C&H Technology VSK105 User Manual

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Suite 108
Minnetonka, MN 55345

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Technical

Application

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ADD-A-PAK Generation VII Power Modules

Thyristor/Diode and Thyristor/Thyristor, 105 A

ADD-A-PAK

PRODUCT SUMMARY

I

or I

T(AV)

F(AV)

MECHANICAL DESCRIPTION

The ADD-A-PAK Generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.

105 A

VSK.105.. Series

Vishay High Power Products

FEATURES

• High voltage

• Industrial standard package

• UL pending

• 3500 V

• Low thermal resistance

• Totally lead (Pb)-free

• Designed and qualified for industrial level

BENEFITS

• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate

• Up to 1600 V

• High surge capability

• Easy mounting on heatsink

ELECTRICAL DESCRIPTION

These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.

isolating voltage

RMS

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

or I

I

T(AV)

F(AV)

I

O(RMS)

I

TSM,

I

FSM

2

I

t

2

I

√t 200 kA2√s

V

RRM

T

Stg

T

J

Document Number: 94628 For technical questions, contact: [e-mail]
Revision: 08-Dec-08 1

85 °C 105

As AC switch 235

50 Hz 2000

60 Hz 2094

50 Hz 20

60 Hz 18.26

Range 400 to 1600 V

- 40 to 130 °C

kA2s

A

www.vishay.com

VSK.105.. Series

Vishay High Power Products

ADD-A-PAK Generation VII Power Modules

Thyristor/Diode and Thyristor/Thyristor, 105 A

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM

RRM

REPETITIVE PEAK

REVERSE VOLTAGE

TYPE NUMBER

VOLTAGE

CODE

V

04 400 500 400

06 600 700 600

08 800 900 800

VSK.105

10 1000 1100 1000

12 1200 1300 1200

14 1400 1500 1400

16 1600 1700 1600

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current (thyristors) I

Maximum average forward current (diodes) I

Maximum continuous RMS on-state current,
as AC switch

Maximum peak, one-cycle non-repetitive
on-state or forward current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t

Maximum value or threshold voltage V

Maximum value of on-state
slope resistance

Maximum peak on-state or forward voltage

Maximum non-repetitive rate of rise of
turned on current

Maximum holding current I

Maximum latching current I

Notes

(1)I2

t for time tx = I2√t x √t

(2)

Average power = V

(3)

16.7 % x π x IAV < I < π x I

(4)

I > π x I

AV

T(TO)

x

x I

+ rt x (I

T(AV)

AV

T(RMS)

T(AV)

F(AV)

I

O(RMS)

I

TSM

or

I

FSM

(1)

(2)

T(TO)

(2)

r

t

V

TM

V

FM

dI/dt

H

L

2

)

V

, MAXIMUM

RSM

NON-REPETITIVE PEAK

REVERSE VOLTAGE

V

180° conduction, half sine wave,
T

= 85 °C

C

or

I

(RMS)

t = 10 ms

t = 8.3 ms 2094

t = 10 ms

t = 8.3 ms 1760

t = 10 ms

t = 8.3 ms 18.26

t = 10 ms

t = 8.3 ms 12.91

No voltage
reapplied

100 % V
reapplied

No voltage
reapplied

100 % V
reapplied

t = 0.1 ms to 10 ms, no voltage reapplied

= TJ maximum

T

J

Low level

High level

Low level

High level

ITM = π x I

IFM = π x I

T

J

I

TM

(3)

TJ = TJ maximum

(4)

(3)

TJ = TJ maximum

(4)

T(AV)

TJ = 25 °C 1.8 V

F(AV)

= 25 °C, from 0.67 V

= π x I

, Ig = 500 mA, tr < 0.5 µs, tp > 6 µs

T(AV)

DRM

TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit

V

, MAXIMUM REPETITIVE

DRM

PEAK OFF-STATE VOLTAGE,

GATE OPEN CIRCUIT

I

(RMS)

