networks are not included on the EES3 module and should be placed in the host application.

Regarding the return loss EES3 provides the following values in the active band:

Table 19: Return loss in the active band

State of module Return loss of module Recommended return loss of application

Receive >

Transmit not applicable >

8dB > 12dB

12dB

4.1 Antenna Installation

The antenna is connected by soldering the antenna pad (RF_OUT, i.e., pad #96) and its neighboring ground pads (GND, i.e., pads #81 and #119) directly to the application’s PCB.

Figure 38: Antenna pads

The distance between the antenna RF_OUT pad (#96) and its neighboring GND pads (#81, #119) has been optimized for best possible impedance. To prevent mismatch, special attention should be paid to these 3 pads on the application’ PCB.

The wiring of the antenna connection, starting from the antenna pad to the application’s antenna should result in a 50Ω line impedance. Line width and distance to the GND plane needs to be optimized with regard to the PCB’s layer stack, as well as material constants.

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EES3 Hardware Interface Description

4.2 RF Line Routing Design

Note: As shown in Figure 38 the ground copper area between the antenna RF_OUT pad and the side of the module is slightly carved. This area should be used for the antenna line.

To prevent receiver desensitization due to interferences from components on the application PCB, the antenna connection line should be shielded, using Stripline technology rather than Microstrip. Please see Section 4.2 for an example of how to design the antenna connection in order to achieve the required 50Ω line impedance.

For type approval purposes, the module can be equipped with an optional coaxial antenna connector (U.FL-R-SMT) along with other necessary components. The U.FL-R-SMT connector has been chosen as antenna reference point (ARP) for the Cinterion Wireless Modules reference equipment submitted to type approve EES3. All RF data specified throughout this docu-

ment is related to the ARP.

Due to the immediate vicinity of both, the ARP and the antenna pad, no differences in the RF parameters are expected.



4.2 RF Line Routing Design

To give an example, Cinterion has developed an interface adapter board for EES3 that gives a hint of how an application board could be designed with respect to the correct RF line impedance.

The interface board has a 4 layer PCB stack - as shown in Figure 39.

Figure 39: 4 layer PCB stack for EES3 interface board

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EES3 Hardware Interface Description

4.2 RF Line Routing Design

Depending on specific material characteristics, on standard FR-4 glass fabric epoxy composite substrates (as here with 1.2mm thickness) a line width of 800µm, within a neighbouring groundplane with a clearance zone of 200µm to both sides, results in an RF line impedance of 50Ohms, as shown in Figure 39.

These line parameters - 800µm width, 1.200µm distance to ground and 200µm distance to both sides - are used for the wiring outside the area populated by the EES3 module, i.e., the transmission line to the antenna connector as shown in Figure 40.

Within the area populated by the EES3 module, the RF line width shall be reduced to 700µm and the distance to the surrounding ground area shall be increased to 450µm. This modification compensates for the module's permittivity that increases the line capacitance.

The RF line on the application board populated by the module should lead directly from the antenna pads to the side of the module thereby using the slightly carved out area that is shown in Figure 38.

For matching purposes, two components can be populated on the interface board. On the sample interface board the serial component is populated with a 0-Ohm-resistor (size 0402), the shunt element is set to N.C. (not populated).



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EES3 Hardware Interface Description

4.2 RF Line Routing Design



Figure 40: RF line on interface board. All dimensions are given in mm

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EES3 Hardware Interface Description

5 Electrical, Reliability and Radio Characteristics



5 Electrical, Reliability and Radio Characteristics

5.1 Absolute Maximum Ratings

The absolute maximum ratings stated in Table 20 are stress ratings under any conditions. Stresses beyond any of these limits will cause permanent damage to EES3.

Table 20: Absolute maximum ratings

Parameter Min Max Unit

Peak current of power supply 3.0 A

Supply voltage BATT+ -0.3 4.9 V

Voltage at digital lines in POWER DOWN mode -0.3 0.3 V

Voltage at digital lines in normal operation -0.3 3.05 or

VEXT+0.3

Voltage at analog lines in POWER DOWN mode -0.3 0.3 V

Voltage at analog lines, VMIC on

Voltage at analog lines, VMIC off

Voltage at VCHARGE line -0.3 7.0 V

Voltage at CHARGEGATE line -0.3 7.0 V

VUSB_IN -0.3 5.5 V

USB_DP, USB_DN -0.3 3.5 V

VSENSE 5.5 V

ISENSE 5.5 V

PWR_IND -0.3 10 V

VDDLP -0.3 5.5 V

1. For normal operation the voltage at analog lines with VMIC on should be within the range of 0V to 2.4V and with VMIC off within the range of -0.25V to 0.25V.

-0.3 3.0 V

-0.3 0.3 V

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EES3 Hardware Interface Description

5.2 Operating Temperatures



5.2 Operating Temperatures

Table 21: Board / battery temperature

Parameter Min Typ Max Unit

Normal operation -30 +25 +80 °C

Restricted operation

Automatic shutdown Temperature measured on EES3 board Temperature measured at battery NTC

1. Restricted operation allows normal mode speech calls or data transmission for limited time until automatic thermal shutdown takes effect. The duration of emergency calls is unlimited because automatic thermal shutdown is deferred until hang up.

2. Due to temperature measurement uncertainty, a tolerance on the stated shutdown thresholds may occur. The possible deviation is in the range of ±3°C at the overtemperature limit and ±5°C at the undertemperature limit.

-30 to -40 --- +80 to +90 °C

-40

-20

---

>+90 +60

°C

Table 22: Ambient temperature according to IEC 60068-2 (without forced air circulation)

Parameter Min Typ Max Unit

Normal operation -30 +25 +75 °C

Restricted operation

1. Temperature values are based on a setup with EES3 mounted onto an adapter without any heat generating components and connected via flex cable to the Cinterion DSB75 Evaluation Kit.

