C&H Technology VS-UFL80FA60 User Manual

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www.vishay.com

SOT-227

Insulated Ultrafast Rectifier Module, 80 A

PRODUCT SUMMARY

V

R

I

per module at TC = 115 °C 80 A

F(AV)

t

rr

Type Modules - Diode FRED Pt

600 V

41 ns

VS-UFL80FA60

Vishay Semiconductors

FEATURES

• Two fully independent diodes

• Fully insulated package

• Ultrafast, soft reverse recovery, with high
operation junction temperature (T

• Low forward voltage drop

• Optimized for power conversion: welding and industrial
SMPS applications

• Easy to use and parallel

• Industry standard outline

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION

The VS-UFL80FA60 insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery
current shape, together with the best overall performance,
ruggedness and reliability characteristics.

®

These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.

max. = 175 °C)

J

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Cathode to anode voltage V

Continuous forward current per diode I

Single pulse forward current per diode I

Maximum power dissipation per module P

RMS isolation voltage V

Operating junction and storage temperatures T

Revision: 26-Oct-11

R

F

FSM

D

ISOL

, T

J

Stg

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TC = 85 °C 65

TC = 25 °C 300

TC = 85 °C 176 W

Any terminal to case, t = 1 minute 2500 V

1

, [e-mail], [e-mail]

600 V

- 55 to 175 °C

Document Number: 93643

A

VS-UFL80FA60

www.vishay.com

ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode breakdown voltage V

BR

IR = 100 μA 600 - -

IF = 30 A - 1.1 1.43

= 60 A - 1.27 1.49

I

Forward voltage V

Reverse leakage current I

Junction capacitance C

FM

RM

T

F

I

= 30 A

F

I

= 60 A - 1.17 1.35

F

T

= 125 °C

J

VR = VR rated - 0.1 50 μA

T

= 175 °C, VR = VR rated - 0.2 1.0 mA

J

VR = 600 V - 30 - pF

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

= 1 A;

I

F

dI

/dt = 200 A/μs;

F

V

= 30 V

R

I

= 30 A

F

/dt = 200 A/μs

dI

F

= 200 V

V

R

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

TJ = 25 °C

= 25 °C

T

J

T

= 125 °C - 200 -

J

TJ = 25 °C - 11 -

T

= 125 °C - 20 -

J

TJ = 25 °C - 600 -

rr

T

= 125 °C - 1900 -

J

Vishay Semiconductors

V

-1.01.23

-41-

ns

-115-

A

nC

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Junction to case, single leg conducting

Case to heatsink R

R

thJC

thCS

Flat, greased surface - 0.10 -

Weight -30- g

Mounting torque -1.3-Nm

Case style SOT-227

- - 1.02

°C/WJunction to case, both leg conducting - - 0.51

Revision: 26-Oct-11

For technical questions within your region: [e-mail]

2

, [e-mail], [e-mail]

Document Number: 93643

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000