C&H Technology VSKF200P User Manual

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Fast Thyristor/Diode and Thyristor/Thyristor

(MAGN-A-PAK

MAGN-A-PAK

PRODUCT SUMMARY

I

T(AV)

TM

200 A

VSK.F200..P Series

Vishay High Power Products

TM

Power Modules), 200 A

FEATURES

• Fast turn-off thyristor

• Fast recovery diode

• High surge capability

• Electrically isolated baseplate

• 3500 V

• Industrial standard package

• Lead (Pb)-free

• Designed and qualified for industrial level

DESCRIPTION

This series of MAGN-A-PAKTM modules are intended
for applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and others
where fast switching characteristics are required.

isolating voltage

RMS

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

2

I

√t 2900 kA2√s

t

q

t

rr

V

DRM/VRRM

T

J

T

C

50 Hz 7600

60 Hz 8000

50 Hz 290

60 Hz 265

Range - 40 to 125 °C

200 A

85 °C

444

20/25

2

up to 1200 V

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

, MAXIMUM REPETITIVE

BLOCKING VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

TYPE NUMBER

VSK.F200-

V

RRM/VDRM

VOLTAGE

CODE

08 800 800

12 1200 1200

PEAK REVERSE AND OFF-STATE

A

kA2s

µs

I

RRM/IDRM

AT TJ = 125 °C

mA

50

Document Number: 94422 For technical questions, contact: [e-mail]
Revision: 03-Jun-08 1

www.vishay.com

VSK.F200..P Series

Vishay High Power Products

Fast Thyristor/Diode and Thyristor/Thyristor

(MAGN-A-PAKTM Power Modules), 200 A

CURRENT CARRYING CAPABILITY

I

FREQUENCY UNITS

180° el

TM

180° el

50 Hz 380 560 630 850 2460 3180

400 Hz 460 690 710 1060 1570 2080

2500 Hz 310 450 530 760 630 860

5000 Hz 250 360 410 560 410 560

10 000 Hz 180 280 300 410 - -

Recovery voltage V

r

Voltage before turn-on V

d

50 50 50 50 50 50

80 % V

DRM

80 % V

Rise of on-state current dI/dt 5050----A/µs

Case temperature 85 60 85 60 85 60 °C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 Ω/µF

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

Maximum peak, one-cycle
non-repetitive on-state,
surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 2900 kA2√s

Low level value or threshold voltage V

High level value of threshold voltage V

Low level value on-state slope resistance r

High level value on-state slope resistance r

Maximum on-state voltage drop V

Maximum holding current I

Maximum latching current I

I

T(AV)

T(RMS)

I

TSM

T(TO)1

T(TO)2

t1

(I > π x I

t2

TM

H

L

180° conduction, half sine wave

As AC switch 444

t = 10 ms

t = 8.3 ms 8000

t = 10 ms

t = 8.3 ms 6700

t = 10 ms

t = 8.3 ms 265

t = 10 ms

t = 8.3 ms 187

(16.7 % x π x I
T

= TJ maximum

J

(I > π x I

T(AV)

(16.7 % x π x I

= TJ maximum

T

J

T(AV)

No voltage
reapplied

100 % V
reapplied

No voltage
reapplied

100 % V
reapplied

< I < π x I

T(AV)

< I < π x I

< I < π x I

T(AV)

< I < π x I

T(AV)

T(AV)

Ipk = 600 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.73 V

TJ = 25 °C, IT > 30 A 6000

TJ = 25 °C, VA = 12 V, Ra = 6 Ω, Ig = 1A 1000

DRM

I

TM

100 µs

80 % V

DRM

I

TM

200 A

85 °C

7600

RRM

RRM

T(AV)

Sinusoidal
half wave,
initial T

),

= 125 °C

J

6400

290

205

1.18

), TJ = TJ maximum 1.25

),

T(AV)

0.74

), TJ = TJ maximum 0.70

A

V

A

kA2s

V

mΩ

mA

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94422

2 Revision: 03-Jun-08

VSK.F200..P Series

Fast Thyristor/Diode and Thyristor/Thyristor

Vishay High Power Products

(MAGN-A-PAKTM Power Modules), 200 A

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS

Maximum non-repetitive rate of rise dI/dt

Maximum recovery time t

Maximum turn-off time t

rr

q

Gate drive 20 V, 20 Ω, t
T

= 25 °C

J

ITM = 350 A, dI/dt = - 25 A/µs, VR = 50 V, TJ = 25 °C 2

I

= 750 A; TJ = TJ maximum; dI/dt = - 25 A/µs;

