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Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK
MAGN-A-PAK
PRODUCT SUMMARY
I
T(AV)
TM
200 A
VSK.F200..P Series
Vishay High Power Products
TM
Power Modules), 200 A
FEATURES
• Fast turn-off thyristor
• Fast recovery diode
• High surge capability
• Electrically isolated baseplate
• 3500 V
• Industrial standard package
• Lead (Pb)-free
• Designed and qualified for industrial level
DESCRIPTION
This series of MAGN-A-PAKTM modules are intended
for applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and others
where fast switching characteristics are required.
isolating voltage
RMS
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
2
I
√t 2900 kA2√s
t
q
t
rr
V
DRM/VRRM
T
J
T
C
50 Hz 7600
60 Hz 8000
50 Hz 290
60 Hz 265
Range - 40 to 125 °C
200 A
85 °C
444
20/25
2
up to 1200 V
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
, MAXIMUM REPETITIVE
BLOCKING VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
TYPE NUMBER
VSK.F200-
V
RRM/VDRM
VOLTAGE
CODE
08 800 800
12 1200 1200
PEAK REVERSE AND OFF-STATE
A
kA2s
µs
I
RRM/IDRM
AT TJ = 125 °C
mA
50
Document Number: 94422 For technical questions, contact: ind-modules@vishay.com
Revision: 03-Jun-08 1
www.vishay.com
VSK.F200..P Series
Vishay High Power Products
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAKTM Power Modules), 200 A
CURRENT CARRYING CAPABILITY
I
FREQUENCY UNITS
180° el
TM
180° el
50 Hz 380 560 630 850 2460 3180
400 Hz 460 690 710 1060 1570 2080
2500 Hz 310 450 530 760 630 860
5000 Hz 250 360 410 560 410 560
10 000 Hz 180 280 300 410 - -
Recovery voltage V
r
Voltage before turn-on V
d
50 50 50 50 50 50
80 % V
DRM
80 % V
Rise of on-state current dI/dt 5050----A/µs
Case temperature 85 60 85 60 85 60 °C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 Ω/µF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
Maximum RMS on-state current I
Maximum peak, one-cycle
non-repetitive on-state,
surge current
2
Maximum I
Maximum I
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 2900 kA2√s
Low level value or threshold voltage V
High level value of threshold voltage V
Low level value on-state slope resistance r
High level value on-state slope resistance r
Maximum on-state voltage drop V
Maximum holding current I
Maximum latching current I
I
T(AV)
T(RMS)
I
TSM
T(TO)1
T(TO)2
t1
(I > π x I
t2
TM
H
L
180° conduction, half sine wave
As AC switch 444
t = 10 ms
t = 8.3 ms 8000
t = 10 ms
t = 8.3 ms 6700
t = 10 ms
t = 8.3 ms 265
t = 10 ms
t = 8.3 ms 187
(16.7 % x π x I
T
= TJ maximum
J
(I > π x I
T(AV)
(16.7 % x π x I
= TJ maximum
T
J
T(AV)
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
< I < π x I
T(AV)
< I < π x I
< I < π x I
T(AV)
< I < π x I
T(AV)
T(AV)
Ipk = 600 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.73 V
TJ = 25 °C, IT > 30 A 6000
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, Ig = 1A 1000
DRM
I
TM
100 µs
80 % V
DRM
I
TM
200 A
85 °C
7600
RRM
RRM
T(AV)
Sinusoidal
half wave,
initial T
),
= 125 °C
J
6400
290
205
1.18
), TJ = TJ maximum 1.25
),
T(AV)
0.74
), TJ = TJ maximum 0.70
A
V
A
kA2s
V
mΩ
mA
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 94422
2 Revision: 03-Jun-08