C&H Technology VSKDU300-06PbF User Manual
6121 Baker Road,
Suite 108
Minnetonka, MN 55345
www.chtechnology.com
Phone (952) 933-6190
Fax (952) 933-6223
1-800-274-4284
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Application
Assembly
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Phone – 1-800-274-4284
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www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com
INT-A-PAK Power Modules Ultrafast Diodes, 300 A
INT-A-PAK
PRODUCT SUMMARY
I
at T
F(AV)
C
V
R
t
(typical) 130 ns
rr
at T
I
F(DC)
C
300 A at 48 °C
600 V
230 A at 100 °C
VSKDU300/06PbF
Vishay Semiconductors
FEATURES
• Electrically insulated by DBC ceramic
• 3500 V
• Standard JEDEC package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Case style INT-A-PAK
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
isolating voltage
RMS
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Continuous forward current per leg I
Single pulse forward current I
Maximum power dissipation per leg P
Operating junction and storage
temperature range
RMS insulation voltage V
T
J
FSM
, T
INS
R
F
D
TC = 25 °C 435
= 100 °C 230
C
Limited by junction temperature TBD
TC = 25 °C 781
T
= 100 °C 313
C
Stg
50 Hz, circuit to base,
all terminals shorted, t = 1 s
600 V
AT
W
- 40 to 150 °C
3500 V
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
Forward voltage drop per leg V
Maximum reverse leakage current I
BR
FM
RM
IR = 500 μA 600 - -
IF = 150 A - 1.23 1.53
I
= 300 A - 1.43 1.96
F
I
= 150 A, TJ = 125 °C - 1.11 1.29
F
= 300 A, TJ = 125 °C - 1.39 1.73
I
F
TJ = 150 °C, VR = 600 V - - 50 mA
V
Document Number: 94549 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 19-May-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
VSKDU300/06PbF
Vishay Semiconductors
INT-A-PAK Power Modules
Ultrafast Diodes, 300 A
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
Peak rate of recovery current dI
Softness factor per leg s
(rec)M
rr
rr
TJ = 25 °C
T
= 125 °C - 195 260
J
TJ = 25 °C - 11 18
T
= 125 °C - 20 30
J
TJ = 25 °C - 670 1485
rr
T
= 125 °C - 1800 3900
J
/dt TJ = 125 °C - - 400 A/μs
= 50 A, TJ = 25 °C, dI/dt = 400 A/μs, VR = 200 V - 0.2 -
I
F
I
= 50 A, TJ = 125 °C, dI/dt = 400 A/μs, VR = 200 V - 0.22 -
F
= 50 A
I
F
dI/dt = 200 A/μs
V
= 400 V (per leg)
R
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating and
storage temperature range
Maximum thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink
Mounting
torque ± 10 %
Approximate weight
Case style INT-A-PAK
to heatsink
busbar
T
, T
J
Stg
R
thJC
R
thCS
DC operation 0.16
Mounting surface, flat, smooth and greased 0.05
A mounting compound is recommended and the
torque should be rechecked after a period of 3 hours
to allow the spread of the compound.
- 130 165
- 40 to 150 °C
K/W
4 to 6 Nm
200 g
7.1 oz.
ns
A
nC
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94549
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 19-May-10
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