C&H Technology VSK320 User Manual
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VSK.250, .270, .320 Series
Vishay High Power Products
Standard Recovery Diodes, 250 to 320 A
(MAGN-A-PAK
MAGN-A-PAK
TM
TM
Power Modules)
FEATURES
• High voltage
• Electrically isolated base plate
• 3000 V
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL E78996 approved
• Lead (Pb)-free
• Designed and qualified for industrial level
isolating voltage
RMS
RoHS
COMPLIANT
DESCRIPTION
This new VSK series of MAGN-A-PAKsTM uses high
voltage power diodes in two basic configurations. The
PRODUCT SUMMARY
I
F(AV)
250 to 320 A
semiconductors are electrically isolated from the metal base,
allowing common heatsinks and compact assemblies to be
built. They can be interconnected to form single phase or
three phase bridges and the single diode module can be
used in conjunction with the thyristor modules as a freewheel
diode. These modules are intended for general purpose
applications such as battery chargers, welders and plating
equipment and where high voltage and high current are
required (motor drives, etc.).
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VSK.250.. VSK.270.. VSK.320.. UNITS
I
F(AV)
I
F(RMS)
I
FSM
2
I
t
2
I
√t 2460 3980 5110 kA2√s
V
RRM
T
J
T
C
50 Hz 7015 8920 10 110
60 Hz 7345 9430 10 580
50 Hz 246 398 511
60 Hz 225 363 466
250 270 320 A
100 100 100 °C
393 424 502
A
kA2s
Up to 2000 Up to 3000 Up to 2000 V
- 40 to 150 °C
Document Number: 93581 For technical questions, contact: ind-modules@vishay.com
Revision: 22-Apr-08 1
www.vishay.com
VSK.250, .270, .320 Series
Vishay High Power Products
Standard Recovery Diodes, 250 to 320 A
(MAGN-A-PAKTM Power Modules)
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
MAXIMUM REPETITIVE
TYPE NUMBER
VOLTAGE
CODE
RRM,
PEAK REVERSE VOLTAGE
V
04 400 500
VSK.250VSK.270VSK.320-
08 800 900
12 1200 1300
16 1600 1700
20 2000 2100
VSK.320-
24 2400 2500
30 3000 3100
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VSK.250 VSK.270 VSK.320 UNITS
Maximum average forward
current at case temperature
Maximum RMS forward current I
Maximum peak, one-cycle
forward, non-repetitive
surge current
2
Maximum I
Maximum I
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 2460 3980 5110 kA2√s
Low level value of
threshold voltage
High level value of
threshold voltage
Low level forward
slope resistance
High level forward
slope resistance
Maximum forward voltage drop V
I
F(AV)
F(RMS)
I
FSM
V
F(TO)1
V
F(TO)2
r
f1
(I > π x I
r
f2
FM
180° conduction, half sine wave
As AC switch 393 424 502
t = 10 ms
t = 8.3 ms 7345 9340 10 580
t = 10 ms
t = 8.3 ms 6180 7850 8900
t = 10 ms
t = 8.3 ms 225 363 466
t = 10 ms
t = 8.3 ms 159 257 330
(16.7 % x π x I
= TJ maximum
T
J
(I > π x I
(16.7 % x π x I
T
= TJ maximum
J
IFM = π x I
Average power = V
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
< I < π x I
F(AV)
), TJ = TJ maximum 0.92 0.87 0.86
F(AV)
< I < π x I
F(AV)
), TJ = TJ maximum 0.49 0.81 0.44
F(AV)
, TJ = TJ maximum, 180° conduction
F(AV)
F(TO)
x I
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
Sinusoidal half wave,
= TJ maximum
initial T
J
),
F(AV)
),
F(AV)
F(AV)
+ rf x (I
F(RMS)
)
V
250 270 320 A
100 100 100 °C
7015 8920 10 110
5900 7500 8500
246 398 511
174 281 361
0.79 0.74 0.69
0.63 0.94 0.59
2
1.29 1.48 1.28 V
I
MAXIMUM
RRM
AT 150 °C
mA
50
kA
mΩ
A
2
s
V
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak reverse leakage current I
RRM
RMS insulation voltage V
www.vishay.com For technical questions, contact: ind-modules@vishay.com
2 Revision: 22-Apr-08
TJ = 150 °C 50 mA
50 Hz, circuit to base, all terminals shorted, t = 1 s 3000 V
INS
Document Number: 93581
VSK.250, .270, .320 Series
Standard Recovery Diodes, 250 to 320 A
Vishay High Power Products
(MAGN-A-PAKTM Power Modules)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS
Maximum junction operating and storage
temperature range
Maximum thermal resistance,
junction to case per junction
Maximum resistance, case to heatsink
per module
MAP to heatsink
Mounting torque ± 10 %
busbar to MAP 8 to 10
Approximate weight
T
, T
J
Stg
R
thJC
R
thCS
DC operation 0.16 0.125
Mounting surface flat, smooth and greased 0.035
A mounting compound is recommended
and the torque should be rechecked
after a period of about 3 hours to allow for
the spread of the compound.
VSK.250 VSK.270 VSK.320
ΔR CONDUCTION PER JUNCTION
SINUSOIDAL CONDUCTION
MAXIMUM
AT T
DEVICE
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
VSK.250- 0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.021 0.033
VSK.320- 0.008 0.010 0.013 0.020 0.032 0.007 0.011 0.015 0.020 0.033
Note
• The table above shows the increment of thermal resistance R
J
when devices operate at different conduction angles than DC
thJC
RECTANGULAR CONDUCTION
AT TJ MAXIMUM
VALUES
- 40 to 150 °C
4 to 6
UNITS
K/W
Nm
800 g
30 oz.
UNITS
K/WVSK.270- 0.008 0.012 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033
Document Number: 93581 For technical questions, contact: ind-modules@vishay.com
Revision: 22-Apr-08 3
www.vishay.com
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