C&H Technology VSK26PbF User Manual

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Thyristor/Diode and Thyristor/Thyristor

TM

TM

Generation 5 Power Modules), 27 A

27 A

(ADD-A-PAK

ADD-A-PAK

PRODUCT SUMMARY

I

or I

T(AV)

F(AV)

MECHANICAL DESCRIPTION

The Generation 5 of ADD-A-PAKTM modules combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior mechanical
ruggedness, thanks to the insertion of a solid copper
baseplate at the bottom side of the device. The Cu baseplate
allows an easier mounting on the majority of heatsink with
increased tolerance of surface roughness and improved
thermal spread. The Generation 5 of AAP modules is
manufactured without hard mold, eliminating in this way any
possible direct stress on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop feature
already tested and proved as reliable on other Vishay HPP
modules.

VSK.26..PbF Series

Vishay High Power Products

FEATURES

• High voltage

• Industrial standard package

• Thick copper baseplate

• UL E78996 approved

• 3500 V

• Totally lead (Pb)-free

• Designed and qualified for industrial level

BENEFITS

• Up to 1600 V

• Fully compatible TO-240AA

• High surge capability

• Easy mounting on heatsink

•Al

203

• Heatsink grounded

ELECTRICAL DESCRIPTION

These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery chargers.

isolating voltage

RMS

DBC insulator

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

or I

T(AV)

F(AV)

I

O(RMS)

I

TSM,

I

FSM

2

I

t

2

I

√t 8000 A2√s

V

RRM

T

Stg

T

J

Document Number: 94418 For technical questions, contact: [e-mail]
Revision: 22-Apr-08 1

85 °C 27

As AC switch 60

50 Hz 400

60 Hz 420

50 Hz 800

60 Hz 730

Range 400 to 1600 V

- 40 to 125 °C

A2s

A

www.vishay.com

VSK.26..PbF Series

Vishay High Power Products

Thyristor/Diode and Thyristor/Thyristor

(ADD-A-PAKTM Generation 5 Power Modules), 27 A

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM

RRM

REPETITIVE PEAK

REVERSE VOLTAGE

TYPE NUMBER

VOLTAGE

CODE

V

04 400 500 400

06 600 700 600

08 800 900 800

VSK.26

10 1000 1100 1000

12 1200 1300 1200

14 1400 1500 1400

16 1600 1700 1600

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
(thyristors)

Maximum average forward current
(diodes)

I

T(AV)

I

F(AV)

180° conduction, half sine wave,
T

V

, MAXIMUM

RSM

NON-REPETITIVE PEAK

REVERSE VOLTAGE

V

= 85 °C

C

V

, MAXIMUM REPETITIVE

DRM

PEAK OFF-STATE VOLTAGE,

GATE OPEN CIRCUIT

V

27

AT 125 °C

I

RRM,

I

DRM

mA

15

Maximum continuous RMS on-state current
as AC switch

I

O(RMS)

I

(RMS)

or

I

(RMS)

60

A

400

335

470

800

560

A

1100

8000 A

0.92

0.95

12.11

11.82

mΩ

150 A/µs

200

mA

2

s

2

√s

V

Maximum peak, one-cycle
non-repetitive on-state
or forward current

2

Maximum I

Maximum I

Maximum value or threshold voltage V

t for fusing I2t

2

√t for fusing I2√t

T(TO)

Maximum value of on-state
slope resistance

Maximum peak on-state or forward voltage

Maximum non-repetitive rate of
rise of turned on current

Maximum holding current I

Maximum latching current I

I

TSM

or

I

FSM

(2)

r

t

V

TM

V

FM

dI/dt

H

L

t = 10 ms

t = 8.3 ms 420

t = 10 ms

t = 8.3 ms 350

t = 10 ms

t = 8.3 ms 490

t = 10 ms

t = 8.3 ms 730

t = 10 ms

t = 8.3 ms 510

t = 10 ms

t = 8.3 ms 1000

(1)

t = 0.1 to 10 ms, no voltage reapplied

Low level

(2)

