C&H Technology VSKDU300-06PbF User Manual

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1-800-274-4284
Thank you for downloading this document from C&H Technology, Inc.
Please contact the C&H Technology team for the following questions -
Technical
Application
Assembly
Availability
Pricing
Phone – 1-800-274-4284
E-Mail – sales@chtechnology.com
www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com
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INT-A-PAK Power Modules Ultrafast Diodes, 300 A
INT-A-PAK
PRODUCT SUMMARY
I
at T
F(AV)
C
V
R
t
(typical) 130 ns
rr
at T
I
F(DC)
C
300 A at 48 °C
600 V
230 A at 100 °C
VSKDU300/06PbF
Vishay Semiconductors
FEATURES
• Electrically insulated by DBC ceramic
• 3500 V
• Standard JEDEC package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Case style INT-A-PAK
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
isolating voltage
RMS
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Continuous forward current per leg I
Single pulse forward current I
Maximum power dissipation per leg P
Operating junction and storage temperature range
RMS insulation voltage V
T
J
FSM
, T
INS
R
F
D
TC = 25 °C 435
= 100 °C 230
C
Limited by junction temperature TBD
TC = 25 °C 781
T
= 100 °C 313
C
Stg
50 Hz, circuit to base, all terminals shorted, t = 1 s
600 V
AT
W
- 40 to 150 °C
3500 V
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
Forward voltage drop per leg V
Maximum reverse leakage current I
BR
FM
RM
IR = 500 μA 600 - -
IF = 150 A - 1.23 1.53
I
= 300 A - 1.43 1.96
F
I
= 150 A, TJ = 125 °C - 1.11 1.29
F
= 300 A, TJ = 125 °C - 1.39 1.73
I
F
TJ = 150 °C, VR = 600 V - - 50 mA
V
Document Number: 94549 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 19-May-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
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VSKDU300/06PbF
Vishay Semiconductors
INT-A-PAK Power Modules
Ultrafast Diodes, 300 A
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
Peak rate of recovery current dI
Softness factor per leg s
(rec)M
rr
rr
TJ = 25 °C
T
= 125 °C - 195 260
J
TJ = 25 °C - 11 18
T
= 125 °C - 20 30
J
TJ = 25 °C - 670 1485
rr
T
= 125 °C - 1800 3900
J
/dt TJ = 125 °C - - 400 A/μs
= 50 A, TJ = 25 °C, dI/dt = 400 A/μs, VR = 200 V - 0.2 -
I
F
I
= 50 A, TJ = 125 °C, dI/dt = 400 A/μs, VR = 200 V - 0.22 -
F
= 50 A
I
F
dI/dt = 200 A/μs V
= 400 V (per leg)
R
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating and storage temperature range
Maximum thermal resistance, junction to case per leg
Typical thermal resistance, case to heatsink
Mounting torque ± 10 %
Approximate weight
Case style INT-A-PAK
to heatsink
busbar
T
, T
J
Stg
R
thJC
R
thCS
DC operation 0.16
Mounting surface, flat, smooth and greased 0.05
A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow the spread of the compound.
- 130 165
- 40 to 150 °C
K/W
4 to 6 Nm
200 g
7.1 oz.
ns
A
nC
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94549 2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 19-May-10
Page 4
VSKDU300/06PbF
INT-A-PAK Power Modules
Vishay Semiconductors
Ultrafast Diodes, 300 A
1000
TJ = 150 °C
100
TJ = 25 °C
10
1
- Instantaneous Forward Current (A)
F
I
94549_01
0 0.5 1.0 1.5 2.52.0 3.0 3.5
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
160
140
120
100
80
60
40
Square wave (D = 0.50)
20
Allowable Case Temperature (°C)
0
94549_03
0
I
F(AV)
200100 300 400
- Average Forward Current (A)
Fig. 3 - Maximum Allowable Case Temperature vs. Average Forward Current
100
TJ = 150 °C
10
1
0.1
- Reverse Current (mA)
0.01
R
I
0.001 100 200 300 500400 600
94549_02
DC
VR - Reverse Voltage (V)
500
TJ = 25 °C
Reverse Voltage
1
0.1
D = 0.50
0.01
- Thermal Impedance (°C/W)
thJC
Z
0.001
0.00001
94549_04
Single pulse
(thermal resistance)
0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01
Characteristics
thJC
10
Document Number: 94549 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 19-May-10 DiodesAmericas@vishay.com
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Page 5
VSKDU300/06PbF
Vishay Semiconductors
900
800
700
600
500
400
300
200
Average Power Loss (W)
100
94549_05
0
0
I
- Average Forward Current (A)
F(AV)
Fig. 5 - Forward Power Loss Characteristics
1000
VR = 400 V
300 400200100
RMS limit
D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC
INT-A-PAK Power Modules
Ultrafast Diodes, 300 A
10 000
VR = 400 V
1000
(nC)
rr
Q
IF = 50 A, TJ = 25 °C
94549_07
100
100
Fig. 7 - Typical Reverse Recovery Charge vs.
100
VR = 400 V
500
dIF/dt (A/μs)
/dt (Per Leg)
dI
F
1000
(ns)
rr
t
94549_06
100
IF = 50 A, TJ = 25 °C
10
100
dIF/dt (A/μs)
Fig. 6 - Typical Reverse Recovery Time vs.
dI
/dt (Per Leg)
F
1000
(A)
rr
I
94549_08
10
IF = 50 A, TJ = 25 °C
1
100
dIF/dt (A/μs)
Fig. 8 - Typical Reverse Recovery Current vs.
dI
/dt (Per Leg)
F
1000
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94549 4 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 19-May-10
Page 6
VSKDU300/06PbF
ORDERING INFORMATION TABLE
Device code
VSK D U 300 / 06 PbF
1
2
3
4
5
6
CIRCUIT CONFIGURATION
INT-A-PAK Power Modules
Ultrafast Diodes, 300 A
- Module type
- Circuit configuration:
D = Doubler, 2 diodes in series
- U = Ultrafast diode
- Current rating (300 = 300 A)
- Voltage rating (06 = 600 V)
- PbF = Lead (Pb)-free
(1)
~
Vishay Semiconductors
51324
6
+
(2)
-
(3)
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95254
Document Number: 94549 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 19-May-10 DiodesAmericas@vishay.com
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Page 7
DIMENSIONS in millimeters (inches)
17 (0.67)
23 (0.91)
23 (0.91)
3 screws M6 x 10
66 (2.60)
94 (3.70)
35 (1.38)
14.5 (0.57)
1
2
3
5
4
37 (1.44)
80 (3.15)
Ø 6.5 (Ø 0.25)
30 (1.18)
9 (0.33)
28 (1.10)
7
6
Outline Dimensions
Vishay Semiconductors
INT-A-PAK DBC
www.vishay.com
Document Number: 95254 For technical questions, contact: indmodules@vishay.com Revision: 11-Dec-07 1
Page 8
Legal Disclaimer Notice
www.vishay.com
Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000
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