Sinusoidal
half wave,

RRM

initial T

= TJ maximum

J

Initial T

= TJ maximum

RRM

J

,

V

105

235

2000

1682

20

14.14

200 kA

0.98

1.12

2.7

2.34

150 A/µs

250

TJ = 25 °C, anode supply = 6 V, resistive load 400

I

AT 130 °C

RRM,

I

DRM

mA

20

A

kA2s

V

mΩ

mA

2

√s

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94628

2 Revision: 08-Dec-08

VSK.105.. Series

ADD-A-PAK Generation VII Power Modules

Vishay High Power Products

Thyristor/Diode and Thyristor/Thyristor, 105 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak gate current I

Maximum peak negative gate voltage - V

GM

G(AV)

GM

GM

TJ = - 40 °C

Maximum gate voltage required to trigger V

GT

T

= 25 °C 2.5

J

T

= 125 °C 1.7

J

Anode supply = 6 V
resistive load

TJ = - 40 °C

Maximum gate current required to trigger I

Maximum gate voltage that will not trigger V

Maximum gate current that will not trigger I

GT

GD

GD

= 25 °C 150

J

= 125 °C 80

T

J

TJ = 125 °C, rated V

TJ = 125 °C, rated V

Anode supply = 6 V
resistive load

applied 0.25 V

DRM

applied 6 mA

DRM

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak reverse and off-state
leakage current at V

RRM

, V

DRM

RMS insulation voltage V

Maximum critical rate of rise of off-state voltage dV/dt T

I

RRM,

I

DRM

TJ = 130 °C, gate open circuit 20 mA

50 Hz, 1 s 3500 V

INS

= 130 °C, linear to 0.67 V

J

DRM

12

3

W

3A

10

4.0
V

270

mAT

1000 V/µs

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Junction operating temperature range T

Storage temperature range T

Maximum internal thermal resistance,
junction to case per leg

Typical thermal resistance,
case to heatsink per module

to heatsink

Mounting torque ± 10 %

busbar 3

Approximate weight

R

R

J

Stg

thJC

thCS

- 40 to 130 °C

DC operation 0.22

Mounting surface flat, smooth and greased 0.1

A mounting compound is recommended and the

4

torque should be rechecked after a period of
3 hours to allow for the spread of the compound.

75 g

2.7 oz.

°C/W

Nm

Case style JEDEC TO-240AA compatible

ΔR CONDUCTION PER JUNCTION

DEVICES

VSK.105.. 0.04 0.048 0.063 0.085 0.125 0.033 0.052 0.067 0.088 0.127 °C/W

Note

• Table shows the increment of thermal resistance R

SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION

180° 120° 90° 60° 30° 180° 120° 90° 60° 30°

when devices operate at different conduction angles than DC

thJC

UNITS

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Revision: 08-Dec-08 3

VSK.105.. Series

Vishay High Power Products

130

120

110

100

90

80

Maximum allowable case temperature (°C)

70

130

120

110

100

90

80

Maximum allowable case temperature (°C)

70

0 20406080100120140160180

RthJC (DC) = 0.22°C/W

180°
120°

90°
60°
30°

0 20406080100120

Average on-state current (A)

Fig. 1 - Current Ratings Characteristics

RthJC (DC) = 0.22°C/W

DC
180°

120°

90°
60°
30°

Average on-state current (A)

Fig. 2 - Current Ratings Characteristics

ADD-A-PAK Generation VII Power Modules

Thyristor/Diode and Thyristor/Thyristor, 105 A

260
240
220
200
180
160
140
120
100

80
60
40
20

0

Maximum average on-state power loss (W)

Fig. 4 - On-State Power Loss Characteristics

1800

1600

1400

1200

1000

Peak half sine wave on-state current (A)

800

Number of equal amplitude half cycle current pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

180°
120°

90°
60°
30°

RMS limit

Per leg, Tj = 130°C

0 20406080100120140160180

Average on-state current (A)

At any rated load condition and with

rated Vrrm app lied follow ing surg e

Per leg

Initial T j = Tj max

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100s

110100

DC

200

180

160

140

120

100

180°
120°

90°
60°
30°

RMS limit

2000

1800

1600

1400

Maximum Non-repetitive Surge Current

Versus Pulse Train Duration. Control

of conduction may not be maintained.

