C&H Technology VS-SA61BA60 User Manual

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VS-SA61BA60

SOT-227

www.vishay.com

Vishay Semiconductors

Single Phase Fast Recovery Bridge (Power Modules), 61 A

FEATURES

• Fast recovery time characteristic

• Electrically isolated base plate

• Simplified mechanical designs, rapid assembly

• UL pending

• Excellent power/volume ratio

• Compliant to RoHS Directive 2011/65/EU

• Designed and qualified for industrial and consumer level

PRODUCT SUMMARY

I

T(AV)

Type Modules - Bridge, Fast

61 A

DESCRIPTION

The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

O

I

FSM

2

I

V

T

t

RRM

J

T

C

50 Hz 300

60 Hz 310

50 Hz 442

60 Hz 402

61 A

57 °C

A

A2s

600 V

- 55 to 150 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM

TYPE NUMBER

SA61BA60 60 600 700 10

VOLTAGE

CODE

RRM

REPETITIVE PEAK

REVERSE VOLTAGE

V

V

, MAXIMUM

RSM

NON-REPETITIVE PEAK

REVERSE VOLTAGE

V

I

RRM

AT T

MAXIMUM

MAXIMUM

J

mA

Revision: 29-Feb-12

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Document Number: 94688

VS-SA61BA60

I

FM

t

rr

dI

R

dt

I

RM(REC)

Q

rr

t

www.vishay.com

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum DC output current
at case temperature

Maximum peak, one-cycle
non-repetitive forward current

Maximum I

Maximum I

2

t for fusing I2t

2

t for fusing I2tI2t for time tx = I2t x tx0.1  tx  10 ms, V

Value of threshold voltage V

Forward slope resistance r

Maximum forward voltage drop V

RMS isolation voltage base plate V

I

I

FSM

F(TO)

O

FM

INS

Resistive or inductive load 61 A

t = 10 ms

t = 8.3 ms 310

t = 10 ms

t = 8.3 ms 260

t = 10 ms

t = 8.3 ms 402

t = 10 ms

t = 8.3 ms 284

No voltage
reapplied

100 % V

RRM

reapplied

No voltage
reapplied

100 % V

RRM

reapplied

Initial T
T

maximum

J

TJ maximum

t

TJ = 25 °C, IFM = 30 A

= TJ maximum, IFM = 30 A

J

pk

tp = 400 μs

pk

f = 50 Hz, t = 1 s 3000

Vishay Semiconductors

57 °C

300

250

=

J

442

313

= 0 V 4.4 kA2s

RRM

0.914 V

10.5 m

1.33

1.23

A

A2s

VT

RECOVERY CHARACTERISTICS

PARAMETER

Reverse recovery time, typical t

Reverse recovery current,
typical

Reverse recovery charge,
typical

Snap factor, typical S T

Junction capacitance, typical C

SYMB

OL

rr

I

rr

Q

rr

T

TEST CONDITIONS VALUES UNITS

TJ = 25 °C, IF = 20 A, VR = 30 V,

/dt = 100 A/μs

dI

F

= 125 °C, IF = 20 A, VR = 30 V,

T

J

dI

/dt = 100 A/μs

F

TJ = 25 °C, IF = 20 A, VR = 30 V,
dI

/dt = 100 A/μs

F

= 125 °C, IF = 20 A, VR = 30 V,

T

J

/dt = 100 A/μs

dI

F

TJ = 25 °C, IF = 20 A, VR = 30 V,
dI

/dt = 100 A/μs

F

= 125 °C, IF = 20 A, VR = 30 V,

T

J

dI

/dt = 100 A/μs

F

= 25 °C 0.6 -

J

170

ns

250

10.5

16

900

nC

1970

VR = 600 V 67 pF

A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Junction and storage
temperature range

Maximum thermal resistance
junction to case per bridge

Typical thermal resistance,
case to heatsink per module

Approximate weight 30 g

Mounting torque ± 10 % Bridge to heatsink 1.3 Nm

Case style SOT-227

Revision: 29-Feb-12

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T

J

R

, T

thJC

Stg

- 55 to 150 °C

0.30
°C/W

R

thCS

Mounting surface, smooth, flat and greased 0.05

2

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I

F(AV) -

Average Forward Current (A)

