C&H Technology VSK500-PbF User Manual

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Thyristor/Diode and Thyristor/Thyristor

(SUPER MAGN-A-PAK

VSK.500-..PbF Series

Vishay High Power Products

TM

Power Modules), 500 A

FEATURES

• High current capability

• High surge capability

• Industrial standard package

• 3000 V

isolating voltage with non-toxic substrate

RMS

• Lead (Pb)-free

• Designed and qualified for industrial level

SUPER MAGN-A-PAK

TM

TYPICAL APPLICATIONS

• Motor starters

PRODUCT SUMMARY

I

or I

T(AV)

F(AV)

500 A

• DC motor controls - AC motor controls

• Uninterruptable power supplies

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

or I

I

T(AV)

F(AV)

I

T(RMS)

I

or I

TSM

FSM

2

I

t

2

I

√t 15 910 kA2√s

V

DRM/VRRM

T

Stg

T

J

T

C

T

C

50 Hz 17.8

60 Hz 18.7

50 Hz 1591

60 Hz 1452

Range

500 A

82 °C

785 A

82

kA2s

800 to 1600 V

- 40 to 150

- 40 to 130

°C

kA

°C

RoHS

COMPLIANT

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

TYPE NUMBER

VSK.500

Document Number: 94420 For technical questions, contact: [e-mail]
Revision: 20-Mar-08 1

VOLTAGE

CODE

08 800 900

12 1200 1300

14 1400 1500

16 1600 1700

RRM/VDRM

, MAXIMUM REPETITIVE

PEAK REVERSE VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM/IDRM

= TJ MAXIMUM

AT T

J

MAXIMUM

mA

100

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VSK.500-..PbF Series

Vishay High Power Products

Thyristor/Diode and Thyristor/Thyristor

(SUPER MAGN-A-PAKTM Power Modules), 500 A

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

Maximum peak, one-cycle,

I

I

T(RMS)

I

non-repetitive on-state surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 15 910 kA2√s

Low level value or threshold voltage V

High level value of threshold voltage V

Low level value on-state slope resistance r

High level value on-state slope resistance r

Maximum on-state or forward
voltage drop

Maximum holding current I

Maximum latching current I

T(AV),

F(AV)

180° conduction, half sine wave

180° conduction, half sine wave at TC = 82 °C 785 A

t = 10 ms

TSM,

I

FSM

t = 8.3 ms 18.7

t = 10 ms

t = 8.3 ms 15.7

t = 10 ms

t = 8.3 ms 1452

t = 10 ms

t = 8.3 ms 1027

T(TO)1

T(TO)2

V
V

(16.7 % x π x I
(I > π x I

(16.7 % x π x I

t1

(I > π x I

t2

TM

Ipk = 1500 A, TJ = 25 °C, tp = 10 ms sine pulse 1.50 V

FM

H

TJ = 25 °C, anode supply 12 V resistive load

L

No voltage
reapplied

100 % V
reapplied

RRM

Sinusoidal
half wave,

No voltage
reapplied

100 % V

RRM

initial T

= TJ maximum

J

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 0.93

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.32

T(AV)

), TJ = TJ maximum 0.85

T(AV)

), TJ = TJ maximum 0.36

T(AV)

500 A

82 °C

17.8

15.0

1591

1125

500

1000

kA

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum rate of rise of turned-on current dI/dt T

Typical delay time t

Typical turn-off time t

d

q

= TJ maximum, ITM = 400 A, V

J

applied 1000 A/µs

DRM

Gate current 1 A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

I

= 750 A; TJ = TJ maximum, dI/dt = - 60 A/µs,

TM

V

= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω

R

, TJ = 25 °C

DRM

2.0
µs

200

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise
of off-state voltage

RMS insulation voltage V

Maximum peak reverse and
off-state leakage current

dV/dt T

INS

I

RRM

I

DRM

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2 Revision: 20-Mar-08

= 130 °C, linear to VD = 80 % V

J

DRM

1000 V/µs

t = 1 s 3000 V

,

TJ = TJ maximum, rated V

DRM/VRRM

applied 100 mA

Document Number: 94420

VSK.500-..PbF Series

Thyristor/Diode and Thyristor/Thyristor

Vishay High Power Products

(SUPER MAGN-A-PAKTM Power Modules), 500 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum peak average gate power P

Maximum peak positive gate current +I

Maximum peak positive gate voltage +V

Maximum peak negative gate voltage -V

Maximum DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GM

G(AV)

GM

GM

GM

GT

GT

GD

GD

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to case per junction

Maximum thermal resistance,
case to heatsink

SMAP to heatsink

Mounting torque ± 10 %

busbar to SMAP 12-15

R

R

T

J

Stg

thJC

thC-hs

TJ = TJ maximum, tp ≤ 5 ms 10

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

3.0 A

TJ = TJ maximum, tp ≤ 5 ms

TJ = 25 °C, Vak 12 V

TJ = TJ maximum 10 mA

DC operation 0.065

A mounting compound is recommended and the
torque should be rechecked after a period of 3
hours to allow for the spread of the compound.

