C&H Technology VSK105PbF User Manual

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Thyristor/Diode and Thyristor/Thyristor

(ADD-A-PAK

VSK.105..PbF Series

Vishay High Power Products

TM

Generation 5 Power Modules), 105 A

FEATURES

• High voltage

ADD-A-PAK

TM

PRODUCT SUMMARY

I

T(AV)

or I

F(AV)

105 A

MECHANICAL DESCRIPTION

The Generation 5 of ADD-A-PAKTM modules combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior mechanical
ruggedness, thanks to the insertion of a solid copper
baseplate at the bottom side of the device. The Cu baseplate
allows an easier mounting on the majority of heatsink with
increased tolerance of surface roughness and improved
thermal spread.
The Generation 5 of AAP modules is manufactured without
hard mold, eliminating in this way any possible direct stress
on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop feature
already tested and proved as reliable on other Vishay HPP
modules.

• Industrial standard package

• Thick copper baseplate

RoHS

COMPLIANT

• UL E78996 approved

• 3500 V

isolating voltage

RMS

• Totally lead (Pb)-free

• Designed and qualified for industrial level

BENEFITS

• Up to 1600 V

• Fully compatible TO-240AA

• High surge capability

• Easy mounting on heatsink

DBC insulator

•Al

203

• Heatsink grounded

ELECTRICAL DESCRIPTION

These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

or I

T(AV)

F(AV)

I

O(RMS)

I

TSM,

I

FSM

2

t

I

2

√t 159.1 kA2√s

I

V

RRM

T

Stg

T

J

Document Number: 94416 For technical questions, contact: [e-mail]
Revision: 04-Jul-08 1

85 °C 105

As AC switch 235

50 Hz 1785

60 Hz 1870

50 Hz 15.91

60 Hz 14.52

Range 400 to 1600 V

- 40 to 150

- 40 to 130

kA2s

A

°C

www.vishay.com

VSK.105..PbF Series

Vishay High Power Products

Thyristor/Diode and Thyristor/Thyristor

(ADD-A-PAKTM Generation 5 Power Modules), 105 A

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM

RRM

REPETITIVE PEAK

REVERSE VOLTAGE

TYPE NUMBER

VOLTAGE

CODE

V

04 400 500 400

06 600 700 600

08 800 900 800

IRK.105

10 1000 1100 1000

12 1200 1300 1200

14 1400 1500 1400

16 1600 1700 1600

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current (thyristors) I

Maximum average forward current (diodes) I

Maximum continuous RMS on-state current,
as AC switch

T(AV)

F(AV)

I

O(RMS)

V

, MAXIMUM

RSM

NON-REPETITIVE PEAK

REVERSE VOLTAGE

V

180° conduction, half sine wave,
T

= 85 °C

C

or

I

(RMS)

V

, MAXIMUM REPETITIVE

DRM

PEAK OFF-STATE VOLTAGE,

GATE OPEN CIRCUIT

V

105

I

(RMS)

235

I

AT 130 °C

RRM,

I

DRM

mA

20

kA

mΩ

A

V

mA

2

s

2

√s

Maximum peak, one-cycle non-repetitive
on-state or forward current

2

Maximum I

Maximum I

Maximum value or threshold voltage V

t for fusing I2t

2

√t for fusing I2√t

T(TO)

Maximum value of on-state
slope resistance

Maximum peak on-state or forward voltage

Maximum non-repetitive rate of rise of
turned on current

Maximum holding current I

Maximum latching current I

I

TSM

or

I

FSM

(2)

r

t

V

TM

V

FM

dI/dt

H

L

t = 10 ms

t = 8.3 ms 1870

t = 10 ms

t = 8.3 ms 1570

t = 10 ms

t = 8.3 ms 2100

t = 10 ms

t = 8.3 ms 14.52

t = 10 ms

t = 8.3 ms 10.27

t = 10 ms

t = 8.3 ms 18.30

t = 0.1 to 10 ms, no voltage reapplied

(1)

(2)

= TJ maximum

T

J

Low level

High level

Low level

High level

ITM = π x I

IFM = π x I

TJ = 25 °C, from 0.67 V
I

= π x I

TM

No voltage
reapplied

100 % V
reapplied

= 25 °C, no voltage reapplied

T

J

RRM

Sinusoidal
half wave,
initial T

= TJ maximum

J

No voltage
reapplied

100 % V

RRM

Initial T

= TJ maximum

J

reapplied

= 25 °C, no voltage reapplied

T

J

(3)

TJ = TJ maximum

(4)

(3)

TJ = TJ maximum

(4)

T(AV)

