C&H Technology VSKT320PbF User Manual

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MAGN-A-PAK

(MAGN-A-PAK Power Modules), 320 A

PRODUCT SUMMARY

I

T(AV)

Thyristor/Thyristor

FEATURES

• High voltage

• Electrically isolated base plate

• 3600 V

• Industrial standard package

• Simplified mechanical designs, rapid assembly

• High surge capability

• Large creepage distances

• UL approved file E78996

• Designed and qualified for industrial level

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

DESCRIPTION

This new VSK series of MAGN-A-PAK modules uses high
voltage power thyristor/thyristor in doubler circuit
configuration. The semiconductors are electrically isolated
from the metal base, allowing common heatsinks and

320 A

compact assemblies to be built. They can be
interconnected to form single phase or three phase bridges
or as AC-switches when modules are connected in
anti-parallel mode. These modules are intended for general
purpose applications such as battery chargers, welders,
motor drives, UPS, etc.

isolating voltage

RMS

VSKT320PbF Series

Vishay Semiconductors

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

2

I

t 4050 kA2s

V

DRM/VRRM

T

J

70 °C 320

710

50 Hz 9000

60 Hz 9420

50 Hz 405

60 Hz 370

1200, 1600 V

Range - 40 to 130 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

RRM/VDRM

TYPE NUMBER

VSKT320-

Revision: 05-Jul-12

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VOLTAGE

CODE

12 1200 1300

16 1600 1700

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PEAK REVERSE AND OFF-STATE

, MAXIMUM REPETITIVE

BLOCKING VOLTAGE

V

1

, [e-mail], [e-mail]

V

, MAXIMUM

RSM

NON-REPETITIVE PEAK

REVERSE VOLTAGE

V

Document Number: 94085

A

kA2s

I

RRM/IDRM

AT 130 °C

MAXIMUM

mA

50

VSKT320PbF Series

www.vishay.com

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current 
at case temperature

Maximum RMS on-state current I

Maximum peak, one-cycle on-state
non-repetitive, surge current

Maximum I

Maximum I

2

t for fusing I2t

2

t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 4050 kA2s

Low level value or threshold voltage V

High level value of threshold voltage V

Low level value on-state slope resistance r

High level value on-state slope
resistance

Maximum peak on-state or
forward voltage drop

Maximum holding current I

Maximum latching current I

I

T(AV)

T(RMS)

I

TSM

T(TO)1

T(TO)2

t1

(I >  x I

r

t2

V

, V

TM

FM

H

L

180° conduction, half sine wave

As AC switch 710

t = 10 ms

t = 8.3 ms 9420

t = 10 ms

t = 8.3 ms 7920

t = 10 ms

t = 8.3 ms 370

t = 10 ms

t = 8.3 ms 262

(16.7 % x  x I
T

= TJ maximum

J

(I >  x I

T(AV)

(16.7 % x  x I
T

= TJ maximum

J

T(AV)

No voltage
reapplied

100 % V
reapplied

No voltage
reapplied

100 % V
reapplied

< I <  x I

T(AV)

< I <  x I

< I <  x I

T(AV)

< I <  x I



RRM



RRM

), 

T(AV)

), TJ = TJ maximum 1.03

T(AV)

), 

T(AV)

), TJ = TJ maximum 0.53

T(AV)

ITM = 750 A, TJ = TJ maximum, 180° conduction,
average power = V

= 750 A, TJ = 25 °C, 180° conduction,

I

TM

average power = V

T(TO)

T(TO)

x I

x I

T(AV)

T(AV)

+ rf x (I

+ rt x (I

Anode supply = 12 V, initial IT = 30 A, TJ = 25 °C 500
Anode supply = 12 V, resistive load = 1 ,

gate pulse: 10 V, 100 μs, T

= 25 °C

J

Vishay Semiconductors

320 A

70 °C

9000

Sinusoidal
half wave,
initial T

= 

J

maximum

T

J

2

)

T(RMS)

2

)

T(RMS)

7570

405

287

0.80

0.75

1.37

1.40

1000

A

kA2s

V

m

V

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Typical delay time t

Typical rise time t

Typical turn-off time range t

d

TJ = 25 °C, gate current = 1 A dIg/dt = 1 A/μs
V

= 0.67 % V

r

q

d

I

= 300 A; dI/dt = 15 A/μs; TJ = TJ maximum;

TM

V

= 50 V; dV/dt = 20 V/μs; gate 0 V, 100 

R

DRM

1.0

2.0

200 to 350

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak reverse and 
off-state leakage current

RMS insulation voltage V

Critical rate of rise of off-state voltage dV/dt T

Revision: 05-Jul-12

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I

RRM,

I

DRM

TJ = TJ maximum 50 mA

50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s 3600 V

INS

= TJ maximum, exponential to 67 % rated V

J

2

DRM

1000 V/μs

Document Number: 94085

, [e-mail], [e-mail]

μs

VSKT320PbF Series

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TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

GM

G(AV)