Allowable Case Temperature (°C)

40

50

60

70

80

90

100

110

120

130

140

150

0 10 20 30 40 50 60 70

180˚

(Rect)

180˚

(Sine)

VS-SA61BA60

Vishay Semiconductors

1000

100

- Instantaneous Forward Current (A)

F

I

10

TJ = 150 °C

1

0 0.5 1 1.5 2 2.5 3 3.5

V

Forward Voltage Drop (V)

FM -

T

= 25 °C

T

J

= 125 °C

J

Fig. 1 - Typical Forward Voltage Drop Characteristics

10 000

TJ = 150 °C

1000

100

10

TJ = 125 °C

T

= 25 °C

J

220

200

180

160

140

120

100

80

60

40

Average Power Loss (W)

20

0

0 10 20 30 40 50 60

I

F(AV) -

Fig. 4 - Current Rating Characteristics

180˚

(Sine)

180˚

(Rect)

Average Forward Current (A)

1

- Reverse Current (μA)

R

I

0.1
0 100 200 300 400 500 600

VR - Reverse Voltage (V)

Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage

1000

100

Junction Capacitance (pF)

-

T

C

10

10 100 1000

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

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Fig. 5 - Forward Power Loss Characteristics

3

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t

rr

(ns)

dIF/dt (A/μs)

50

100

150

200

250

300

100 1000

IF = 30 A

I

F

= 20 A

I

F

= 10 A

VR = 30 V

125 °C

25 °C

10

1

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02

0.1

Thermal Impedance (°C/W)

-

thJC

Z

0 .01

D = 0.01

Single Pulse

(Thermal Resistance)

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t

2. Peak T

tp - Square Wave Pulse Duration (μs)

Fig. 6 - Typical Forward Voltage Drop Characteristics

V

R

35

= 30 V

P

DM

= Pdm x Z

J

VS-SA61BA60

Vishay Semiconductors

t

1

t

2

/ t2

1

+ Tc

thJC

IF = 30 A

I

= 20 A

F

Fig. 7 - Typical Reverse Recovery Time vs. dI

4000

V

= 30 V

R

3500

3000

2500

(nC)

2000

rr

Q

125 °C

1500

1000

500

100 1000

= 10 A

I

F

I

= 20 A

F

dIF/dt (A/μs)

Fig. 8 - Typical Stored Charge vs. dI

I

= 30 A

F

25 °C

/dt

F

25

(A)

RR

I

125 °C

15

= 10 A

I

25 °C

5

100 1000

F

dIF/dt (A/μs)

/dt

F

Fig. 9 - Typical Reverse Recovery Current vs. dI

F

/dt

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IRFP250

D.U.T.

L = 70 μH

V

R

= 200 V

0.01 Ω

G

D

S

dIF/dt
adjust

Q

rr

0.5 I

RRM

dI

(rec)M

/dt

0.75 I

RRM

I

RRM

t

rr

t

b

t

a

I

F

dIF/dt

0

(1)

(2)

(3)

(4)

(5)

(1) dI

F

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

rr

- reverse recovery time measured
from zero crossing point of negative
going I

F

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

rr

- area under curve dened by t

rr

and I

RRM

trr x I

RRM

2

Q

rr

=

(5) dI

(rec)M

/dt - peak rate of change of

current during t

b

portion of t

rr

VS-SA61BA60

Vishay Semiconductors

Fig. 10 - Reverse Recovery Parameter Test Circuit

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Fig. 11 - Reverse Recovery Waveform and Definitions

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ORDERING INFORMATION TABLE

VS-SA61BA60

Vishay Semiconductors

Device code

SVS- A 61 B A 60

51 32 4 6 7

- Vishay Semiconductors product

1

- S = Fast recovery diode

2

- A = Present Silicon Generation

3

- Current rating (61 = 61 A)

4

- Circuit configuration:

5

B = Single phase bridge

- Package indicator:

6

A = SOT-227, standard insulated base

- Voltage rating (60 = 600 V)

7

CIRCUIT CONFIGURATION

CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING

2

Single phase bridge B

~

4

1

+

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3

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Revision: 12-Mar-12

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