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(MAGN-A-PAK Power Modules), 170 A/250 A
MAGN-A-PAK
PRODUCT SUMMARY
I
T(AV)
VSK.170PbF, VSK.250PbF Series
Vishay High Power Products
SCR/SCR and SCR/Diode
FEATURES
• High voltage
• Electrically isolated base plate
170 A/250 A
• 3500 V
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
This new VSK series of MAGN-A-PAK modules uses high
voltage power thyristor/thyristor and thyristor/diode in seven
basic configurations. The semiconductors are electrically
isolated from the metal base, allowing common heatsinks
and compact assemblies to be built. They can be
interconnected to form single phase or three phase bridges
or as AC-switches when modules are connected in
anti-parallel mode. These modules are intended for general
purpose applications such as battery chargers, welders,
motor drives, UPS, etc.
isolating voltage
RMS
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VSK.170.. VSK.250.. UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
t
I
2
√t 1310 3610 kA2√s
I
V
DRM/VRRM
T
J
Document Number: 94417 For technical questions, contact: indmodules@vishay.com
Revision: 08-Oct-09 1
85 °C 170 250
377 555
50 Hz 5100 8500
60 Hz 5350 8900
50 Hz 131 361
60 Hz 119 330
Up to 1600 Up to 2000 V
Range - 40 to 130 °C
kA2s
www.vishay.com
A
VSK.170PbF, VSK.250PbF Series
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
RRM/VDRM
PEAK REVERSE AND OFF-STATE
TYPE NUMBER
VSK.170-
VSK.250-
VOLTAGE
CODE
04 400 500
08 800 900
10 1000 1100
12 1200 1300
14 1400 1500
16 1600 1700
04 400 500
08 800 900
10 1000 1100
12 1200 1300
14 1400 1500
16 1600 1700
18 1800 1900
20 2000 2100
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
, MAXIMUM REPETITIVE
BLOCKING VOLTAGE
V
V
, MAXIMUM
RSM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
I
RRM/IDRM
AT 130 °C
MAXIMUM
mA
50
50
60
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS
Maximum average on-state current
at case temperature
Maximum RMS on-state current I
Maximum peak, one-cycle on-state
non-repetitive, surge current
Maximum I
Maximum I
2
t for fusing I2t
2
√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 1310 3610 kA2√s
Low level value or threshold voltage V
High level value of threshold voltage V
Low level value on-state slope resistance r
High level value on-state slope resistance r
Maximum on-state voltage drop V
Maximum holding current I
Maximum latching current I
I
T(AV)
T(RMS)
I
TSM
T(TO)1
T(TO)2
t1
(I > π x I
t2
TM
H
L
180° conduction, half sine wave
As AC switch 377 555
t = 10 ms
t = 8.3 ms 5350 8900
t = 10 ms
t = 8.3 ms 4500 7500
t = 10 ms
t = 8.3 ms 119 330
t = 10 ms
t = 8.3 ms 84.4 233
(16.7 % x π x I
T
= TJ maximum
J
(I > π x I
T(AV)
(16.7 % x π x I
T
= TJ maximum
J
T(AV)
ITM = π x I
T(AV)
average power = V
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
RRM
RRM
Sinusoidal
half wave,
initial T
=
J
maximum
T
J
reapplied
< I < π x I
T(AV)
< I < π x I
< I < π x I
T(AV)
< I < π x I
T(AV)
T(AV)
),
T(AV)
), TJ = TJ maximum 1.12 1.00
),
T(AV)
), TJ = TJ maximum 0.96 0.57
, TJ = TJ maximum, 180° conduction,
T(TO)
x I
T(AV)
+ rf x (I
T(RMS)
2
)
Anode supply = 12 V, initial IT = 30 A, TJ = 25 °C 500 500
Anode supply = 12 V, resistive load = 1 Ω,
gate pulse: 10 V, 100 µs, T
= 25 °C
J
www.vishay.com For technical questions, contact: indmodules@vishay.com
2 Revision: 08-Oct-09
170 250 A
85 85 °C
5100 8500
4300 7150
131 361
92.5 255
kA2s
0.89 0.97
1.34 0.60
1.60 1.44 V
1000 1000
Document Number: 94417
A
V
mΩ
mA
VSK.170PbF, VSK.250PbF Series
SCR/SCR and SCR/Diode
Vishay High Power Products
(MAGN-A-PAK Power Modules), 170 A/250 A
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS
Typical delay time t
Typical rise time t
Typical turn-off time t
TJ = 25 °C, gate current = 1 A dIg/dt = 1 A/µs
d
V
= 0.67 % V
r
q
d
I
= 300 A; dI/dt = 15 A/µs; TJ = TJ maximum;
TM
V
= 50 V; dV/dt = 20 V/µs; gate 0 V, 100 Ω