TJ = 25 °C 1.64 V

F(AV)

,

, Ig = 500 mA, tr < 0.5 µs, tp > 6 µs

T(AV)

DRM

TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit

TJ = 25 °C, anode supply = 6 V, resistive load 400

1785

1500

2000

15.91

11.25

20.00

159.1 kA

0.80

0.85

2.37

2.25

150 A/µs

250

Notes

(1)I2

t for time tx = I2√t x √t

(2)

Average power = V

T(TO)

x

x I

+ rt x (I

T(AV)

T(RMS)

2

)

(3)

16.7 % x π x IAV < I < π x I

(4)

I> π x I

AV

AV

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94416

2 Revision: 04-Jul-08

VSK.105..PbF Series

Thyristor/Diode and Thyristor/Thyristor

Vishay High Power Products

(ADD-A-PAKTM Generation 5 Power Modules), 105 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak gate current I

Maximum peak negative gate voltage - V

GM

G(AV)

GM

GM

TJ = - 40 °C

Maximum gate voltage required to trigger V

GT

T

= 25 °C 2.5

J

= 125 °C 1.7

T

J

Anode supply = 6 V
resistive load

TJ = - 40 °C

Maximum gate current required to trigger I

Maximum gate voltage that will not trigger V

Maximum gate current that will not trigger I

GT

GD

GD

= 25 °C 150

J

T

= 125 °C 80

J

TJ = 125 °C, rated V

TJ = 125 °C, rated V

Anode supply = 6 V
resistive load

applied 0.25 V

DRM

applied 6 mA

DRM

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak reverse and off-state
leakage current at V

RRM

, V

DRM

RMS insulation voltage V

Maximum critical rate of rise of off-state voltage dV/dt

Note

(1)

Available with dV/dt = 1000 V/ms, to complete code add S90 i.e. VSKT105/16AS90

I

RRM,

I

DRM

TJ = 130 °C, gate open circuit 20 mA

50 Hz, circuit to base, all terminals shorted

INS

(1)

TJ = 130 °C, linear to 0.67 V

, gate open circuit 500 V/µs

DRM

12

3

3A

10

4.0

270

2500 (1 min)

3500 (1 s)

W

V

mAT

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Junction operating temperature range T

Storage temperature range T

Maximum internal thermal resistance,
junction to case per module

Typical thermal resistance,
case to heatsink

R

R

to heatsink

Mounting torque ± 10 %

busbar 3

Approximate weight

J

Stg

thJC

thCS

DC operation 0.135

Mounting surface flat, smooth and greased 0.1

A mounting compound is recommended and the
torque should be rechecked after a period of 3
hours to allow for the spread of the compound.

- 40 to 130

- 40 to 150

°C

K/W

5

Nm

110 g

4oz.

Case style JEDEC TO-240AA

ΔR CONDUCTION PER JUNCTION

DEVICES

VSK.105 0.04 0.05 0.05 0.08 0.12 0.03 0.05 0.06 0.08 0.12 °C/W

Note

• Table shows the increment of thermal resistance R

Document Number: 94416 For technical questions, contact: [e-mail]
Revision: 04-Jul-08 3

SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION

180° 120° 90° 60° 30° 180° 120° 90° 60° 30°

when devices operate at different conduction angles than DC

thJC

www.vishay.com

UNITS

VSK.105..PbF Series

Vishay High Power Products

130

120

110

100

90

80

70

Maximum Allowa ble Case Temperature (°C)

0 20 40 60 80 100 120

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics

130

120

110

100

90

80

70

Maximum Allowable Case Temperature (°C)

0 20406080100120140160180

Average On-state Current (A)

Fig. 2 - Current Ratings Characteristics

VSK.105.. Se ries
R (DC) = 0.27 K/W

thJC

30°

60°

VSK.105.. Se rie s
R (D C) = 0.27 K/ W

30°

60°

90°

Conduct ion Angle

90°

120°

thJC

Cond uct ion Perio d

120°

180°

Thyristor/Diode and Thyristor/Thyristor

(ADD-A-PAKTM Generation 5 Power Modules), 105 A

200

DC

180

180°
120°

160

90°
60°

140

30°

120

RM S Li m i t

100

DC

180°

80

60

40

20

0

Maximum Average On-state Power Loss (W)

0 20406080100120140160180

Average On-state Current (A)

Fig. 4 - On-State Power Loss Characteristics

1600

At Any Ra ted Load Condition And With

Rated V Applied Following Surge.

