C&H Technology VSKDS401-045 User Manual

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ADD-A-PAK

Power Modules Schottky Rectifier, 200 A

PRODUCT SUMMARY

I

F(AV)

ADD-A-PAK Generation VII

FEATURES

• 175 °C TJ operation

• Low forward voltage drop

• High frequency operation

• Low thermal resistance

• UL pending

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified for industrial level

BENEFITS

• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate

• High surge capability

200 A

• Easy mounting on heatsink

VSKDS401/045

Vishay Semiconductors

ELECTRICAL DESCRIPTION

MECHANICAL DESCRIPTION

The ADD-A-PAK generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.

The VSKDS401.. Schottky rectifier doubler has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation up
to 175 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

I

FSM

V

T

RRM

F

J

Rectangular waveform 200 A

45 V

tp = 5 μs sine 29 000 A

100 Apk, TJ = 125 °C 0.52 V

Range - 55 to 175 °C

VOLTAGE RATINGS

PARAMETER SYMBOL VSKDS401/045 UNITS

Maximum DC reverse voltage V

Maximum working peak reverse voltage V

R

RWM

45 V

Revision: 09-Jan-12

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Document Number: 94641

VSKDS401/045

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ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current

Non-repetitive avalanche energy E

Repetitive avalanche current I

F(AV)

I

FSM

AR

50 % duty cycle at TC = 120 °C, rectangular waveform 200

5 µs sine or 3 µs rect. pulse

10 ms sine or 6 ms rect. pulse 3450

TJ = 25 °C, IAS = 24 A, L = 1 mH 270 mJ

AS

Current decaying linearly to zero in 1 μs
Frequency limited by T

maximum VA = 1.5 x VR typical

J

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

200 A

Maximum forward voltage drop V

400 A 0.98

FM

200 A

400 A 0.96

Maximum reverse leakage current I

Maximum junction capacitance C

Typical series inductance L

RM

TJ = 25 °C

T

= 125 °C 180

J

VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 10 300 pF

T

Measured lead to lead 5 mm from package body 5.0 nH

S

Maximum voltage rate of change dV/dt Rated V

Maximum RMS insulation voltage V

INS

50 Hz

R

T

J

T

J

V

R

Vishay Semiconductors

Following any rated
load condition and with
rated V

RRM

applied

= 25 °C

= 125 °C

= Rated V

R

29 000

40 A

0.72

0.69

20

10 000 V/µs

3000 (1 min)

3600 (1 s)

A

V

mA

V

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case per leg

Typical thermal resistance,
case to heatsink per module

Approximate weight

to heatsink

Mounting torque ± 10 %

busbar 3

Case style JEDEC TO-240AA compatible

Revision: 09-Jan-12

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T

, T

J

Stg

DC operation 0.26

R

thJC

R

thCS

A mounting compound is recommended and the torque
should be rechecked after a period of 3 h to allow for the
spread of the compound.

2

, [e-mail], [e-mail]

- 55 to 175 °C

°C/W

0.1

75 g

2.7 oz.

4

Document Number: 94641

Nm

VSKDS401/045

V

FM -

Forward Voltage Drop (V)

I

F

- Instantaneous Forward Current (A)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

1

10

100

1000

TJ = 25 °C

TJ = 125 °C

TJ = 175 °C

www.vishay.com

10 000

1000

100

- Reverse Current (mA)

R

0.01

I

0.001

Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

10 000

TJ = 175 °C

10

1

0.1

0 10 20 30 40 50

Vishay Semiconductors

150 °C

125 °C

100 °C

75 °C

50 °C

25 °C

VR - Reverse Voltage (V)

Reverse Voltage

1

0.1

0.01

Thermal Impedance (°C/W)

-

thJC

Z

0.001
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02

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D = 0.75
D = 0.5

D = 0.33
D = 0.25
D = 0.2

TJ = 25 °C

Junction Capacitance (pF)

-

T

C

1000

10 20 30 40 50 60 80

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs.