R
DRM
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS
Maximum peak reverse and
off-state leakage current
RMS insulation voltage V
Critical rate of rise of off-state voltage dV/dt T
I
RRM,
I
DRM
INS
TJ = TJ maximum 50 60 mA
50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s 3000 V
= TJ maximum, exponential to 67 % rated V
J
DRM
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS
Maximum peak gate power P
Maximum average gate power P
GM
G(AV)
Maximum peak gate current + I
Maximum peak negative gate voltage - V
Maximum required DC gate voltage to trigger V
Maximum required DC gate current to trigger I
Maximum gate voltage that will not trigger V
Maximum gate current that willnot trigger I
GT
GT
GD
GD
Maximum rate of rise of turned-on current dI/dt
tp ≤ 5 ms, TJ = TJ maximum 10.0
f = 50 Hz, TJ = TJ maximum 2.0
tp ≤ 5 ms, TJ = TJ maximum 3.0 A
GM
tp ≤ 5 ms, TJ = TJ maximum 5.0
GT
TJ = - 40 °C
T
= 25 °C 3.0
J
= TJ maximum 2.0
T
J
Anode supply = 12 V,
resistive load; Ra = 1 Ω
TJ = - 40 °C
= 25 °C 200
J
= TJ maximum 100
T
J
TJ = TJ maximum, rated V
TJ = TJ maximum, rated V
= TJ maximum, ITM = 400 A,
T
J
rated V
DRM
applied
Anode supply = 12 V,
resistive load; Ra = 1 Ω
applied 0.25 V
DRM
applied 10.0 mA
DRM
1.0
2.0
µs
50 to 150
1000 V/µs
W
4.0
V
350
mAT
500 A/µs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VSK.170 VSK.250 UNITS
Junction operating and storage
temperature range
Maximum thermal resistance,
junction to case per junction
Typical thermal resistance,
case to heatsink per module
MAP to heatsink
Mounting torque ± 10 %
busbar to MAP
Approximate weight
Case style MAGN-A-PAK
Document Number: 94417 For technical questions, contact: indmodules@vishay.com
Revision: 08-Oct-09 3
, T
T
J
Stg
R
thJC
DC operation 0.17 0.125
- 40 to 130 °C
K/W
R
thCS
Mounting surface flat, smooth and greased 0.02 0.02
A mounting compound is recommended and
the torque should be rechecked after a
period of about 3 hours to allow for the
4 to 6 Nm
spread of the compound.
500 g
17.8 oz.
www.vishay.com
VSK.170PbF, VSK.250PbF Series
Vishay High Power Products
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
ΔR CONDUCTION PER JUNCTION
DEVICES
SINUSOIDAL CONDUCTION AT T
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
VSK.170- 0.009 0.010 0.010 0.020 0.032 0.007 0.011 0.015 0.020 0.033
VSK.250- 0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033
Note
• Table shows the increment of thermal resistance R
130
120
110
100
90
80
70
60
Maximum Allowable Case Temperature (°C)
0 40 80 120 160 200
VSK.170.. Series
R
(DC) = 0.17 K/W
thJC
Conduction Ang le
30°
60°
90°
120°
Average On-state Current (A)
180°
Fig. 1 - Current Ratings Characteristics
MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM
J
when devices operate at different conduction angles than DC
thJC
)
Maximum Average On-state Power Loss (W
300
250
200
150
100
50
0
180°
120°
90°
60°
30°
RMS Limit
Conduction Angle
VSK.170.. Series
Per Junction
T
= 125°C
J
040801201602
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
UNITS
K/W
00
130
120
110
100
90
80
70
60
Maximum Allowable Case Temperature (°C)
0 50 100 150 200 250 3
Average On-state Curr ent (A)
VSK.170.. Series
R (DC) = 0.17 K/W
thJC
Conduction Period
30°
60°
90°
120°
180°
Fig. 2 - Current Ratings Characteristics
DC
350
DC
180°
300
120°
90°
250
60°
30°
200
RMS Limit
150
100
50
00
0
Maximum Average On-state Power Loss (W)
0 50 100 150 200 250 3
Average On-state Current (A)
Conduction Period
VSK.170.. Series
Per Junction
T
= 125°C
J
00
Fig. 4 - On-State Power Loss Characteristics
www.vishay.com For technical questions, contact: indmodules@vishay.com
Document Number: 94417
4 Revision: 08-Oct-09
VSK.170PbF, VSK.250PbF Series
SCR/SCR and SCR/Diode
Vishay High Power Products
(MAGN-A-PAK Power Modules), 170 A/250 A
5000
At Any Rated Load Condition And With
Rated V
4500
Applied Following Surge.
