C&H Technology VSKS500-08PbF User Manual
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MAP Block Power Module Single Thyristor, 500 A
MAP Block Power
PRODUCT SUMMARY
I
T(AV)
500 A
VSKS500-08PbF
Vishay High Power Products
FEATURES
• Electrically isolated base plate
• 3000 V
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• Compliant to RoHS directive 2002/95/EC
APPLICATIONS
• Battery chargers
• Welders
• Power converters
•Alternators
isolating voltage
RMS
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
V
DRM/VRRM
I
T(AV)
I
TSM
2
I
t
2
I
√t 9800 kA2√s
T
J
T
C
50 Hz 14 000
60 Hz 14 658
50 Hz 980
60 Hz 894
Range - 40 to 130 °C
800 V
500 A
76 °C
kA2s
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM/VDRM
TYPE NUMBER
VSKS500-08PbF 800 900 80
REPETITIVE PEAK
REVERSE VOLTAGE
, MAXIMUM
V
V
RSM/VDSM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
, MAXIMUM
V
AT 130 °C
A
I
RRM/IDRM
mA
Document Number: 93160 For technical questions, contact: indmodules@vishay.com
Revision: 14-Dec-09 1
www.vishay.com
VSKS500-08PbF
Vishay High Power Products
MAP Block Power Module
Single Thyristor, 500 A
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
Maximum RMS on-state current I
Maximum peak, one-cycle
on-state, non-repetitive
surge current
2
Maximum I
Maximum I
t for fusing I2t
2
√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 1385 kA2√s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value on-state
slope resistance
High level value on-state
slope resistance
Maximum on-state voltage drop V
I
T(AV)
T(RMS)
I
TSM
T(TO)1
T(TO)2
r
t1
r
t2
TM
180° conduction half sine wave
As AC switch 785
t = 10 ms
t = 8.3 ms 17 430
t = 10 ms
t = 8.3 ms 14 658
t = 10 ms
t = 8.3 ms 1265
t = 10 ms
t = 8.3 ms 894
(16.7 % x π x I
(I > π x I
T(AV)
(16.7 % x π x I
(I > π x I
T(AV)
TJ = 25 °C, 500 A I
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
RRM
RRM
Sine half wave,
initial T
=
J
maximum
T
J
reapplied
T(AV)
< I < π x I
), TJ maximum 0.6839
T(AV)
), TJ maximum 0.7598
T(AV)
< I < π x I
), TJ maximum 0.393
T(AV)
), TJ maximum 0.389
pk
500 A
76 °C
16 646
14 000
1385
894
1.1 V
A
kA2s
V
mΩ
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical delay time t
Typical turn-off time t
Gate current 1 A, dIg/dt = 1 A/μs
d
V
= 0.67 % V
d
ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/μs, VR = 50 V
q
dV/dt = 20 V/μs, Gate 0 V 100 Ω, t
, TJ = 25 °C, It = 400 A
DRM
= 500 μs
p
1.3
μs
200
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and off-state
leakage current
RMS insulation voltage V
dV/dt T
I
,
DRM
I
RRM
INS
= TJ maximum linear to 67 % rated V
J
TJ = TJ maximum, rated V
DRM/VRRM
DRM
applied 80 mA
500 V/μs
50 Hz, circuit to base, all terminal shorted, t = 1 s 3000 V
www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 93160
2 Revision: 14-Dec-09
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