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www.vishay.com
Insulated Ultrafast Rectifier Module, 230 A
SOT-227
PRODUCT SUMMARY
V
R
I
per module at TC = 88 °C 230 A
F(AV)
t
rr
Type Modules - Diode FRED Pt
600 V
43 ns
VS-UFB230FA60
Vishay Semiconductors
FEATURES
• Two fully independent diodes
• Fully insulated package
• Ultrafast, soft reverse recovery, with high
operation junction temperature (T
• Low forward voltage drop
• Optimized for power conversion: welding and industrial
SMPS applications
• Easy to use and parallel
• Industry standard outline
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The VS-UFB230FA60 insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery
current shape, together with the best overall performance,
ruggedness and reliability characteristics.
These devices are thus intended for high frequency
®
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
max. = 175 °C)
J
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
Continuous forward current per diode I
Single pulse forward current per diode I
Maximum power dissipation per module P
RMS isolation voltage V
Operating junction and storage temperatures T
Note
(1)
Maximum continuous forward current must be limited to 100 A to do not exceed the maximum temperature of power terminals.
Revision: 03-Nov-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
J
F
FSM
ISOL
, T
R
(1)
D
Stg
TC = 85 °C 141
TC = 25 °C 1400
TC = 85 °C 416 W
Any terminal to case, t = 1 minute 2500 V
1
, DiodesAsia@vishay.com, EuropeAmericas@vishay.com
600 V
- 55 to 175 °C
Document Number: 93641
A
VS-UFB230FA60
www.vishay.com
ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
BR
IR = 100 μA 600 - -
IF = 100 A - 1.46 1.78
= 100 A, TJ = 125 °C - 1.23 1.52
I
Forward voltage V
Reverse leakage current I
Junction capacitance C
FM
RM
T
F
I
= 200 A - 1.70 2.05
F
I
= 200 A, TJ = 125 °C - 1.50 1.78
F
VR = VR rated - 0.1 50 μA
T
= 175 °C, VR = VR rated - 0.30 2 mA
J
VR = 600 V - 77 - pF
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 43 -
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
= 25 °C
J
T
= 125 °C - 182 -
J
TJ = 25 °C - 7 -
T
= 125 °C - 18 -
J
TJ = 25 °C - 290 -
T
= 125 °C - 1595 -
J
I
= 50 A
F
/dt = 200 A/μs
dI
F
= 200 V
V
R
Vishay Semiconductors
V
-83-
nsT
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case, single leg conducting
Case to heatsink R
R
thJC
thCS
Flat, greased surface - 0.05 -
Weight -30- g
Mounting torque -1.3-Nm
Case style SOT-227
- - 0.43
°C/WJunction to case, both leg conducting - - 0.215
Revision: 03-Nov-11
For technical questions within your region: DiodesAmericas@vishay.com
2
, DiodesAsia@vishay.com, EuropeAmericas@vishay.com
Document Number: 93641
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000