C&H Technology VSKU-V105PbF User Manual

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Thyristor/Thyristor, 105 A

(ADD-A-PAK

VSKU/V105..PbF Series

Vishay High Power Products

TM

Generation 5 Power Modules)

FEATURES

• High voltage

ADD-A-PAK

TM

PRODUCT SUMMARY

I

T(AV)

105 A

MECHANICAL DESCRIPTION

The Generation 5 of ADD-A-PAKTM module combines the
excellent thermal performance obtained by the usage of
direct bonded copper substrate with superior mechanical
ruggedness, thanks to the insertion of a solid copper
baseplate at the bottom side of the device. The Cu baseplate
allows an easier mounting on the majority of heatsink with
increased tolerance of surface roughness and improved
thermal spread. The Generation 5 of AAP modules is
manufactured without hard mold, eliminating in this way any
possible direct stress on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop feature
already tested and proved as reliable on other Vishay HPP
modules.

• Industrial standard package

• Thick Al metal die and double stick bonding

RoHS

COMPLIANT

• Thick copper baseplate

• UL E78996 approved

• 3500 V

isolating voltage

RMS

• Totally lead (Pb)-free

• Designed and qualified for industrial level

BENEFITS

• Up to 1600 V

• Full compatible TO-240AA

• High surge capability

• Easy mounting on heatsink

DBC insulator

•Al

203

• Heatsink grounded

ELECTRICAL DESCRIPTION

These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

t

I

2

I

√t 159.1 kA2√s

V

RRM

T

Stg

T

J

Document Number: 94423 For technical questions, contact: [e-mail]
Revision: 24-Apr-08 1

85 °C 105

165

50 Hz 1785

60 Hz 1870

50 Hz 15.91

60 Hz 14.52

Range 400 to 1600 V

- 40 to 125

- 40 to 130

kA2s

A

°C

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VSKU/V105..PbF Series

Vishay High Power Products

Thyristor/Thyristor, 105 A

(ADD-A-PAKTM Generation 5 Power Modules)

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM

RRM

REPETITIVE PEAK

REVERSE VOLTAGE

TYPE NUMBER

VOLTAGE

CODE

V

04 400 500 400

VSKU/V105

08 800 900 800

12 1200 1300 1200

16 1600 1700 1600

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current I

Maximum continuous RMS on-state current I

Maximum peak, one-cycle
non-repetitive on-state current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t

Maximum value or threshold voltage V

Maximum value of on-state
slope resistance

Maximum peak on-state or forward voltage

Maximum non-repetitive rate of
rise of turned on current

Maximum holding current I

Maximum latching current I

Notes

(1)I2

t for time tx = I2√t x √t

(2)

Average power = V

(3)

16.7 % x π x IAV < I < π x I

(4)

I > π x I

AV

T(TO)

x

x I

+ rt x (I

T(AV)

AV

T(RMS)

T(AV)

T(RMS)

I

TSM

T(TO)

r

V

V

dI/dt

2

)

(1)

(2)

(2)

t

TM

FM

H

L

V

, MAXIMUM

RSM

NON-REPETITIVE PEAK

REVERSE VOLTAGE

V

180° conduction, half sine wave,
T

= 85 °C

C

V

, MAXIMUM REPETITIVE

DRM

PEAK OFF-STATE VOLTAGE,

GATE OPEN CIRCUIT

V

105

DC 165

T

C

t = 10 ms

t = 8.3 ms 1870

t = 10 ms

t = 8.3 ms 1570

t = 10 ms

t = 8.3 ms 2100

t = 10 ms

t = 8.3 ms 14.52

t = 10 ms

t = 8.3 ms 10.27

t = 10 ms

t = 8.3 ms 18.30

No voltage
reapplied

100 % V
reapplied

= 25 °C

T

J

RRM

Sinusoidal
half wave,
initial T
maximum

no voltage reapplied

No voltage
reapplied

100 % V

RRM

Initial T
maximum

reapplied

T

= 25 °C

J

no voltage reapplied

= T

J

= T

J

J

J

t = 0.1 to 10 ms, no voltage reapplied
T

= TJ maximum

J

Low level

High level

Low level

High level

ITM = π x I

IFM = π x I

TJ = 25 °C, from 0.67 V
I

TM

= π x I

(3)

TJ = TJ maximum

(4)

(3)

TJ = TJ maximum

(4)

T(AV)

TJ = 25 °C 1.64 V

F(AV)

,

, Ig = 500 mA, tr < 0.5 µs, tp > 6 µs

T(AV)

DRM

TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit

77 °C

1785

1500

2000

15.91

11.25

20.00

159.1 kA

0.80

0.85

2.37

2.25

150 A/µs

200

TJ = 25 °C, anode supply = 6 V, resistive load 400

AT 130 °C

I

kA

mΩ

mA

RRM

I

DRM

mA

20

A

A

2

V

,

2

s

√s

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94423

2 Revision: 24-Apr-08

VSKU/V105..PbF Series

Thyristor/Thyristor, 105 A

Vishay High Power Products

(ADD-A-PAKTM Generation 5 Power Modules)