Initial T j = 130°C

No Voltage Reapplied

Rated Vrrm reapplied

80

60

40

20

0

Maximum average on-state power loss (W)

Per leg, Tj = 130°C

020406080100120

Average on-state current (A)

Fig. 3 - On-State Power Loss Characteristics

1200

1000

Peak half sine wave on-state current (A)

Per leg

800

0.01 0.1 1

Pulse train duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94628

4 Revision: 08-Dec-08

VSK.105.. Series

ADD-A-PAK Generation VII Power Modules

Thyristor/Diode and Thyristor/Thyristor, 105 A

400

350

300

250

200

150

100

50

Maximum total on-state power loss (W)

0

0 40 80 120 160 200 240

Total RMS output current (A)

700

600

500

400

∼

300

180°
120°

90°
60°
30°

VSK.105 Series

Per module

Tj = 130°C

0 20 40 60 80 100 120 140

Maximum allowable ambient temperature (°C)

Fig. 7 - On-State Power Loss Characteristics

180°

(sine)

180°
(rect)

Vishay High Power Products

RthSA = 0.1 °C/W

0.2 °C/W

0.3 °C/W

0.5 °C/W

0.7 °C/W
1 °C/W
2°C/W

RthSA = 0.1 °C/W

0.2 °C/W

0.3 °C/W

0.5 °C/W

0.7 °C/W
1 °C/W
2 °C/W

200

Maximum total power loss (W)

100

single phase bridge connected

0

0 40 80 120 160 200

Total output current (A)

Fig. 8 - On-State Power Loss Characteristics

900

800

700

600

500

(rect)

400

300

200

Maximum total power loss (W)

100

three phase bridge c onnec ted

0

0 40 80 120 160 200 240

Total output current (A)

Fig. 9 - On-State Power Loss Characteristics

2 x VSK.105 Series

Tj = 130°C

120°

3 x VSK.105 Series

Tj = 130°C

0 20 40 60 80 100 120 140

Maximum allowable ambient temperature (°C)

RthSA = 0.1 °C/W

0.2 °C/W

0.3 °C/W

0.5 °C/W
1 °C/W

0 20 40 60 80 100 120 140

Maximum allowable ambient temperature (°C)

Document Number: 94628 For technical questions, contact: [e-mail]

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Revision: 08-Dec-08 5

VSK.105.. Series

Vishay High Power Products

1000

Instantaneous on-state current (A)

1

(°C/W)

thJC

0.1

Steady state value
RthJC = 0.22 °C/W
(DC operation)

ADD-A-PAK Generation VII Power Modules

Thyristor/Diode and Thyristor/Thyristor, 105 A

Per leg

100

10

Tj = 130°C

Tj = 25°C

1

0.5 1.0 1.5 2.0 2.5 3.0 3.5

Instantaneous on-state voltage (V)

Fig. 10 - On-State Voltage Drop Characteristics

0.01

0.001

Transient thermal impedance Z

0.001 0.01 0.1 1 10

Square wave pulse duration (s)

Fig. 11 - Thermal Impedance Z

100

Rectangular gate pulse

a)Recommended load line for

rated di/d t: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs

b)Recommended load line for

<= 30% rated di/d t: 15 V, 40 ohms
tr = 1 µs, t p >= 6 µs

10

(b)

TJ = 25 ° C

TJ = 1 2 5 ° C

1

Instantaneous gate voltage (V)

VGD

IGD

0.1

0.001 0. 01 0.1 1 10 100 1000

IRK.105.. Series

VSK.