2. Restricted operation allows normal mode speech calls or data transmission for limited time until automatic thermal shutdown takes effect. The duration of emergency calls is unlimited because automatic thermal shutdown is deferred until hang up.

Table 23: Charging temperature

Parameter Min Typ Max Unit

Battery temperature for software controlled fast charging (measured at battery NTC)

-30 to -40 --- +75 to +85 °C

0---+45°C

Note:

•See Section 3.3.4 for further information about the NTCs for on-board and battery temper- ature measurement, automatic thermal shutdown and alert messages.

• When data are transmitted over EGPRS or GPRS the EES3 automatically reverts to a lower Multislot Class if the temperature increases to the limit specified for normal operation and, vice versa, returns to the higher Multislot Class if the temperature is back to normal. For details see Section 3.4.

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EES3 Hardware Interface Description

5.3 Storage Conditions



5.3 Storage Conditions

The conditions stated below are only valid for modules in their original packed state in weather protected, non-temperature-controlled storage locations. Normal storage time under these conditions is 12 months maximum.

Table 24: Storage conditions

Type Condition Unit Reference

Air temperature: Low

High

Humidity relative: Low

High

Air pressure: Low

High

Movement of surrounding air 1.0 m/s IEC TR 60271-3-1: 1K4

Water: rain, dripping, icing and frosting

Radiation: Solar

Heat

Chemically active substances Not

Mechanically active substances Not

Vibration sinusoidal:

Displacement Acceleration Frequency range

Shocks:

Shock spectrum Duration Acceleration

-25 +40

10 90 at 40°C

70 106

Not allowed --- ---

1120 600

recommended

1.5 5 2-9 9-200

semi-sinusoidal 1 50

°C IPC/JEDEC J-STD-033A

IPC/JEDEC J-STD-033A

kPa IEC TR 60271-3-1: 1K4

IEC TR 60271-3-1: 1K4

W/m

mm m/s Hz

ms m/s

ETS 300 019-2-1: T1.2, IEC 68-2-2 Bb ETS 300 019-2-1: T1.2, IEC 68-2-2 Bb

IEC TR 60271-3-1: 1C1L

IEC TR 60271-3-1: 1S1

IEC TR 60271-3-1: 1M2

IEC 68-2-27 Ea

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5.4 Reliability Characteristics



5.4 Reliability Characteristics

The test conditions stated below are an extract of the complete test specifications.

Table 25: Summary of reliability test conditions

Type of test Conditions Standard

Vibration Frequency range: 10-20Hz; acceleration: 5g

Frequency range: 20-500Hz; acceleration: 20g Duration: 20h per axis; 3 axes

DIN IEC 68-2-6

Shock half-sinus Acceleration: 500g

Shock duration: 1msec 1 shock per axis 6 positions (± x, y and z)

Dry heat Temperature: +70 ±2°C

Test duration: 16h Humidity in the test chamber: < 50%

Temperature change (shock)

Damp heat cyclic High temperature: +55°C ±2°C

Cold (constant exposure)

1. For reliability tests in the frequency range 20-500Hz the Standard’s acceleration reference value was increased to 20g.

Low temperature: -40°C ±2°C High temperature: +85°C ±2°C Changeover time: < 30s (dual chamber system) Test duration: 1h Number of repetitions: 100

Low temperature: +25°C ±2°C Humidity: 93% ±3% Number of repetitions: 6 Test duration: 12h + 12h

Temperature: -40 ±2°C Test duration: 16h

DIN IEC 68-2-27

EN 60068-2-2 Bb ETS 300 019-2-7

DIN IEC 68-2-14 Na

ETS 300 019-2-7

DIN IEC 68-2-30 Db

ETS 300 019-2-5

DIN IEC 68-2-1

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EES3 Hardware Interface Description

100

101

102

103

104

105

106

107

109

110

111

112

113

114

115

116

117

118

108

119

Supply pads

Control pads

GND pads

Analog audio pads

ASC0 pads

ASC1 pads

SIM pads

Other interface pads

RF antenna pad

Do not use

5.5 Pad Assignment and Signal Description



5.5 Pad Assignment and Signal Description

The SMT application interface on the EES3 provides connecting pads to integrate the module into external applications. Figure 41 shows the connecting pads’ numbering plan, the following

Table 26 lists the pads’ assignments.

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Figure 41: Numbering plan for connecting pads (bottom view)

EES3 Hardware Interface Description

5.5 Pad Assignment and Signal Description

Table 26: Pad assignments

Pad no. Signal name Pad no. Signal name Pad no. Signal name

1 VDDLP 41 BATTEMP 81 GND

2 VCHARGE 42 VUSB_IN 82 GND

3 EMERG_OFF 43 Do not use 83 GND

4 CTS0 44 MICN2 84 GND

5 CCRST 45 DAI3 85 GND

6 CCIO 46 DAI4 86 GND

7 CCVCC 47 CTS1 87 GND

8 USB_DP 48 Do not use 88 GND

9 USB_DN 49 EPP1 89 GND

10 VEXT 50 MICP2 90 GND

11 TXD0 51 DSR0 91 GND

12 TXD1 52 ISENSE 92 GND

13 I2CDAT_SPIDO 53 I2CCLK_SPICLK 93 GND

14 IGT 54 Do not use 94 GND

15 RXD0 55 EPN1 95 GND

16 CCIN 56 MICN1 96 RF_OUT

17 CCCLK 57 Do not use 97 GND

18 DAI6 58 Do not use 98 GND

19 DAI5 59 SPIDI 99 GND

20 Do not use 60 VMIC 100 GND

21 Do not use 61 EPP2 101 GND

22 GND 62 MICP1 102 GND

23 GND 63 Do not use 103 GND

24 SYNC 64 Do not use 104 GND

25 Do not use 65 CHARGEGATE 105 GND

26 RTS0 66 AGND 106 GND

27 RTS1 67 EPN2 107 GND

28 SPICS 68 BATT+ 108 GND

29 DAI0 69 BATT+ 109 GND

30 RING0 70 VSENSE 110 GND

31 DCD0 71 CCGND 111 GND

32 Do not use 72 GND 112 GND

33 Do not use 73 GND 113 GND

34 Do not use 74 BATT+ 114 GND

35 Do not use 75 GND 115 GND

36 POWER_IND 76 GND 116 GND

37 DAI2 77 GND 117 GND

38 DAI1 78 GND 118 GND

39 DTR0 79 GND 119 GND

40 RXD1 80 GND



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EES3 Hardware Interface Description

