C&H Technology VSKT570-18PbF User Manual

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(SUPER MAGN-A-PAK Power Modules), 570 A

SUPER MAGN-A-PAK

PRODUCT SUMMARY

I

T(AV)

Thyristor/Thyristor

FEATURES

• High current capability

• High surge capability

• Industrial standard package

• 3000 V

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• Motor starters

• DC motor controls - AC motor controls

• Uninterruptable power supplies

570 A

VSKT570-18PbF

Vishay Semiconductors

isolating voltage with non-toxic substrate

RMS

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

2

I

t 15 910 kA2s

V

RRM

T

Stg

T

J

TC = 74 °C 570

TC = 74 °C 895

50 Hz 17 800

60 Hz 18 700

50 Hz 1591

60 Hz 1452

1800 V

Range - 40 to 135

Range - 40 to 135

A

kA2s

°C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

TYPE NUMBER

VSKT570-18PbF 18 1800 1900 120

VOLTAGE

CODE

RRM/VDRM

, MAXIMUM REPETITIVE

PEAK REVERSE VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM/IDRM

AT T

= TJ MAXIMUM

J

MAXIMUM

mA

Document Number: 93281 For technical questions, contact: [e-mail]
Revision: 05-May-11 1

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This document is subject to change without notice.

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VSKT570-18PbF

Vishay Semiconductors

Thyristor/Thyristor

(SUPER MAGN-A-PAK Power Modules), 570 A

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

Maximum peak, one-cycle,

T(RMS)

I

non-repetitive on-state surge current

2

Maximum I

Maximum I

t for fusing I2t

2

t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 15 910 kA2s

Low level value or threshold voltage V

High level value of threshold voltage V

Low level value on-state slope resistance r

High level value on-state slope resistance r

Maximum on-state voltage drop V

Maximum holding current I

Maximum latching current I

I

T(AV)

180° conduction, half sine wave

180° conduction, half sine wave at TC = 74 °C 895 A

t = 10 ms

TSM,

I

FSM

t = 8.3 ms 18.7

t = 10 ms

t = 8.3 ms 15.7

t = 10 ms

t = 8.3 ms 1452

t = 10 ms

t = 8.3 ms 1027

T(TO)1

T(TO)2

(16.7 % x  x I
(I >  x I

(16.7 % x  x I

t1

(I >  x I

t2

Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse 1.50 V

TM

H

TJ = 25 °C, anode supply 12 V resistive load

L

No voltage
reapplied

100 % V
reapplied

RRM

Sinusoidal
half wave,

No voltage
reapplied

100 % V

RRM

initial T

= TJ maximum

J

reapplied

< I <  x I

T(AV)

), TJ = TJ maximum 0.97

T(AV)

< I <  x I

T(AV)

), TJ = TJ maximum 0.362

T(AV)

), TJ = TJ maximum 0.864

T(AV)

), TJ = TJ maximum 0.411

T(AV)

570 A

74 °C

17.8

15.0

1591

1125

500

1000

kA

m

mA

kA

2

s

V

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum rate of rise of turned-on current dI/dt T

Typical delay time t

Typical turn-off time t

d

q

= TJ maximum, ITM = 400 A, V

J

applied 1000 A/μs

DRM

Gate current 1 A, dIg/dt = 1 A/μs

= 0.67 % V

V

d

I

= 750 A; TJ = TJ maximum, dI/dt = - 60 A/μs,

TM

V

= 50 V, dV/dt = 20 V/μs, gate 0 V 100 

R

, TJ = 25 °C

DRM

2.0

μs

200

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise
of off-state voltage

RMS insulation voltage V

Maximum peak reverse and
off-state leakage current

dV/dt T

INS

I

RRM

I

DRM

= TJ maximum, linear to VD = 80 % V

J

DRM

1000 V/μs

t = 1 s 3000 V

,

TJ = TJ maximum, rated V

DRM/VRRM

applied 120 mA

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Document Number: 93281

2 Revision: 05-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

VSKT570-18PbF

Thyristor/Thyristor

Vishay Semiconductors

(SUPER MAGN-A-PAK Power Modules), 570 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum peak average gate power P