Instantaneous gate current (A)

(a)

Per leg

Characteristics

thJC

(1) PG M = 200 W, tp = 300 µs
(2) PG M = 60 W, tp = 1 m s
(3) PG M = 30 W, tp = 2 m s
(4) PG M = 12 W, tp = 5 m s

TJ = - 40 ° C

(3)

(4)

Frequency Limited by PG(AV)

(2) (1)

Fig. 12 - Gate Characteristics

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Document Number: 94628

6 Revision: 08-Dec-08

VSK.105.. Series

ADD-A-PAK Generation VII Power Modules

Thyristor/Diode and Thyristor/Thyristor, 105 A

ORDERING INFORMATION TABLE

Device code

Note

• To order the optional hardware go to www.vishay.com/doc?95172

CIRCUIT CONFIGURATION

VSKT

(1)

~

VSK T 105 / 16

1324

1 - Module type

2 - Circuit configuration (see end of datasheet)

3

- Current code (105 A)

4 - Voltage code (see Voltage Ratings table)

VSKH

(1)

Vishay High Power Products

VSKL

~

(1)

~

VSKN

(1)

-

1

4 5 7 6

1

G1
(4)

K1
(5)

(2)

(3)

+

-

K2
(7)G2(6)

2

3

4 5

2

3

G1

(4)

K1
(5)

(2)

(3)

+

-

1

2

3

7 6

(2)

(3)

+

-

K2
(7)G2(6)

1

2

3

4 5

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95368

G1

(4)

K1
(5)

(2)

(3)

+

+

Document Number: 94628 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 08-Dec-08 7

ADD-A-PAK Generation VII - Thyristor

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay High Power Products

Fast-on tab 2.8 x 0.8 (0.110 x 0.03)

35 REF.

22.6 ± 0.2

30 ± 0.5

(1.18 ± 0.020)

(0.89 ± 0.008)

Viti M5 x 0.8

Screws M5 x 0.8

29 ± 0.5

(1 ± 0.020)

15 ± 0.5 (0.59 ± 0.020)

6.3 ± 0.2 (0.248 ± 0.008)

18 (0.7) REF.

80 ± 0.3 (3.15 ± 0.012)

2

1

20 ± 0.5 (0.79 ± 0.020)

20 ± 0.5 (0.79 ± 0.020)

92 ± 0.75 (3.6 ± 0.030)

15.5 ± 0.5

(0.6 ± 0.020)

3

4 5 7 6

6.7 ± 0.3 (0.26 ± 0.012)

24 ± 0.5

(1 ± 0.020)

30 ± 1 (1.18 ± 0.039)

4 ± 0.2 (0.157 ± 0.008)

5.8 ± 0.25 (0.228 ± 0.010)

Document Number: 95368 For technical questions concerning discrete products, contact: [e-mail]
Revision: 11-Nov-08 For technical questions concerning module products, contact: [e-mail]

www.vishay.com

1

VISHAY HIGH POWER PRODUCTS

Modules

Mounting Instructions for

ADD-A-PAK Generation VII

Generation VII ADD-A-PAK (AAP) power modules combine
the excellent thermal performance enabled by a direct
bonded copper (Al2O3) substrate, superior mechanical
ruggedness, and an environmentally friendly manufacturing
process that eliminates the use of hard molds, thus reducing
direct stresses on the leads. To prevent axial pull-out, the
electrical terminals are co-molded to the module housing.

The VSK series of AAP modules uses glass passivated and
Schottky power diodes and thyristors in circuit configurations
including common anode, common cathode, half-bridge, and
single switch. The semiconductors are internally connected
through wire-bonding and electrically isolated from the
bottom baseplate, allowing the use of a common heatsink
and enabling a more compact overall assembly.

INTRODUCTION

Major AAP Generation VII module features

• High blocking voltage up to 1600 V

• Industrial standard package style, fully compatible with
TO-240AA

• High isolation capability up to V

• High surge capability with I

• No toxic material: Completely lead (Pb)-free, RoHS and UL
compliant

• Elimination of copper base plate reduces weight to 75 g

• Elimination of process steps requiring usage of chemicals
and related waste treatment promotes a cleaner and more
environmentally friendly manufacturing process

These features allow AAP Generation VII modules to fit into
existing standardized assembly processes. Important factors
in the assembly process include

• Heatsink design

• PCB, busbar, and cable design

• Power leads size/area

• Distance from adjacent heat-generating parts

The implications of these items and the requirements for
assembly of AAP Generation VII modules are discussed
over the following pages.