5.5 Pad Assignment and Signal Description

Please note that the reference voltages listed in Table 27 are the values measured directly on the EES3 module. They do not apply to the accessories connected.

Table 27: Signal description

Function Signal name IO Signal form and level Comment



Power supply

Charge Interface

BATT+ I V

max = 4.5V

typ = 3.8V

min = 3.2V during Tx burst on

board

Three lines of BATT+ and GND must be connected in parallel for supply purposes because higher peak currents may occur.

 2A, during Tx burst

Pads 68 and 74 are connected to module’s RF power amplifier, whereas pad 69 is connected to baseband processor.

n Tx = n x 577µs peak current every 4.616ms

Minimum voltage must not fall below 3.2V including drop, ripple, spikes.

GND Ground Application Ground

VCHARGE I V

min = 3.1V

max = 7.00V

This line signalizes to the processor that the charger is connected.

If unused keep line open.

BATT_TEMP I Connect NTC with R

25°C to ground. See Section 3.5.3

 10k @

NTC

Battery temperature measurement via NTC resistance.

for B value of NTC.

NTC should be installed inside or near battery pack to enable proper charging and deliver temperature values.

ISENSE I V

VSENSE I V

CHARGE-

GATE

If unused keep line open.

max = 4.65V

ISENSE is required for measuring the charge current. For this

V

max to V

mal condition

= +0.3V at nor-

BATT+

purpose, a shunt resistor for current measurement needs to be connected between ISENSE and VSENSE.

If unused connect line to VSENSE.

max = 4.5V VSENSE must be directly con-

nected to BATT+ at battery connector or external power supply.

max = 7.0V

typ = 5.2mA (for fast charging @

CHARGEGATE = 1V)

Control line to the gate of charge FET or bipolar transistor.

If unused keep line open.

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5.5 Pad Assignment and Signal Description

Table 27: Signal description (Continued)

Function Signal name IO Signal form and level Comment



External supply voltage

Power indicator

VEXT O Normal mode:

min = 2.75V

typ = 2.93V

max = 3.00V

max = -50mA

PWR_IND O V

load,max,extern

max = 10V

max = 0.4V at Imax = 2mA

= 1µF

VEXT may be used for application circuits, for example to supply power for an I

If unused keep line open.

Not available in Power-down mode. The external digital logic must not cause any spikes or glitches on voltage VEXT.

PWR_IND (Power Indicator) notifies the module’s on/off state.

PWR_IND is an open collector that needs to be connected to an external pull-up resistor. Low state of the open collector indicates that the module is on. Vice versa, high level notifies the Power-down mode.

Therefore, the line may be used to enable external voltage regulators which supply an external logic for communication with the module, e.g. level converters.

Ignition IGT I Internal pull-up: R

10nF V

max = 0.8V at Imax = -150µA

max = 4.5V (V

IGT as ON switch:

~~~

|____|

~~~

Active Low > 400ms

IGT as ON/OFF switch:

ON/OFF ~~~|_____|~~~~~|_____|~~~

0.4s | > 2s | > 1s |

 30k, CI 

)

BATT+

The IGT signal switches on the module. Depending on settings made with AT^SCFG, parameter “MeShutdown/OnIgnition”, it may also be used as ON/OFF switch.

This line must be driven low by an open drain or open collector driver.

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5.5 Pad Assignment and Signal Description

Table 27: Signal description (Continued)

Function Signal name IO Signal form and level Comment



Emergency reset

Power-on reset

EMERG_OFF I Internal pull-up: RI  10k

max = 0.3V at Imax = -140A

min = 1.70V

max = 1.90V

Signal

O Internal pull-up: R

V V V

|___|~~ Active Low >10ms

 5k

max = 0.2V at I = 2mA

min = 1.75V

max = 3.00V

Reset signal driven by the module:

(see also Figure 5 and Figure 6)

Turn-off in case of emergency: Pull down and release EMERG_OFF.Falling edge turns off the module. Data stored in the volatile memory will be lost. For orderly software controlled reset rather use the AT+CFUN command (e.g. AT+CFUN=x,1).

This line must be driven by open drain or open collector.

If unused keep line open.

Reset signal driven by the module which can be used to reset any application or device connected to the module. Only effective for approximately 220ms during the assertion of IGT when the module is about to start.

Synchronization

RTC backup

SYNC O V

VDDLP I/O R

max = 0.3V at I = 0.1mA

min = 2.3V at I = -0.1mA

max = 3.00V

n Tx = n x 577µs impulse each

4.616ms, with 180µs forward time.

 1k

max = 4.5V

= 4.5V:

BATT+

= 3.2V at IO = -500µA

= 0V:

BATT+

= 2.7V…4.5V at Imax = 10µA

There are two alternative options for using the SYNC line:

a) Indicating increased current consumption during uplink transmission burst. Note that the timing of the signal is different during handover. b) Driving a status LED to indicate different operating modes of EES3. The LED must be installed in the host application.

To select a) or b) use the AT^SSYNC command.

If unused keep line open.