High level

Low level

High level

ITM = π x I

IFM = π x I

TJ = 25 °C, from 0.67 V
I

= π x I

TM

No voltage
reapplied

100 % V
reapplied

= 25 °C, no voltage reapplied

T

J

RRM

Sinusoidal
half wave,
initial T

= TJ maximum

J

No voltage
reapplied

100 % V

RRM

Initial T

= TJ maximum

J

reapplied

= 25 °C, no voltage reapplied

T

J

(3)

TJ = TJ maximum

(4)

(3)

TJ = TJ maximum

(4)

T(AV)

TJ = 25 °C 1.95 V

F(AV)

,

, Ig = 500 mA, tr < 0.5 µs, tp > 6 µs

T(AV)

DRM

TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit

TJ = 25 °C, anode supply = 6 V, resistive load 400

Notes

(1)I2

t for time tx = I2√t x √t

(2)

Average power = V

T(TO)

x

x I

+ rt x (I

T(AV)

T(RMS)

2

)

(3)

16.7 % x π x IAV < I < π x I

(4)

I > π x I

AV

AV

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94418

2 Revision: 22-Apr-08

VSK.26..PbF Series

Thyristor/Diode and Thyristor/Thyristor

Vishay High Power Products

(ADD-A-PAKTM Generation 5 Power Modules), 27 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak gate current I

Maximum peak negative gate voltage - V

Maximum gate voltage required to trigger V

Maximum gate current required to trigger I

Maximum gate voltage that will not trigger V

Maximum gate current that will not trigger I

GM

G(AV)

GM

GM

GT

GT

GD

GD

TJ = - 40 °C

= 25 °C 2.5

T

J

T

= 125 °C 1.7

J

TJ = - 40 °C

= 25 °C 150

J

T

= 125 °C 80

J

TJ = 125 °C, rated V

TJ = 125 °C, rated V

Anode supply = 6 V
resistive load

Anode supply = 6 V
resistive load

applied 0.25 V

DRM

applied 6 mA

DRM

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak reverse and off-state
leakage current at V

RRM

, V

DRM

RMS insulation voltage V

Maximum critical rate of rise of off-state voltage dV/dt

Note

(1)

Available with dV/dt = 1000 V/ms, to complete code add S90 i.e. VSKT26/16AS90

I

RRM

I

DRM

,

TJ = 125 °C, gate open circuit 15 mA

50 Hz, circuit to base, all terminals shorted

INS

(1)

TJ = 125 °C, linear to 0.67 V

DRM

10

2.5

2.5 A

10

4.0

270

2500 (1 min)

3500 (1 s)

500 V/µs

W

V

mAT

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Junction operating and storage
temperature range

Maximum internal thermal resistance,
junction to case per module

Typical thermal resistance,
case to heatsink

to heatsink

Mounting torque ± 10 %

busbar 3

Approximate weight

, T

T

J

Stg

R

thJC

DC operation 0.31

- 40 to 125 °C

K/W

R

thCS

Mounting surface flat, smooth and greased 0.1

A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread

5

Nm

of the compound.

110 g

4oz.

Case style JEDEC TO-240AA

ΔR CONDUCTION PER JUNCTION

DEVICES

VSK.26 0.23 0.27 0.34 0.48 0.73 0.17 0.28 0.36 0.49 0.73 °C/W

Note

• Table shows the increment of thermal resistance R

SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION

180° 120° 90° 60° 30° 180° 120° 90° 60° 30°

when devices operate at different conduction angles than DC

thJC

UNITS

Document Number: 94418 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 22-Apr-08 3

VSK.26..PbF Series

Vishay High Power Products

130

120

110

100

90

80

Maximum Allowa ble Case Temperature (°C)

0 5 10 15 20 25 30

Fig. 1 - Current Ratings Characteristics

130

120

110

VSK.26.. Se rie s
R (DC) = 0.62 K/ W

thJC

Conduction Angle

30°

60°

90°

120°

180°

Average On-state Current (A)

VSK.26.. Series
R (DC) = 0.62 K/W

thJC

Conduction Period

Thyristor/Diode and Thyristor/Thyristor

(ADD-A-PAKTM Generation 5 Power Modules), 27 A

70

DC

180°

60

120°

90°

50

60°
30°

40

30

20

10

0

Maximum Average On-state Power Loss (W)

01020304050

Average On-state Current (A)

Fig. 4 - On-State Power Loss Characteristics

400

At Any Rated Loa d Condition And With

Ra ted V Ap plie d Followi ng Su rg e.

