C&H Technology VSK105 User Manual

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ADD-A-PAK Generation VII Power Modules

Thyristor/Diode and Thyristor/Thyristor, 105 A

ADD-A-PAK

PRODUCT SUMMARY

I

or I

T(AV)

F(AV)

MECHANICAL DESCRIPTION

The ADD-A-PAK Generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.

105 A

VSK.105.. Series

Vishay High Power Products

FEATURES

• High voltage

• Industrial standard package

• UL pending

• 3500 V

• Low thermal resistance

• Totally lead (Pb)-free

• Designed and qualified for industrial level

BENEFITS

• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate

• Up to 1600 V

• High surge capability

• Easy mounting on heatsink

ELECTRICAL DESCRIPTION

These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.

isolating voltage

RMS

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

or I

I

T(AV)

F(AV)

I

O(RMS)

I

TSM,

I

FSM

2

I

t

2

I

√t 200 kA2√s

V

RRM

T

Stg

T

J

Document Number: 94628 For technical questions, contact: [e-mail]
Revision: 08-Dec-08 1

85 °C 105

As AC switch 235

50 Hz 2000

60 Hz 2094

50 Hz 20

60 Hz 18.26

Range 400 to 1600 V

- 40 to 130 °C

kA2s

A

www.vishay.com

VSK.105.. Series

Vishay High Power Products

ADD-A-PAK Generation VII Power Modules

Thyristor/Diode and Thyristor/Thyristor, 105 A

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM

RRM

REPETITIVE PEAK

REVERSE VOLTAGE

TYPE NUMBER

VOLTAGE

CODE

V

04 400 500 400

06 600 700 600

08 800 900 800

VSK.105

10 1000 1100 1000

12 1200 1300 1200

14 1400 1500 1400

16 1600 1700 1600

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current (thyristors) I

Maximum average forward current (diodes) I

Maximum continuous RMS on-state current,
as AC switch

Maximum peak, one-cycle non-repetitive
on-state or forward current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t

Maximum value or threshold voltage V

Maximum value of on-state
slope resistance

Maximum peak on-state or forward voltage

Maximum non-repetitive rate of rise of
turned on current

Maximum holding current I

Maximum latching current I

Notes

(1)I2

t for time tx = I2√t x √t

(2)

Average power = V

(3)

16.7 % x π x IAV < I < π x I

(4)

I > π x I

AV

T(TO)

x

x I

+ rt x (I

T(AV)

AV

T(RMS)

T(AV)

F(AV)

I

O(RMS)

I

TSM

or

I

FSM

(1)

(2)

T(TO)

(2)

r

t

V

TM

V

FM

dI/dt

H

L

2

)

V

, MAXIMUM

RSM

NON-REPETITIVE PEAK

REVERSE VOLTAGE

V

180° conduction, half sine wave,
T

= 85 °C

C

or

I

(RMS)

t = 10 ms

t = 8.3 ms 2094

t = 10 ms

t = 8.3 ms 1760

t = 10 ms

t = 8.3 ms 18.26

t = 10 ms

t = 8.3 ms 12.91

No voltage
reapplied

100 % V
reapplied

No voltage
reapplied

100 % V
reapplied

t = 0.1 ms to 10 ms, no voltage reapplied

= TJ maximum

T

J

Low level

High level

Low level

High level

ITM = π x I

IFM = π x I

T

J

I

TM

(3)

TJ = TJ maximum

(4)

(3)

TJ = TJ maximum

(4)

T(AV)

TJ = 25 °C 1.8 V

F(AV)

= 25 °C, from 0.67 V

= π x I

, Ig = 500 mA, tr < 0.5 µs, tp > 6 µs

T(AV)

DRM

TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit

V

, MAXIMUM REPETITIVE

DRM

PEAK OFF-STATE VOLTAGE,

GATE OPEN CIRCUIT

I

(RMS)

Sinusoidal
half wave,

RRM

initial T

= TJ maximum

J

Initial T

= TJ maximum

RRM

J

,

V

105

235

2000

1682

20

14.14

200 kA

0.98

1.12

2.7

2.34

150 A/µs

250

TJ = 25 °C, anode supply = 6 V, resistive load 400

I

AT 130 °C

RRM,

I

DRM

mA

20

A

kA2s

V

mΩ

mA

2

√s

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94628

2 Revision: 08-Dec-08

VSK.105.. Series

ADD-A-PAK Generation VII Power Modules

Vishay High Power Products

Thyristor/Diode and Thyristor/Thyristor, 105 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak gate current I

Maximum peak negative gate voltage - V

GM

G(AV)

GM

GM

TJ = - 40 °C

Maximum gate voltage required to trigger V

GT

T

= 25 °C 2.5

J

T

= 125 °C 1.7

J

Anode supply = 6 V
resistive load

TJ = - 40 °C

Maximum gate current required to trigger I

Maximum gate voltage that will not trigger V

Maximum gate current that will not trigger I

GT

GD

GD

= 25 °C 150

J

= 125 °C 80

T

J

TJ = 125 °C, rated V

TJ = 125 °C, rated V

Anode supply = 6 V
resistive load

applied 0.25 V

DRM

applied 6 mA

DRM

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak reverse and off-state
leakage current at V

RRM

, V

DRM

RMS insulation voltage V

Maximum critical rate of rise of off-state voltage dV/dt T

I

RRM,

I

DRM

TJ = 130 °C, gate open circuit 20 mA

50 Hz, 1 s 3500 V

INS

= 130 °C, linear to 0.67 V

J

DRM

12

3

W

3A

10

4.0
V

270

mAT

1000 V/µs

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Junction operating temperature range T

Storage temperature range T

Maximum internal thermal resistance,
junction to case per leg

Typical thermal resistance,
case to heatsink per module

to heatsink

Mounting torque ± 10 %

busbar 3

Approximate weight

R

R

J

Stg

thJC

thCS

- 40 to 130 °C

DC operation 0.22

Mounting surface flat, smooth and greased 0.1

A mounting compound is recommended and the

4

torque should be rechecked after a period of
3 hours to allow for the spread of the compound.

75 g

2.7 oz.

°C/W

Nm

Case style JEDEC TO-240AA compatible

ΔR CONDUCTION PER JUNCTION

DEVICES

VSK.105.. 0.04 0.048 0.063 0.085 0.125 0.033 0.052 0.067 0.088 0.127 °C/W

Note

• Table shows the increment of thermal resistance R

SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION

180° 120° 90° 60° 30° 180° 120° 90° 60° 30°

when devices operate at different conduction angles than DC

thJC

UNITS

Document Number: 94628 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 08-Dec-08 3