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5.5 Pad Assignment and Signal Description

Table 27: Signal description (Continued)

Function Signal name IO Signal form and level Comment



ASC0 Serial interface

ASC1 Serial interface

SIM interface specified for use with 3V SIM card

RXD0 O VOLmax = 0.2V at I = 2mA

min = 2.55V at I = -0.5mA

TXD0 I

CTS0 O

RTS0 I

DTR0 I

DCD0 O

max = 3.00V

max = 0.8V

min = 2.15V

max = VEXTmin + 0.3V = 3.05V

Internal pull-down at TXD0: R

=330k

Internal pull-down at RTS0:

DSR0 O

=330k

RING0 O

RXD1 O V

TXD1 I

CTS1 O

RTS1 I

max = 0.2V at I = 2mA

min = 2.55V at I = -0.5mA

max = 3.00V

max = 0.8V

min = 2.15V

max = VEXTmin + 0.3V = 3.05V

Internal pull-down at TXD1: R

=330k

Internal pull-down at RTS1: R

=330k

CCIN I R

CCRST O R

CCIO I/O R

 100k

max = 0.6V at I = -25µA

min = 2.1V at I = -10µA

max = 3.05V

 47

max = 0.25V at I = +1mA

min = 2.5V at I = -0.5mA

max = 2.95V

 4.7k

max = 0.75V

min = -0.3V

min = 2.1V

max = CCVCCmin + 0.3V=

3.05V R

 100

max = 0.3V at I = +1mA

min = 2.5V at I = -0.5mA

max = 2.95V

CCCLK O R

CCVCC O V

 100

max = 0.3V at I = +1mA

min = 2.5V at I = -0.5mA

max = 2.95V

min = 2.75V

typ = 2.85V

max = 2.95V

max = -20mA

CCGND Ground

Serial interface for AT commands or data stream.

If unused keep lines open.

4-wire serial interface for AT commands or data stream.

If unused keep lines open.

CCIN = Low, SIM card holder closed

Maximum cable length or copper track 100mm to SIM card holder.

All signals of SIM interface are protected against ESD with a special diode array.

Usage of CCGND is mandatory.

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EES3 Hardware Interface Description

5.5 Pad Assignment and Signal Description

Table 27: Signal description (Continued)

Function Signal name IO Signal form and level Comment



SIM interface specified for use with 1.8V SIM card

C inter-

face

CCIN I R

CCRST O R

CCIO I/O R

 100k

max = 0.6V at I = -25µA

min = 2.1V at I = -10µA

max = 3.05V

 47

max = 0.25V at I = +1mA

min = 1.45V at I = -0.5mA

max = 1.90V

 4.7k

max = 0.45V

min = 1.35V

max = CCVCCmin + 0.3V

=2.00V R

 100

max = 0.3V at I = +1mA

min = 1.45V at I = -0.5mA

max = 1.90V

CCCLK O R

CCVCC O V

 100

max = 0.3V at I = +1mA

min = 1.45V at I = -0.5mA

max = 1.90V

min = 1.70V,

typ = 1.80V

max = 1.90V

max = -20mA

CCGND Ground

I2CCLK_SPICLKOVOLmax = 0.2V at I = 2mA

min = 2.55V at I = -0.5mA

max = 3.00V

I2CDAT_SPIDOI/O V

max = 0.2V at I = 2mA

max = 0.8V

min = 2.15V

max = VEXTmin + 0.3V = 3.05V

CCIN = Low, SIM card holder closed

Maximum cable length or copper track 100mm to SIM card holder.

All signals of SIM interface are protected against ESD with a special diode array.

Usage of CCGND is mandatory.

C interface is only available if

I the two lines are not used as SPI interface.

I2CDAT is configured as Open Drain and needs a pull-up resistor in the host application.

According to the I

C Bus Specification Version 2.1 for the fast mode a rise time of max. 300ns is permitted. There is also a maximum VOL=0.4V at 3mA specified.

The value of the pull-up depends on the capacitive load of the whole system (I

C Slave + lines). The maximum sink current of I2CDAT and I2CCLK is 4mA.

If unused keep lines open.

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5.5 Pad Assignment and Signal Description

Table 27: Signal description (Continued)

Function Signal name IO Signal form and level Comment



SPI Serial Periph-

SPIDI I V

I2CDAT_SPIDOO

eral Interface

I2CCLK_SPICLKO

SPICS O

USB VUSB_IN I V

USB_DN I/O Differential Output Crossover volt-

USB_DP I/O

Digital Audio interface

DAI0 O V

DAI1 I

DAI2 O

DAI3 O

DAI4 I

DAI5 I

max = 0.2V at I = 2mA

min = 2.55V at I = -0.5mA

max = 3.00V

max = 0.8V

min = 2.15V,

max = VEXTmin + 0.3V = 3.05V

min = 4.0V

max = 5.25V

age Range V

min = 1.5V, V

CRS

max = 2.0V

CRS

Line to GND: V

max = 3.6V

typ = 3.2V

min = 3.0V at I=-0.5mA

max = 0.2V at I=2mA

min = 2.24V

max = 0.96V

Driver Output Resistance Z

= 32Ohm

typ

Pullup at USB_DP Rtyp=1.5kOhms

max = 0.2V at I = 2mA

min = 2.55V at I = -0.5mA

max = 3.00V

max = 0.8V

min = 2.15V

max = VEXTmin + 0.3V = 3.05V

If the Serial Peripheral Interface is active the I

C interface is not

available.

If unused keep lines open.

See Table 18 for details.

Unused input lines should be tied to GND via pull down resistors. DAI1 requires a 47kOhm pull down resistor to be placed as close as possible to the module. Unused output lines must be left open.