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak gate current I

Maximum peak negative gate voltage - V

GM

G(AV)

GM

GM

TJ = - 40 °C

Maximum gate voltage required to trigger V

GT

T

= 25 °C 2.5

J

T

= 125 °C 1.7

J

Anode supply = 6 V
resistive load

TJ = - 40 °C

Maximum gate current required to trigger I

Maximum gate voltage that will not trigger V

Maximum gate current that will not trigger I

GT

GD

T

GD

TJ = 125 °C, rated V

= 25 °C 150

J

= 125 °C 80

J

Anode supply = 6 V
resistive load

applied

DRM

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

I

Maximum peak reverse and off-state leakage
current at V

RRM

, V

DRM

RMS insulation voltage V

Maximum critical rate of rise of off-state voltage dV/dt

Note

(1)

Available with dV/dt = 1000 V/µs, to complete code add S90 i.e. VSKU105/16AS90

RRM

I

DRM

,

TJ = 130 °C, gate open circuit 20 mA

50 Hz, circuit to base, all terminals shorted

INS

(1)

TJ = 130 °C, linear to 0.67 V

, gate open circuit 500 V/µs

DRM

12

3

3A

10

4.0

270

0.25 V

6mA

2500 (1 min)

3500 (1 s)

W

V

mAT

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Junction operating temperature range T

Storage temperature range T

Maximum internal thermal resistance,
junction to case per module

R

Typical thermal resistance, case to heatsink R

to heatsink

Mounting torque ± 10 %

busbar 3

Approximate weight

J

Stg

thJC

thCS

DC operation 0.135

Mounting surface flat, smooth and greased 0.1

A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow for the spread of the compound.

- 40 to 130

- 40 to 125

°C

K/W

5

Nm

110 g

4oz.

Case style JEDEC TO-240AA

ΔR CONDUCTION PER JUNCTION

DEVICES

VSKU/V105 0.04 0.05 0.06 0.08 0.12 0.03 0.05 0.06 0.08 0.12 °C/W

Note

• Table shows the increment of thermal resistance R

Document Number: 94423 For technical questions, contact: [e-mail]
Revision: 24-Apr-08 3

SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION

180° 120° 90° 60° 30° 180° 120° 90° 60° 30°

when devices operate at different conduction angles than DC

thJC

UNITS

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VSKU/V105..PbF Series

Vishay High Power Products

130

120

110

100

90

80

70

Maximum Allowab le Case Temperature (°C)

020406080100120

Average On-state Current ( A)

Fig. 1 - Current Ratings Characteristics

130

120

110

100

90

80

70

Maximum Allowable Case Tem perature (°C)

0 20406080100120140160180

Average On-state Current (A)

Fig. 2 - Current Ratings Characteristics

VSK. 105.. Serie s
R (DC) = 0.27 K/W

thJC

30°

60°

VSK.105.. Se ries
R (DC) = 0.27 K/ W

30°

60°

90°

120°

Cond uction Angle

90°

120°

thJC

Cond uction Period

180°

DC

Thyristor/Thyristor, 105 A

(ADD-A-PAKTM Generation 5 Power Modules)

200

DC

180

180°
120°

160

90°
60°

140

30°

120

RM S Li m i t

100

80

60

40

180°

20

0

Maximum Average On-state Power Loss (W)

0 20406080100120140160180

Average On-state Current (A)

Fig. 4 - On-State Power Loss Characteristics

1600

At Any Ra ted Loa d Condition And With

Rated V Applied Following Surge.

1500

1400

1300

1200

1100

1000

900

VSK.105.. Se rie s

800

Per J un ct io n

700

Peak Half Sine Wave On-state Current (A)

110100

Number Of Eq ua l Amp litude Half Cycle Current Pulses (N)

RRM

Fig. 5 - Maximum Non-Repetitive Surge Current

Conduction Period

VSK.105.. Se ries
Pe r Ju n ct io n
T = 1 30 ° C

J

Init ial T = 130°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

160

140

120

100

80

60

40

20

0

Maximum Average On-state Power Loss (W)

180°
120°

90°
60°
30°

RM S Li m i t

Cond uction Angle

VSK.105.. Serie s
Pe r Ju nc t io n
T = 130°C

J

0 20406080100120

Average On-state Current (A)

Fig. 3 - On-State Power Loss Characteristics

1800

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conduc tion May Not Be Ma intained .

1600

1400

1200

1000

800

VSK.105.. Se ries
Per Junct ion

600

Peak Ha lf Sine Wave On-st at e Current (A)

0.01 0.1 1

Pulse Train Dura tion (s)

Init ia l T = 130°C

No Vo lta ge Reap p lied
Ra t e d V Re a p p l ie d

J

RRM

Fig. 6 - Maximum Non-Repetitive Surge Current

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94423

4 Revision: 24-Apr-08

VSKU/V105..PbF Series

Thyristor/Thyristor, 105 A

(ADD-A-PAKTM Generation 5 Power Modules)

600

500

400

180°

(Sine)

180°

(Re ct )

300

200

2 x VSK.105.. Se ries

100

Maximum Total Pow er Loss (W)

0

04080120160200

Si n g l e Ph a se Br id g e

Connected

T = 1 30 °C

J

Total Output Current (A)

Fig. 7 - On-State Power Loss Characteristics (Single Phase Bridge VSKU + VSKV)

900

800

700

600

I

o

500

400

300

200

Maximum Tot al Pow er Lo ss (W)

100

0

0 50 100 150 200 250 300 350 400 450

Total Output Current (A)

60°

(Rec t)

3 x VSK.105.. Serie s

6-Pulse Midpoint

Connection Bridge

T = 130°C

J

R

t

h

S

A

=

0

.