RRM
Initial TJ = 130°C
@ 60 Hz 0.0083 s
4000
@ 50 Hz 0.0100 s
3500
3000
2500
VSK.170.. Series
Peak Half Sine Wave On-state Current (A)
Per Junction
2000
110100
Number Of Equal Amplitude Hal f Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
400
350
300
180°
120°
90°
60°
30°
250
200
Conduction Angle
150
100
50
Maximum Total On-state Power Loss (W)
0
0 50 100 150 200 25 0 300 350 400
VSK.170.. Series
Per Module
T
J
Total RMS Output Current (A)
= 130°C
0
.
2
K
0
.
2
5
K
/
0
W
.
3
K
/
W
0
.
3
5
K
/W
020406080100120
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
5000
4500
4000
Maximum Non Repetitive Surge Current
Versus Pul se Tra in Dur ation. Contro l
Of Conduction May Not Be Maintained .
Initial TJ = 130°C
No Voltage Reapplied
Rated V
Reapplied
RRM
3500
3000
2500
VSK.170.. Series
Peak Half Sine Wave On-state Current (A)
Per Junction
2000
0.01 0.1 1
Pulse Train Duration (s)
0
0.
.
1
1
6
2
K
/
/
W
W
R
0
.
0
t
8K
h
K
S
A
/
/
W
W
=
0
.
0
4
K
/
W
D
e
l
t
a
R
1000
900
800
700
600
500
180°
(Sine)
180°
(Rect)
400
300
200
Maximum Total Power Loss (W)
100
0
0 50 100 150 200 250 300 350
2 x VSK.170.. Series
Single Phase Bridge
Connected
= 130°C
T
J
Total Output Current (A)
0
0
.
0
.
0
6
8
0
K
.
/
1
W
K
/
W
0
.1
2
K
/
W
0
.
1
6
K
/
W
0
.
2
K
/
W
0
.
2
5
K
/
W
0
.
3
5
K
/
W
0 20406080100120
Maximum Allowable Ambient Temperature (°C)
R
0
.
0
t
4
h
S
K
A
/
W
K
/
W
=
0
.
0
2
K
/
W
D
e
l
t
a
R
Fig. 8 - On-State Power Loss Characteristics
Document Number: 94417 For technical questions, contact: indmodules@vishay.com
www.vishay.com
Revision: 08-Oct-09 5
VSK.170PbF, VSK.250PbF Series
Vishay High Power Products
1600
1400
1200
1000
800
600
400
Maximum Total Power Loss (W)
200
0
0 100200300400500
Total Output Current (A)
130
120
110
100
90
80
70
60
Maximum Allowable Case Temperature (°C)
0 50 100 150 200 250 3
Fig. 10 - Current Ratings Characteristics
VSK.250.. Series
(DC) = 0.125 K/W
R
thJC
Conduction Ang le
30°
60°
90°
120°
Average On-state Current (A)
180°
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
0
.
0
.
0
5
K
/
W
0
.
0
8
K
/
120°
(Rect)
3 x VSK.170.. Series
Three Phase Bridge
W
0
.
1
K
/
W
0
.
1
2
K
/
W
0
.
1
6
K
/
W
0
.
2
5
K
/
W
Connected
T
= 130°C
J
0 20406080100120
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - On-State Power Loss Characteristics
00
R
0
t
3
)
h
S
K
A
/
W
=
0
.