20

5.0

200 mA

3.0 V

0.25 V

- 40 to 130

- 40 to 150

0.02

6-8

W

°C

K/W

Nm

V

Approximate weight 1500 g

Case style See dimensions - link at the end of datasheet SUPER MAGN-A-PAK

ΔR

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

Note

• Table shows the increment of thermal resistance R

Document Number: 94420 For technical questions, contact: [e-mail]
Revision: 20-Mar-08 3

CONDUCTION

thJC

180° 0.009 0.006

120° 0.011 0.011

90° 0.014 0.015

60° 0.021 0.022

30° 0.037 0.038

when devices operate at different conduction angles than DC

thJC

T

= TJ maximum K/W

J

www.vishay.com

VSK.500-..PbF Series

Vishay High Power Products

130

120

110

100

90

80

70

60

Maximum Allowa ble Case Temp erature (°C)

0 100 200 300 400 500 600

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics

130

120

110

100

90

80

70

60

Maximum Allowable Case Temperature (°C)

0 100 200 300 400 500 600 700 800 900

Average On-state Current (A)

VSK.500.. Series
R (DC) = 0.065 K/ W

thJC

30°

60°

VSK.500.. Se ries
R (D C) = 0.065 K/ W

thJC

60°

30°

90°

120°

Conduction Angle

90°

120°

180°

Cond uction Perio d

180°

DC

Thyristor/Diode and Thyristor/Thyristor

(SUPER MAGN-A-PAKTM Power Modules), 500 A

1000

900

800

700

600

500

400

300

200

100

0

Maximum Average On-state Powe r Loss (W)

Fig. 4 - On-State Power Loss Characteristics

16000

15000

14000

13000

12000

11000

10000

9000

8000

Peak Ha lf Sine Wave On-state Current (A )

7000

Num be r O f Equa l Am plit ude Half Cy cle Curren t Pulses (N)

DC
180°
120°

90°

60°

30°

RM S Li m it

0 100 200 300 400 500 600 700 800

Average On-stat e Current (A)

At Any Rat ed Load Condition And With

Ra ted V Ap p lied Follow in g Sur g e .

RRM

VSK.500.. Se ries
Pe r Ju n c t io n

110100

Conduction Period

VSK.500. . Serie s
Pe r Ju nc t i o n
T = 1 30 ° C

J

Init ial T = 130°C

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

J

Fig. 2 - Current Ratings Characteristics

700

600

500

400

300

200

100

Maximum Average On-state Power Loss (W)

180°
120°

90°
60°
30°

RM S Li mi t

Conduc tion Angle

VSK.500.. Serie s
Pe r Ju nc t io n
T = 1 3 0° C

0

0 100 200 300 400 500

Average On-state Current (A)

J

Fig. 3 - On-State Power Loss Characteristics

Fig. 5 - Maximum Non-Repetitive Surge Current

18000

Maximum Non Re p et itive Surge Current

Versus Pulse Tra in Dura tion . Co nt ro l

Of Conduction May Not Be Maintained.

16000

14000

12000

10000

8000

VSK.500.. Serie s

Peak Half Sine Wave On-state Current (A)

Pe r Ju nc tio n

6000

0.01 0.1 1

Pulse Tra in Dura t io n ( s)

Init ial T = 130°C

No Vo lta g e Rea pplied
Ra t e d V Re a p p l i e d

J

RRM

Fig. 6 - Maximum Non-Repetitive Surge Current

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94420

4 Revision: 20-Mar-08

VSK.500-..PbF Series

Thyristor/Diode and Thyristor/Thyristor

(SUPER MAGN-A-PAKTM Power Modules), 500 A

750
700
650
600
550
500

Cond uctio n Angle

180°
120°

90°
60°
30°

450
400
350
300
250
200
150
100

50

Maximum Tota l On-stat e Pow er Loss (W)

0

0 100 200 300 400 500 600 700 800

VSK.500.. Se ries

Pe r Mo du le

T = 130°C

To t a l RM S O u t p u t C ur re n t ( A )

Fig. 7 - On-State Power Loss Characteristics

3000

180°

2500

2000

(Sine )

180°

(Rect)

1500

1000

2 x VSK.500. . Se rie s

500

Maximum Total Power Loss (W)

0

0 200 400 600 800 1000

Si n g l e Ph a se Br i d g e

Connected

T = 130°C

J

Total Output Current (A)

Fig. 8 - On-State Power Loss Characteristics

0

.1

0

.