DAI6 I

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EES3 Hardware Interface Description

5.5 Pad Assignment and Signal Description

Table 27: Signal description (Continued)

Function Signal name IO Signal form and level Comment



Analog Audio interface

VMIC O VOmin = 2.4V

typ = 2.5V

max = 2.6V

= 2mA

max

EPP2 O 3.0Vpp differential typical @

EPN2 O

EPP1 O 4.2Vpp (differential) typical @

EPN1 O

MICP1 I Full Scale Input Voltage: 1.6 Vpp

MICN1 I

0dBm0

4.2Vpp differential maximal @

3.14dBm0 Measurement conditions: Audio mode: 6 Outstep 3 No load Minimum differential resp. single ended load 27Ohms

0dBm0

6.0Vpp differential maximal @

3.14dBm0 Measurement conditions: Audio mode: 5 Outstep 4 No load Minimum differential load

7.5Ohms

0dBm0 Input Voltage: 1.1 Vpp At MICN1, apply external bias from

1.0V to 1.6V. Measurement conditions: Audio mode: 5

Microphone supply for customer feeding circuits

The audio output can directly operate a 32-Ohm-loudspeaker.

If unused keep lines open.

The audio output can directly operate an 8-Ohm-loudspeaker.

If unused keep lines open.

Balanced or single ended microphone or line input with external feeding circuit (using VMIC and AGND).

If unused keep lines open.

MICP2 I Full Scale Input Voltage1.6 Vpp

MICN2 I

AGND Analog Ground GND level for external audio cir-

0dBm0 Input Voltage1.1 Vpp At MICN2, apply external bias from

1.0V to 1.6V. Measurement conditions: Audio mode: 6

Balanced or single ended microphone or line input with external feeding circuit (using VMIC and AGND) and accessory detection circuit.

If unused keep lines open.

cuits

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EES3 Hardware Interface Description

5.6 Power Supply Ratings



5.6 Power Supply Ratings

Table 28: Power supply ratings

Parameter Description Conditions Min Typ Max Unit

BATT+ Supply voltage Directly measured at reference point

TP BATT+ and TP GND, see Section

3.2.2.

Voltage must stay within the min/max values, including voltage drop, ripple, spikes.

Voltage drop during transmit burst

Voltage ripple Normal condition, power control level

VDDLP

BATT+

1. Additional conditions:

- SLEEP and IDLE mode measurements started 5 minutes after switching ON the module

- Averaging times: SLEEP mode - 3 minutes; IDLE mode - 1.5 minutes

- Communication tester settings: no neighbor cells, no cell reselection

- USB interface disabled

OFF State supply current

Average standby supply current

Normal condition, power control level for P

out max

for P

out max

@ f<200kHz @ f>200kHz

RTC backup @ BATT+ = 0V 6 µA

POWER DOWN mode 50 100 µA

SLEEP mode @ DRX = 9 1.5 mA

SLEEP mode @ DRX = 5 2.0 mA

SLEEP mode @ DRX = 2 3.5 mA

IDLE mode 17 mA

3.2 3.8 4.5 V

400 mV

50 2

mV mV

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EES3 Hardware Interface Description

5.6 Power Supply Ratings

Table 29: Current consumption during Tx burst for GSM 850MHz and GSM 900MHz



Mode GSM call GPRS

Class 8

Timeslot configuration 1Tx / 1Rx 1Tx / 4Rx 2Tx / 3Rx 4Tx / 1Rx 1Tx/4Rx 2Tx / 3Rx 4Tx / 1Rx

RF power nominal 2W

(33dBm)2W(33dBm)2W(33dBm)

Radio output power reduction with AT^SCFG, parameter

<ropr>

Current characteristics

Burst current @ 50 antenna (typ.)

<ropr>

= 1 ... 3

1.9A 1.9A 1.9A 1.8A 1.5A 1.3A 1.5A 1.5A 1.3A 1.5A 950mA

<ropr>

= 1 ... 3

GPRS Class10 GPRS Class 12 EPGRS

Class 8

<ropr>

= 1

1.26W (31dBm)

<ropr>

= 2 or 3

0.8W (29dBm)

<ropr>

= 1

0.5W (27dBm)

<ropr> =

2 or 3

0.5W (27dBm)

<ropr>

= 1 ... 3

EGPRS Class 10 EGPRS Class 12

0.5W (27dBm)

<ropr>

= 1or 2

0.316W (25dBm)

<ropr>

= 3

0.5W (27dBm)

<ropr>

= 1or 2

0.125W (21dBm)

<ropr>

= 3

Burst current @ total mismatch

Average current @ 50 antenna (typ.)

Average current @ total mismatch

AT parameters are given in brackets <...> and marked italic. Test conditions: V

EES3_HD_v01.100b Page 90 of 118 2009-08-12 Confidential / Released

3.0A 3.0A 3.0A 2.3A 1.8A 1.6A 1.8A 1.8A 1.6A 1.8A 1.1A

310mA 325mA 560mA 480mA 700mA 600mA 200mA 340mA 300mA 590mA 380mA

460mA 495mA 680mA 600mA 850mA 730mA 220mA 380mA 360mA 700mA 450mA

= 4.5V, T

BATT

ambient

= 25°.

EES3 Hardware Interface Description

5.6 Power Supply Ratings

Table 30: Current consumption during Tx burst for GSM 1800MHz and GSM 1900MHz



Mode GSM call GPRS

Class 8

Timeslot configuration 1Tx / 1Rx 1Tx / 4Rx 2Tx / 3Rx 4Tx / 1Rx 1Tx/4Rx 2Tx / 3Rx 4Tx / 1Rx

RF power nominal 1W

(30dBm)1W(30dBm)1W(30dBm)

Radio output power reduction with AT^SCFG, parameter

<ropr>

Current characteristics

Burst current @ 50 antenna (typ.)

