C&H Technology VSK26PbF User Manual

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Minnetonka, MN 55345

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Thyristor/Diode and Thyristor/Thyristor

TM

TM

Generation 5 Power Modules), 27 A

27 A

(ADD-A-PAK

ADD-A-PAK

PRODUCT SUMMARY

I

or I

T(AV)

F(AV)

MECHANICAL DESCRIPTION

The Generation 5 of ADD-A-PAKTM modules combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior mechanical
ruggedness, thanks to the insertion of a solid copper
baseplate at the bottom side of the device. The Cu baseplate
allows an easier mounting on the majority of heatsink with
increased tolerance of surface roughness and improved
thermal spread. The Generation 5 of AAP modules is
manufactured without hard mold, eliminating in this way any
possible direct stress on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop feature
already tested and proved as reliable on other Vishay HPP
modules.

VSK.26..PbF Series

Vishay High Power Products

FEATURES

• High voltage

• Industrial standard package

• Thick copper baseplate

• UL E78996 approved

• 3500 V

• Totally lead (Pb)-free

• Designed and qualified for industrial level

BENEFITS

• Up to 1600 V

• Fully compatible TO-240AA

• High surge capability

• Easy mounting on heatsink

•Al

203

• Heatsink grounded

ELECTRICAL DESCRIPTION

These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery chargers.

isolating voltage

RMS

DBC insulator

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

or I

T(AV)

F(AV)

I

O(RMS)

I

TSM,

I

FSM

2

I

t

2

I

√t 8000 A2√s

V

RRM

T

Stg

T

J

Document Number: 94418 For technical questions, contact: [e-mail]
Revision: 22-Apr-08 1

85 °C 27

As AC switch 60

50 Hz 400

60 Hz 420

50 Hz 800

60 Hz 730

Range 400 to 1600 V

- 40 to 125 °C

A2s

A

www.vishay.com

VSK.26..PbF Series

Vishay High Power Products

Thyristor/Diode and Thyristor/Thyristor

(ADD-A-PAKTM Generation 5 Power Modules), 27 A

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM

RRM

REPETITIVE PEAK

REVERSE VOLTAGE

TYPE NUMBER

VOLTAGE

CODE

V

04 400 500 400

06 600 700 600

08 800 900 800

VSK.26

10 1000 1100 1000

12 1200 1300 1200

14 1400 1500 1400

16 1600 1700 1600

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
(thyristors)

Maximum average forward current
(diodes)

I

T(AV)

I

F(AV)

180° conduction, half sine wave,
T

V

, MAXIMUM

RSM

NON-REPETITIVE PEAK

REVERSE VOLTAGE

V

= 85 °C

C

V

, MAXIMUM REPETITIVE

DRM

PEAK OFF-STATE VOLTAGE,

GATE OPEN CIRCUIT

V

27

AT 125 °C

I

RRM,

I

DRM

mA

15

Maximum continuous RMS on-state current
as AC switch

I

O(RMS)

I

(RMS)

or

I

(RMS)

60

A

400

335

470

800

560

A

1100

8000 A

0.92

0.95

12.11

11.82

mΩ

150 A/µs

200

mA

2

s

2

√s

V

Maximum peak, one-cycle
non-repetitive on-state
or forward current

2

Maximum I

Maximum I

Maximum value or threshold voltage V

t for fusing I2t

2

√t for fusing I2√t

T(TO)

Maximum value of on-state
slope resistance

Maximum peak on-state or forward voltage

Maximum non-repetitive rate of
rise of turned on current

Maximum holding current I

Maximum latching current I

I

TSM

or

I

FSM

(2)

r

t

V

TM

V

FM

dI/dt

H

L

t = 10 ms

t = 8.3 ms 420

t = 10 ms

t = 8.3 ms 350

t = 10 ms

t = 8.3 ms 490

t = 10 ms

t = 8.3 ms 730

t = 10 ms

t = 8.3 ms 510

t = 10 ms

t = 8.3 ms 1000

(1)

t = 0.1 to 10 ms, no voltage reapplied

Low level

(2)

High level

Low level

High level

ITM = π x I

IFM = π x I

TJ = 25 °C, from 0.67 V
I

= π x I

TM

No voltage
reapplied

100 % V
reapplied

= 25 °C, no voltage reapplied

T

J

RRM

Sinusoidal
half wave,
initial T

= TJ maximum

J

No voltage
reapplied

100 % V

RRM

Initial T

= TJ maximum

J

reapplied

= 25 °C, no voltage reapplied

T

J

(3)

TJ = TJ maximum

(4)

(3)

TJ = TJ maximum

(4)

T(AV)

TJ = 25 °C 1.95 V

F(AV)

,

, Ig = 500 mA, tr < 0.5 µs, tp > 6 µs

T(AV)

DRM

TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit

TJ = 25 °C, anode supply = 6 V, resistive load 400

Notes

(1)I2

t for time tx = I2√t x √t

(2)

Average power = V

T(TO)

x

x I

+ rt x (I

T(AV)

T(RMS)

2

)

(3)

16.7 % x π x IAV < I < π x I

(4)

I > π x I

AV

AV

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94418

2 Revision: 22-Apr-08