C&H Technology VS-UFB80FA20 User Manual

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SOT-227

Insulated Ultrafast Rectifier Module, 80 A

PRODUCT SUMMARY

V

R

per module at TC = 129 °C 80 A

I

F(AV)

t

rr

Type Modules - Diode FRED Pt

200 V

27 ns

VS-UFB80FA20

Vishay Semiconductors

FEATURES

• Two fully independent diodes

• Fully insulated package

• Ultrafast, soft reverse recovery, with high
operation junction temperature (T

• Low forward voltage drop

• Optimized for power conversion: welding and industrial
SMPS applications

• Easy to use and parallel

• Industry standard outline

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION

The VS-UFB80FA20 insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery
current shape, together with the best overall performance,
ruggedness and reliability characteristics.

®

These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.

max. = 175 °C)

J

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Cathode to anode voltage V

Continuous forward current per diode I

Single pulse forward current per diode I

Maximum power dissipation per module P

RMS isolation voltage V

Operating junction and storage temperatures T

Revision: 26-Oct-11

R

F

FSM

D

ISOL

, T

J

Stg

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TC = 137 °C 40

TC = 25 °C 280

TC = 137 °C 76 W

Any terminal to case, t = 1 minute 2500 V

1

, [e-mail], [e-mail]

200 V

- 55 to 175 °C

Document Number: 93607

A

VS-UFB80FA20

www.vishay.com

ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode breakdown voltage V

Forward voltage V

Reverse leakage current I

Junction capacitance C

BR

FM

RM

IR = 100 μA 200 - -

IF = 30 A - 0.96 1.08

= 30 A, TJ = 175 °C - 0.77 0.89

I

F

VR = VR rated - - 50 μA

T

= 175 °C, VR = VR rated - - 1 mA

J

VR = 200 V - 119 - pF

T

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 27 -

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

rr

= 25 °C

J

= 125 °C - 53 -

T

J

TJ = 25 °C - 3.5 -

T

= 125 °C - 7.0 -

J

TJ = 25 °C - 53 -

T

= 125 °C - 184 -

J

I

= 30 A

F

/dt = 200 A/μs

dI

F

= 100 V

V

R

Vishay Semiconductors

V

-34-

nsT

A

nC

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Junction to case, single leg conducting

Case to heatsink R

R

thJC

thCS

Flat, greased surface - 0.10 -

Weight -30- g

Mounting torque -1.3-Nm

Case style SOT-227

--1

°C/WJunction to case, both leg conducting - - 0.5

Revision: 26-Oct-11

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1

10

TJ = 175 °C
T

J

= 25 °C

0

VF - Forward Voltage Drop (V)

I

F

- Instantaneous Forward Current (A)

100

1000

0.5 1.5 2.512

Reverse Voltage - V (V)

Junction Capacitance - C

T

(pF)

10

100

1000

1 10 100 1000

T

J

= 25 °C

- Reverse Current (µA)

R

I

1000

100

0.1

0.01

VS-UFB80FA20

Vishay Semiconductors

TJ = 175 °C

10

1

TJ = 25 °C

Fig. 1 - Typical Forward Voltage Drop Characteristics

(Per Leg)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

10

0.001

0 100 150

50

VR - Reverse Voltage (V)

Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

200

- Thermal Impedance (°C/W)

thJC

Z

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1

P

DM

t

0.1

DC

0.01

0.0001 0.001 0.01 0.1 1 10

Single pulse
(thermal resistance)

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

1

t

2

1/t2

+ T

thJC

t1- Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance Z

3

Characteristics (Per Diode)

thJC

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C

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I

F(AV)

- Average Forward Current (A)

Allowable Case Temperature (°C)

DC

0

25

50

75

100

125

150

175

0 20 40 60 80 100 120

Square Wave (D = 0.5)
Rated V

R

applied

I

F(AV)

- Average Forward Current (A)

Average Power Loss (W)

0

10

20

30

40

50

60

70

80

0 1020304050607080

RMS Limit

D = 0.05
D = 0.10
D = 0.20

D = 0.50

D = 0.33

DC

VS-UFB80FA20

Vishay Semiconductors

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current (Per Leg)

Fig. 6 - Forward Power Loss Characteristics (Per Leg)

(ns)

rr

t

70

60

50

40

30

20

10

If = 30 A
V

= 100 V

rr

TJ = 125 ˚C

TJ = 25 ˚ C

100 1000

dIF/dt (A/μs)

Fig. 7 - Typical Reverse Recovery Time vs. dI

(nC)

rr

Q

550

500

450

400

350

300

250

200

150

100

If = 30 A

= 100 V

V

rr

TJ = 125 °C

TJ = 25 °C

50

0

100 1000

dIF/dt (A/μs)

Fig. 8 - Typical Stored Charge vs. dI

/dt

F

/dt

F

Note

(1)

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V

REV

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) x R

;

thJC

/D) (see fig. 6);

F(AV)

R

4

, [e-mail], [e-mail]

REV

x VFM at (I

F(AV)

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Document Number: 93607

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Q

rr

0.5 I

RRM

dI

(rec)M

/dt

0.75 I

RRM

I

RRM

t

rr

t

b

t

a

I

F

dIF/dt

0

(1)

(2)

(3)

(4)

(5)

(1) dI

F

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

rr

- reverse recovery time measured
from zero crossing point of negative
going I

F

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

rr

- area under curve dened by t

rr

and I

RRM

trr x I

RRM

2

Q

rr

=

(5) dI

(rec)M

/dt - peak rate of change of

current during t

b

portion of t

rr

L = 70 μH

= 200 V

V

R

VS-UFB80FA20

Vishay Semiconductors

0.01 Ω

D.U.T.

dIF/dt

adjust

G

D

IRFP250

S

Fig. 9 - Reverse Recovery Parameter Test Circuit

Revision: 26-Oct-11

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Fig. 10 - Reverse Recovery Waveform and Definitions

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ORDERING INFORMATION TABLE

VS-UFB80FA20

Vishay Semiconductors

Device code

CIRCUIT CONFIGURATION

CIRCUIT

2 separate diodes,
parallel pin-out

CIRCUIT

CONFIGURATION CODE

VS- UF B 80 F A 20

51 32 4 6 7

1 - Vishay Semiconductors product

2 - Ultrafast rectifier

3

- Ultrafast Pt diffused

4 - Current rating (80 = 80 A)

5 - Circuit configuration (2 separate diodes, parallel pin-out)

6 - Package indicator (SOT-227 standard isolated base)

- Voltage rating (20 = 200 V)

7

CIRCUIT DRAWING

Lead Assignment

F

4

1

43

3

2

1

2

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95423

Packaging information www.vishay.com/doc?95425

Revision: 26-Oct-11

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Document Number: 93607

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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12

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Document Number: 91000