C&H Technology VS-UFB201FA40 User Manual

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Suite 108
Minnetonka, MN 55345

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www.vishay.com

Insulated Ultrafast Rectifier Module, 200 A

SOT-227

PRODUCT SUMMARY

V

R

I

per module at TC = 86 °C 200 A

F(AV)

t

rr

Type Modules - Diode FRED Pt

400 V

40 ns

VS-UFB201FA40

Vishay Semiconductors

FEATURES

• Two fully independent diodes

• Fully insulated package

• Ultrafast, soft reverse recovery, with high junction
temperature (T

• Low forward voltage drop

• Optimized for power conversion: welding and industrial
SMPS applications

• Easy to use and parallel

• Industry standard outline

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION

The VS-UFB201FA40 insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery
current shape, together with the best overall performance,
ruggedness and reliability characteristics.

These devices are thus intended for high frequency

®

applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.

max. = 175 °C)

J

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Cathode to anode voltage V

Continuous forward current per diode I

Single pulse forward current per diode I

Maximum power dissipation per module P

RMS isolation voltage V

Maximum junction temperature T

Maximum case temperature T

Storage temperature T

Note

(1)

Maximum continuous forward current must be limited to 100 A to do not exceed the maximum temperature of power terminals.

Revision: 29-Nov-11

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

F

FSM

ISOL

STG

R

(1)

D

J

C

TC = 88 °C 120

TC = 25 °C 600

TC = 88 °C 311 W

Any terminal to case, t = 1 minute 2500 V

1

, [e-mail], [e-mail]

400 V

- 55 to 175 °C

150 °C

- 55 to 150 °C

Document Number: 93793

A

VS-UFB201FA40

www.vishay.com

ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode breakdown voltage V

BR

IR = 100 μA 400 - -

IF = 100 A - 1.33 1.59

= 100 A, TJ = 125 °C - 1.19 1.28

I

Forward voltage V

Reverse leakage current I

Junction capacitance C

FM

RM

T

F

I

= 200 A - 1.56 1.91

F

I

= 200 A, TJ = 125 °C - 1.49 1.64

F

VR = VR rated - 0.20 50 μA

T

= 175 °C, VR = VR rated - 0.40 2 mA

J

VR = 400 V - 76 - pF

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 40 -

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

rr

= 25 °C

J

T

= 125 °C - 160 -

J

TJ = 25 °C - 7 -

T

= 125 °C - 16 -

J

TJ = 25 °C - 310 -

T

= 125 °C - 1300 -

J

I

= 50 A

F

/dt = 200 A/μs

dI

F

= 200 V

V

R

Vishay Semiconductors

V

-80-

nsT

A

nC

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Junction to case, single leg conducting

Case to heatsink R

R

thJC

thCS

Flat, greased surface - 0.075 -

Weight -30- g

Mounting torque -1.3-Nm

Case style SOT-227

- - 0.56

°C/WJunction to case, both leg conducting - - 0.28

Revision: 29-Nov-11

For technical questions within your region: [e-mail]

2

, [e-mail], [e-mail]

Document Number: 93793

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000