<ropr>

= 1 ... 3

1.5A 1.5A 1.5A 1.25A 1.1A 900mA 1A 1A 820mA 1A 650mA

<ropr>

= 1 ... 3

GPRS Class10 GPRS Class 12 EPGRS

Class 8

<ropr>

= 1

0.63W (28dBm)

<ropr>

= 2 or 3

0.4W (26dBm)

<ropr>

= 1

0.25W (24dBm)

<ropr> =

2 or 3

0.4W (26dBm)

<ropr>

= 1 ... 3

EGPRS Class 10 EGPRS Class 12

0.4W (26dBm)

<ropr>

= 1or 2

0.25W (24dBm)

<ropr>

= 3

0.4W (26dBm)

<ropr>

= 1or 2

0.1W (20dBm)

<ropr>

= 3

Burst current @ total mismatch

Average current @ 50 antenna (typ.)

Average current @ total mismatch

AT parameters are given in brackets <..> and marked italic. Test conditions: V

EES3_HD_v01.100b Page 91 of 118 2009-08-12 Confidential / Released

1.9A 1.9A 1.9A 1.6A 1.3A 1.1A 1.2A 1.2A 950mA 1.2A 820mA

230mA 255mA 400mA 350mA 510mA 445mA 200mA 290mA 260mA 490mA 320mA

275mA 300mA 500mA 420mA 620mA 530mA 230mA 330mA 290mA 570mA 370mA

= 4.5V, T

BATT

ambient

= 25°.

EES3 Hardware Interface Description

5.7 Electrical Characteristics of the Voiceband Part



5.7 Electrical Characteristics of the Voiceband Part

5.7.1 Setting Audio Parameters by AT Commands

The audio modes 2 to 6 can be adjusted according to the parameters listed below. Each audio mode is assigned a separate set of parameters.

Table 31: Audio parameters adjustable by AT commands

Parameter Influence to Range Gain

range

inBbcGain MICP/MICN analogue amplifier

gain of baseband controller before ADC

inCalibrate Digital attenuation of input signal

after ADC

outBbcGain EPP/EPN analogue output gain of

baseband controller after DAC

outCalibrate[n] n = 0...4

sideTone Digital attenuation of sidetone

Digital attenuation of output signal after speech decoder, before summation of sidetone and DAC Present for each volume step[n]

Is corrected internally by outBbcGain to obtain a constant sidetone independent of output volume

0...7 0...42dB 6dB steps

0...32767 -

0...3 0...-18dB 6dB steps

0...32767 -

...0dB 20 * log (inCalibrate/

...+6dB 20 * log (2 * outCali-

...0dB 20 * log (sideTone/

Calculation

32768)

brate[n]/

32768)

Note: The parameters outCalibrate and sideTone accept also values from 32768 to 65535. These values are internally truncated to 32767.

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EES3 Hardware Interface Description

5.7 Electrical Characteristics of the Voiceband Part



5.7.2 Audio Programming Model

The audio programming model shows how the signal path can be influenced by varying the AT command parameters. The parameters inBbcGain and inCalibrate can be set with AT^SNFI. All the other parameters are adjusted with AT^SNFO.

Figure 42: Audio programming model

EES3_HD_v01.100b Page 93 of 118 2009-08-12 Confidential / Released

EES3 Hardware Interface Description

5.7 Electrical Characteristics of the Voiceband Part



5.7.3 Characteristics of Audio Modes

The electrical characteristics of the voiceband part depend on the current audio mode set with the AT^SNFS command. All values are noted for default gains e.g. all parameters of AT^SNFI and AT^SNFO are left unchanged.

Table 32: Voiceband characteristics (typical)

Audio mode no. AT^SNFS=

Name

Purpose

Gain setting via AT command. Defaults:

inBbcGain outBbcGain

Default audio interface

Power supply VMIC

Sidetone

Volume control

Echo canceller

Noise reduction

MIC input signal for 0dBm0

-10dBm0 f=1024 Hz

1 (Default settings, not adjustable)

Default Handset

DSB with Votronic handset

Fix

5 2

122112

ON ON ON ON ON ON

Fix --- Adjustable Adjustable Adjustable Adjustable

Fix Adjustable Adjustable Adjustable Adjustable Adjustable

ON ON ON ON OFF OFF

6dB 12dB 12dB 6dB OFF OFF

16mV 5mV

2 3 4 5 6

Basic Handsfree

Car Kit Headset DSB with

Adjustable

2 2

--90mV

Headset User

Handset

individual handset

Adjustable

5 1

18mV 16mV

Adjustable

5 2

16mV 5mV

Plain Codec 1

Direct access to speech coder

Adjustable

0 1

400mV 126mV

Plain Codec 2

Direct access to speech coder

Adjustable

0 0

400mV 126mV

EP output signal in mV rms. @ 0dBm0, 1024 Hz, no load (default gain) / @ 3.14 dBm0

Sidetone gain at default settings

1. All values measured before the noise reduction attenuates the sine wave after a few seconds.

2. 0dBm0 cannot be achieved at 1024Hz due to attenuation of the frequency correction filter for the sending direction at this frequency.

3. Output voltage is limited to 4.2V.

660mV 240mV

default @ max volume

21dB - dB 10.0dB 21dB - dB - dB

740mV default @ max volume

660mV default @ max volume

1.47V

Vpp=6.2V

1.47V

Vpp=4.2V

Note: With regard to acoustic shock, the cellular application must be designed to avoid sending false AT commands that might increase amplification, e.g. for a highly sensitive earpiece. A protection circuit should be implemented in the cellular application.

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EES3 Hardware Interface Description

5.7 Electrical Characteristics of the Voiceband Part



5.7.4 Voiceband Receive Path

Test conditions:

• The values specified below were tested to 1kHz with default audio mode settings, unless otherwise stated.

• Default audio mode settings are: mode=5 for EPP1 to EPN1 and mode=6 for EPP2 to EPN2, outBbcGain=1 (Mode 5) or outBbcGain=0 (Mode 6), OutCalibrate=16384 (volume=4) or OutCalibrate=11585 (volume=3), sideTone=0.