0
1
K
/
W
D
e
l
t
a
R
350
180°
300
250
200
120°
90°
60°
30°
RMS Limit
150
100
VSK.250.. Series
50
0
Maximum Average On-state Power Loss (W
050100150200250
Per Junction
T = 130°C
J
Average On-state Current (A)
Fig. 12 - On-State Power Loss Characteristics
Conduction Angl e
130
120
VSK.250.. Series
(DC) = 0.125 K/W
R
thJC
110
90°
120°
Conduction Per iod
180°
DC
100
90
80
30°
60°
70
60
Maximum Allowable Case Temperature (°C)
01002003004005
Average On-state Current (A)
Fig. 11 - Current Ratings Characteristics
00
500
450
400
350
300
250
200
150
100
50
0
Maximum Average On-state Power Loss (W)
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
VSK.250.. Series
Per Junction
= 130°C
T
J
0 50 100 150 200 250 300 350 4
Average On-state Current (A)
Fig. 13 - On-State Power Loss Characteristics
00
www.vishay.com For technical questions, contact: indmodules@vishay.com
Document Number: 94417
6 Revision: 08-Oct-09
VSK.170PbF, VSK.250PbF Series
SCR/SCR and SCR/Diode
Vishay High Power Products
(MAGN-A-PAK Power Modules), 170 A/250 A
7500
At Any Rate d Load Condition And With
7000
6500
Rated V
Applied Following Surge.
RRM
Initial T = 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
6000
5500
5000
4500
VSK.250.. Series
4000
Peak Half Sine Wave On-state Current (A)
Per Junction
3500
11010
0
Number Of Equ al Ampli tu de Half Cycl e Current Pulse s (N)
Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current
700
600
500
Conduction angle
180°
120°
90°
60°
30°
400
300
200
VSK.250.. Series
100
Maximum Total On-state Pow er Loss (W)
0
0 100 2 00 300 400 500 600
Per Module
T
= 130°C
J
Total RMS Output Current (A)
020406080100120
Maximum Allowable Ambient Temperature (°C)
0
.
0
0
.
1
2
K
/
W
0
.
1
6
K
/
W
0
.
2
0
K
/
W
0
.
2
5
K
/
W
0
.
3
K
/
W
Fig. 16 - On-State Power Loss Characteristics
9000
8000
7000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained .
Initial TJ = 130°C
No Voltage Reapplied
Rated V
RRM
Reapplied
6000
5000
4000
VSK.250.. Series
Per Junctio n
Peak Half Sine Wave On-state Current (A)
3000
0.01 0.1 1
Pulse Train Duration (s)
0
R
.
0
t
5
8
K
/
W
h
K
S
A
/
W
=
0
.
0
2
K
/
W
D
e
l
t
a
R
1400
1200
1000
Maximum Total Power Loss (W)
800
600
400
200
180°
(Sine)
180°
(Rect)
2 x VSK.250.. Series
Single Phase Bridge
0
0
100 200 300 400 500
Total Output Current (A)
Connect ed
= 130°C
T
J
0
.
0
4
0
K
.
0
5
K
/
W
0
.
0
6
K
/
W
0
.
1
K
/
W
0
.
1
2
K
/
W
0
.
1
6
K
/
W
0
.
3
K
/
W
0 20406080100120
Maximum Allowable Ambient Temperature (°C)
0.02
0
/
W
R
.
0
t
h
3
S
K
K
A
/
/
W
=
W
0
.
0
1
K
/
W
D
e
l
t
a
R
Fig. 17 - On-State Power Loss Characteristics
Document Number: 94417 For technical questions, contact: indmodules@vishay.com
www.vishay.com
Revision: 08-Oct-09 7
VSK.170PbF, VSK.250PbF Series
Vishay High Power Products
2000
1800
1600
1400
1200
1000
800
600
400
Maximum Total Power Loss (W)
200
0
0
100 200 300 400 500 600 700
Total Output Current (A)
10000
Tj = 25°C
Tj = 130°C
1000
VSK.170 Series
Instantaneous Forward Current (V)
100
0.511.522.533.544.55
Instantaneous Forward Voltage (V)
Fig. 19 - On-State Voltage Drop Characteristics
Per Junction
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
0
0
.
.
0
5
K
/
0
.
0
6
K
/
W
0
.
0
8
K
/
120°
(Rect)
3 x VSK.250.. Series
Three Phase Bridge
Connect ed
T
= 130°C
J
W
0
.
1
K
/
W
0
.
1
2
K
/
W
0
.
1
6
K
/
0
.
2
0
K
/
0
.
2
5
K
/
0 20406080100120
Maximum Allowable Am bient T emperat ure (°C)
Fig. 18 - On-State Power Loss Characteristics
0
0
.
4
0
K
/
W
W
W
W
W
3
K
/
W
1800
1600
R
t
h
S
A
=
0
.
