C&H Technology VSK56 User Manual
6121 Baker Road,
Suite 108
Minnetonka, MN 55345
www.chtechnology.com
Phone (952) 933-6190
Fax (952) 933-6223
1-800-274-4284
Thank you for downloading this document from C&H Technology, Inc.
Please contact the C&H Technology team for the following questions -
Technical
Application
Assembly
Availability
Pricing
Phone – 1-800-274-4284
E-Mail – sales@chtechnology.com
www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
ADD-A-PAK
PRODUCT SUMMARY
I
or I
T(AV)
F(AV)
45 A/60 A
VSK.41.., VSK.56.. Series
Vishay High Power Products
FEATURES
• High voltage
• Industrial standard package
• UL pending
• Low thermal resistance
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
• Up to 1600 V
• High surge capability
MECHANICAL DESCRIPTION
• Easy mounting on heatsink
The ADD-A-PAK generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VSK.41 VSK.56 UNITS
I
or I
T(AV)
F(AV)
I
O(RMS)
I
TSM,
I
FSM
2
t
I
2
√t 36.1 72 kA2√s
I
V
RRM
T
Stg
T
J
85 °C 45 60
As AC switch 100 135
50 Hz 850 1200
60 Hz 890 1256
50 Hz 3.61 7.20
60 Hz 3.30 6.57
Range 400 to 1600 V
- 40 to 125 °C
A
kA2s
Document Number: 94630 For technical questions, contact: indmodules@vishay.com
Revision: 05-Aug-09 1
www.vishay.com
VSK.41.., VSK.56.. Series
Vishay High Power Products
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
, MAXIMUM
RRM
REPETITIVE PEAK
REVERSE VOLTAGE
TYPE NUMBER
VOLTAGE
CODE
V
04 400 500 400
06 600 700 600
VSK.41
VSK.56
08 800 900 800
10 1000 1100 1000
12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VSK.41 VSK.56 UNITS
Maximum average on-state current (thyristors) I
Maximum average forward current (diodes) I
Maximum continuous RMS on-state current,
as AC switch
Maximum peak, one-cycle non-repetitive
on-state or forward current
2
Maximum I
Maximum I
t for fusing I2t
2
√t for fusing I2√t
Maximum value or threshold voltage V
Maximum value of on-state
slope resistance
Maximum peak on-state or forward voltage
Maximum non-repetitive rate of rise of
turned on current
Maximum holding current I
Maximum latching current I
Notes
(1)I2
t for time tx = I2√t x √t
(2)
Average power = V
(3)
16.7 % x π x IAV < I < π x I
(4)
I > π x I
AV
T(TO)
x
x I
+ rt x (I
T(AV)
AV
T(RMS)
T(AV)
F(AV)
I
O(RMS)
I
TSM
or
I
FSM
(1)
(2)
T(TO)
(2)
r
t
V
TM
V
FM
dI/dt
H
L
2
)
V
, MAXIMUM
RSM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
180° conduction, half sine wave,
T
= 85 °C
C
or
I
(RMS)
t = 10 ms
t = 8.3 ms 890 1256
t = 10 ms
t = 8.3 ms 750 1056
t = 10 ms
t = 8.3 ms 3.30 6.57
t = 10 ms
t = 8.3 ms 2.33 4.56
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
= TJ maximum
T
J
Low level
High level
Low level
High level
ITM = π x I
IFM = π x I
T
J
I
TM
(3)
TJ = TJ maximum
(4)
(3)
TJ = TJ maximum
(4)
T(AV)
TJ = 25 °C 1.81 1.7 V
F(AV)
= 25 °C, from 0.67 V
= π x I
, Ig = 500 mA, tr < 0.5 µs, tp > 6 µs
T(AV)
DRM
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
V
, MAXIMUM REPETITIVE
DRM
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
I
(RMS)
Sinusoidal
half wave,
initial T
=
RRM
RRM
maximum
T
J
Initial T
T
maximum
J
J
=
J
,
45 60
100 135
850 1200
715 1000
3.61 7.20
2.56 5.10
36.1 72 kA
1.08 0.91
1.12 1.02
4.7 4.27
4.5 3.77
150 A/µs
200
TJ = 25 °C, anode supply = 6 V, resistive load 400 400
I
RRM,
I
DRM
AT 125 °C
mA
15
kA
mΩ
mA
A
2
s
2
√s
V
www.vishay.com For technical questions, contact: indmodules@vishay.com
Document Number: 94630
2 Revision: 05-Aug-09
VSK.41.., VSK.56.. Series
ADD-A-PAK Generation VII Power Modules
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor, 45 A/60 A
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VSK.41 VSK.56 UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak gate current I
Maximum peak negative gate voltage - V
GM
G(AV)
GM
GM
TJ = - 40 °C
Maximum gate voltage required to trigger V
GT
T
= 25 °C 2.5
J
T
= 125 °C 1.7
J
Anode supply = 6 V
resistive load
TJ = - 40 °C
Maximum gate current required to trigger I
Maximum gate voltage that will not trigger V
Maximum gate current that will not trigger I
GT
GD
GD
= 25 °C 150
J
= 125 °C 80
T
J
TJ = 125 °C, rated V
TJ = 125 °C, rated V
Anode supply = 6 V
resistive load
applied 0.25 V
DRM
applied 6 mA
DRM
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VSK.41 VSK.56 UNITS
Maximum peak reverse and off-state
leakage current at V
RRM
, V
DRM
Maximum RMS insulation voltage V
Maximum critical rate of rise of off-state voltage dV/dt T
I
RRM,
I
DRM
TJ = 125 °C, gate open circuit 15 mA
50 Hz
INS
= 125 °C, linear to 0.67 V
J
DRM
10
2.5
2.5 A
10
4.0
270
3000 (1 min)
3600 (1 s)
1000 V/µs
W
V
mAT
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VSK.41 VSK.56 UNITS
Junction operating and storage
temperature range
Maximum internal thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink per module
to heatsink
Mounting torque ± 10 %
busbar 3
Approximate weight
T
, T
J
Stg
R
thJC
DC operation 0.44 0.35
- 40 to 125 °C
°C/W
R
thCS
Mounting surface flat, smooth and greased 0.1
A mounting compound is recommended and the
torque should be rechecked after a period of
4
Nm
3 h to allow for the spread of the compound.
75 g
2.7 oz.
Case style JEDEC TO-240AA compatible
ΔR CONDUCTION PER JUNCTION
DEVICES
VSK.41.. 0.110 0.131 0.17 0.23 0.342 0.085 0.138 0.177 0.235 0.345
VSK.56.. 0.088 0.104 0.134 0.184 0.273 0.07 0.111 0.143 0.189 0.275
Note
• Table shows the increment of thermal resistance R
Document Number: 94630 For technical questions, contact: indmodules@vishay.com
Revision: 05-Aug-09 3
SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
when devices operate at different conduction angles than DC
thJC
www.vishay.com
UNITS
°C/W
Loading...