FSM

= 3500 V

RMS

up to 3000 A

Application Note

SPECIFYING THE HEATSINK

The heat generated by the module has to be dissipated with
a heatsink. Typically natural or forced air cooling is used.

To optimize the device performance, the contact surface of
the heatsink must be flat, with a recommended flatness of
≤ 0.03 mm (≤ 1.18 mils) and a levelling depth of less than

0.02 mm (≤ 0.79 mils), according to DIN/ISO 1302. A milled
or machined surface is generally satisfactory if prepared with
tools in good working condition. The heatsink mounting
surface must be clean, with no dirt, corrosion, or surface
oxide. It is very important to keep the mounting surface free
from particles exceeding 0.05 mm (2 mils) in thickness,
provided a thermal compound is used.

MOUNTING OPERATIONS

The AAP Generation VII modules are designed with an
exposed DBC Al2O3 substrate.

This is used to optimize the thermal behavior of the module.
To reduce the risk of damage during mounting, the ceramic
has been given additional mechanical ruggedness in the
form of two separate 15.8 mm by 21.1 mm (0.62" by 0.83")
pieces of DBC substrate, which can be seen in the photo
below.

APPLICATION NOTE

Before mounting, inspect the module to insure that the
contact surface of the bottom substrate is clean and free of
any lumps or bulges that could damage the device or impede
heat transfer across its surface.

Document Number: 95043 For technical questions, contact: [e-mail]
Revision: 17-Dec-08 1

www.vishay.com

Mounting Instructions for

ADD-A-PAK Generation VII

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 95043

2 Revision: 17-Dec-08

Application Note

Vishay High Power Products

APPLICATION NOTE

Next, make a uniform coating on the heatsink mounting
surfaces and module substrate with a good quality thermal
compound. Screen printing of the compound is
recommended, as well as direct application through a roller
or spatula. The datasheet values for thermal resistance
assume a uniform layer of thermal compound with a
maximum thickness of 0.08 mm. The thermal conductivity of
the compound should be no less than 0.5 W/mK. Apply
uniform pressure on the package to force the compound to
spread over the entire contact area, and check the device
bottom surface to verify full and uniform coverage.

Bolt the module to the heatsink using the two fixing holes.

An even amount of torque should be applied for each
individual mounting screw. An M6 screw should be used with
lock washers. A torque wrench, which is accurate in the
specified range, must be used in mounting the module to
achieve optimum results. The first mounting screw should be
tightened to one third of the recommended torque; the
second screw should then be tightened to the same torque.
Full tightening of both the screws can then be completed by
applying the recommended torque (see data in bulletins).
Over-tightening the mounting screw may lead to deformation
of the package, which would hence increase the thermal
resistance and damage the semiconductors. After a period of
three hours, check the torque with a final tightening in
opposite sequence to allow the spread of the compound.

Power terminals can be screwed to busbars and/or flexible
cables with eyelets.

We recommend the use of M5 screws with spring washers.
Users should consult published datasheets to determine the
optimal torque.

AAP Generation VII modules are designed to guarantee a
good and reliable contact even at 3 ± 10 % Nm on a busbar,
so there is no need to apply an especially high level of force
to obtain a good and reliable connection.

SOLDERING TO THE PCB

The signal terminal (gate and auxiliary cathode) pins of AAP
Gen VII modules based on thyristors can be soldered to the
PCB using hand iron or wave soldering processes.

The PCB should be designed with appropriate tolerances on
the hole diameters, and soldering must be done without
imposing any mechanical stress on the module pins (pulling
and tensioning the pins).

To prevent overheating of the device, the soldering time
should not exceed 8 to 10 seconds at a temperature of
260 °C.

Alternatively, a fast-on cable connector can be used to
contact the signal pins.