RRM

350

300

Conduc tion Period

VSK.26.. Se rie s
Pe r Ju n ct io n
T = 1 25 ° C

J

Init ial T = 125°C

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

RM S Li m it

J

100

30°

60°

90

80

Maximum Allowab le Case Temperature (°C)

01020304050

90°

120°

180°

Ave rag e On-sta te Curren t (A)

Fig. 2 - Current Ratings Characteristics

50

40

30

20

10

0

Maximum Average On-state Power Loss (W)

180°
120°

90°
60°
30°

RM S Li m it

Conduction Angle

VSK.26.. Se ries
Pe r J u n c ti o n
T = 125°C

J

0 5 10 15 20 25 30

Ave rage On-state Current (A)

DC

250

200

VSK.26. . Se ries
Pe r J u nc t io n

Pea k Ha lf Sin e Wa ve On- sta t e Curre nt ( A)

150

110100

Number O f Equa l Amplitud e Half Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

400

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conduc tion May Not Be Ma intained.

350

300

250

200

VSK.26.. Se ries

Pea k Half Sine Wav e On-st a te Curren t (A)

Pe r J un c t io n

150

0.01 0.1 1

Pulse Train Duration (s)

Init ia l T = 125°C

No Voltage Reapplied
Rat ed V Reap plied

J

RRM

Fig. 3 - On-State Power Loss Characteristics

Fig. 6 - Maximum Non-Repetitive Surge Current

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94418

4 Revision: 22-Apr-08

VSK.26..PbF Series

Thyristor/Diode and Thyristor/Thyristor

(ADD-A-PAKTM Generation 5 Power Modules), 27 A

100

90

80

70

180°
120°

90°
60°
30°

60

50

40

Conduction Angle

30

20

10

Maximum Total On-sta te Power Loss (W)

0

0

10 20 30 40 50 60

VSK.26.. Se rie s

Pe r M od u le

T = 1 25 ° C

J

Total RMS Output Current (A)

Fig. 7 - On-State Power Loss Characteristics

250

200

150

100

50

Maximum Total Power Loss (W)

0

0 102030405060

180°

(Sine)

180°

(Rec t)

2 x VSK.26.. Se rie s

Si n g l e Ph a s e B r i d g e

Connected

T = 125°C

J

To t al Out put Curre nt ( A)

Fig. 8 - On-State Power Loss Characteristics

0

1

K

/

W

1

.

5

K

/

W

2

K

/

W

3

K

/

W

4

K

/

W

8

K

/

W

0 20 40 60 80 100 120 140

Maximum Allowable Ambient Temperature (°C)

0

.

3

K

/

W

0

.

5

K

/

W

0

.

7

K

/

W

1

K

/

W

1

.

5

K

/

W

3

K/

W

8

K

/

W

0 20406080100120140

Maximum Allowable Ambient Temperature (°C)

0

.

0

3

.

5

.

7

K

K

K

0

/

/

W

/

W

R

t

h

.

S

2

A

K

/

=

W

Vishay High Power Products

R

t
h

S

A

W

=

0

.
1

K

/
W

­D

e

l

t

a

R

0

.

1

K

/

W

­D

e

l
t

a

R

350

300

250

200

120°

(Rec t)

150

100

Maximum Tot al Pow er Loss (W)

50

0

0 1020304050607080

3 x VSK.26.. Serie s

Three Phase Bridge

Connect ed

T = 125°C

J

Total Output Current (A)

0

.

3

K

/

W

0

.

4

K

/

W

0

.

5

K

/

W

0

.

7

K

/

W

1

K

/

W

1

.

5

K

/

W

3

K

/

W

0 20 40 60 80 100 120 140

Maximum Allowable Ambient Temperature (°C)

R

t

h

0

S

.

A

2

K

=

/

W

0

.

