C&H Technology VS-SA61BA60 User Manual

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www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

VS-SA61BA60

SOT-227

www.vishay.com

Vishay Semiconductors

Single Phase Fast Recovery Bridge (Power Modules), 61 A

FEATURES

• Fast recovery time characteristic

• Electrically isolated base plate

• Simplified mechanical designs, rapid assembly

• UL pending

• Excellent power/volume ratio

• Compliant to RoHS Directive 2011/65/EU

• Designed and qualified for industrial and consumer level

PRODUCT SUMMARY

I

T(AV)

Type Modules - Bridge, Fast

61 A

DESCRIPTION

The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

O

I

FSM

2

I

V

T

t

RRM

J

T

C

50 Hz 300

60 Hz 310

50 Hz 442

60 Hz 402

61 A

57 °C

A

A2s

600 V

- 55 to 150 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM

TYPE NUMBER

SA61BA60 60 600 700 10

VOLTAGE

CODE

RRM

REPETITIVE PEAK

REVERSE VOLTAGE

V

V

, MAXIMUM

RSM

NON-REPETITIVE PEAK

REVERSE VOLTAGE

V

I

RRM

AT T

MAXIMUM

MAXIMUM

J

mA

Revision: 29-Feb-12

1

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

, [e-mail], [e-mail]

Document Number: 94688

VS-SA61BA60

I

FM

t

rr

dI

R

dt

I

RM(REC)

Q

rr

t

www.vishay.com

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum DC output current
at case temperature

Maximum peak, one-cycle
non-repetitive forward current

Maximum I

Maximum I

2

t for fusing I2t

2

t for fusing I2tI2t for time tx = I2t x tx0.1  tx  10 ms, V

Value of threshold voltage V

Forward slope resistance r

Maximum forward voltage drop V

RMS isolation voltage base plate V

I

I

FSM

F(TO)

O

FM

INS

Resistive or inductive load 61 A

t = 10 ms

t = 8.3 ms 310

t = 10 ms

t = 8.3 ms 260

t = 10 ms

t = 8.3 ms 402

t = 10 ms

t = 8.3 ms 284

No voltage
reapplied

100 % V

RRM

reapplied

No voltage
reapplied

100 % V

RRM

reapplied

Initial T
T

maximum

J

TJ maximum

t

TJ = 25 °C, IFM = 30 A

= TJ maximum, IFM = 30 A

J

pk

tp = 400 μs

pk

f = 50 Hz, t = 1 s 3000

Vishay Semiconductors

57 °C

300

250

=

J

442

313

= 0 V 4.4 kA2s

RRM

0.914 V

10.5 m

1.33

1.23

A

A2s

VT

RECOVERY CHARACTERISTICS

PARAMETER

Reverse recovery time, typical t

Reverse recovery current,
typical

Reverse recovery charge,
typical

Snap factor, typical S T

Junction capacitance, typical C

SYMB

OL

rr

I

rr

Q

rr

T

TEST CONDITIONS VALUES UNITS

TJ = 25 °C, IF = 20 A, VR = 30 V,

/dt = 100 A/μs

dI

F

= 125 °C, IF = 20 A, VR = 30 V,

T

J

dI

/dt = 100 A/μs

F

TJ = 25 °C, IF = 20 A, VR = 30 V,
dI

/dt = 100 A/μs

F

= 125 °C, IF = 20 A, VR = 30 V,

T

J

/dt = 100 A/μs

dI

F

TJ = 25 °C, IF = 20 A, VR = 30 V,
dI

/dt = 100 A/μs

F

= 125 °C, IF = 20 A, VR = 30 V,

T

J

dI

/dt = 100 A/μs

F

= 25 °C 0.6 -

J

170

ns

250

10.5

16

900

nC

1970

VR = 600 V 67 pF

A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Junction and storage
temperature range

Maximum thermal resistance
junction to case per bridge

Typical thermal resistance,
case to heatsink per module

Approximate weight 30 g

Mounting torque ± 10 % Bridge to heatsink 1.3 Nm

Case style SOT-227

Revision: 29-Feb-12

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

T

J

R

, T

thJC

Stg

- 55 to 150 °C

0.30
°C/W

R

thCS

Mounting surface, smooth, flat and greased 0.05

2

Document Number: 94688

, [e-mail], [e-mail]