Reverse Voltage

Single Pulse

(Thermal Resistance)

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance Z

3

Characteristics

thJC

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I

F(AV) -

Average Forward Current (A)

Allowable Case Temperature (°C)

0 100 200 300 400 500 600

0

50

100

150

200

DC

Square wave (D = 0.50)
80 % rated V

R

applied

see note (1)

I

FSM

- Non-Repetitive Surge Current (A)

tp - Square Wave Pulse Duration (μs)

1000

10 000

100 000

10 100 1000 10 000

At Any Rated Load Condition
And With Rated V

RRM

Applied

Following Surge

250

200

150

100

D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20

VSKDS401/045

Vishay Semiconductors

RMS limit

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

Fig. 7 - Maximum Non-Repetitive Surge Current

50

Average Power Loss (W)

0

0 50 100 150 200 250 300

I

Average Forward Current (A)

F(AV) -

Fig. 6 - Forward Power Loss Characteristics

DC

Note

(1)

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V

REV

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L

High-speed

switch

Freewheel

diode

40HFL40S02

= 25 V

V

d

+

Current
monitor

x VFM at (I

F(AV)

REV

D.U.T.

) x R

IRFP460

R

= 25 Ω

g

Fig. 8 - Unclamped Inductive Test Circuit

;

thJC

/D) (see fig. 6);

F(AV)

R

4

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Document Number: 94641

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1

- Vishay Semiconductors product

2 - Circuit configuration:

3 - S = Schottky diode

4

- Average rating (x 10)

5 - Product silicon identification

6 - Voltage rating (045 = 45 V)

KD = ADD-A-PAK - 2 diodes in series

Device code

51 32 4 6

VS KD S 40 1 / 045

(1)

~

(3)

-

(2)

+

ORDERING INFORMATION TABLE

CIRCUIT CONFIGURATION

VSKDS401/045

Vishay Semiconductors

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95369

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Document Number: 94641

ADD-A-PAK Generation VII - Diode

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay Semiconductors

Viti M5 x 0.8

Screws M5 x 0.8

18 (0.7) REF.

35 REF.

22.6 ± 0.2

30 ± 0.5

29 ± 0.5

(1 ± 0.020)

(1.18 ± 0.020)

(0.89 ± 0.008)

6.3 ± 0.2 (0.248 ± 0.008)

80 ± 0.3 (3.15 ± 0.012)

1

15 ± 0.5 (0.59 ± 0.020)

20 ± 0.5 (0.79 ± 0.020)

92 ± 0.75 (3.6 ± 0.030)

2

20 ± 0.5 (0.79 ± 0.020)

3

6.7 ± 0.3 (0.26 ± 0.012)

24 ± 0.5

(1 ± 0.020)

4 5 7 6

Document Number: 95369 For technical questions, contact: [e-mail]
Revision: 11-Nov-08 1

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VISHAY SEMICONDUCTORS

Modules

Mounting Instructions for

ADD-A-PAK Generation VII

Generation VII ADD-A-PAK (AAP) power modules combine
the excellent thermal performance enabled by a direct
bonded copper (Al2O3) substrate, superior mechanical
ruggedness, and an environmentally friendly manufacturing
process that eliminates the use of hard molds, thus reducing
direct stresses on the leads. To prevent axial pull-out, the
electrical terminals are co-molded to the module housing.

The VSK series of AAP modules uses glass passivated and
Schottky power diodes and thyristors in circuit
configurations including common anode, common cathode,
half-bridge, and single switch. The semiconductors are
internally connected through wire-bonding and electrically
isolated from the bottom baseplate, allowing the use of a
common heatsink and enabling a more compact overall
assembly.

INTRODUCTION

Major AAP Generation VII module features

• High blocking voltage up to 1600 V

• Industrial standard package style, fully compatible with
TO-240AA

• High isolation capability up to V

• High surge capability with I

• No toxic material: Completely lead (Pb)-free, RoHS and
UL compliant

• Elimination of copper base plate reduces weight to 75 g

• Elimination of process steps requiring usage of chemicals
and related waste treatment promotes a cleaner and more
environmentally friendly manufacturing process

These features allow AAP Generation VII modules to fit into
existing standardized assembly processes. Important
factors in the assembly process include

•Heatsink design

• PCB, busbar, and cable design

• Power leads size/area

• Distance from adjacent heat-generating parts

The implications of these items and the requirements for
assembly of AAP Generation VII modules are discussed
over the following pages.

