C&H Technology VSK56PbF User Manual

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Thyristor/Diode and Thyristor/Thyristor

(ADD-A-PAK

VSK.41, .56..PbF Series

Vishay High Power Products

TM

Generation 5 Power Modules), 45/60 A

FEATURES

• High voltage

ADD-A-PAK

TM

PRODUCT SUMMARY

I

T(AV)

or I

F(AV)

45/60 A

MECHANICAL DESCRIPTION

The Generation 5 of ADD-A-PAKTM modules combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior mechanical
ruggedness, thanks to the insertion of a solid copper
baseplate at the bottom side of the device. The Cu baseplate
allows an easier mounting on the majority of heatsink with
increased tolerance of surface roughness and improved
thermal spread. The Generation 5 of AAP modules is
manufactured without hard mold, eliminating in this way any
possible direct stress on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop feature
already tested and proved as reliable on other Vishay HPP
modules.

• Industrial standard package

• Thick copper baseplate

RoHS

COMPLIANT

• UL E78996 approved

• 3500 V

isolating voltage

RMS

• Totally lead (Pb)-free

• Designed and qualified for industrial level

BENEFITS

• Up to 1600 V

• Fully compatible TO-240AA

• High surge capability

• Easy mounting on heatsink

DBC insulator

•Al

203

• Heatsink grounded

ELECTRICAL DESCRIPTION

These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VSK.41 VSK.56 UNITS

or I

I

T(AV)

F(AV)

I

O(RMS)

I

TSM,

I

FSM

2

I

t

2

I

√t 36.1 85.0 kA2√s

V

RRM

T

Stg

T

J

Document Number: 94419 For technical questions, contact: [e-mail]
Revision: 23-Apr-08 1

85 °C 45 60

As AC switch 100 135

50 Hz 850 1310

60 Hz 890 1370

50 Hz 3.61 8.50

60 Hz 3.30 7.82

Range 400 to 1600 V

- 40 to 125 °C

kA2s

www.vishay.com

A

VSK.41, .56..PbF Series

Vishay High Power Products

Thyristor/Diode and Thyristor/Thyristor

(ADD-A-PAKTM Generation 5 Power Modules),

45/60 A

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM

RRM

REPETITIVE PEAK

REVERSE VOLTAGE

TYPE NUMBER

VOLTAGE

CODE

V

04 400 500 400

06 600 700 600

08 800 900 800

VSK.41/.56

10 1000 1100 1000

12 1200 1300 1200

14 1400 1500 1400

16 1600 1700 1600

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VSK.41 VSK.56 UNITS

Maximum average on-state current
(thyristors)

Maximum average forward current
(diodes)

I

T(AV)

I

F(AV)

180° conduction, half sine wave,
T

= 85 °C

C

V

, MAXIMUM

RSM

NON-REPETITIVE PEAK

REVERSE VOLTAGE

V

V

, MAXIMUM REPETITIVE

DRM

PEAK OFF-STATE VOLTAGE,

GATE OPEN CIRCUIT

V

45 60

I

RRM,

I

DRM

AT 125 °C

mA

15

Maximum continuous RMS
on-state current, as AC switch

I

O(RMS)

Maximum peak, one-cycle
non-repetitive on-state
or forward current

Maximum I

Maximum I

Maximum value or threshold voltage V

2

t for fusing I2t

2

√t for fusing I2√t

T(TO)

Maximum value of on-state
slope resistance

Maximum peak on-state or
forward voltage

Maximum non-repetitive rate of
rise of turned on current

Maximum holding current I

Maximum latching current I

I

TSM

or

I

FSM

(2)

r

t

V

TM

V

FM

dI/dt

H

L

t = 10 ms

t = 8.3 ms 890 1370

t = 10 ms

t = 8.3 ms 750 1150

t = 10 ms

t = 8.3 ms 985 1520

t = 10 ms

t = 8.3 ms 3.30 7.82

t = 10 ms

t = 8.3 ms 2.33 5.53

t = 10 ms

t = 8.3 ms 4.03 9.60

(1)

t = 0.1 to 10 ms, no voltage reapplied 36.1 85.6 kA2√s

(2)

Low level

High level

Low level

High level

ITM = π x I

IFM = π x I

T

J

I

TM

(3)