TM

V

= 50 V; dV/dt = 400 V/µs linear to 80 % V

R

≤ 1 ms, VD = 80 % V

r

DRM

DRM

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

RMS insulation voltage V

Maximum peak reverse and off-state
leakage current

dV/dt T

INS

,

I

RRM

I

DRM

= 125 °C, exponential to 67 % V

J

DRM

50 Hz, circuit to base, TJ = 25 °C, t = 1 s 3000 V

TJ = 125 °C, rated V

DRM/VRRM

applied 50 mA

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum peak average gate power P

Maximum peak positive gate current I

Maximum peak negative gate voltage -V

Maximum DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GM

G(AV)

GM

GT

GT

GD

GD

f = 50 Hz, d% = 50 60

TJ = 125 °C, f = 50 Hz, d% = 50 10

TJ = 125 °C, tp ≤ 5 ms

GT

TJ = 25 °C, V

TJ = 125 °C, rated V

12 V, Ra = 6

ak

DRM

applied

VALUES

KJ

,

20 25

UNITS

800 A/µs

µs

1000 V/µs

W

10 A

5V

200 mA

3V

20 mA

0.25 V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating
temperature range

Storage temperature range T

Maximum thermal resistance,
junction to case per junction

Maximum thermal resistance,
case to heatsink per module

MAP to heatsink

Mounting torque ± 10 %

busbar to MAP

R

R

T

J

Stg

thJC

thC-hs

DC operation 0.125

Mounting surface flat, smooth and greased 0.025

A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to
allow for the spread of the compound. Use of cable
lugs is not recommended, busbar should be used

Approximate weight

and restrained during tightening. Threads must be
lubricated with a compound.

Document Number: 94422 For technical questions, contact: [e-mail]
Revision: 03-Jun-08 3

- 40 to 125

- 40 to 150

4 to 6

(35 to 53)

500 g

17.8 oz.

www.vishay.com

°C

K/W

N · m

(lbf · in)

VSK.F200..P Series

Vishay High Power Products

Fast Thyristor/Diode and Thyristor/Thyristor

(MAGN-A-PAKTM Power Modules), 200 A

ΔR

Note

• Table shows the increment of thermal resistance R

CONDUCTION

thJC

CONDUCTIONS ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION UNITS

180° 0.009 0.006

120° 0.10 0.011

90° 0.014 0.015

60° 0.020 0.020

30° 0.32 0.033

when devices operate at different conduction angles than DC

thJC

130

120

110

100

90

80

70

60

Maximum Allowable Case Temperature (°C)

0 40 80 120 160 200 240

VSK.F200. . Serie s
R ( D C ) = 0. 12 5 K/ W

thJC

Cond uc tion A ngle

30°

60°

90°

120°

Average On-state Current (A)

180°

350

300

250

200

150

100

50

0

Maximum Average On-state Power Loss (W)

180°
120°

90°
60°
30°

RM S Li m i t

Conduc tion Angle

VSK.F200. . Series
Pe r Ju nc t io n
T = 12 5 ° C

J

0 40 80 120 160 200

Average On-state Current (A)

K/W

Fig. 1 - Current Ratings Characteristics

130

120

110

100

90

80

70

60

Maximum Allowable Case Temperature (°C)

0 50 100 150 200 250 300 350

VSK.F200.. Se rie s
R (DC) = 0.125 K/W

thJC

Conduction Period

30°

60°

90°

120°

180°

Average On-state Current (A)

Fig. 2 - Current Ratings Characteristics

DC

Fig. 3 - On-State Power Loss Characteristics

500

450

400

350

300

250

200

150

100

50

Maximum Average On-state Power Lo ss (W)

DC
180°
120°

90°

60°

30°

RM S Li m i t

Conduction Period

VSK.F200.. Se ries
Pe r Ju nc t i on
T = 12 5° C

0

0 50 100 150 200 250 300 350

Average On-state Current (A)

J

Fig. 4 - On-State Power Loss Characteristics

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94422

4 Revision: 03-Jun-08

VSK.F200..P Series

Fast Thyristor/Diode and Thyristor/Thyristor

(MAGN-A-PAKTM Power Modules), 200 A

7000

6000

5000

4000

Peak Half Sine Wave On-state Current (A)

3000

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

8000

7000

6000

5000

4000

Peak Half Sine Wa ve On-st ate Current (A)

3000

At Any Ra ted Load Condition And With

Rat ed V Applie d Follo wing Surg e.

