C&H Technology VSKU-V105PbF User Manual
6121 Baker Road,
Suite 108
Minnetonka, MN 55345
www.chtechnology.com
Phone (952) 933-6190
Fax (952) 933-6223
1-800-274-4284
Thank you for downloading this document from C&H Technology, Inc.
Please contact the C&H Technology team for the following questions -
Technical
Application
Assembly
Availability
Pricing
Phone – 1-800-274-4284
E-Mail – sales@chtechnology.com
www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com
Thyristor/Thyristor, 105 A
(ADD-A-PAK
VSKU/V105..PbF Series
Vishay High Power Products
TM
Generation 5 Power Modules)
FEATURES
• High voltage
ADD-A-PAK
TM
PRODUCT SUMMARY
I
T(AV)
105 A
MECHANICAL DESCRIPTION
The Generation 5 of ADD-A-PAKTM module combines the
excellent thermal performance obtained by the usage of
direct bonded copper substrate with superior mechanical
ruggedness, thanks to the insertion of a solid copper
baseplate at the bottom side of the device. The Cu baseplate
allows an easier mounting on the majority of heatsink with
increased tolerance of surface roughness and improved
thermal spread. The Generation 5 of AAP modules is
manufactured without hard mold, eliminating in this way any
possible direct stress on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop feature
already tested and proved as reliable on other Vishay HPP
modules.
• Industrial standard package
• Thick Al metal die and double stick bonding
RoHS
COMPLIANT
• Thick copper baseplate
• UL E78996 approved
• 3500 V
isolating voltage
RMS
• Totally lead (Pb)-free
• Designed and qualified for industrial level
BENEFITS
• Up to 1600 V
• Full compatible TO-240AA
• High surge capability
• Easy mounting on heatsink
DBC insulator
•Al
203
• Heatsink grounded
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
t
I
2
I
√t 159.1 kA2√s
V
RRM
T
Stg
T
J
Document Number: 94423 For technical questions, contact: ind-modules@vishay.com
Revision: 24-Apr-08 1
85 °C 105
165
50 Hz 1785
60 Hz 1870
50 Hz 15.91
60 Hz 14.52
Range 400 to 1600 V
- 40 to 125
- 40 to 130
kA2s
A
°C
www.vishay.com
VSKU/V105..PbF Series
Vishay High Power Products
Thyristor/Thyristor, 105 A
(ADD-A-PAKTM Generation 5 Power Modules)
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
, MAXIMUM
RRM
REPETITIVE PEAK
REVERSE VOLTAGE
TYPE NUMBER
VOLTAGE
CODE
V
04 400 500 400
VSKU/V105
08 800 900 800
12 1200 1300 1200
16 1600 1700 1600
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current I
Maximum continuous RMS on-state current I
Maximum peak, one-cycle
non-repetitive on-state current
2
Maximum I
Maximum I
t for fusing I2t
2
√t for fusing I2√t
Maximum value or threshold voltage V
Maximum value of on-state
slope resistance
Maximum peak on-state or forward voltage
Maximum non-repetitive rate of
rise of turned on current
Maximum holding current I
Maximum latching current I
Notes
(1)I2
t for time tx = I2√t x √t
(2)
Average power = V
(3)
16.7 % x π x IAV < I < π x I
(4)
I > π x I
AV
T(TO)
x
x I
+ rt x (I
T(AV)
AV
T(RMS)
T(AV)
T(RMS)
I
TSM
T(TO)
r
V
V
dI/dt
2
)
(1)
(2)
(2)
t
TM
FM
H
L
V
, MAXIMUM
RSM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
180° conduction, half sine wave,
T
= 85 °C
C
V
, MAXIMUM REPETITIVE
DRM
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
105
DC 165
T
C
t = 10 ms
t = 8.3 ms 1870
t = 10 ms
t = 8.3 ms 1570
t = 10 ms
t = 8.3 ms 2100
t = 10 ms
t = 8.3 ms 14.52
t = 10 ms
t = 8.3 ms 10.27
t = 10 ms
t = 8.3 ms 18.30
No voltage
reapplied
100 % V
reapplied
= 25 °C
T
J
RRM
Sinusoidal
half wave,
initial T
maximum
no voltage reapplied
No voltage
reapplied
100 % V
RRM
Initial T
maximum
reapplied
T
= 25 °C
J
no voltage reapplied
= T
J
= T
J
J
J
t = 0.1 to 10 ms, no voltage reapplied
T
= TJ maximum
J
Low level
High level
Low level
High level
ITM = π x I
IFM = π x I
TJ = 25 °C, from 0.67 V
I
TM
= π x I
(3)
TJ = TJ maximum
(4)
(3)
TJ = TJ maximum
(4)
T(AV)
TJ = 25 °C 1.64 V
F(AV)
,
, Ig = 500 mA, tr < 0.5 µs, tp > 6 µs
T(AV)
DRM
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
77 °C
1785
1500
2000
15.91
11.25
20.00
159.1 kA
0.80
0.85
2.37
2.25
150 A/µs
200
TJ = 25 °C, anode supply = 6 V, resistive load 400
AT 130 °C
I
kA
mΩ
mA
RRM
I
DRM
mA
20
A
A
2
V
,
2
s
√s
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 94423
2 Revision: 24-Apr-08
Loading...