C&H Technology VSKT320PbF User Manual
6121 Baker Road,
Suite 108
Minnetonka, MN 55345
www.chtechnology.com
Phone (952) 933-6190
Fax (952) 933-6223
1-800-274-4284
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Please contact the C&H Technology team for the following questions -
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Application
Assembly
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Phone – 1-800-274-4284
E-Mail – sales@chtechnology.com
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MAGN-A-PAK
(MAGN-A-PAK Power Modules), 320 A
PRODUCT SUMMARY
I
T(AV)
Thyristor/Thyristor
FEATURES
• High voltage
• Electrically isolated base plate
• 3600 V
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This new VSK series of MAGN-A-PAK modules uses high
voltage power thyristor/thyristor in doubler circuit
configuration. The semiconductors are electrically isolated
from the metal base, allowing common heatsinks and
320 A
compact assemblies to be built. They can be
interconnected to form single phase or three phase bridges
or as AC-switches when modules are connected in
anti-parallel mode. These modules are intended for general
purpose applications such as battery chargers, welders,
motor drives, UPS, etc.
isolating voltage
RMS
VSKT320PbF Series
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
2
I
t 4050 kA2s
V
DRM/VRRM
T
J
70 °C 320
710
50 Hz 9000
60 Hz 9420
50 Hz 405
60 Hz 370
1200, 1600 V
Range - 40 to 130 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM/VDRM
TYPE NUMBER
VSKT320-
Revision: 05-Jul-12
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
VOLTAGE
CODE
12 1200 1300
16 1600 1700
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PEAK REVERSE AND OFF-STATE
, MAXIMUM REPETITIVE
BLOCKING VOLTAGE
V
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
V
, MAXIMUM
RSM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
Document Number: 94085
A
kA2s
I
RRM/IDRM
AT 130 °C
MAXIMUM
mA
50
VSKT320PbF Series
www.vishay.com
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
Maximum RMS on-state current I
Maximum peak, one-cycle on-state
non-repetitive, surge current
Maximum I
Maximum I
2
t for fusing I2t
2
t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 4050 kA2s
Low level value or threshold voltage V
High level value of threshold voltage V
Low level value on-state slope resistance r
High level value on-state slope
resistance
Maximum peak on-state or
forward voltage drop
Maximum holding current I
Maximum latching current I
I
T(AV)
T(RMS)
I
TSM
T(TO)1
T(TO)2
t1
(I > x I
r
t2
V
, V
TM
FM
H
L
180° conduction, half sine wave
As AC switch 710
t = 10 ms
t = 8.3 ms 9420
t = 10 ms
t = 8.3 ms 7920
t = 10 ms
t = 8.3 ms 370
t = 10 ms
t = 8.3 ms 262
(16.7 % x x I
T
= TJ maximum
J
(I > x I
T(AV)
(16.7 % x x I
T
= TJ maximum
J
T(AV)
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
< I < x I
T(AV)
< I < x I
< I < x I
T(AV)
< I < x I
RRM
RRM
),
T(AV)
), TJ = TJ maximum 1.03
T(AV)
),
T(AV)
), TJ = TJ maximum 0.53
T(AV)
ITM = 750 A, TJ = TJ maximum, 180° conduction,
average power = V
= 750 A, TJ = 25 °C, 180° conduction,
I
TM
average power = V
T(TO)
T(TO)
x I
x I
T(AV)
T(AV)
+ rf x (I
+ rt x (I
Anode supply = 12 V, initial IT = 30 A, TJ = 25 °C 500
Anode supply = 12 V, resistive load = 1 ,
gate pulse: 10 V, 100 μs, T
= 25 °C
J
Vishay Semiconductors
320 A
70 °C
9000
Sinusoidal
half wave,
initial T
=
J
maximum
T
J
2
)
T(RMS)
2
)
T(RMS)
7570
405
287
0.80
0.75
1.37
1.40
1000
A
kA2s
V
m
V
mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical delay time t
Typical rise time t
Typical turn-off time range t
d
TJ = 25 °C, gate current = 1 A dIg/dt = 1 A/μs
V
= 0.67 % V
r
q
d
I
= 300 A; dI/dt = 15 A/μs; TJ = TJ maximum;
TM
V
= 50 V; dV/dt = 20 V/μs; gate 0 V, 100
R
DRM
1.0
2.0
200 to 350
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak reverse and
off-state leakage current
RMS insulation voltage V
Critical rate of rise of off-state voltage dV/dt T
Revision: 05-Jul-12
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
I
RRM,
I
DRM
TJ = TJ maximum 50 mA
50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s 3600 V
INS
= TJ maximum, exponential to 67 % rated V
J
2
DRM
1000 V/μs
Document Number: 94085
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
μs
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