1

K

/

W

­D

e

l

t

a

R

Fig. 9 - On-State Power Loss Characteristics

Document Number: 94418 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 22-Apr-08 5

VSK.26..PbF Series

Vishay High Power Products

1

Steady State Value:

R = 0.62 K/ W

thJC

thJC

(DC Operation)

Thyristor/Diode and Thyristor/Thyristor

(ADD-A-PAKTM Generation 5 Power Modules), 27 A

1000

100

T = 2 5° C

J

10

Instantaneous On-state Current (A)

1

01234567

Inst an ta ne ou s On- sta te Vo lta ge (V )

Fig. 10 - On-State Voltage Drop Characteristics

T = 1 25 ° C

J

VSK.26.. Se ries
Pe r Ju nc t io n

0.1

VSK.2 6 . . Ser i e s

Transient Thermal Impedance Z (K/W)

0.01

0.001 0.01 0.1 1 10

Sq u a r e Wa v e P u l se D u r a t i o n ( s)

Fig. 11 - Thermal Impedance Z

100

Rectangular gate pulse
a)Recommended load line for

rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs

b)Recommended load line for

<= 30% rated di/dt: 20 V, 65 ohms

10

tr = 1 µs, t p >= 6 µs

1

Instantaneous Gate Voltage (V)

VGD

IGD

0.1

0.001 0.01 0.1 1 10 100 1000

(a)

(b )

TJ = -40 °C

T
J = 25 °C

TJ = 12 5 ° C

VSK.26.. Serie s

Instantaneous Gate Current (A)

Characteristics

thJC

(1) PGM = 100 W, t p = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms

(4) (3) (2) (1)

Fre q u e nc y Li mi t e d b y PG ( AV )

Fig. 12 - Gate Characteristics

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94418

6 Revision: 22-Apr-08

VSK.26..PbF Series

Thyristor/Diode and Thyristor/Thyristor

(ADD-A-PAKTM Generation 5 Power Modules), 27 A

ORDERING INFORMATION TABLE

Device code

VSK T 26 / 16 S90 P

1 - Module type

2 - Circuit configuration (see end of datasheet)

3

- Current code

4 - Voltage code (see Voltage Ratings table)

5 - dV/dt code: S90 = dV/dt 1000 V/µs

6 - P = Lead (Pb)-free

(1)

Available with no auxiliary cathode

(for details see dimensions - link at the

To specify change: 26 to 27

e.g.: VSKT27/16P etc.

Vishay High Power Products

51324

(1)

No letter = dV/dt 500 V/µs

end of datasheet)

6

Note

• To order the optional hardware go to www.vishay.com/doc?95172

CIRCUIT CONFIGURATION

VSKT

1

45 76

2

3

(1)

~

+

(2)

-

(3)

G1

(4)K1(5)K2(7)G2(6)

1

45

(1)

~

G1

(4)K1(5)

(2)

(3)

+

-

2

3

VSKLVSKH

(1)

~

1

(2)

(3)

K2

(7)G2(6)

+

-

2

3

76

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95085

VSKN

1

2

3

45

G1

(4)K1(5)

(1)

(3)

(2)

-

+

+

Document Number: 94418 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 22-Apr-08 7

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay High Power Products

ADD-A-PAK Thyristor

Faston tab 2.8 x 0.8 (0.110 x 0.03)

35 REF.

21 ± 0.75

Screws M5 x 0.8

30 ± 0.5

29 ± 0.5

(1 ± 0.0197)

(1.18 ± 0.0197)

(0.8 ± 0.02953)

15 ± 0.5 (0.59 ± 0.0197)

6.2 (2 x) ± 0.2 (0.2 ± 0.0079)

Viti M5 x 0.8

80 ± 0.3 (3.15 ± 0.0118)

1

20 ± 0.5 (0.79 ± 0.0197)

92 ± 0.75 (3.6 ± 0.02953)

15.6 ± 0.5

(0.6 ± 0.0197)

18 (0.7) REF.

2

20 ± 0.5 (0.79 ± 0.0197)

3

45 76

6.3 ± 0.3 (0.2 ± 0.0118)

24 ± 0.5

(1 ± 0.0197)

30 ± 1 (1.18 ± 0.039)

Detail Z

With no auxiliary cathode

46

45 76

13.8 (0.54)

4 ± 0.2

(0.2 ± 0.0079)

13.8 REF.

Document Number: 95087 For technical questions concerning discrete products, contact: [e-mail]
Revision: 03-Aug-07 For technical questions concerning module products, contact: [e-mail]

5.8 ± 0.25
(0.2 ± 0.00984)

www.vishay.com

1