Maximum peak positive gate current +I

Maximum peak positive gate voltage +V

Maximum peak negative gate voltage -V

Maximum DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GM

G(AV)

GM

GM

GT

GT

GD

GD

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to case per junction

Maximum thermal resistance,
case to heatsink

SMAP to heatsink

Mounting torque ± 10 %

busbar to SMAP 12-15

R

R

T

Stg

thJC

thC-hs

TJ = TJ maximum, tp  5 ms 10

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

3.0 A

TJ = TJ maximum, tp  5 ms

GM

5.0

TJ = 25 °C, Vak 12 V

TJ = TJ maximum 10 mA

J

DC operation 0.065

A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.

200 mA

3.0 V

0.25 V

- 40 to 135

- 40 to 135

0.02

6-8

20

W

V

°C

K/W

Nm

Approximate weight 1500 g

Case style See dimensions (link at the end of datasheet) SUPER MAGN-A-PAK

R

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

Note

• Table shows the increment of thermal resistance R

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CONDUCTION

thJC

180° 0.009 0.006

120° 0.011 0.011

90° 0.014 0.015

60° 0.021 0.022

30° 0.037 0.038

when devices operate at different conduction angles than DC

thJC

This document is subject to change without notice.

T

= TJ maximum K/W

J

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VSKT570-18PbF

Maximum Allowable Case

Temperature (°C)

Average On-State Current (A)

200 300 600

700

0

140

130

120

110

100

90

80

70

60

50

180°
120°

90°
60°
30°

Conduction angle

Ø

100 400 500

VSKT570... Series
R

thJC

= 0.065 K/W

Maximum Allowable Case

Temperature (°C)

Average On-State Current (A)

200 300 800

900

0

140

130

120

110

100

90

80

70

60

50

100 400 600

180°
120°

90°
60°
30°

VSKT570... Series
R

thJC

= 0.065 K/W

Ø

Conduction period

700500

DC

Maximum Average On-State

Power Loss (W)

Average On-State Current (A)

100 200 300 400 500

600

0

1000

700

400

100

800

500

200

900

600

300

0

180°
120°

90°
60°
30°

RMS limit

Conduction angle

Ø

VSKT570... Series

T

J

= 135 °C

Maximum Average On-State

Power Loss (W)

Average On-State Current (A)

100 200 300 400 600

900

0

1200

400

800

200

600

0

180°
120°

90°
60°
30°

RMS limit

VSKT570... Series

T

J

= 135 °C

1000

500 700 800

DC

Conduction period

Ø

Peak Half Sine Wave On-State Current (A)

Number of Equal Amplitude Half

Cycle Current Pulses (N)

10

100

1

16 000

15 000

14 000

13 000

12 000

11 000

10 000

9000

8000

7000

VSKT570... Series

per junction

At any rated load condition and with

rated V

RRM

applied following surge.

Initial T

J

= 135 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

Peak Half Sine Wave On-State Current (A)

Pulse Train Duration (s)

0.1 1

0.01

18 000

6000

8000

10 000

12 000

14 000

16 000

Maximum non-repetitive surge current

versus pulse train duration. Control

of conduction may not be maintained.

Initial T

J

= 135 °C

No voltage reapplied

Rated V

RRM

reapplied

VSKT570... Series

per junction

Vishay Semiconductors

Fig. 1 - Current Ratings Characteristics

Thyristor/Thyristor

(SUPER MAGN-A-PAK Power Modules), 570 A

Fig. 4 - On-State Power Loss Characteristics

Fig. 2 - Current Ratings Characteristics

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Fig. 3 - On-State Power Loss Characteristics

This document is subject to change without notice.

