C&H Technology VSKDS220-030 User Manual
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Suite 108
Minnetonka, MN 55345
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Phone (952) 933-6190
Fax (952) 933-6223
1-800-274-4284
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Please contact the C&H Technology team for the following questions -
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Phone – 1-800-274-4284
E-Mail – sales@chtechnology.com
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www.vishay.com
ADD-A-PAK
Power Modules Schottky Rectifier, 110 A
PRODUCT SUMMARY
I
F(AV)
ADD-A-PAK Generation VII
FEATURES
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
• Low thermal resistance
• UL pending
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
• High surge capability
110 A
• Easy mounting on heatsink
VSKDS220/030
Vishay Semiconductors
ELECTRICAL DESCRIPTION
MECHANICAL DESCRIPTION
The ADD-A-PAK generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.
The VSKDS220.. Schottky rectifier doubler has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation up
to 150 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 110 A
30 V
tp = 5 μs sine 18 000 A
110 Apk, TJ = 125 °C 0.57 V
Range - 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VSKDS220/030 UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
30 V
Revision: 05-Jan-12
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94639
VSKDS220/030
www.vishay.com
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy E
Repetitive avalanche current I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 110 °C, rectangular waveform 110
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 2000
TJ = 25 °C, IAS = 15 A, L = 1 mH 99 mJ
AS
Current decaying linearly to zero in 1 μs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
110 A
Maximum forward voltage drop V
220 A 0.78
FM
110 A
220 A 0.82
Maximum reverse leakage current I
Maximum junction capacitance C
Typical series inductance L
RM
TJ = 25 °C
T
= 125 °C 650
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 7400 pF
T
Measured lead to lead 5 mm from package body 7.0 nH
S
Maximum voltage rate of change dV/dt Rated V
Maximum RMS insulation voltage V
INS
50 Hz
R
T
J
T
J
V
R
Vishay Semiconductors
Following any rated
load condition and with
rated V
RRM
applied
= 25 °C
= 125 °C
= Rated V
R
18 000
0.59
0.57
10 000 V/µs
3000 (1 min)
3600 (1 s)
22 A
10
mA
A
V
V
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink per module
Approximate weight
to heatsink
Mounting torque ± 10 %
busbar 3
Case style JEDEC TO-240AA compatible
Revision: 05-Jan-12
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
T
, T
J
Stg
DC operation 0.52
R
thJC
R
thCS
A mounting compound is recommended and the torque
should be rechecked after a period of 3 h to allow for the
spread of the compound.
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
- 55 to 150 °C
0.1
75 g
2.7 oz.
4
Document Number: 94639
°C/W
Nm
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