0
1
K
/
W
D
e
l
t
a
R
VSK.170.. Series
T
= 130 °C
J
Per Junction
1400
1200
1000
800
600
400
200
Typical Reverse Recovery Charge - Qrr (µC)
0 102030405060708090100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 21 - Reverse Recovery Charge Characteristics
ITM = 800 A
500 A
300 A
200 A
100 A
50 A
10000
Tj = 25°C
Tj = 130°C
1000
2400
2200
2000
1800
1600
1400
1200
VSK.250.. Series
T
= 130 °C
T = 130 °C
J
J
Per Junction
Per Junction
ITM = 800 A
500 A
300 A
200 A
100 A
50 A
1000
800
VSK.250 Series
Instantaneous Forward Current (V)
Per Junction
100
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Instantaneous Forward Voltage (V)
Fig. 20 - On-State Voltage Drop Characteristics
600
400
200
Typical Reverse Recovery Charge - Qrr (µC)
0 1020304050607080901
00
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 22 - Reverse Recovery Charge Characteristics
www.vishay.com For technical questions, contact: indmodules@vishay.com
Document Number: 94417
8 Revision: 08-Oct-09
VSK.170PbF, VSK.250PbF Series
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
100
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20 V, 10 ohms; tr < =1µs
b) Recommended load line for
<=30% rated di/dt : 10V, 20ohms
tr<=1 µs
10
Tj=12 5 °C
1
Instantaneous Gate Voltage (V)
0.1
0.001 0.01 0.1 1 10 1
VGD
IGD
VSK.170/250 Series Frequency Limited by PG(AV)
Instantaneous Gate Current (A)
Fig. 23 - Gate Characteristics
1
Steady State Value:
R = 0.17 K/W
thJC
thJC
R = 0.125 K/W
thJC
(DC Operation)
0.1
(a)
(b)
Tj=-40 °C
Tj=2 5 °C
VSK.170.. Series
Vishay High Power Products
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
(2) (3)
(1) (4)
00
VSK.250.. Series
0.01
Transient Thermal Impedance Z (K/W)
0.001
0.001 0.01 0.1 1 10 100
ORDERING INFORMATION TABLE
Device code
VSK T 250 - 20 PbF
1
2 - Circuit configuration (see dimensions - link at the end of datasheet)
3
4 - Voltage code x 100 = V
5 - None = Standard production
Square Wave Pulse Duration (s)
Fig. 24 - Thermal Impedance Z
- Module type
- Current rating
PbF = Lead (Pb)-free
Characteristics
thJC
(see Voltage Ratings table)
RRM
51324
Note
• To order the optional hardware go to www.vishay.com/doc?95172
Document Number: 94417 For technical questions, contact: indmodules@vishay.com
www.vishay.com
Revision: 08-Oct-09 9
VSK.170PbF, VSK.250PbF Series
Vishay High Power Products
CIRCUIT CONFIGURATION
+
G2
-
VSKH...
~
-
K2
+
~
+
-
VSKV...
-
+
VSKT...
VSKU...
~
+
-
G1
K1
+
-
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
VSKL...
~
~
+
-
G1
K1
-
+
~
+
+
-
Available from 400 V to 1600 V for VSK.170PbF Series,
available from 400 V to 2000 V for VSK.250PbF Series
-
-
G1
G2
K2
K1
+
+
G1
G2
K1
Available up to 1200 V,
K2
contact factory for different requirement
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95086
www.vishay.com For technical questions, contact: indmodules@vishay.com
Document Number: 94417
10 Revision: 08-Oct-09
Outline Dimensions
Vishay High Power Products
DIMENSIONS in millimeters (inches)
3 screws M8 x 1.25
20 (0.79)
MAGN-A-PAK
35 (1.38) 28 (1.12)
80 (3.15)
9 (0.35)
115 (4.53)
TM
Ø 5.5
6
6 (0.24)
(0.24)
38 (1.5)
50 (1.97)
32
(1.26)
Notes
• Dimensions are nominal
• Full engineering drawings are available on request
• UL identification number for gate and cathode wire: UL 1385
• UL identification number for package: UL 94V0
HEX 13
10 (0.39)
92 (3.62)
51 (2.01)
52 (2.04)
Document Number: 95086 For technical questions concerning discrete products, contact: diodes-tech@vishay.com
Revision: 03-Aug-07 For technical questions concerning module products, contact: ind-modules@vishay.com
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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