Fig. 5 - Maximum Non-Repetitive Surge Current

Fig. 6 - Maximum Non-Repetitive Surge Current

Document Number: 93281

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Maximum Total On-State

Power Loss (W)

Maximum Allowable Ambient

Temperature (°C)

20 40 60 80 100 120

0

900

800

700

500

500

400

300

200

100

0

R

thSA

= 0.07 K/W

0.09 K/W

0.2 K/W

0.12 K/W

0.3 K/W

0.4 K/W

0.5 K/W

0.6 K/W

Instantaneous On-State Current (A)

Instantaneous On-State Voltage (V)

1.0 1.5 2.0

5.0

0.5

10 000

1000

100

2.5 3.0 3.5 4.0 4.5

VSKT570... Series

per junction

0.1

1

10

100

0.001

Instantaneous Gate Current (A)

Instantaneous Gate Voltage (V)

0.01 0.1 1 10 100 1000

V

GD

I

GD

T

J

= 40 °C

T

J

= 25 °C

T

J

= 130 °C

(b)

(a)

Frequency limited by P

G(AV)

(1)

(2)

(3) (4)

Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω;
t

r

≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
t

r

≤ 1 µs

(1) PGM = 10 W, tp = 4 ms
(2) P

GM

= 20 W, tp = 2 ms

(3) P

GM

= 40 W, tp = 1 ms

(4) P

GM

= 60 W, tp = 0.66 ms

VSK.570... Series

VSKT570-18PbF

900

800

700

600

Conduction angle

500

400

300

Power Loss (W)

200

Maximum Total On-State

100

0

0

Ø

Ø

100 200 300 400 500 600 900

Total RMS Output Current (A)

Thyristor/Thyristor

(SUPER MAGN-A-PAK Power Modules), 570 A

180°
120°

90°
60°
30°

VSKT570... Series

per module

= 135 °C

T

J

700 800

Fig. 7 - On-State Power Loss Characteristics

0.1

VSKT570... Series

per junction

Vishay Semiconductors

Fig. 8 - On-State Voltage Drop Characteristics Fig. 9 - Thermal Impedance Z

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Fig. 10 - Gate Characteristics

This document is subject to change without notice.

0.01

- Transient Thermal
Impedance (K/W)

thJC

Z

0.001

0.001 0.01 0.1 1 10

Steady state value

= 0.065 K/W

R

thJC

(DC operation)

Square Wave Pulse Duration (s)

Characteristics

thJC

www.vishay.com/doc?91000

100

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VSKT570-18PbF

Vishay Semiconductors

(SUPER MAGN-A-PAK Power Modules), 570 A

ORDERING INFORMATION TABLE

Device code

CIRCUIT CONFIGURATION

VSK T 570 - 18 PbF

1 - Module type

2

3 - Current rating

4 - Voltage code x 100 = V

5 - Lead (Pb)-free

Thyristor/Thyristor

- Circuit configuration (see below)

RRM

VSKT

1

~

51 32 4

+

2

-

3

7 (K2)4 (K1)

6 (G2)

5 (G1)

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95283

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6 Revision: 05-May-11

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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Document Number: 93281

www.vishay.com/doc?91000

Super MAGN-A-PAK Thyristor/Diode

52 (2.05)

60.0 (2.36)

48.0 (1.89)

31.0

(1.22)

50.0

(1.97)

44.0

(1.73)

M10

Fast-on tabs

2.8 x 0.8 (0.11 x 0.03)

20.1
(0.78)

36.4 (1.14) 4.5 (0.20)

54

6

5, 6 = Gate
4, 7 = Cathode

7

28.0
(1.10)

26.0

(0.98)

26.0

(0.98)

112.0 (4.41)

124.0 (4.88)

149.0 (5.67)

1.0 (0.039)

32

1

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay Semiconductors

Document Number: 95283 For technical questions, contact: [e-mail]
Revision: 20-Mar-08 1

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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12

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Document Number: 91000