RRM

VSK.F200.. Serie s
Pe r Ju n c t io n

110100

Maximum Non Rep etitive Surge Current

Versus Pulse Train Duration. Control

Of Co ndu c tion May Not Be Ma intaine d.

VSK.F200.. Series
Pe r Ju nc t io n

0.01 0.1 1

Pu lse Tr a in D ura t io n ( s)

Initia l T = 125°C

J

@ 6 0 Hz 0 .0 0 8 3 s
@ 5 0 Hz 0 .0 1 0 0 s

Ini t ial T = 125°C

No Vo ltage Re ap plied
Ra t e d V Re a p p l i e d

J

RRM

Vishay High Power Products

1

Steady State Value:

R = 0.125 K/W

thJC

(DC Ope ration)

thJC

0.1

0.01

VSK.F200.. Serie s
Pe r Ju n c t i o n

Tra nsient The rma l Imp eda nc e Z (K/W)

0.001

0.001 0.01 0.1 1 10 100

Sq u a r e W a v e P ul se D u ra t i o n ( s)

Fig. 8 - Thermal Impedance Z

320

300

280

260

240

220

200

180

160

140

120

100

80

10 20 30 40 50 60 70 80 90 100

Maximum Reverse Recovery Charge - Qrr (µC)

Rate Of Fa ll Of Forward Current - d i/ dt ( A/ µs)

I = 1000 A

TM

500 A
300 A
200 A
100 A

Characteristics

thJC

VSK.F200.. Serie s
T = 12 5 °C

J

Fig. 6 - Maximum Non-Repetitive Surge Current

10000

1000

T = 2 5 ° C

J

T = 1 2 5 ° C

J

VSK.F200.. Serie s

Instantaneous On-state Current (A)

100

1234567

Inst a nt an e ou s On -sta te Vol t ag e ( V)

Pe r J u nc t i o n

Fig. 7 - On-State Voltage Drop Characteristics

Fig. 9 - Reverse Recovery Charge Characteristics

180

150

120

90

60

30

Ma ximum Rev erse Re co ve ry Current - Irr (A)

10 20 30 40 50 60 70 80 90 100

Rate Of Fall Of Forward Current - di/dt (A/ µs)

I = 1000A

TM

500A
300A
200A
100A

VSK.F200.. Se ries
T = 12 5 °C

J

Fig. 10 - Reverse Recovery Current Characteristics

Document Number: 94422 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 03-Jun-08 5

VSK.F200..P Series

Vishay High Power Products

1E4

150

400

1E3

5000

1E2

Peak On-stata Current (A)

1E1

1E1 1 E2 1E3 1E4

VSK.F200.. Series
Sinusoidal pulse
T = 85 °C

tp

1E4

VSK.F200.. Serie s
Tr a p e z o i d a l p u l s e
T = 8 5° C d i / d t 5 0 A / µ s

tp

C

1000

2500

C

Pu lse Ba se w id t h ( µs)

Sn u b b e r c i r c u i t
R = 10 o hm s
C = 0.47 µF
V = 80% V

Fast Thyristor/Diode and Thyristor/Thyristor

(MAGN-A-PAKTM Power Modules), 200 A

50 Hz

2500

5000

VSK.F200.. Seri es

s
s

D

DRM

1E4

Fig. 11 - Frequency Characteristics

1E1

E1 1 E2 1 E3 1 E4

Si n us o i d a l p u l se

tp

T = 6 0 ° C

C

VSK.F200.. Serie s
Trap ezoida l p ulse

tp

T = 8 5 °C d i / d t 1 0 0A / µ s

C

Pu lse Ba sew id t h (µ s)

1000

400

50 Hz

150

Snub ber c irc uit
R = 1 0 o h ms

s

C = 0.47 µF

s

V = 80% V

D

DRM

50 Hz

150

1E3

2500

5000

Peak O n-sta te C urre nt (A )

1E2

1 E1 1 E2 1 E3 1 E4

1000

400

Sn u b b e r c i r c u i t
R = 1 0 o h ms

s

C = 0.47 µF

s

V = 80% V

D

Pu lse Ba se w i dt h ( µs)

1E4

50 Hz

150

1E3

2500

5000

Peak On-state Current (A)