Table 33: Voiceband receive path

Parameter Min Typ Max Unit Test condition / remark

Maximum differential output voltage (peak to

peak) EPP1 to EPN1

Maximum differential output voltage (peak to peak) EPP2 to EPN2

Nominal differential output voltage (peak to peak) EPP1 to EPN1

Nominal differential output voltage (peak to peak) EPP2 to EPN2

Output bias voltage Batt+/2 V from EPP1 or EPN1 to AGND

Output bias voltage 1.2 V from EPP2 or EPN2 to AGND

Differential output gain settings (gs) at 6dB stages (outBbcGain)

-18 0 dB Set with AT^SNFO

6.0

6.2

4.0

4.2

4.3

2.8

2.9

V V

8 , no load, Volume 4 @ 3.14 dBm0 (Full Scale) Batt+ = 3.6V

32, no load Volume 3 @ 3.14 dBm0 (Full Scale)

8, no load, Volume 4 @ 0 dBm0 (Nominal level)

32, no load Volume 3 @ 0 dBm0 (Nominal level)

Fine scaling by DSP (outCalibrate)

Differential output load resistance

Single ended output load resistance

Absolute gain error -0.1 0.1 dB outBbcGain=2

Idle channel noise

Signal to noise and distortion

EES3_HD_v01.100b Page 95 of 118 2009-08-12 Confidential / Released

 0 dB Set with AT^SNFO

7.5 8  From EPP1 to EPN1

27 32  From EPP2 to EPN2

27 32  From EPP2 or EPN2 to AGND

-83 -75 dBm0p outBbcGain=2

47 dB outBbcGain=2

EES3 Hardware Interface Description

5.7 Electrical Characteristics of the Voiceband Part

Table 33: Voiceband receive path

Parameter Min Typ Max Unit Test condition / remark

Frequency Response 0Hz - 100Hz 200Hz 300Hz - 3350Hz 3400Hz 4000Hz >

4400Hz

1. That means the differential voltage at EPP1/EPN1 for a sine wave must not exceed 3.8 Vpp at 8 Ohm. At 16 Ohm it can be 6 Vpp.

2. Full scale of EPP2/EPN2 is lower than full scale of EPP1/EPN1 but the default gain is the same.

3.14dBm0 will lead to clipping if the default gain is used.

3. The idle channel noise was measured with digital zero signal fed to decoder. This can be realized by setting outCalibrate and sideTone to 0 during a call.

4. The test signal is a 1 kHz, 0 dbm0 sine wave.

5. This is the frequency response from a highpass and lowpass filter combination in the DAC of the baseband chip set. If the PCM interface is used, this filter is not involved in the audio path. Audio mode 1 to 4 incorporate additional frequency response correction filters in the digital signal processing unit and are adjusted to their dedicated audio devices (see Table 32).

-0.2

-34

-1.1

0.1

-0.7

-39

-75



gs = gain setting

EES3_HD_v01.100b Page 96 of 118 2009-08-12 Confidential / Released

EES3 Hardware Interface Description

5.7 Electrical Characteristics of the Voiceband Part



5.7.5 Voiceband Transmit Path

Test conditions:

• The values specified below were tested to 1kHz and default audio mode settings, unless otherwise stated.

• Parameter setup: Audio mode=5 for MICP1 to MICN1 and 6 for MICP2 to MICN2, inBbcGain=0, inCalibrate=32767, sideTone=0

Table 34: Voiceband transmit path

Parameter Min Typ Max Unit Test condition / Remark

Full scale input voltage (peak to peak) for 3.14dBm0 MICP1 to MICN1 or AGND, MICP2 to MICN2 or AGND

Nominal input voltage (peak to peak) for 0dBm0 MICP1 to MICN1 or AGND, MICP2 to MICN2 or AGND

Input amplifier gain in 6dB steps (inBbcGain)

Fine scaling by DSP (inCalibrate) -

Microphone supply voltage VMIC 2.4 2.5 2.6 V

VMIC current 2 mA

Idle channel noise -83 -76 dBm0p

Signal to noise and distortion 70 77 dB

Frequency response 0Hz - 100Hz 200Hz 300Hz - 3350Hz 3400Hz 4000Hz >

4400Hz

0 42 dB Set with AT^SNFI

 0 dB Set with AT^SNFI

-0.2

1.6 V MICPx must be biased

1.1 V MICPx must be biased

-34

-1.1

0.1

-0.7

-39

-75

with 1.25V (VMIC/2)

1. This is the frequency response from a highpass and lowpass filter combination in the DAC of the baseband chip set. If the PCM interface is used, this filter is not involved in the audio path. Audio mode 1 to 4 incorporate additional frequency response correction filters in the digital signal processing unit and are adjusted to their dedicated audio devices (see Table 32).

EES3_HD_v01.100b Page 97 of 118 2009-08-12 Confidential / Released

EES3 Hardware Interface Description

5.8 Air Interface



Test conditions: All measurements have been performed at T

= 25°C, V

amb

BATT+ nom

= 4.0V. The reference points used on EES3 are the BATT+ and GND contacts (test points are shown in Fig-

ure 4).

