C&H Technology VSKS500-08PbF User Manual

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MAP Block Power Module Single Thyristor, 500 A

MAP Block Power

PRODUCT SUMMARY

I

T(AV)

500 A

VSKS500-08PbF

Vishay High Power Products

FEATURES

• Electrically isolated base plate

• 3000 V

• Industrial standard package

• Simplified mechanical designs, rapid assembly

• High surge capability

• Large creepage distances

• Compliant to RoHS directive 2002/95/EC

APPLICATIONS

• Battery chargers

• Welders

• Power converters

•Alternators

isolating voltage

RMS

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

V

DRM/VRRM

I

T(AV)

I

TSM

2

I

t

2

I

√t 9800 kA2√s

T

J

T

C

50 Hz 14 000

60 Hz 14 658

50 Hz 980

60 Hz 894

Range - 40 to 130 °C

800 V

500 A

76 °C

kA2s

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

RRM/VDRM

TYPE NUMBER

VSKS500-08PbF 800 900 80

REPETITIVE PEAK

REVERSE VOLTAGE

, MAXIMUM

V

V

RSM/VDSM

NON-REPETITIVE PEAK

REVERSE VOLTAGE

, MAXIMUM

V

AT 130 °C

A

I

RRM/IDRM

mA

Document Number: 93160 For technical questions, contact: [e-mail]
Revision: 14-Dec-09 1

www.vishay.com

VSKS500-08PbF

Vishay High Power Products

MAP Block Power Module

Single Thyristor, 500 A

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

Maximum peak, one-cycle
on-state, non-repetitive
surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 1385 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value on-state
slope resistance

High level value on-state
slope resistance

Maximum on-state voltage drop V

I

T(AV)

T(RMS)

I

TSM

T(TO)1

T(TO)2

r

t1

r

t2

TM

180° conduction half sine wave

As AC switch 785

t = 10 ms

t = 8.3 ms 17 430

t = 10 ms

t = 8.3 ms 14 658

t = 10 ms

t = 8.3 ms 1265

t = 10 ms

t = 8.3 ms 894

(16.7 % x π x I
(I > π x I

T(AV)

(16.7 % x π x I

(I > π x I

T(AV)

TJ = 25 °C, 500 A I

No voltage
reapplied

100 % V
reapplied

No voltage
reapplied

100 % V

RRM

RRM

Sine half wave,
initial T

=

J

maximum

T

J

reapplied

T(AV)

< I < π x I

), TJ maximum 0.6839

T(AV)

), TJ maximum 0.7598

T(AV)

< I < π x I

), TJ maximum 0.393

T(AV)

), TJ maximum 0.389

pk

500 A

76 °C

16 646

14 000

1385

894

1.1 V

A

kA2s

V

mΩ

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Typical delay time t

Typical turn-off time t

Gate current 1 A, dIg/dt = 1 A/μs

d

V

= 0.67 % V

d

ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/μs, VR = 50 V

q

dV/dt = 20 V/μs, Gate 0 V 100 Ω, t

, TJ = 25 °C, It = 400 A

DRM

= 500 μs

p

1.3

μs

200

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

Maximum peak reverse and off-state
leakage current

RMS insulation voltage V

dV/dt T

I

,

DRM

I

RRM

INS

= TJ maximum linear to 67 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

applied 80 mA

500 V/μs

50 Hz, circuit to base, all terminal shorted, t = 1 s 3000 V

www.vishay.com For technical questions, contact: [e-mail] Document Number: 93160
2 Revision: 14-Dec-09

VSKS500-08PbF

MAP Block Power Module

Vishay High Power Products

Single Thyristor, 500 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum required DC gate voltage to trigger V

Maximum required DC gate current to trigger I

Maximum holding current I

Maximum peak positive gate voltage +V

Maximum peak negative gate voltage -V

DC gate voltage not to trigger V

DC gate current not to trigger I

Maximum non-repetitive rate of rise of
turned-on current

dI/dt

GM

G(AV)

GM

GT

GD

GD

TJ = TJ maximum, tp ≤ 5 ms 10.0

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

TJ = TJ maximum, tp ≤ 5 ms 3.0 A

GT

TJ = 25 °C
Anode supply: 12 V resistive load

H

GM

TJ = TJ maximum, tp ≤ 5 ms

GM

TJ = TJ maximum
Maximum gate current/voltage not to trigger is

200

600

0.30 V

the maximum value which will not trigger any
unit with rated V

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

I

= 400 A

t

anode to cathode applied

DRM

≤ 1 μs

r

DRM

,

1000 A/μs

W

3V

mA

20

5.0

V

10 mA

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating and storage
temperature range

Maximum thermal resistance,
junction to case per junction

Maximum thermal resistance,
case to heatsink per module

Mounting
torque ± 10 %

MAP Block to heatsink

busbar to MAP Block 12 to 15

Approximate weight

, T

T

J

Stg

R

thJC

R

thCS

DC operation 0.08

Mounting surface smooth, flat and greased 0.035

A mounting compound is recommended and
the torque should be rechecked after a period

- 40 to 130 °C

6 to 8

of 3 h to allow for the spread of the compound.
Lubricated threads.

