C&H Technology VSKT570-18PbF User Manual
6121 Baker Road,
Suite 108
Minnetonka, MN 55345
www.chtechnology.com
Phone (952) 933-6190
Fax (952) 933-6223
1-800-274-4284
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Phone – 1-800-274-4284
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www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES
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www.chtechnology.com
(SUPER MAGN-A-PAK Power Modules), 570 A
SUPER MAGN-A-PAK
PRODUCT SUMMARY
I
T(AV)
Thyristor/Thyristor
FEATURES
• High current capability
• High surge capability
• Industrial standard package
• 3000 V
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• Motor starters
• DC motor controls - AC motor controls
• Uninterruptable power supplies
570 A
VSKT570-18PbF
Vishay Semiconductors
isolating voltage with non-toxic substrate
RMS
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
2
I
t 15 910 kA2s
V
RRM
T
Stg
T
J
TC = 74 °C 570
TC = 74 °C 895
50 Hz 17 800
60 Hz 18 700
50 Hz 1591
60 Hz 1452
1800 V
Range - 40 to 135
Range - 40 to 135
A
kA2s
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
TYPE NUMBER
VSKT570-18PbF 18 1800 1900 120
VOLTAGE
CODE
RRM/VDRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
RRM/IDRM
AT T
= TJ MAXIMUM
J
MAXIMUM
mA
Document Number: 93281 For technical questions, contact: indmodules@vishay.com
Revision: 05-May-11 1
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
www.vishay.com/doc?91000
www.vishay.com
VSKT570-18PbF
Vishay Semiconductors
Thyristor/Thyristor
(SUPER MAGN-A-PAK Power Modules), 570 A
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
Maximum RMS on-state current I
Maximum peak, one-cycle,
T(RMS)
I
non-repetitive on-state surge current
2
Maximum I
Maximum I
t for fusing I2t
2
t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 15 910 kA2s
Low level value or threshold voltage V
High level value of threshold voltage V
Low level value on-state slope resistance r
High level value on-state slope resistance r
Maximum on-state voltage drop V
Maximum holding current I
Maximum latching current I
I
T(AV)
180° conduction, half sine wave
180° conduction, half sine wave at TC = 74 °C 895 A
t = 10 ms
TSM,
I
FSM
t = 8.3 ms 18.7
t = 10 ms
t = 8.3 ms 15.7
t = 10 ms
t = 8.3 ms 1452
t = 10 ms
t = 8.3 ms 1027
T(TO)1
T(TO)2
(16.7 % x x I
(I > x I
(16.7 % x x I
t1
(I > x I
t2
Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse 1.50 V
TM
H
TJ = 25 °C, anode supply 12 V resistive load
L
No voltage
reapplied
100 % V
reapplied
RRM
Sinusoidal
half wave,
No voltage
reapplied
100 % V
RRM
initial T
= TJ maximum
J
reapplied
< I < x I
T(AV)
), TJ = TJ maximum 0.97
T(AV)
< I < x I
T(AV)
), TJ = TJ maximum 0.362
T(AV)
), TJ = TJ maximum 0.864
T(AV)
), TJ = TJ maximum 0.411
T(AV)
570 A
74 °C
17.8
15.0
1591
1125
500
1000
kA
m
mA
kA
2
s
V
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum rate of rise of turned-on current dI/dt T
Typical delay time t
Typical turn-off time t
d
q
= TJ maximum, ITM = 400 A, V
J
applied 1000 A/μs
DRM
Gate current 1 A, dIg/dt = 1 A/μs
= 0.67 % V
V
d
I
= 750 A; TJ = TJ maximum, dI/dt = - 60 A/μs,
TM
V
= 50 V, dV/dt = 20 V/μs, gate 0 V 100
R
, TJ = 25 °C
DRM
2.0
μs
200
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise
of off-state voltage
RMS insulation voltage V
Maximum peak reverse and
off-state leakage current
dV/dt T
INS
I
RRM
I
DRM
= TJ maximum, linear to VD = 80 % V
J
DRM
1000 V/μs
t = 1 s 3000 V
,
TJ = TJ maximum, rated V
DRM/VRRM
applied 120 mA
www.vishay.com For technical questions, contact: indmodules@vishay.com
Document Number: 93281
2 Revision: 05-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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