2

K

0

.

3

K

0

.

4

K

0

.

6

K

J

0 20406080100120

Maximum Allowa ble Ambient Te mperat ure (°C)

0

.

0

0

.

0

5

0

.

0

8

0

.

1

2

0

.

2

020406080100120

Maximum Allowable Ambient Temperature (°C)

0

0

.

1

2

6

K

/

W

/

W

/

W

/

W

/

W

0

.

0

2

K

/

W

3

K

/

W

K

/

W

K

/

W

K

/

W

K

/

W

R

.

0

9

t

K

K

/

/

W

W

R

t

h

S

A

=

0

.

0

1

Vishay High Power Products

h

S

A

=

0

.

0

7

K

/

W

­D

e

l

t

a

R

K

/

W

­D

e

l

t

a

R

4500

4000

3500

(Rect )

3000

2500

2000

1500

1000

Maximum Total Power Loss (W)

500

0

0 250 500 750 1000 1250 1500

3 x VSK.500 .. Seri e s
Th r e e P h a s e Br id g e

Connected

T = 1 3 0 ° C

J

Total Output Current (A)

120°

R

t

h

S

A

=

0

.

0

.

0

0

.

0

3

0

.

0

0

.

0

8K

0

.

2

0

1

2

K

K

5

K

K

/

K

/

/

/

W

/

/

W

W

W

W

W

­D

e

l

t

a

R

0 20406080100120

Maximum Allowable Ambient Temperature (°C)

Fig. 9 - On-State Power Loss Characteristics

Document Number: 94420 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 20-Mar-08 5

VSK.500-..PbF Series

Vishay High Power Products

10000

1000

Insta ntaneous On-st at e Current (A)

100

0.5 1 1 .5 2 2.5 3 3. 5 4 4.5

Instantaneous On-state Voltage (V)

Fig. 10 - On-State Voltage Drop Characteristics Fig. 11 - Thermal Impedance Z

T = 25°C

J

T = 13 0 ° C

J

VSK.500. . Se rie s
Pe r J un c t i o n

100

Rectangular gate pulse

a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for

<=30% rated di/dt : 10V, 10ohms

10

tr<=1 µs

1

Instantaneous Gate Voltage (V)

0.1

0.001 0.01 0.1 1 1 0 1 00

VGD

IGD

Thyristor/Diode and Thyristor/Thyristor

(SUPER MAGN-A-PAKTM Power Modules), 500 A

0.1
VSK.500. . Serie s
Pe r Ju nc t io n

thJC

0.01

hermal Impedance Z (K/ W)

Tra n si e n t T

(1) PGM = 10W, t p = 4m s
(2) PGM = 20W, t p = 2m s
(3) PGM = 40W, t p = 1m s
(4) PGM = 60W, tp = 0.66ms

(a)

(b)

Tj = - 4 0 ° C

Tj =2 5 ° C

Tj =1 3 0 ° C

VSK.500.. Series Frequency Limited by PG(AV)

In st an t a ne o u s G a t e C u r r e nt ( A )

Fig. 12 - Gate Characteristics

0.001

0.001 0.01 0.1 1 10 100

Sq u a r e Wa v e Pu l se Du r a t i o n ( s)

(2) (3)

(1)

Steady State Value:

R = 0.065 K/ W

thJC

(DC Operation)

(4)

thJC

Characteristics

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Document Number: 94420

6 Revision: 20-Mar-08

VSK.500-..PbF Series

Thyristor/Diode and Thyristor/Thyristor

(SUPER MAGN-A-PAKTM Power Modules), 500 A

ORDERING INFORMATION TABLE

Device code

Note

• To order the optional hardware go to www.vishay.com/doc?95172

CIRCUIT CONFIGURATION

VSK T 500 - 16 PbF

1 - Module type

2

- Circuit configuration (see end of datasheet)

3 - Current rating

4 - Voltage code x 100 = V

5 - Lead (Pb)-free

Vishay High Power Products

51324

(see Voltage Ratings table)

RRM

VSKT

5 (G1)

3

1

~

+

2

-

7 (K2)4 (K1)

6 (G2)

VSKH

4 (K1)

5 (G1)

1

~

+

2

-

3

VSKL

1

2

3

~

+

-

7 (K2)

6 (G2)

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95283

Document Number: 94420 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 20-Mar-08 7