Table 35: Air interface

Parameter Min Typ Max Unit

Frequency range Uplink (MS  BTS)

Frequency range Downlink (BTS  MS)

RF power @ ARP with 50 load GSM 850 31 33 35 dBm

GSM 850 824 849 MHz

E-GSM 900 880 915 MHz

GSM 1800 1710 1785 MHz

GSM 1900 1850 1910 MHz

GSM 850 869 894 MHz

E-GSM 900 925 960 MHz

GSM 1800 1805 1880 MHz

GSM 1900 1930 1990 MHz

E-GSM 900

GSM 1800

GSM 1900 283032dBm

31 33 35 dBm

28 30 32 dBm

Number of carriers GSM 850 124

E-GSM 900 174

GSM 1800 374

GSM 1900 299

Duplex spacing GSM 850 45 MHz

E-GSM 900 45 MHz

GSM 1800 95 MHz

GSM 1900 80 MHz

Carrier spacing 200 kHz

Multiplex, Duplex TDMA / FDMA, FDD

Time slots per TDMA frame 8

Frame duration 4.615 ms

Time slot duration 577 µs

Modulation GMSK

Receiver input sensitivity @ ARP BER Class II < 2.4% (static input level)

GSM 850 -102 -108 dBm

E-GSM 900 -102 -108 dBm

GSM 1800 -102 -107 dBm

GSM 1900 -102 -107 dBm

1. Power control level PCL 5

2. Power control level PCL 0

EES3_HD_v01.100b Page 98 of 118 2009-08-12 Confidential / Released

EES3 Hardware Interface Description

5.9 Electrostatic Discharge



5.9 Electrostatic Discharge

The GSM module is not protected against Electrostatic Discharge (ESD) in general. Consequently, it is subject to ESD handling precautions that typically apply to ESD sensitive components. Proper ESD handling and packaging procedures must be applied throughout the processing, handling and operation of any application that incorporates a EES3 module.

Special ESD protection provided on EES3:

• SIM interface: clamp diodes for protection against overvoltage.

The remaining ports of EES3 are not accessible to the user of the final product (since they are installed within the device) and therefore, are only protected according to the "Human Body Model" requirements.

EES3 has been tested according to the EN 61000-4-2 standard. The measured values can be gathered from the following table.

Table 36: Measured electrostatic values

Specification / Requirements Contact discharge Air discharge ETSI EN 301 489-1/7

SIM interface

JEDEC JESD22-A114D

All other interfaces

Note: Please note that the values may vary with the individual application design. For example, it matters whether or not the application platform is grounded over external devices like a computer or other equipment, such as the Cinterion Wireless Modules reference application described in Chapter 8.

± 4kV ± 8kV

± 1kV Human Body Model n.a.

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EES3 Hardware Interface Description

6 Mechanics, Mounting and Packaging

101



6 Mechanics, Mounting and Packaging

6.1 Mechanical Dimensions of EES3

Figure 43 shows the top view of EES3 and provides an overview of the board's mechanical di-

mensions. For further details see Figure 44.

Figure 43: EES3– top view

EES3_HD_v01.100b Page 100 of 118 2009-08-12 Confidential / Released

Cinterion EES3 Hardware Interface Description

Specifications and Main Features

Frequently Asked Questions

User Manual

Contents

Tab le s

Figures

0 Document History

1 Introduction

1.1 Related Documents

1.2 Terms and Abbreviations

1.3 Regulatory and Type Approval Information

1.3.1 Directives and Standards

1.3.2 SAR requirements specific to portable mobiles

1.3.3 Safety Precautions

2 Product Concept

2.1 Key Features at a Glance

2.2 EES3 System Overview

2.3 Circuit Concept

3 Application Interface

3.1 Operating Modes

3.2 Power Supply

3.2.1 Minimizing Power Losses

3.2.3 Monitoring Power Supply by AT Command

3.3 Power Up / Power Down Scenarios

3.3.1 Turn on EES3

3.3.1.1 Turn on EES3 Using Ignition Line IGT

3.3.1.2 Configuring the IGT Line for Use as ON/OFF Switch

3.3.1.3 Turn on EES3 Using the VCHARGE Signal

3.3.1.4 Reset EES3 via AT+CFUN Command

3.3.1.5 Reset or Turn off EES3 in Case of Emergency

3.3.2 Signal States after Startup

3.3.3 Turn off EES3

3.3.3.1 Turn off EES3 Using AT Command

3.3.3.2 Turn on/off EES3 Applications with Integrated USB

3.3.4 Automatic Shutdown

3.3.4.1 Thermal Shutdown

3.3.4.2 Deferred Shutdown at Extreme Temperature Conditions

3.3.4.3 Undervoltage Shutdown

3.3.4.4 Overvoltage Shutdown

3.4 Automatic GPRS Multislot Class Change

3.5 Charging Control

3.5.1 Hardware Requirements

3.5.2 Software Requirements

3.5.3 Battery Pack Requirements

3.5.4 Batteries Tested for Use with EES3

3.5.5 Charger Requirements

3.5.6 Implemented Charging Technique

3.5.7 Operating Modes during Charging

3.6 Power Saving

3.6.1 Network Dependency of SLEEP Modes

3.6.2 Timing of the CTSx Signal in CYCLIC SLEEP Mode 7

3.6.3 Timing of the RTSx Signal in CYCLIC SLEEP Mode 9

3.7 Summary of State Transitions (Except SLEEP Mode)

3.8 RTC Backup

3.9 SIM Interface

3.10 Serial Interface ASC0

3.11 Serial Interface ASC1

3.12 USB Interface

3.13 I2C Interface

3.14 SPI Interface

3.15 Audio Interfaces

3.15.1 Speech Processing

3.15.2 Microphone Circuit

3.15.2.1 Single-ended Microphone Input

3.15.2.2 Differential Microphone Input

3.15.2.3 Line Input Configuration with OpAmp

3.15.3 Loudspeaker Circuit

3.15.4 Digital Audio Interface (DAI)

3.15.4.1 Master Mode

3.15.4.2 Slave Mode

3.16 Control Signals

3.16.1 Synchronization Signal

3.16.2 Using the SYNC Line to Control a Status LED

3.16.3 Behavior of the RING0 Line (ASC0 Interface only)

3.16.4 PWR_IND Signal

4 Antenna Interface

4.1 Antenna Installation

4.2 RF Line Routing Design

5 Electrical, Reliability and Radio Characteristics