C&H Technology VSKU-V56PbF User Manual
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Thyristor/Thyristor, 45/60 A
(ADD-A-PAK
VSKU/V41, 56..PbF Series
Vishay High Power Products
TM
Generation 5 Power Modules)
FEATURES
• High voltage
ADD-A-PAK
TM
PRODUCT SUMMARY
I
T(AV)
45/60 A
MECHANICAL DESCRIPTION
The Generation 5 of ADD-A-PAKTM module combine the
excellent thermal performance obtained by the usage of
direct bonded copper substrate with superior mechanical
ruggedness, thanks to the insertion of a solid copper
baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the majority
of heatsink with increased tolerance of surface roughness
and improved thermal spread.
The Generation 5 of ADD-A-PAK module is manufactured
without hard mold, eliminating in this way any possible direct
stress on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop feature
already tested and proved as reliable on other Vishay HPP
modules.
• Industrial standard package
• Thick Al metal die and double stick bonding
RoHS
COMPLIANT
• Thick copper baseplate
• UL E78996 approved
• 3500 V
isolating voltage
RMS
• Totally lead (Pb)-free
• Designed and qualified for industrial level
BENEFITS
• Up to 1600 V
• Full compatible TO-240AA
• High surge capability
• Easy mounting on heatsink
DBC insulator
•Al
203
• Heatsink grounded
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VSKU/V41 VSKU/V56 UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
2
√t 36.1 85.0 kA2√s
I
V
RRM
, T
T
J
Stg
Document Number: 94515 For technical questions, contact: ind-modules@vishay.com
Revision: 25-Apr-08 1
85 °C 45 60
70 95
50 Hz 850 1310
60 Hz 890 1370
50 Hz 3.61 8.50
60 Hz 3.30 7.82
Range 400 to 1600 V
- 40 to 125 °C
kA2s
www.vishay.com
A
VSKU/V41, 56..PbF Series
Vishay High Power Products
Thyristor/Thyristor, 45/60 A
(ADD-A-PAKTM Generation 5 Power Modules)
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
, MAXIMUM
RRM
REPETITIVE PEAK
REVERSE VOLTAGE
TYPE NUMBER
VOLTAGE
CODE
V
04 400 500 400
VSKU/V41, 56
08 800 900 800
12 1200 1300 1200
16 1600 1700 1600
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS
Maximum average on-state current I
Maximum RMS on-state current I
Maximum peak, one-cycle
non-repetitive on-state current
Maximum I
Maximum I
2
t for fusing I2t
2
√t for fusing I2√t
Maximum value of threshold voltage V
Maximum value of on-state
slope resistance
T(AV)
T(RMS)
I
TSM
T(TO)
r
t
Maximum peak on-state voltage V
Maximum non-repetitive rate of rise
of turned on current
dI/dt
Maximum holding current I
Maximum latching current I
Notes
(1)I2
t for time tx = I2√t x √t
(2)
Average power = V
(3)
16.7 % x π x IAV < I < π x I
(4)
I > π x I
AV
T(TO)
x
x I
+ rt x (I
T(AV)
AV
T(RMS)
www.vishay.com For technical questions, contact: ind-modules@vishay.com
2 Revision: 25-Apr-08
180° conduction, half sine wave, TC = 85 °C 45 60
DC 70 95
T
C
t = 10 ms
t = 8.3 ms 890 1370
t = 10 ms
t = 8.3 ms 750 1150
t = 10 ms
t = 8.3 ms 985 1520
t = 10 ms
t = 8.3 ms 3.30 7.82
t = 10 ms
t = 8.3 ms 2.33 5.53
t = 10 ms
t = 8.3 ms 4.03 9.60
(1)
t = 0.1 to 10 ms, no voltage reapplied 36.1 85.6 kA2√s
Low level
(2)
High level
Low level
(2)
High level
(3)
(4)
(3)
(4)
ITM = π x
I
TM
H
L
T(AV)
= π x
I
FM
I
F(AV)
= 25 °C, from 0.67 V
T
J
I
= π x I
TM
t
< 0.5 µs, tp > 6 µs
r
T(AV)
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
TJ = 25 °C, anode supply = 6 V, resistive load 400
2
)
V
, MAXIMUM
RSM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
V
, MAXIMUM REPETITIVE
DRM
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
I
I
AT 125 °C
VALUES
VSKU/V41 VSKU/V56
82 80 °C
No voltage
reapplied
100 % V
RRM
Sinusoidal half wave,
initial T
= TJ maximum
J
850 1310
715 1100
reapplied
= 25 °C,
T
J
940 1450
no voltage reapplied
No voltage
reapplied
100 % V
RRM
Initial T
= TJ maximum
J
3.61 8.56
2.56 6.05
reapplied
= 25 °C,
T
J
4.42 10.05
no voltage reapplied
0.88 0.85
TJ = TJ maximum
0.91 0.88
5.90 3.53
5.74 3.41
TJ = 25 °C 1.81 1.54 V
,
, Ig = 500 mA,
DRM
150 A/µs
200
Document Number: 94515
RRM,
DRM
mA
15
UNITS
A
A
kA
V
mΩ
mA
2
s
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