430 g

15.3 oz.

Case style MAP Block Power

ΔR CONDUCTION PER JUNCTION

SINUSOIDAL CONDUCTION

AT T

MAXIMUM

DEVICES

J

180° 120° 90° 60° 30° 180° 120° 90° 60° 30°

VSKS500 0.013 0.0148 0.018 0.026 0.044 0.082 0.0142 0.019 0.027 0.044 K/W

Note

• Table shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJC

RECTANGULAR CONDUCTION

AT TJ MAXIMUM

UNITS

K/W

Nm

Document Number: 93160 For technical questions, contact: [e-mail] www.vishay.com
Revision: 14-Dec-09 3

VSKS500-08PbF

Vishay High Power Products

140

120

100

80

60

40

Temperature (°C)

20

Maximum Allowable Case

0

93160_01

140

120

100

80

60

40

Temperature (°C)

20

Maximum Allowable Case

0

93160_02

30°

100 300200 400 500 6000

Average On-State Current (A)

Fig. 1 - Current Rating Characteristics

30°

Ø

Conduction period

Per leg,

= 125 °C

T

J

100 300200 400 5000

Average On-State Current (A)

Fig. 2 - Current Rating Characteristics

Conduction angle

60°

90°

120°

60°

90°

MAP Block Power Module

Single Thyristor, 500 A

Ø

180°

Power Loss (W)

Maximum Average On-State

93160_04

15 500

14 500

13 500

12 500

11 500

10 500

180°

On-State Current (A)

120°

Peak Half Sine Wave

93160_05

600

500

400

300

200

100

180°
120°

90°
60°
30°

Conduction period

Per leg, TJ = 125 °C

0

0

100 200 300 400 500

RMS limit

Ø

Average On-State Current (A)

Fig. 4 - On-State Power Loss Characteristics

Maximum non-repetitive surge current

9500

8500

7500

6500

versus pulse train duration.

No voltage reapplied

10 1001

= 130 °C

Initial T

J

Voltage reapplied

Number of Equal Amplitude Half

Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

700

600

500

400

300

Power Loss (W)

200

100

Maximum Average On-State

0

93160_03

Fig. 3 - On-State Power Loss Characteristics

180°
120°

90°
60°
30°

Conduction angle

0

100 200 300 400 500 600

Average On-State Current (A)

RMS limit

Ø

17 500

15 500

13 500

11 500

9500

On-State Current (A)

Peak Half Sine Wave

7500

5500

93160_06

Maximum non-repetitive surge current

versus pulse train duration.

Initial T

No voltage reapplied

Voltage reapplied

0.1 1 100.01

= 130 °C

J

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

www.vishay.com For technical questions, contact: [e-mail] Document Number: 93160
4 Revision: 14-Dec-09

VSKS500-08PbF

0.1

MAP Block Power Module

Single Thyristor, 500 A

10 000

1000

100

10

Instantaneous On-State Current (A)

1

0 0.5 1.0 1.5 2.0 2.5 3.0

93160_07

Instantaneous On-State Voltage (V)

Fig. 7 - On-State Voltage Drop Characteristics

TJ = 130 °C

Vishay High Power Products

0.01

- Transient Thermal
Impedance (K/W)

thJC

Z

0.001

0.001

93160_08

0.01 0.1 1 10

Fig. 8 - Thermal Impedance Z

ORDERING INFORMATION TABLE

Device code

VSK S 500 - 08 PbF

1

2

3

4

5

Square Wave Pulse Duration (s)

Characteristics

thJC

4132

5

- Module type

- Circuit configuration (S = Single SCR)

- Current rating (500 = 500 A)

- Voltage rating (08 = 800 V)

- PbF = Lead (Pb)-free

100

Document Number: 93160 For technical questions, contact: [e-mail] www.vishay.com
Revision: 14-Dec-09 5

VSKS500-08PbF

Vishay High Power Products

MAP Block Power Module

Single Thyristor, 500 A

CIRCUIT CONFIGURATION

2 (+)

1

2

3 (-)

546

7

K1 G1

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95379

K1 G1

www.vishay.com For technical questions, contact: [e-mail] Document Number: 93160
6 Revision: 14-Dec-09

DIMENSIONS in millimeters

Outline Dimensions

Vishay Semiconductors

Thyristor MAP Block

51.5 ± 0.3

Fast-on tab 2.8 x 0.8

33 ± 0.5

9.5 ± 0.5

Ø 6.3

38 ± 0.3

5

102.8 ± 0.3

36.8 ± 0.15 44.7 ± 0.15

5

K

4

G

6
7

80 ± 0.3

93.5 ± 0.3

3.0

20

M10

KA

25

+ 1.5

52

- 0.0

Notes

• Dimensions are nominal

• Full engineering drawings are available on request

Document Number: 95379 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 02-Dec-09 1

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provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12

1

Document Number: 91000