C&H Technology VS-UFB230FA60 User Manual

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Insulated Ultrafast Rectifier Module, 230 A

SOT-227

PRODUCT SUMMARY

V

R

I

per module at TC = 88 °C 230 A

F(AV)

t

rr

Type Modules - Diode FRED Pt

600 V

43 ns

VS-UFB230FA60

Vishay Semiconductors

FEATURES

• Two fully independent diodes

• Fully insulated package

• Ultrafast, soft reverse recovery, with high
operation junction temperature (T

• Low forward voltage drop

• Optimized for power conversion: welding and industrial
SMPS applications

• Easy to use and parallel

• Industry standard outline

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION

The VS-UFB230FA60 insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery
current shape, together with the best overall performance,
ruggedness and reliability characteristics.

These devices are thus intended for high frequency

®

applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.

max. = 175 °C)

J

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Cathode to anode voltage V

Continuous forward current per diode I

Single pulse forward current per diode I

Maximum power dissipation per module P

RMS isolation voltage V

Operating junction and storage temperatures T

Note

(1)

Maximum continuous forward current must be limited to 100 A to do not exceed the maximum temperature of power terminals.

Revision: 03-Nov-11

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

J

F

FSM

ISOL

, T

R

(1)

D

Stg

TC = 85 °C 141

TC = 25 °C 1400

TC = 85 °C 416 W

Any terminal to case, t = 1 minute 2500 V

1

, [e-mail], [e-mail]

600 V

- 55 to 175 °C

Document Number: 93641

A

VS-UFB230FA60

www.vishay.com

ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode breakdown voltage V

BR

IR = 100 μA 600 - -

IF = 100 A - 1.46 1.78

= 100 A, TJ = 125 °C - 1.23 1.52

I

Forward voltage V

Reverse leakage current I

Junction capacitance C

FM

RM

T

F

I

= 200 A - 1.70 2.05

F

I

= 200 A, TJ = 125 °C - 1.50 1.78

F

VR = VR rated - 0.1 50 μA

T

= 175 °C, VR = VR rated - 0.30 2 mA

J

VR = 600 V - 77 - pF

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 43 -

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

rr

= 25 °C

J

T

= 125 °C - 182 -

J

TJ = 25 °C - 7 -

T

= 125 °C - 18 -

J

TJ = 25 °C - 290 -

T

= 125 °C - 1595 -

J

I

= 50 A

F

/dt = 200 A/μs

dI

F

= 200 V

V

R

Vishay Semiconductors

V

-83-

nsT

A

nC

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Junction to case, single leg conducting

Case to heatsink R

R

thJC

thCS

Flat, greased surface - 0.05 -

Weight -30- g

Mounting torque -1.3-Nm

Case style SOT-227

- - 0.43

°C/WJunction to case, both leg conducting - - 0.215

Revision: 03-Nov-11

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

I

F

- Instantaneous Forward Current (A)

VF - Forward Voltage Drop (V)

1

00.5

21.512.5

10

100

1000

TJ = 175 °C

T

J

= 125 °C

T

J

= 25 °C

I

R

- Reverse Current (mA)

VR - Reverse Voltage (V)

93641_02

0.001

0.01

0.1

1

10

100

1000

0 100 200 300 400 500 600

TJ = 175 °C

TJ = 125 °C

TJ = 25 °C

C

T

- Junction Capacitance (pF)

VR - Reverse Voltage (V)

93641_03

10

100

1000

10 000

10 100 1000

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance (°C/W)

93641_04

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10

DC

VS-UFB230FA60

Vishay Semiconductors

Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

Revision: 03-Nov-11

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Fig. 4 - Maximum Thermal Impedance Z

Characteristics

thJC

3

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Document Number: 93641

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Allowable Case Temperature (°C)

I

F(AV)

- Average Forward Current (A)

93641_05

0

25

50

75

100

125

150

175

0 40 80 120 160 200 240 280

DC

Square wave (D = 0.50)

80 % Rated V

R

applied

t

rr

(ns)

dIF/dt (A/µs)

100 1000

93641_07

50

100

150

200

250

VR = 200 V

IF = 50 A, 25 °C

I

F

= 50 A, 125 °C

I

rr

(A)

dIF/dt (A/μs)

93641_09

100 1000

0

10

20

30

40

VR = 200 V

I

F

= 50 A, 125 °C

I

F

= 50 A, 25 °C

VS-UFB230FA60

Vishay Semiconductors

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

500

400

300

200

100

Average Power Loss (W)

0

0 40 80 120 160 200 240 280

93641_06

Average Forward Current - I

DC

Fig. 6 - Forward Power Loss Characteristics

RMS Limit

D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75

F(AV)

(A)

Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt

3500

V

= 200 V

3000

2500

2000

(nC)

rr

1500

Q

1000

93641_08

R

IF = 50 A, TJ = 125 °C

500

0

IF = 50 A, TJ = 25 °C

dIF/dt (A/µs)

Fig. 8 - Typical Stored Charge vs. dI

0001001

/dt

F

Note

(1)

Formula used: TC = TJ - (Pd +Pd

Pd = Forward power loss = I
Pd

REV

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= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

REV

x VFM at (I

F(AV)

) x R

thJC

;

F(AV)

Fig. 9 - Typical I

/D) (see fig. 6);

Diode vs. dIF/dt

rr

R

4

Document Number: 93641

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Q

rr

0.5 I

RRM

dI

(rec)M

/dt

0.75 I

RRM

I

RRM

t

rr

t

b

t

a

I

F

dIF/dt

0

(1)

(2)

(3)

(4)

(5)

(1) dI

F

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

rr

- reverse recovery time measured
from zero crossing point of negative
going I

F

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

rr

- area under curve dened by t

rr

and I

RRM

trr x I

RRM

2

Q

rr

=

(5) dI

(rec)M

/dt - peak rate of change of

current during t

b

portion of t

rr

L = 70 μH

= 200 V

V

R

VS-UFB230FA60

Vishay Semiconductors

0.01 Ω

D.U.T.

dIF/dt

adjust

G

D

IRFP250

S

Fig. 10 - Reverse Recovery Parameter Test Circuit

Revision: 03-Nov-11

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Fig. 11 - Reverse Recovery Waveform and Definitions

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Document Number: 93641

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ORDERING INFORMATION TABLE

VS-UFB230FA60

Vishay Semiconductors

Device code

CIRCUIT CONFIGURATION

CIRCUIT

2 separate diodes,
parallel pin-out

CIRCUIT

CONFIGURATION CODE

VS- UF B 230 F A 60

1

32 4 6 7

1 - Vishay Semiconductors product

2 - Ultrafast rectifier

3

- Ultrafast Pt diffused

4 - Current rating (230 = 230 A)

5 - Circuit configuration (2 separate diodes, parallel pin-out)

6 - Package indicator (SOT-227 standard isolated base)

- Voltage rating (60 = 600 V)

7

F

4

5

CIRCUIT DRAWING

3

Lead Assignment

43

1

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95423

Packaging information www.vishay.com/doc?95425

2

1

2

Revision: 03-Nov-11

For technical questions within your region: [e-mail]

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Document Number: 93641

Legal Disclaimer Notice

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Vishay

Disclaimer

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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12

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Document Number: 91000