Maximum peak gate current + I

Maximum peak negative gate voltage - V

Maximum required DC gate voltage to trigger V

Maximum required DC gate current to trigger I

Maximum gate voltage that will not trigger V

Maximum gate current that willnot trigger I

GT

GT

GD

GD

Maximum rate of rise of turned-on current dI/dt

tp  5 ms, TJ = TJ maximum 10.0

f = 50 Hz, TJ = TJ maximum 2.0

tp  5 ms, TJ = TJ maximum 3.0 A

GM

tp  5 ms, TJ = TJ maximum 5.0

GT

TJ = - 40 °C

T

= 25 °C 3.0

J

T

= TJ maximum 2.0

J

Anode supply = 12 V,
resistive load; Ra = 1 

TJ = - 40 °C

= 25 °C 200

J

T

= TJ maximum 100

J

TJ = TJ maximum, rated V

TJ = TJ maximum, rated V

= TJ maximum, ITM = 400 A, 

T

J

rated V

DRM

applied

Anode supply = 12 V,
resistive load; Ra = 1 

applied 0.25 V

DRM

applied 10.0 mA

DRM

Vishay Semiconductors

W

4.0

350

500 A/μs

V

mAT

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Junction operating and storage 
temperature range

Maximum thermal resistance, 
junction to case per junction

Typical thermal resistance,
case to heatsink per module

MAP to heatsink

Mounting torque ± 10 %

busbar to MAP

Approximate weight

, T

T

J

Stg

R

thJC

DC operation 0.125

- 40 to 130 °C

K/W

R

thCS

Mounting surface flat, smooth and greased 0.02

A mounting compound is recommended
and the torque should be rechecked after
a period of about 3 hours to allow for the

4 to 6 Nm

spread of the compound.

500 g

17.8 oz.

Case style MAGN-A-PAK

R CONDUCTION PER JUNCTION

DEVICES

SINUSOIDAL CONDUCTION AT T

180° 120° 90° 60° 30° 180° 120° 90° 60° 30°

VSKT320- 0.009 0.010 0.013 0.020 0.032 0.007 0.011 0.015 0.020 0.033 K/W

Note

• Table shows the increment of thermal resistance R

MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM

J

when devices operate at different conduction angles than DC

thJC

UNITS

Revision: 05-Jul-12

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Maximum Allowable Case

Temperature (°C)

Average On-State Current (A)

50 150 250100 200 300 3500

94085_01

60

70

80

90

100

120

130

110

180°

120°

60°

30°

90°

R

thJC(DC)

= 0.125 K/W

Conduction angle

Ø

Maximum Allowable Case

Temperature (°C)

Average On-State Current (A)

100 400200 300 5000

94085_02

50

60

70

80

100

110

120

130

90

R

thJC(DC)

= 0.125 K/W

Ø

Conduction angle

180°

120°

60°

30°

DC

90°

Maximum Average On-State

Power Loss (W)

Average On-State Current (A)

100 200 300

400

0

500

450

350

250

150

400

300

200

50

100

0

180°
120°

90°
60°
30°

RMS limit

Conduction angle

Per Junction

T

J

= 130 °C

Ø

94085_03

Maximum Average On-State

Power Loss (W)

Average On-State Current (A)

300100 500200 4000

650

450

500

550

600

350

250

150

400

300

200

50

100

0

DC
180°
120°

90°

60°

30°

RMS limit

Conduction angle

Per Junction

T

J

= 130 °C

Ø

94085_04

Peak Half Sine Wave

On-State Current (A)

Pulse Train Duration (s)

10.10.01

3000

94085_06

4000

5000

6000

7000

8000

9000

No voltage reapplied
Rated V

RRM

reapplied

Per junction

Maximum non-repetitive surge current

versus pulse train duration. Control

of conduction may not be maintained.

Initial T

J

= 130 °C

VSKT320PbF Series

Vishay Semiconductors

Fig. 1 - Current Ratings Characteristics

Fig. 2 - Current Ratings Characteristics

8000

7500

7000

6500

6000

5500

5000

On-State Current (A)

Peak Half Sine Wave

4500

4000

3500

94085_05

Fig. 5 - Maximum Non-Repetitive Surge Current

Fig. 4 - On-State Power Loss Characteristics

At any rated load condition and with

rated V

Per junction

1

applied following surge.

RRM

Initial T

60 Hz 0.0083 s
50 Hz 0.0100 s

10

J

= 130 °C

100

Number of Equal Amplitude Half

Cycle Current Pulses (N)

Fig. 3 - On-State Power Loss Characteristics

Revision: 05-Jul-12

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Fig. 6 - Maximum Non-Repetitive Surge Current

4

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Instantaneous On-State Current (A)

Instantaneous On-State Voltage (V)

1.5 2.5 3.5

4.5

0.5

94085_07

10 000

1000

100

TJ = 25 °C

TJ = 130 °C

Per junction

1

- Module type

2 - Circuit configuration: T = Two SCR doubler configuration

3

- Current rating

4 - Voltage code x 100 = V

RRM

(see Voltage Ratings table)

5

- Lead (Pb)-free

Device code

51 32 4

VSK T 320 - 16 PbF

1

VSKT320PbF Series

Vishay Semiconductors

Fig. 7 - On-State Voltage Drop Characteristics

0.1

0.01

- Transient Thermal
Impedance (°C/W)

thJC

Z

0.001

0.001 0.01 0.1 100110

94085_08

ORDERING INFORMATION TABLE

Steady state value

= 0.125 K/W

R

thJC

(DC operation)

Square Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance Z

Characteristics

thJC

Note

• To order the optional hardware go to www.vishay.com/doc?95172

Revision: 05-Jul-12

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

5

, [e-mail], [e-mail]

Document Number: 94085

VSKT320PbF Series

+

-

~

~

+

-

K1 G1 G2K2

www.vishay.com

CIRCUIT CONFIGURATION

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95086

Vishay Semiconductors

Revision: 05-Jul-12

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Document Number: 94085

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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12

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Document Number: 91000