1500

1400

1300

1200

1100

1000

900

VSK.105.. Se rie s

800

Per Ju nc tio n

700

Peak Half Sine Wave On-state Current (A)

110100

Number O f Eq ual Amplitud e Half Cyc le C urrent Pulses (N)

RRM

Fig. 5 - Maximum Non-Repetitive Surge Current

Conduction Period

VSK.105.. Se ri e s
Pe r Ju nc t io n
T = 1 30 ° C

J

Init ial T = 130°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

160

140

120

100

80

60

40

20

0

Maximum Average On-state Power Loss (W)

180°
120°

90°
60°
30°

RM S Li m i t

Cond uction Angle

VSK.105.. Serie s

Pe r Ju nc t io n
T = 130°C

J

0 20406080100120

Average On-state Current (A)

Fig. 3 - On-State Power Loss Characteristics

1800

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conduc tion May Not Be Ma intained .

1600

1400

1200

1000

800

VSK.105.. Serie s
Per Junct ion

600

Peak Ha lf Sine Wave On-st at e Current (A)

0.01 0.1 1

Pulse Train Duration (s)

Init ia l T = 130°C

No Vo lta ge Reap p lied
Ra t e d V Re a p p l ie d

J

RRM

Fig. 6 - Maximum Non-Repetitive Surge Current

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94416

4 Revision: 04-Jul-08

VSK.105..PbF Series

Thyristor/Diode and Thyristor/Thyristor

(ADD-A-PAKTM Generation 5 Power Modules), 105 A

350

300

250

200

150

Conduction Angle

180°
120°

90°
60°
30°

100

VSK.105.. Serie s

50

Maximum Total On-st at e Power Loss (W)

0

0 40 80 120 160 200 240

Pe r M o du le

T = 13 0° C

J

Total RMS Output Current (A)

Fig. 7 - On-State Power Loss Characteristics

600

500

400

180°

(Sine)

180°

(Rec t)

300

200

2 x VSK.105.. Se ries

100

Maximum To ta l Po wer Loss (W)

0

04080120160200

Si n g l e Ph a se Br i d g e

Connected

T = 1 3 0° C

J

To t a l O u t p u t C u r re n t ( A )

Fig. 8 - On-State Power Loss Characteristics

R

t

h

S

A

=

0

.

2

0

.

K

1

/

W

K

/

0

.

3

K

/

W

0

.

5

K

/

W

0

.

7

K

/

W

1

K

/

W

2

K

/

W

W-

D

e

l

t

a

0 20406080100120140

Maximum Allowable Ambient Temperature (°C)

R

t

h

S

A

=

0

.

1

K

/

W

0

.

2

K

0.
3

K

/

0

.

5

K

/

0.
7

K

1

K

/

W

2

K

/

W

­D

e

l

/

W

W

W

/

W

t

a

R

020406080100120140

Maximum Allowable Ambient Temperature (°C)

Vishay High Power Products

R

900

800

700

600

500

120°

(Rec t)

400

300

200

Maximum Total Pow er Loss (W)

100

0

0 40 80 120 160 200 240 280

3 x VSK.105.. Se rie s

Th r e e P h a se B ri d g e

Connected

T = 130°C

J

Total Output Current (A)

R

t

h

S

A

=

0

.

1

K

/

W

­D

e

l

t

a

0

.

2

K

/

W

0

.

3

K

/

W

0

.

5

K

/

W

1

K

/

W

R

0 20406080100120140

Maximum Allowable Ambient Tempe rature (°C)

Fig. 9 - On-State Power Loss Characteristics

Document Number: 94416 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 04-Jul-08 5

VSK.105..PbF Series

Vishay High Power Products

700

I = 200 A

TM

100 A

600

500

400

300

200

VSK.105.. Se rie s
T = 125 °C

J

Thyristor/Diode and Thyristor/Thyristor

(ADD-A-PAKTM Generation 5 Power Modules), 105 A

1000

100

T = 2 5° C

J

T = 13 0 ° C

10

Insta ntaneous On-st at e Current (A)

1

0 0.5 1 1.5 2 2.5 3 3.5

Inst a nt a ne o us On -st at e Vo lta g e (V)

Fig. 10 - On-State Voltage Drop Characteristics

50 A

20 A

10 A

J

VSK.105.. Se rie s
Pe r J un c t io n

140

120

100

80

60

40

VSK.105.. Se rie s
T = 1 25 °C

J

I = 200 A

TM

100 A

50 A

20 A

10 A

100

10 20 30 40 50 60 70 80 90 100

Rate Of Fall Of On-state Current - di/dt (A/µs)

Maximum Reverse Recovery Charge - Q rr (µC)

20

Ma ximu m Re verse Rec ov ery Cu rren t - Irr ( A)

