C&H Technology VS-UFB201FA40 User Manual

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Insulated Ultrafast Rectifier Module, 200 A

SOT-227

PRODUCT SUMMARY

V

R

I

per module at TC = 86 °C 200 A

F(AV)

t

rr

Type Modules - Diode FRED Pt

400 V

40 ns

VS-UFB201FA40

Vishay Semiconductors

FEATURES

• Two fully independent diodes

• Fully insulated package

• Ultrafast, soft reverse recovery, with high junction
temperature (T

• Low forward voltage drop

• Optimized for power conversion: welding and industrial
SMPS applications

• Easy to use and parallel

• Industry standard outline

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION

The VS-UFB201FA40 insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery
current shape, together with the best overall performance,
ruggedness and reliability characteristics.

These devices are thus intended for high frequency

®

applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.

max. = 175 °C)

J

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Cathode to anode voltage V

Continuous forward current per diode I

Single pulse forward current per diode I

Maximum power dissipation per module P

RMS isolation voltage V

Maximum junction temperature T

Maximum case temperature T

Storage temperature T

Note

(1)

Maximum continuous forward current must be limited to 100 A to do not exceed the maximum temperature of power terminals.

Revision: 29-Nov-11

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F

FSM

ISOL

STG

R

(1)

D

J

C

TC = 88 °C 120

TC = 25 °C 600

TC = 88 °C 311 W

Any terminal to case, t = 1 minute 2500 V

1

, [e-mail], [e-mail]

400 V

- 55 to 175 °C

150 °C

- 55 to 150 °C

Document Number: 93793

A

VS-UFB201FA40

www.vishay.com

ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode breakdown voltage V

BR

IR = 100 μA 400 - -

IF = 100 A - 1.33 1.59

= 100 A, TJ = 125 °C - 1.19 1.28

I

Forward voltage V

Reverse leakage current I

Junction capacitance C

FM

RM

T

F

I

= 200 A - 1.56 1.91

F

I

= 200 A, TJ = 125 °C - 1.49 1.64

F

VR = VR rated - 0.20 50 μA

T

= 175 °C, VR = VR rated - 0.40 2 mA

J

VR = 400 V - 76 - pF

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 40 -

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

rr

= 25 °C

J

T

= 125 °C - 160 -

J

TJ = 25 °C - 7 -

T

= 125 °C - 16 -

J

TJ = 25 °C - 310 -

T

= 125 °C - 1300 -

J

I

= 50 A

F

/dt = 200 A/μs

dI

F

= 200 V

V

R

Vishay Semiconductors

V

-80-

nsT

A

nC

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Junction to case, single leg conducting

Case to heatsink R

R

thJC

thCS

Flat, greased surface - 0.075 -

Weight -30- g

Mounting torque -1.3-Nm

Case style SOT-227

- - 0.56

°C/WJunction to case, both leg conducting - - 0.28

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10

100

1000

10 000

10 100 1000

C

T

- Junction Capacitance (pF)

VR- Reverse Voltage (V)

Z

thJC

- Thermal Impedance (°C/W)

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10

t1- Rectangular Pulse Duration (s)

DC

Single pulse
(thermal resistance)

P

DM

t

2

t

1

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

VS-UFB201FA40

Vishay Semiconductors

1000

TJ= 175 °C

TJ= 125 °C

= 25 °C

T

J

10

1

00.511.522.5

- Instantaneous Forward Current (A)

F

I

100

VF- Forward Voltage Drop (V)

Fig. 1 - Typical Forward Voltage Drop Characteristics

(Per Leg)

- Reverse Current (μA)

R

I

1000

TJ= 175 °C

100

10

1

0.1

0.01

0.001
0 50 100 150 200 250 300 350 400

TJ= 125 °C

TJ= 25 °C

VR- Reverse Voltage (V)

Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

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Fig. 4 - Maximum Thermal Impedance Z

Characteristics (Per Leg)

thJC

3

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Document Number: 93793

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50

75

100

125

150

175

200

225

250

0001001

t

rr

(ns)

dIF/dt (A/μs)

IF= 25 A

125 °C

VR= 200 V

25 °C

IF= 50 A

0

500

1000

1500

2000

2500

3000

0001001

Q

rr

(nC)

dIF/dt (A/μs)

IF= 25 A

125 °C

VR= 200 V

25 °C

IF= 50 A

0

10

20

30

40

0001001

t

rr

(ns)

dIF/dt (A/μs)

IF= 25 A

125 °C

VR= 200 V

25 °C

IF= 50 A

175

150

125

100

75

Square wave (D = 0.50)

50

Allowable Case Temperature (°C)

80 % Rated V

25

see note

0

0 40 80 120 160 200

I

F(AV)

applied

R

(1)

- Average Forward Current (A)

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current (Per Leg)

400

350

300

250

200

150

100

Average Power Loss (W)

50

0

0 40 80 120 160 200 240

I

- Average Forward Current (A)

F(AV)

DC

Fig. 6 - Forward Power Loss Characteristics (Per Leg)

DC

RMS Limit

D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75

VS-UFB201FA40

Vishay Semiconductors

Fig. 7 - Typical Reverse Recovery Time vs. dI

Fig. 8 - Typical Stored Charge vs. dI

/dt

F

/dt

F

Note

(1)

Formula used: TC = TJ - (Pd +Pd

Pd = Forward power loss = I
Pd

Revision: 29-Nov-11

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V

REV

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F(AV)

) x R

REV

thJC

x VFM at (I

Fig. 9 - Typical Reverse Recovery vs. dI

;

/D) (see fig. 6);

F(AV)

R

/dt

F

4

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Document Number: 93793

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Q

rr

0.5 I

RRM

dI

(rec)M

/dt

0.75 I

RRM

I

RRM

t

rr

t

b

t

a

I

F

dIF/dt

0

(1)

(2)

(3)

(4)

(5)

(1) dI

F

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

rr

- reverse recovery time measured
from zero crossing point of negative
going I

F

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

rr

- area under curve dened by t

rr

and I

RRM

trr x I

RRM

2

Q

rr

=

(5) dI

(rec)M

/dt - peak rate of change of

current during t

b

portion of t

rr

L = 70 μH

= 200 V

V

R

VS-UFB201FA40

Vishay Semiconductors

0.01 Ω

D.U.T.

dIF/dt

adjust

G

D

IRFP250

S

Fig. 10 - Reverse Recovery Parameter Test Circuit

Revision: 29-Nov-11

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Fig. 11 - Reverse Recovery Waveform and Definitions

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ORDERING INFORMATION TABLE

VS-UFB201FA40

Vishay Semiconductors

Device code

CIRCUIT CONFIGURATION

CIRCUIT

2 separate diodes,
parallel pin-out

CIRCUIT

CONFIGURATION CODE

VS- UF B 201 F A 40

51 32 4 6 7

1 - Vishay Semiconductors product

2 - Ultrafast rectifier

3

- Ultrafast Pt diffused

4 - Current rating (201 = 200 A)

5 - Circuit configuration (2 separate diodes, parallel pin-out)

6 - Package indicator (SOT-227 standard isolated base)

- Voltage rating (40 = 400 V)

7

CIRCUIT DRAWING

Lead Assignment

F

4

43

3

1

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95423

Packaging information www.vishay.com/doc?95425

2

1

2

Revision: 29-Nov-11

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Document Number: 93793

Legal Disclaimer Notice

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Vishay

Disclaimer

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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Revision: 12-Mar-12

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Document Number: 91000