(4)

(3)

(4)

T(AV)

F(AV)

= 25 °C, from 0.67 V

= π x I

, Ig = 500 mA, tr < 0.5 µs, tp > 6 µs

T(AV)

TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit

TJ = 25 °C, anode supply = 6 V, resistive load 400

or

I

(RMS)

No voltage
reapplied

100 % V
reapplied

T

= 25 °C

J

RRM

Sinusoidal
half wave,
initial T

= TJ maximum

J

I

(RMS)

100 135

850 1310

715 1100

940 1450

no voltage reapplied

No voltage
reapplied

100 % V

RRM

Initial T

= TJ maximum

J

reapplied

T

= 25 °C, no voltage reapplied

J

TJ = TJ maximum

TJ = TJ maximum

3.61 8.56

2.56 6.05

4.42 10.05

0.88 0.85

0.91 0.88

5.90 3.53

5.74 3.41

kA

mΩ

TJ = 25 °C 1.81 1.54 V

,

DRM

150 A/µs

200

mA

A

2

s

V

Notes

(1)I2

t for time tx = I2√t x √t

(2)

Average power = V

T(TO)

x

x I

+ rt x (I

T(AV)

T(RMS)

2

)

(3)

16.7 % x π x IAV < I < π x I

(4)

I > π x I

AV

AV

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94419

2 Revision: 23-Apr-08

VSK.41, .56..PbF Series

Thyristor/Diode and Thyristor/Thyristor

Vishay High Power Products

(ADD-A-PAKTM Generation 5 Power Modules),

45/60 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VSK.41 VSK.56 UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak gate current I

Maximum peak negative gate voltage - V

GM

G(AV)

GM

GM

TJ = - 40 °C

Maximum gate voltage required to trigger V

GT

T

= 25 °C 2.5

J

= 125 °C 1.7

T

J

Anode supply = 6 V
resistive load

TJ = - 40 °C

Maximum gate current required to trigger I

Maximum gate voltage that will not trigger V

Maximum gate current that will not trigger I

GT

GD

J

T

J

TJ = 125 °C, rated V

GD

TJ = 125 °C, rated V

= 25 °C 150

= 125 °C 80

Anode supply = 6 V
resistive load

applied 0.25 V

DRM

applied 6 mA

DRM

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VSK.41 VSK.56 UNITS

Maximum peak reverse and off-state
leakage current at V

RRM

, V

DRM

RMS insulation voltage V

Maximum critical rate of rise of off-state voltage dV/dt

Note

(1)

Available with dV/dt = 1000 V/ms, to complete code add S90 i.e. VSKT41/16AS90

I

RRM,

I

DRM

TJ = 125 °C, gate open circuit 15 mA

50 Hz, circuit to base, all terminals shorted

INS

(1)

TJ = 125 °C, linear to 0.67 V

DRM

10

2.5

2.5 A

10

4.0

270

2500 (1 min)

3500 (1 s)

500 V/µs

W

V

mAT

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VSK.41 VSK.56 UNITS

Junction operating and storage
temperature range

Maximum internal thermal resistance,
junction to case per module

Typical thermal resistance, case to heatsink R

to heatsink

Mounting torque ± 10 %

busbar 3

Approximate weight

T

, T

J

Stg

R

thJC

thCS

DC operation 0.23 0.20

Mounting surface flat, smooth and greased 0.1

A mounting compound is recommended and the
torque should be rechecked after a period of 3

- 40 to 125 °C

K/W

5

Nm

hours to allow for the spread of the compound.

110 g

4oz.

Case style JEDEC TO-240AA

ΔR CONDUCTION PER JUNCTION

DEVICES

VSK.41 0.11 0.13 0.17 0.23 0.34 0.09 0.14 0.18 0.23 0.34

VSK.56 0.09 0.11 0.13 0.18 0.27 0.07 0.11 0.14 0.19 0.28

Note

• Table shows the increment of thermal resistance R

Document Number: 94419 For technical questions, contact: [e-mail]
Revision: 23-Apr-08 3

SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION

180° 120° 90° 60° 30° 180° 120° 90° 60° 30°

when devices operate at different conduction angles than DC

thJC

www.vishay.com

UNITS

°C/W