1E2

1E1 1E2 1E3 1E4

VSK.F200.. Se rie s
Trapezoidal pulse
T = 6 0 ° C d i / d t 5 0 A / µ s

tp

C

1000

400

Sn u b b e r c i r c u i t
R = 1 0 o h m s

s

C = 0.47 µF

s

V = 80% V

D

Pu lse Ba se w id t h (µ s)

DRM

1E1

1E4

E1 1 E2 1 E3 1 E4

Fig. 12 - Frequency Characteristics

DRM

1E1

1E4

E1 1 E2 1 E3 1 E4

2500

5000

Pu lse Ba sew id t h (µ s)

5000

VSK.F200.. Series
Tr a p e zo i d a l p u l se
T = 60°C di/ dt 100A/µ s

tp

C

150

400

1000

150

400

1000

2500

Pu lse Ba se w id t h (µ s)

50 Hz

Sn u b b e r c i r c u i t
R = 1 0 o h ms

s

C = 0.47 µF

s

V = 80% V

D

50 Hz

Snu bb er c irc uit
R = 10 o hm s

s

C = 0.47 µF

s

V = 80% V

DRM

D

DRM

Fig. 13 - Frequency Characteristics

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94422

6 Revision: 03-Jun-08

VSK.F200..P Series

Fast Thyristor/Diode and Thyristor/Thyristor

(MAGN-A-PAKTM Power Modules), 200 A

1E4

10 jou les pe r p ulse

5

2.5

1

1E3

1E2

VSK.F200.. Se ries

Peak On-sta te Current (A)

1E1

1E11E21E31E4

tp

Si n us o i d a l p u l se

0.5

0.25

0.1

0.05

Pu lse Ba se w id t h ( µs)

Fig. 14 - Maximum On-State Energy Power Loss Characteristics

100

Rectangular gate pulse
a) Recommended load line for
rated d i/d t : 10V, 10ohms
b) Recommended load line for

<=30% rated di/dt : 10V, 20ohms

10

1

VGD

Inst a nta n e ous Ga te Vol t ag e (V)

0.1

0.01 0.1 1 10 100

IGD

1E4

(b)

T

Tj = 1 25 ° C

j=25 °C

In st a n t a n eo u s G a t e C ur re n t (A )

Fig. 15 - Gate Characteristics

Vishay High Power Products

0.5

0.25

0.1

0.05

VSK.F200.. Se ries
Trapezoidal pulse
di/dt 50A/µs

tp

E1 1 E2 1 E3 1 E4

1E1

Pu lse Ba se w i dt h ( µs)

(1) PGM = 8W, tp = 25ms
(2) PGM = 20W, tp = 1ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 80W, tp = 2.5ms

(a)

Tj= - 4 0 ° C

(1)

(2)

(3)

VSK.F200.. Series Frequency Limited by PG(AV)

1

(4)

10 jou les per p ulse

5

2.5

ORDERING INFORMATION TABLE

Device code

Note

• To order the optional hardware go to www.vishay.com/doc?95172

Document Number: 94422 For technical questions, contact: [e-mail]
Revision: 03-Jun-08 7

VSK T F 200 - 12 H K P

324

1 - Module type

2 - Circuit configuration

3

- Fast SCR

4

- Current rating: I

x 10 rounded

T(AV)

5 - Voltage code x 100 = V

6 - dV/dt code: H ≤ 400 V/µs

7 -tq code: K ≤ 20 µs

J ≤ 25 µs

8 - Lead (Pb)-free

51

678

(see Voltage Ratings table)

RRM

www.vishay.com

VSK.F200..P Series

Vishay High Power Products

Fast Thyristor/Diode and Thyristor/Thyristor

(MAGN-A-PAKTM Power Modules), 200 A

CIRCUIT CONFIGURATION

+

~

-

VSKLF...

~

+

-

VSKUF...

~

+

-

+

-

-

G1

K1

+

-

-

G2

VSKVF...

K2

LINKS TO RELATED DOCUMENTS

VSKKF...

-

-

+

+

+

+

G1

G2

K2

K1

+

-

-

~

+

-

G2

K2

VSKHF...

~

+

-

G1

K1

VSKTF...

~

+

-

G1

K1

Dimensions http://www.vishay.com/doc?95086

G2

VSKNF...

+

-

-

K2

-

+

+

+

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94422

8 Revision: 03-Jun-08