C&H Technology VSKJS440-030 User Manual

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Suite 108
Minnetonka, MN 55345

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www.vishay.com

ADD-A-PAK

Power Modules Schottky Rectifier, 440 A

PRODUCT SUMMARY

I

F(AV)

ADD-A-PAK Generation VII

FEATURES

• 150 °C TJ operation

• Low forward voltage drop

• High frequency operation

• Low thermal resistance

• UL approved file E78996

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

BENEFITS

• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate

• High surge capability

440 A

• Easy mounting on heatsink

VSKJS440/030

Vishay Semiconductors

ELECTRICAL DESCRIPTION

MECHANICAL DESCRIPTION

The ADD-A-PAK generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.

The VSKJS440/030 Schottky rectifier common anode has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

I

FSM

V

T

RRM

F

J

Rectangular waveform 440 A

30 V

tp = 5 μs sine 27 000 A

200 Apk, TJ = 125 °C 0.61 V

Range - 55 to 150 °C

VOLTAGE RATINGS

PARAMETER SYMBOL VSKJS440/030 UNITS

Maximum DC reverse voltage V

Maximum working peak reverse voltage V

R

RWM

30 V

Revision: 09-Jan-12

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1

, [e-mail], [e-mail]

Document Number: 94645

VSKJS440/030

www.vishay.com

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average
forward current

Maximum peak one cycle
non-repetitive surge current

Non-repetitive avalanche energy E

Repetitive avalanche current I

per module

per leg 220

I

F(AV)

50 % duty cycle at TC = 97 °C, rectangular waveform

5 μs sine or 3 μs rect. pulse

I

FSM

AR

10 ms sine or 6 ms rect. pulse 3000

TJ = 25 °C, IAS = 20 A, L = 1 mH 198 mJ

AS

Current decaying linearly to zero in 1 μs
Frequency limited by T

maximum VA = 1.5 x VR typical

J

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

220 A

Maximum forward voltage drop V

FM

440 A 1.0

220 A

440 A 0.93

Maximum reverse leakage current I

Maximum junction capacitance C

Typical series inductance L

RM

TJ = 25 °C

T

= 125 °C 1120

J

VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 14 800 pF

T

Measured lead to lead 5 mm from package body 5.0 nH

S

Maximum voltage rate of change dV/dt Rated V

Maximum RMS insulation voltage V

INS

50 Hz

R

T

J

T

J

V

R

Vishay Semiconductors

440

Following any rated
load condition and with
rated V

RRM

applied

= 25 °C

= 125 °C

= Rated V

R

27 000

0.68

0.61

10 000 V/μs

3000 (1 min)

3600 (1 s)

44 A

20

mA

A

V

V

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case per leg

Typical thermal resistance,
case to heatsink per module

Approximate weight

Mounting torque ± 10 %

heatsink

busbar 3

Case style JEDEC TO-240AA compatible

Revision: 09-Jan-12

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

, T

T

J

Stg

R

DC operation 0.26

thJC

- 55 to 150 °C

°C/W

R

thCS

0.1

75 g

2.7 oz.

to

A mounting compound is recommended and the torque

4

should be rechecked after a period of 3 h to allow for the
spread of the compound.

2

Document Number: 94645

, [e-mail], [e-mail]

Nm