FSM

= 3500 V

RMS

up to 3000 A

Application Note

SPECIFYING THE HEATSINK

The heat generated by the module has to be dissipated with
a heatsink. Typically natural or forced air cooling is used.

To optimize the device performance, the contact surface of
the heatsink must be flat, with a recommended flatness of
 0.03 mm ( 1.18 mils) and a levelling depth of less than

0.02 mm ( 0.79 mils), according to DIN/ISO 1302. A milled
or machined surface is generally satisfactory if prepared
with tools in good working condition. The heatsink mounting
surface must be clean, with no dirt, corrosion, or surface
oxide. It is very important to keep the mounting surface free
from particles exceeding 0.05 mm (2 mils) in thickness,
provided a thermal compound is used.

MOUNTING OPERATIONS

The AAP Generation VII modules are designed with an
exposed DBC Al2O3 substrate.

This is used to optimize the thermal behavior of the module.
To reduce the risk of damage during mounting, the ceramic
has been given additional mechanical ruggedness in the
form of two separate 15.8 mm by 21.1 mm (0.62" by 0.83")
pieces of DBC substrate, which can be seen in the photo
below.

APPLICATION NOTE

Before mounting, inspect the module to insure that the
contact surface of the bottom substrate is clean and free of
any lumps or bulges that could damage the device or
impede heat transfer across its surface.

Document Number: 95043 For technical questions, contact: [e-mail]
Revision: 17-Dec-08 1

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Application Note

Vishay Semiconductors

Mounting Instructions for

ADD-A-PAK Generation VII

Next, make a uniform coating on the heatsink mounting
surfaces and module substrate with a good quality thermal
compound. Screen printing of the compound is
recommended, as well as direct application through a roller
or spatula. The datasheet values for thermal resistance
assume a uniform layer of thermal compound with a
maximum thickness of 0.08 mm. The thermal conductivity of
the compound should be no less than 0.5 W/mK. Apply
uniform pressure on the package to force the compound to
spread over the entire contact area, and check the device
bottom surface to verify full and uniform coverage.

Bolt the module to the heatsink using the two fixing holes.

An even amount of torque should be applied for each
individual mounting screw. An M6 screw should be used
with lock washers. A torque wrench, which is accurate in the
specified range, must be used in mounting the module to
achieve optimum results. The first mounting screw should
be tightened to one third of the recommended torque; the
second screw should then be tightened to the same torque.
Full tightening of both the screws can then be completed by
applying the recommended torque (see data in bulletins).
Over-tightening the mounting screw may lead to
deformation of the package, which would hence increase
the thermal resistance and damage the semiconductors.
After a period of three hours, check the torque with a final
tightening in opposite sequence to allow the spread of the
compound.

Power terminals can be screwed to busbars and/or flexible
cables with eyelets.

We recommend the use of M5 screws with spring washers.
Users should consult published datasheets to determine the
optimal torque.

AAP Generation VII modules are designed to guarantee a
good and reliable contact even at 3 ± 10 % Nm on a busbar,
so there is no need to apply an especially high level of force
to obtain a good and reliable connection.

SOLDERING TO THE PCB

The signal terminal (gate and auxiliary cathode) pins of AAP
Gen VII modules based on thyristors can be soldered to the
PCB using hand iron or wave soldering processes.

The PCB should be designed with appropriate tolerances on
the hole diameters, and soldering must be done without
imposing any mechanical stress on the module pins (pulling
and tensioning the pins).

To prevent overheating of the device, the soldering time
should not exceed 8 s to 10 s at a temperature of 260 °C.

Alternatively, a fast-on cable connector can be used to
contact the signal pins.

APPLICATION NOTE

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Document Number: 95043

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Disclaimer

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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Revision: 12-Mar-12

1

Document Number: 91000