C&H Technology VS-UFB80FA40 User Manual
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www.vishay.com
SOT-227
Insulated Ultrafast Rectifier Module, 80 A
PRODUCT SUMMARY
V
R
I
per module at TC = 121 °C 80 A
F(AV)
t
rr
Type Modules - Diode FRED Pt
400 V
32 ns
VS-UFB80FA40
Vishay Semiconductors
FEATURES
• Two fully independent diodes
• Fully insulated package
• Ultrafast, soft reverse recovery, with high
operation junction temperature (T
• Low forward voltage drop
• Optimized for power conversion: welding and industrial
SMPS applications
• Easy to use and parallel
• Industry standard outline
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The VS-UFB80FA40 insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery
current shape, together with the best overall performance,
ruggedness and reliability characteristics.
®
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
max. = 175 °C)
J
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
Continuous forward current per diode I
Single pulse forward current per diode I
Maximum power dissipation per module P
RMS isolation voltage V
Operating junction and storage temperatures T
Revision: 21-Oct-11
R
F
FSM
D
ISOL
, T
J
Stg
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TC = 130 °C 40
TC = 25 °C 270
TC = 130 °C 90 W
Any terminal to case, t = 1 min 2500 V
1
400 V
- 55 to 175 °C
Document Number: 93620
A
VS-UFB80FA40
www.vishay.com
ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
Forward voltage V
Reverse leakage current I
Junction capacitance C
BR
FM
RM
IR = 100 μA 400 - -
IF = 30 A - 1.14 1.39
= 30 A, TJ = 175 °C - 0.91 1.04
I
F
VR = VR rated - - 50 μA
T
= 175 °C, VR = VR rated - - 1 mA
J
VR = 200 V - 68 - pF
T
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 32 -
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
= 25 °C
J
= 125 °C - 125 -
T
J
TJ = 25 °C - 6.8 -
T
= 125 °C - 15 -
J
TJ = 25 °C - 215 -
T
= 125 °C - 900 -
J
I
= 30 A
F
/dt = 200 A/μs
dI
F
= 200 V
V
R
Vishay Semiconductors
V
-68-
nsT
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case, single leg conducting
Case to heatsink R
R
thJC
thCS
Flat, greased surface - 0.10 -
Weight -30- g
Mounting torque -1.3-Nm
Case style SOT-227
--1.0
°C/WJunction to case, both leg conducting - - 0.50
Revision: 21-Oct-11
2
Document Number: 93620
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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