C&H Technology VS-HFA90FA120 User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

www.vishay.com

SOT-227

PRODUCT SUMMARY

V

R

V

(typical) 2.46 V

F

t

(typical) 35 ns

rr

per module at T

I

F(AV)

C

Vishay Semiconductors

HEXFRED®

Ultrafast Soft Recovery Diode, 90 A

FEATURES

• Fast recovery time characteristic

• Electrically isolated base plate

• Large creepage distance between terminal

• Simplified mechanical designs, rapid assembly

• Compliant to RoHS Directive 2011/65/EU

• Designed and qualified for industrial level

DESCRIPTION/APPLICATIONS

The dual diode series configuration (VS-HFA90FA120) is
used for output rectification or freewheeling/clamping
operation and high voltage application.

1200 V

90 A at 63 °C

The semiconductor in the SOT-227 Gen II package is
isolated from the copper base plate, allowing for common
heatsinks and compact assemblies to be built.
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.

VS-HFA90FA120

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Cathode to anode breakdown voltage V

Continuous forward current, per leg I

Single pulse forward current, per leg I

Maximum power dissipation, per leg P

RMS isolation voltage V

Operating junction and storage
temperature range

T

J

FSM

ISOL

, T

R

F

D

TC = 83 °C 45

TJ = 25 °C 400

TC = 83 °C 139

T

= 100 °C 104

C

Any terminal to case, t = 1 min 2500 V

Stg

1200 V

A

W

- 55 to 150 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Forward voltage V

Reverse leakage current I

Junction capacitance C

V

RM

IR = 100 μA 1200 - -

BR

IF = 25 A

I

= 40 A - 2.68 3.3

F

I

= 25 A, TJ = 125 °C - 2.22 -

FM

F

I

= 40 A, TJ = 125 °C - 2.52 -

F

= 25 A, TJ = 150 °C - 2.12 2.55

I

F

I

= 40 A, TJ = 150 °C - 2.43 2.96

F

VR = VR rated

T

= 125 °C, VR = VR rated - 0.5 2

J

T

= 150 °C, VR = VR rated - 2 5

J

VR = 1200 V See fig. 3 - 30 - pF

T

See fig. 1

See fig. 2

- 2.46 3.0

-1.575μA

V

mA

Revision: 29-Feb-12

1

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

, [e-mail], [e-mail]

Document Number: 94690

VS-HFA90FA120

VR - Reverse Voltage (V)

I

R

- Reverse Current (μA)

0.01

0.1

1

10

100

1000

10 000

0 100 200 300 400 500 600

T

J

= 150 °C

T

J

= 125 °C

T

J

= 25 °C

www.vishay.com

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 35 -

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

rr

= 25 °C

J

T

= 125 °C - 130 -

J

TJ = 25 °C - 6.8 -

T

= 125 °C - 11.5 -

J

TJ = 25 °C - 270 -

T

= 125 °C - 740 -

J

I

= 40 A

F

/dt = - 200 A/μs

dI

F

= 200 V

V

R

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Junction to case, single leg conducting

Case to heatsink R

Weight -30- g

Mounting torque -1.3-Nm

R

thJC

thCS

Flat, greased and surface - 0.10 -

Vishay Semiconductors

-80-

--0.48

nsT

A

nC

°C/WJunction to case, both legs conducting - - 0.24

1000

T

= 150 °C

J

100

= 125 °C

T

J

- Instantaneous Forward Current (A)

F

I

10

1

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6

T

= 25 °C

J

VF - Forward Voltage Drop (V)

Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage

Revision: 29-Feb-12

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

2

, [e-mail], [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Document Number: 94690

www.vishay.com

VR - Reverse Voltage (V)

C

T

-

Junction Capacitance (pF)

10

100

1000

1 10 100 1000 10 000

Z

thJC

-

Thermal Impedance (°C/W)

t1 - Rectangular Pulse Duration (s)

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10

DC

P

DM

t

2

t

1

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

D = 0.75

D = 0.20

D = 0.25

D = 0.33

D = 0.50

Single pulse

(thermal resistance)

I

F(AV) -

Average Forward Current (A)

Allowable Case Temperature (°C)

0

25

50

75

100

125

150

175

0 102030405060708090

DC

Square wave (d = 0.5)

80 % rated V

R

applied

VS-HFA90FA120

Vishay Semiconductors

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

Fig. 4 - Maximum Thermal Impedance Z

Fig. 5 - Maximum Allowable Case Temperature vs. Average

Revision: 29-Feb-12

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Forward Current (Per Leg)

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Characteristics (Per Leg)

thJC

300

250

200

150

100

50

Average Power Loss (W)

0

0 1020304050607080

Fig. 6 - Forward Power Loss Characteristics (Per Leg)

3

, [e-mail], [e-mail]

DC

I

Average Forward Current (A)

F(AV) -

RMS limit

D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75

Document Number: 94690

www.vishay.com

Q

rr

(nC)

dIF/dt (A/μs)

0

250

500

750

1000

1250

1500

100 1000

25 °C

IF = 40 A

I

F

= 20 A

V

R

= 200 V

125 °C

dIF/dt (A/μs)

I

RR

(A)

0

10

20

30

100 1000

25 °C

IF = 40 A

V

R

= 200 V

125 °C

IF = 20 A

IRFP250

D.U.T.

L = 70 μH

V

R

= 200 V

0.01 Ω

G

D

S

dIF/dt

adjust

VS-HFA90FA120

Vishay Semiconductors

200

IF = 40 A

125 °C

150

100

(ns)

rr

t

25 °C

50

0

100 1000

I

= 20 A

F

V

= 200 V

R

dIF/dt (A/μs)

Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt

Revision: 29-Feb-12

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 9 - Typical Reverse Recovery Current vs. dI

F

/dt

Fig. 10 - Reverse Recovery Parameter Test Circuit

4

, [e-mail], [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Document Number: 94690

www.vishay.com

Q

rr

0.5 I

RRM

dI

(rec)M

/dt

0.75 I

RRM

I

RRM

t

rr

t

b

t

a

I

F

dIF/dt

0

(1)

(2)

(3)

(4)

(5)

(1) dI

F

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

rr

- reverse recovery time measured
from zero crossing point of negative
going I

F

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

rr

- area under curve dened by t

rr

and I

RRM

trr x I

RRM

2

Q

rr

=

(5) dI

(rec)M

/dt - peak rate of change of

current during t

b

portion of t

rr

1

43

2

Lead Assignment

1

4

2

3

VS-HFA90FA120

Vishay Semiconductors

Fig. 11 - Reverse Recovery Waveform and Definitions

ORDERING INFORMATION TABLE

CIRCUIT CONFIGURATION

CIRCUIT

2 separate diodes,
parallel pin-out

Revision: 29-Feb-12

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Device code

HFVS- A 90 F A 120

51 32 4 6 7

1

- Vishay Semiconductors product

2

- HEXFRED® family

3

- Process designator (A = Electron irradiated)

4

- Average current (90 = 90 A)

5

- Circuit configuration (2 separate diodes, parallel pin-out)

- Package indicator (SOT-227 standard isolated base)

6

- Voltage rating (120 = 1200 V)

7

CONFIGURATION CODE

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

CIRCUIT

F

CIRCUIT DRAWING

5

, [e-mail], [e-mail]

Document Number: 94690

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Revision: 12-Mar-12

1

Document Number: 91000