C&H Technology VSK105PbF User Manual

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Thyristor/Diode and Thyristor/Thyristor

(ADD-A-PAK

VSK.105..PbF Series

Vishay High Power Products

TM

Generation 5 Power Modules), 105 A

FEATURES

• High voltage

ADD-A-PAK

TM

PRODUCT SUMMARY

I

T(AV)

or I

F(AV)

105 A

MECHANICAL DESCRIPTION

The Generation 5 of ADD-A-PAKTM modules combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior mechanical
ruggedness, thanks to the insertion of a solid copper
baseplate at the bottom side of the device. The Cu baseplate
allows an easier mounting on the majority of heatsink with
increased tolerance of surface roughness and improved
thermal spread.
The Generation 5 of AAP modules is manufactured without
hard mold, eliminating in this way any possible direct stress
on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop feature
already tested and proved as reliable on other Vishay HPP
modules.

• Industrial standard package

• Thick copper baseplate

RoHS

COMPLIANT

• UL E78996 approved

• 3500 V

isolating voltage

RMS

• Totally lead (Pb)-free

• Designed and qualified for industrial level

BENEFITS

• Up to 1600 V

• Fully compatible TO-240AA

• High surge capability

• Easy mounting on heatsink

DBC insulator

•Al

203

• Heatsink grounded

ELECTRICAL DESCRIPTION

These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

or I

T(AV)

F(AV)

I

O(RMS)

I

TSM,

I

FSM

2

t

I

2

√t 159.1 kA2√s

I

V

RRM

T

Stg

T

J

Document Number: 94416 For technical questions, contact: [e-mail]
Revision: 04-Jul-08 1

85 °C 105

As AC switch 235

50 Hz 1785

60 Hz 1870

50 Hz 15.91

60 Hz 14.52

Range 400 to 1600 V

- 40 to 150

- 40 to 130

kA2s

A

°C

www.vishay.com

VSK.105..PbF Series

Vishay High Power Products

Thyristor/Diode and Thyristor/Thyristor

(ADD-A-PAKTM Generation 5 Power Modules), 105 A

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM

RRM

REPETITIVE PEAK

REVERSE VOLTAGE

TYPE NUMBER

VOLTAGE

CODE

V

04 400 500 400

06 600 700 600

08 800 900 800

IRK.105

10 1000 1100 1000

12 1200 1300 1200

14 1400 1500 1400

16 1600 1700 1600

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current (thyristors) I

Maximum average forward current (diodes) I

Maximum continuous RMS on-state current,
as AC switch

T(AV)

F(AV)

I

O(RMS)

V

, MAXIMUM

RSM

NON-REPETITIVE PEAK

REVERSE VOLTAGE

V

180° conduction, half sine wave,
T

= 85 °C

C

or

I

(RMS)

V

, MAXIMUM REPETITIVE

DRM

PEAK OFF-STATE VOLTAGE,

GATE OPEN CIRCUIT

V

105

I

(RMS)

235

I

AT 130 °C

RRM,

I

DRM

mA

20

kA

mΩ

A

V

mA

2

s

2

√s

Maximum peak, one-cycle non-repetitive
on-state or forward current

2

Maximum I

Maximum I

Maximum value or threshold voltage V

t for fusing I2t

2

√t for fusing I2√t

T(TO)

Maximum value of on-state
slope resistance

Maximum peak on-state or forward voltage

Maximum non-repetitive rate of rise of
turned on current

Maximum holding current I

Maximum latching current I

I

TSM

or

I

FSM

(2)

r

t

V

TM

V

FM

dI/dt

H

L

t = 10 ms

t = 8.3 ms 1870

t = 10 ms

t = 8.3 ms 1570

t = 10 ms

t = 8.3 ms 2100

t = 10 ms

t = 8.3 ms 14.52

t = 10 ms

t = 8.3 ms 10.27

t = 10 ms

t = 8.3 ms 18.30

t = 0.1 to 10 ms, no voltage reapplied

(1)

(2)

= TJ maximum

T

J

Low level

High level

Low level

High level

ITM = π x I

IFM = π x I

TJ = 25 °C, from 0.67 V
I

= π x I

TM

No voltage
reapplied

100 % V
reapplied

= 25 °C, no voltage reapplied

T

J

RRM

Sinusoidal
half wave,
initial T

= TJ maximum

J

No voltage
reapplied

100 % V

RRM

Initial T

= TJ maximum

J

reapplied

= 25 °C, no voltage reapplied

T

J

(3)

TJ = TJ maximum

(4)

(3)

TJ = TJ maximum

(4)

T(AV)

TJ = 25 °C 1.64 V

F(AV)

,

, Ig = 500 mA, tr < 0.5 µs, tp > 6 µs

T(AV)

DRM

TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit

TJ = 25 °C, anode supply = 6 V, resistive load 400

1785

1500

2000

15.91

11.25

20.00

159.1 kA

0.80

0.85

2.37

2.25

150 A/µs

250

Notes

(1)I2

t for time tx = I2√t x √t

(2)

Average power = V

T(TO)

x

x I

+ rt x (I

T(AV)

T(RMS)

2

)

(3)

16.7 % x π x IAV < I < π x I

(4)

I> π x I

AV

AV

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94416

2 Revision: 04-Jul-08