1

K

/

W

0

.

2

K

0.
3

K

/

0

.

5

K

0

.

7

K

1

K

/

W

2

K

/

W

­D

e

l

/

W

W

/

W

/

W

t

a

R

020406080100120140

Maximum Allowable Ambient Temperature (°C)

R

t

h

S

A

=

0

.

1

K

/

W

­D

e

l

t

0

.

2

K/

W

0

.

3

K

/

W

0

.

5

K

/

W

1

K

/

W

a

R

020406080100120140

Maximum Allowable Ambient Temperature (°C)

Vishay High Power Products

Fig. 8 - On-State Power Loss Characteristics

1000

100

T = 2 5° C

J

T = 13 0 ° C

10

Insta nt ane ous On-sta te Curre nt (A)

1

0 0.5 1 1.5 2 2.5 3 3.5

J

VSK.105.. Series
Pe r J un c t io n

Instantaneous On-state Voltage (V)

Fig. 9 - On-State Voltage Drop Characteristics

Document Number: 94423 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 24-Apr-08 5

VSKU/V105..PbF Series

Vishay High Power Products

700

VSK.105.. Se ri e s
T = 1 25 ° C

600

J

500

400

300

200

100

10 20 30 40 50 60 70 80 90 100

Ra te Of Fall Of On-stat e Curre nt - d i/d t (A/ µs)

Maximum Re verse Rec overy Charge - Q rr (µC)

Fig. 10 - Current Ratings Characteristics Fig. 11 - Current Ratings Characteristics

thJC

I = 200 A

TM

100 A

1

Steady State Value:

R = 0.27 K/W

thJC

(DC Operation)

Thyristor/Thyristor, 105 A

(ADD-A-PAKTM Generation 5 Power Modules)

140

VSK.105.. Se rie s
T = 1 25 ° C

J

120

100

50 A

20 A

10 A

80

60

40

20

Ma ximum Reverse Rec ove ry Current - Irr (A)

10 20 30 40 50 60 70 80 90 100

Rate Of Fall Of Forward Current - di/dt (A/µs)

I = 200 A

TM

100 A

50 A

20 A

10 A

0.1

VSK.105.. Se rie s
Per Junction

0.01

Tr a n si e n t Th e rm a l Im p e d a n c e Z ( K / W )

0.001 0.01 0.1 1 10

Sq uare Wav e Pulse Du rat ion (s)

Fig. 12 - Thermal Impedance Z

100

Rectangular gate pulse
a)Recommended load line for

rated di/d t: 20 V, 20 ohm s
tr = 0.5 µs, tp >= 6 µs

b)Recommended load line for

<= 30% rat ed di/ dt : 15 V, 40 ohms
tr = 1 µs, tp >= 6 µs

10

1

Instantaneous Gate Voltage (V)

VGD

IGD

0.1

0.001 0.01 0.1 1 10 100 1000

(a)

(b)

TJ = - 4 0 ° C

TJ = 25 °C

T
J = 125 °C

VSK.105.. Serie s

Insta nt an eous Ga te Curre nt (A)

Characteristics

thJC

(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, t p = 1 ms
(3) PGM = 30 W, t p = 2 ms
(4) PGM = 12 W, t p = 5 ms

(3)

(4)

Frequency Limited by PG(AV)

(2) (1)

Fig. 13 - Gate Characteristics

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Document Number: 94423

6 Revision: 24-Apr-08

VSKU/V105..PbF Series

Thyristor/Thyristor, 105 A

(ADD-A-PAKTM Generation 5 Power Modules)

ORDERING INFORMATION TABLE

Device code

VSK U 105 / 16 S90 P

1 - Module type

2 - Circuit configuration (see end of datasheet)

3

- Current code

4 - Voltage code (see Voltage Ratings table)

5 - dV/dt code: S90 = dV/dt 1000 V/µs

6 - P = Lead (Pb)-free

(1)

Available with no auxiliary cathode

(for details see dimensions - link at the end of datasheet)

To specify change: 105 to 106

e.g.: VSKU106/16P etc.

Vishay High Power Products

51324

(1)

No letter = dV/dt 500 V/µs

6

Note

• To order the optional hardware go to www.vishay.com/doc?95172

CIRCUIT CONFIGURATION

G1
(4)K1(5)

VSKV

(1)

(2)

(3)

-

+

+

K2
(7)G2(6)

VSKU

(1)

+

-

(2)

-

(3)

G1

(4)K1(5)K2(7)G2(6)

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95087

Document Number: 94423 For technical questions, contact: [e-mail]
Revision: 24-Apr-08 7

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