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(MAGN-A-PAK Power Modules), 170 A/250 A
MAGN-A-PAK
PRODUCT SUMMARY
I
T(AV)
VSK.170PbF, VSK.250PbF Series
Vishay High Power Products
SCR/SCR and SCR/Diode
FEATURES
• High voltage
• Electrically isolated base plate
170 A/250 A
• 3500 V
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
This new VSK series of MAGN-A-PAK modules uses high
voltage power thyristor/thyristor and thyristor/diode in seven
basic configurations. The semiconductors are electrically
isolated from the metal base, allowing common heatsinks
and compact assemblies to be built. They can be
interconnected to form single phase or three phase bridges
or as AC-switches when modules are connected in
anti-parallel mode. These modules are intended for general
purpose applications such as battery chargers, welders,
motor drives, UPS, etc.
isolating voltage
RMS
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VSK.170.. VSK.250.. UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
t
I
2
√t 1310 3610 kA2√s
I
V
DRM/VRRM
T
J
Document Number: 94417 For technical questions, contact: indmodules@vishay.com
Revision: 08-Oct-09 1
85 °C 170 250
377 555
50 Hz 5100 8500
60 Hz 5350 8900
50 Hz 131 361
60 Hz 119 330
Up to 1600 Up to 2000 V
Range - 40 to 130 °C
kA2s
www.vishay.com
A
VSK.170PbF, VSK.250PbF Series
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM/VDRM
PEAK REVERSE AND OFF-STATE
TYPE NUMBER
VSK.170-
VSK.250-
VOLTAGE
CODE
04 400 500
08 800 900
10 1000 1100
12 1200 1300
14 1400 1500
16 1600 1700
04 400 500
08 800 900
10 1000 1100
12 1200 1300
14 1400 1500
16 1600 1700
18 1800 1900
20 2000 2100
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
, MAXIMUM REPETITIVE
BLOCKING VOLTAGE
V
V
, MAXIMUM
RSM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
I
RRM/IDRM
AT 130 °C
MAXIMUM
mA
50
50
60
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS
Maximum average on-state current
at case temperature
Maximum RMS on-state current I
Maximum peak, one-cycle on-state
non-repetitive, surge current
Maximum I
Maximum I
2
t for fusing I2t
2
√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 1310 3610 kA2√s
Low level value or threshold voltage V
High level value of threshold voltage V
Low level value on-state slope resistance r
High level value on-state slope resistance r
Maximum on-state voltage drop V
Maximum holding current I
Maximum latching current I
I
T(AV)
T(RMS)
I
TSM
T(TO)1
T(TO)2
t1
(I > π x I
t2
TM
H
L
180° conduction, half sine wave
As AC switch 377 555
t = 10 ms
t = 8.3 ms 5350 8900
t = 10 ms
t = 8.3 ms 4500 7500
t = 10 ms
t = 8.3 ms 119 330
t = 10 ms
t = 8.3 ms 84.4 233
(16.7 % x π x I
T
= TJ maximum
J
(I > π x I
T(AV)
(16.7 % x π x I
T
= TJ maximum
J
T(AV)
ITM = π x I
T(AV)
average power = V
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
RRM
RRM
Sinusoidal
half wave,
initial T
=
J
maximum
T
J
reapplied
< I < π x I
T(AV)
< I < π x I
< I < π x I
T(AV)
< I < π x I
T(AV)
T(AV)
),
T(AV)
), TJ = TJ maximum 1.12 1.00
),
T(AV)
), TJ = TJ maximum 0.96 0.57
, TJ = TJ maximum, 180° conduction,
T(TO)
x I
T(AV)
+ rf x (I
T(RMS)
2
)
Anode supply = 12 V, initial IT = 30 A, TJ = 25 °C 500 500
Anode supply = 12 V, resistive load = 1 Ω,
gate pulse: 10 V, 100 µs, T
= 25 °C
J
www.vishay.com For technical questions, contact: indmodules@vishay.com
2 Revision: 08-Oct-09
170 250 A
85 85 °C
5100 8500
4300 7150
131 361
92.5 255
kA2s
0.89 0.97
1.34 0.60
1.60 1.44 V
1000 1000
Document Number: 94417
A
V
mΩ
mA
VSK.170PbF, VSK.250PbF Series
SCR/SCR and SCR/Diode
Vishay High Power Products
(MAGN-A-PAK Power Modules), 170 A/250 A
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS
Typical delay time t
Typical rise time t
Typical turn-off time t
TJ = 25 °C, gate current = 1 A dIg/dt = 1 A/µs
d
V
= 0.67 % V
r
q
d
I
= 300 A; dI/dt = 15 A/µs; TJ = TJ maximum;
TM
V
= 50 V; dV/dt = 20 V/µs; gate 0 V, 100 Ω
R
DRM
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS
Maximum peak reverse and
off-state leakage current
RMS insulation voltage V
Critical rate of rise of off-state voltage dV/dt T
I
RRM,
I
DRM
INS
TJ = TJ maximum 50 60 mA
50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s 3000 V
= TJ maximum, exponential to 67 % rated V
J
DRM
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS
Maximum peak gate power P
Maximum average gate power P
GM
G(AV)
Maximum peak gate current + I
Maximum peak negative gate voltage - V
Maximum required DC gate voltage to trigger V
Maximum required DC gate current to trigger I
Maximum gate voltage that will not trigger V
Maximum gate current that willnot trigger I
GT
GT
GD
GD
Maximum rate of rise of turned-on current dI/dt
tp ≤ 5 ms, TJ = TJ maximum 10.0
f = 50 Hz, TJ = TJ maximum 2.0
tp ≤ 5 ms, TJ = TJ maximum 3.0 A
GM
tp ≤ 5 ms, TJ = TJ maximum 5.0
GT
TJ = - 40 °C
T
= 25 °C 3.0
J
= TJ maximum 2.0
T
J
Anode supply = 12 V,
resistive load; Ra = 1 Ω
TJ = - 40 °C
= 25 °C 200
J
= TJ maximum 100
T
J
TJ = TJ maximum, rated V
TJ = TJ maximum, rated V
= TJ maximum, ITM = 400 A,
T
J
rated V
DRM
applied
Anode supply = 12 V,
resistive load; Ra = 1 Ω
applied 0.25 V
DRM
applied 10.0 mA
DRM
1.0
2.0
µs
50 to 150
1000 V/µs
W
4.0
V
350
mAT
500 A/µs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS
Junction operating and storage
temperature range
Maximum thermal resistance,
junction to case per junction
Typical thermal resistance,
case to heatsink per module
MAP to heatsink
Mounting torque ± 10 %
busbar to MAP
Approximate weight
Case style MAGN-A-PAK
Document Number: 94417 For technical questions, contact: indmodules@vishay.com
Revision: 08-Oct-09 3
, T
T
J
Stg
R
thJC
DC operation 0.17 0.125
- 40 to 130 °C
K/W
R
thCS
Mounting surface flat, smooth and greased 0.02 0.02
A mounting compound is recommended and
the torque should be rechecked after a
period of about 3 hours to allow for the
4 to 6 Nm
spread of the compound.
500 g
17.8 oz.
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