C&H Technology VS-UFB80FA60 User Manual

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SOT-227

Insulated Ultrafast Rectifier Module, 80 A

PRODUCT SUMMARY

V

R

I

per module at TC = 104 °C 80 A

F(AV)

t

rr

Type Modules - Diode FRED Pt

600 V

34 ns

VS-UFB80FA60

Vishay Semiconductors

FEATURES

• Two fully independent diodes

• Fully insulated package

• Ultrafast, soft reverse recovery, with high
operation junction temperature (T

• Low forward voltage drop

• Optimized for power conversion: welding and industrial
SMPS applications

• Easy to use and parallel

• Industry standard outline

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION

The VS-UFB80FA60 insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery
current shape, together with the best overall performance,
ruggedness and reliability characteristics.

®

These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.

max. = 175 °C)

J

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Cathode to anode voltage V

Continuous forward current per diode I

Single pulse forward current per diode I

Maximum power dissipation per module P

RMS isolation voltage V

Operating junction and storage temperatures T

Revision: 03-Nov-11

R

F

FSM

D

ISOL

, T

J

Stg

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TC = 85 °C 57

TC = 25 °C 280

TC = 85 °C 174 W

Any terminal to case, t = 1 minute 2500 V

1

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600 V

- 55 to 175 °C

Document Number: 93642

A

VS-UFB80FA60

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ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode breakdown voltage V

BR

IR = 100 μA 600 - -

IF = 30 A - 1.32 1.69

= 60 A - 1.52 1.9

I

Forward voltage V

Reverse leakage current I

Junction capacitance C

FM

RM

T

F

I

= 30 A

F

I

= 60 A - 1.38 1.66

F

T

= 125 °C

J

VR = VR rated - 0.1 50 μA

T

= 175 °C, VR = VR rated - 0.2 1.0 mA

J

VR = 600 V - 30 - pF

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

= 1 A

I

F

dI

/dt = 200 A/μs

F

V

= 30 V

R

I

= 30 A

F

/dt = 200 A/μs

dI

F

= 200 V

V

R

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

TJ = 25 °C

= 25 °C

T

J

T

= 125 °C - 155 -

J

TJ = 25 °C - 6 -

T

= 125 °C - 14 -

J

TJ = 25 °C - 234 -

rr

T

= 125 °C - 1085 -

J

Vishay Semiconductors

V

- 1.14 1.39

-34-

ns

-79-

A

nC

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Junction to case, single leg conducting

Case to heatsink R

R

thJC

thCS

Flat, greased surface - 0.10 -

Weight -30- g

Mounting torque -1.3-Nm

Case style SOT-227

- - 1.02

°C/WJunction to case, both leg conducting - - 0.51

Revision: 03-Nov-11

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www.vishay.com

I

R

- Reverse Current (mA)

VR - Reverse Voltage (V)

0.001

0.01

0.1

1

10

100

1000

0 100 200 300 400 500 600

TJ = 175 °C

TJ = 125 °C

TJ = 25 °C

C

T

- Junction Capacitance (pF)

VR - Reverse Voltage (V)

10

100

1000

10 000

10 100 1000

Z

thJC

- Thermal Impedance (°C/W)

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10

t1- Rectangular Pulse Duration (s)

DC

Single pulse
(thermal resistance)

P

DM

t

2

t

1

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

1000

TJ = 175 °C

100

= 125 °C

T

= 25 °C

T

J

J

10

1

- Instantaneous Forward Current (A)

F

I

0 0.5 1 1.5 2 2.5 3 3.5

VFM - Forward Voltage Drop (V)

VS-UFB80FA60

Vishay Semiconductors

Fig. 1 - Typical Forward Voltage Drop Characteristics

(Per Diode)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

Revision: 03-Nov-11

Fig. 4 - Maximum Thermal Impedance Z

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3

Characteristics (Per Diode)

thJC

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Document Number: 93642

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I

F(AV)

- Average Forward Current (A)

0

25

50

75

100

125

150

175

0 102030405060708090100

Allowable Case Temperature (°C)

DC

Square wave (D = 0.50)
80 % Rated V

R

applied

t

rr

(ns)

dIF/dt (A/µs)

100 1000

VR = 200 V

IF = 30 A, 25 °C

50

75

100

125

150

175

200

IF = 30 A, 125 °C

VS-UFB80FA60

Vishay Semiconductors

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current (Per Leg)

200

180

160

140

120

100

80

60

40

Average Power Loss (W)

20

0

0 102030405060708090100110

DC

Average Forward Current - I

D = 0.05
D = 0.10
D = 0.20
D = 0.33
D = 0.50

F(AV)

RMS Limit

(A)

Fig. 6 - Forward Power Loss Characteristics (Per Leg)

30

25

20

= 200 V

V

R

IF = 30 A, 125 °C

Fig. 7 - Typical Reverse Recovery Time vs. dI

1750

1500

IF = 30 A, TJ = 125 °C

IF = 30 A, TJ = 25 °C

100 1000

(nC)

rr

Q

1250

1000

750

500

250

0

dIF/dt (A/µs)

Fig. 8 - Typical Stored Charge vs. dI

/dt

F

/dt

F

Note

(1)

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V

REV

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15

(A)

rr

I

10

5

0

100 1000

IF = 30 A, 25 °C

dIF/dt (A/μs)

x VFM at (I

F(AV)

REV

) x R

Fig. 9 - Typical Stored Current vs. dI

;

thJC

/D) (see fig. 6);

F(AV)

R

/dt

F

4

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Document Number: 93642

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Q

rr

0.5 I

RRM

dI

(rec)M

/dt

0.75 I

RRM

I

RRM

t

rr

t

b

t

a

I

F

dIF/dt

0

(1)

(2)

(3)

(4)

(5)

(1) dI

F

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

rr

- reverse recovery time measured
from zero crossing point of negative
going I

F

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

rr

- area under curve dened by t

rr

and I

RRM

trr x I

RRM

2

Q

rr

=

(5) dI

(rec)M

/dt - peak rate of change of

current during t

b

portion of t

rr

L = 70 μH

= 200 V

V

R

VS-UFB80FA60

Vishay Semiconductors

0.01 Ω

D.U.T.

dIF/dt

adjust

G

D

IRFP250

S

Fig. 10 - Reverse Recovery Parameter Test Circuit

Revision: 03-Nov-11

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Fig. 11 - Reverse Recovery Waveform and Definitions

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Document Number: 93642

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1 - Vishay Semiconductors product

2 - Ultrafast rectifier

3

- Ultrafast Pt diffused

4 - Current rating (80 = 80 A)

5 - Circuit configuration (2 separate diodes, parallel pin-out)

6 - Package indicator (SOT-227 standard isolated base)

- Voltage rating (60 = 600 V)

7

Device code

51 32 4 6 7

VS- UF B 80 F A 60

ORDERING INFORMATION TABLE

CIRCUIT CONFIGURATION

CIRCUIT

CIRCUIT

CONFIGURATION CODE

VS-UFB80FA60

Vishay Semiconductors

CIRCUIT DRAWING

Lead Assignment

2 separate diodes,
parallel pin-out

Dimensions www.vishay.com/doc?95423

Packaging information www.vishay.com/doc?95425

F

4

1

LINKS TO RELATED DOCUMENTS

43

3

2

1

2

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Document Number: 93642

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Disclaimer

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12

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Document Number: 91000