C&H Technology VSKV105 User Manual
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Suite 108
Minnetonka, MN 55345
www.chtechnology.com
Phone (952) 933-6190
Fax (952) 933-6223
1-800-274-4284
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ADD-A-PAK Generation VII Power Modules
Thyristor/Thyristor, 105 A
ADD-A-PAK
PRODUCT SUMMARY
I
T(AV)
MECHANICAL DESCRIPTION
The ADD-A-PAK generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.
105 A
VSKU105.., VSKV105.. Series
Vishay High Power Products
FEATURES
• High voltage
• Industrial standard package
• UL pending
• 3500 V
• Low thermal resistance
• Totally lead (Pb)-free
• Designed and qualified for industrial level
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
• Up to 1600 V
• High surge capability
• Easy mounting on heatsink
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
isolating voltage
RMS
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
2
I
√t 200 kA2√s
V
RRM
T
Stg
T
J
Document Number: 94656 For technical questions, contact: ind-modules@vishay.com
Revision: 18-Dec-08 1
85 °C 105
165
50 Hz 2000
60 Hz 2094
50 Hz 20
60 Hz 18.26
Range 400 to 1600 V
- 40 to 130 °C
kA2s
A
www.vishay.com
VSKU105.., VSKV105.. Series
Vishay High Power Products
ADD-A-PAK Generation VII Power Modules
Thyristor/Thyristor, 105 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
, MAXIMUM
RRM
REPETITIVE PEAK
REVERSE VOLTAGE
TYPE NUMBER
VOLTAGE
CODE
V
04 400 500 400
VSK.105
08 800 900 800
12 1200 1300 1200
16 1600 1700 1600
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current I
Maximum continuous RMS on-state current I
Maximum peak, one-cycle non-repetitive
on-state current
2
Maximum I
Maximum I
t for fusing I2t
2
√t for fusing I2√t
Maximum value of threshold voltage V
Maximum value of on-state
slope resistance
Maximum on-state voltage drop V
Maximum non-repetitive rate of rise of
turned on current
Maximum holding current I
Maximum latching current I
Notes
(1)I2
t for time tx = I2√t x √t
(2)
Average power = V
(3)
16.7 % x π x IAV < I < π x I
(4)
I > π x I
AV
T(TO)
x
x I
+ rt x (I
T(AV)
AV
T(RMS)
T(AV)
T(RMS)
I
TSM
(1)
(2)
T(TO)
(2)
r
t
TM
dI/dt
H
L
2
)
V
, MAXIMUM
RSM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
180° conduction, half sine wave,
T
= 85 °C
C
V
, MAXIMUM REPETITIVE
DRM
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
105
DC 165
T
C
t = 10 ms
t = 8.3 ms 2094
t = 10 ms
t = 8.3 ms 1760
t = 10 ms
t = 8.3 ms 18.26
t = 10 ms
t = 8.3 ms 12.91
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sinusoidal
half wave,
=
initial T
J
T
maximum
J
Initial T
=
J
maximum
T
J
t = 0.1 ms to 10 ms, no voltage reapplied
T
= TJ maximum
J
Low level
High level
Low level
High level
ITM = π x I
T
J
I
TM
(3)
TJ = TJ maximum
(4)
(3)
TJ = TJ maximum
(4)
T(AV)TJ
= 25 °C 1.8 V
= 25 °C, from 0.67 V
= π x I
, Ig = 500 mA, tr < 0.5 µs, tp > 6 µs
T(AV)
DRM
,
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
78 °C
2000
1682
20
14.14
200 kA
0.98
1.12
2.7
2.34
150 A/µs
250
TJ = 25 °C, anode supply = 6 V, resistive load 400
AT 130 °C
I
I
kA
mΩ
mA
RRM,
DRM
mA
15
A
A
2
2
√s
V
s
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 94656
2 Revision: 18-Dec-08
VSKU105.., VSKV105.. Series
ADD-A-PAK Generation VII Power Modules
Vishay High Power Products
Thyristor/Thyristor, 105 A
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak gate current I
Maximum peak negative gate voltage - V
GM
G(AV)
GM
GM
TJ = - 40 °C
Maximum gate voltage required to trigger V
GT
T
= 25 °C 2.5
J
T
= 125 °C 1.7
J
Anode supply = 6 V
resistive load
TJ = - 40 °C
Maximum gate current required to trigger I
Maximum gate voltage that will not trigger V
Maximum gate current that will not trigger I
GT
GD
GD
= 25 °C 150
J
= 125 °C 80
T
J
TJ = 125 °C, rated V
TJ = 125 °C, rated V
Anode supply = 6 V
resistive load
applied 0.25 V
DRM
applied 6 mA
DRM
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak reverse and off-state
leakage current at V
RRM
, V
DRM
RMS insulation voltage V
Maximum critical rate of rise of off-state voltage dV/dt T
I
RRM,
I
DRM
TJ = 130 °C, gate open circuit 20 mA
50 Hz, 1 s 3500 V
INS
= 130 °C, linear to 0.67 V
J
DRM
12
3.0
W
3.0 A
10
4.0
V
270
mAT
1000 V/µs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Junction operating and storage
temperature range
Maximum internal thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink per module
to heatsink
Mounting torque ± 10 %
busbar 3
Approximate weight
T
, T
J
Stg
R
thJC
DC operation 0.22
- 40 to 130 °C
°C/W
R
thCS
Mounting surface flat, smooth and greased 0.1
A mounting compound is recommended and the
torque should be rechecked after a period of
4
Nm
3 hours to allow for the spread of the compound.
75 g
2.7 oz.
Case style JEDEC TO-240AA compatible
ΔR CONDUCTION PER JUNCTION
DEVICES
VSK.105.. 0.04 0.048 0.063 0.085 0.125 0.033 0.052 0.067 0.088 0.127 °C/W
Note
• Table shows the increment of thermal resistance R
SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
when devices operate at different conduction angles than DC
thJC
UNITS
Document Number: 94656 For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 18-Dec-08 3
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