10 20 30 40 50 60 70 80 90 100

Rate Of Fall Of Forward Current - di/dt (A/µs)

Fig. 11 - Recovery Charge Characteristics Fig. 12 - Recovery Current Characteristics

1

Steady State Value:

R = 0. 27 K/ W

thJC

Transient Thermal Impedance Z (K/W)

thJC

(DC Operation)

0.1

VSK.105.. Se ries
Pe r J un c t io n

0.0 1

0.001 0.01 0.1 1 10

Square Wave Pulse Duration (s)

Fig. 13 - Thermal Impedance Z

Characteristics

thJC

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94416

6 Revision: 04-Jul-08

VSK.105..PbF Series

Thyristor/Diode and Thyristor/Thyristor

(ADD-A-PAKTM Generation 5 Power Modules), 105 A

100

Rectangular gate pulse

a)Recommended load line for

rated di/dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs

b)Recommended load line for

<= 30% rated di/ dt: 15 V, 40 ohms
tr = 1 µs, tp >= 6 µs

10

1

Instantaneous Gate Voltage (V)

ORDERING INFORMATION TABLE

Device code

VGD

IGD

0.1

0.001 0.01 0.1 1 10 100 1000

VSK T 105 / 16 S90 P

(1) PGM = 200 W, t p = 300 µs
(2) PGM = 60 W, t p = 1 m s
(3) PGM = 30 W, t p = 2 m s
(4) PGM = 12 W, t p = 5 m s

(a)

(b )

TJ = - 4 0 ° C

TJ = 25 °C

TJ = 125 °C

VSK.105. . Serie s

Instantaneous Gate Current (A)

Fre q ue nc y Lim it e d b y PG ( AV )

Fig. 14 - Gate Characteristics

Vishay High Power Products

(3)

(4)

(2) (1)

1 - Module type

2 - Circuit configuration (see end of datasheet)

3 - Current code

4 - Voltage code (see Voltage Ratings table)

5 - dV/dt code: S90 = dV/dt 1000 V/µs

6 - P = Lead (Pb)-free

(1)

Available with no auxiliary cathode

(for details see dimensions - link at the end of datasheet)

To specify change: 105 to 106

e.g.: VSKT106/16P etc.

Note

• To order the optional hardware go to www.vishay.com/doc?95172

51324

(1)

No letter = dV/dt 500 V/µs

6

Document Number: 94416 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 04-Jul-08 7

VSK.105..PbF Series

Vishay High Power Products

Thyristor/Diode and Thyristor/Thyristor

(ADD-A-PAKTM Generation 5 Power Modules), 105 A

CIRCUIT CONFIGURATION

VSKT

(1)

~

+

(2)

-

(3)

K2 G2

K1G1

(4) (7) (6)

(5)

Dimensions http://www.vishay.com/doc?95085

VSKH VSKL

G1

(4) (5)

K1

(1)

(3)

(2)

~

+

-

LINKS TO RELATED DOCUMENTS

(1)

(2)

(3)

~

+

-

K2

(7)

G2

(6)

VSKN

G1

(4) (5)

K1

(1)

(2)

(3)

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Document Number: 94416

8 Revision: 04-Jul-08

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay High Power Products

ADD-A-PAK Thyristor

Faston tab 2.8 x 0.8 (0.110 x 0.03)

35 REF.

21 ± 0.75

Screws M5 x 0.8

30 ± 0.5

29 ± 0.5

(1 ± 0.0197)

(1.18 ± 0.0197)

(0.8 ± 0.02953)

15 ± 0.5 (0.59 ± 0.0197)

6.2 (2 x) ± 0.2 (0.2 ± 0.0079)

Viti M5 x 0.8

80 ± 0.3 (3.15 ± 0.0118)

1

20 ± 0.5 (0.79 ± 0.0197)

92 ± 0.75 (3.6 ± 0.02953)

15.6 ± 0.5

(0.6 ± 0.0197)

18 (0.7) REF.

2

20 ± 0.5 (0.79 ± 0.0197)

3

45 76

6.3 ± 0.3 (0.2 ± 0.0118)

24 ± 0.5

(1 ± 0.0197)

30 ± 1 (1.18 ± 0.039)

Detail Z

With no auxiliary cathode

46

45 76

13.8 (0.54)

4 ± 0.2

(0.2 ± 0.0079)

13.8 REF.

Document Number: 95087 For technical questions concerning discrete products, contact: [e-mail]
Revision: 03-Aug-07 For technical questions concerning module products, contact: [e-mail]

5.8 ± 0.25
(0.2 ± 0.00984)

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1