C&H Technology VS-HFA90FA120 User Manual
6121 Baker Road,
Suite 108
Minnetonka, MN 55345
www.chtechnology.com
Phone (952) 933-6190
Fax (952) 933-6223
1-800-274-4284
Thank you for downloading this document from C&H Technology, Inc.
Please contact the C&H Technology team for the following questions -
Technical
Application
Assembly
Availability
Pricing
Phone – 1-800-274-4284
E-Mail – sales@chtechnology.com
www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com
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SOT-227
PRODUCT SUMMARY
V
R
V
(typical) 2.46 V
F
t
(typical) 35 ns
rr
per module at T
I
F(AV)
C
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 90 A
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• Compliant to RoHS Directive 2011/65/EU
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
The dual diode series configuration (VS-HFA90FA120) is
used for output rectification or freewheeling/clamping
operation and high voltage application.
1200 V
90 A at 63 °C
The semiconductor in the SOT-227 Gen II package is
isolated from the copper base plate, allowing for common
heatsinks and compact assemblies to be built.
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.
VS-HFA90FA120
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode breakdown voltage V
Continuous forward current, per leg I
Single pulse forward current, per leg I
Maximum power dissipation, per leg P
RMS isolation voltage V
Operating junction and storage
temperature range
T
J
FSM
ISOL
, T
R
F
D
TC = 83 °C 45
TJ = 25 °C 400
TC = 83 °C 139
T
= 100 °C 104
C
Any terminal to case, t = 1 min 2500 V
Stg
1200 V
A
W
- 55 to 150 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
V
RM
IR = 100 μA 1200 - -
BR
IF = 25 A
I
= 40 A - 2.68 3.3
F
I
= 25 A, TJ = 125 °C - 2.22 -
FM
F
I
= 40 A, TJ = 125 °C - 2.52 -
F
= 25 A, TJ = 150 °C - 2.12 2.55
I
F
I
= 40 A, TJ = 150 °C - 2.43 2.96
F
VR = VR rated
T
= 125 °C, VR = VR rated - 0.5 2
J
T
= 150 °C, VR = VR rated - 2 5
J
VR = 1200 V See fig. 3 - 30 - pF
T
See fig. 1
See fig. 2
- 2.46 3.0
-1.575μA
V
mA
Revision: 29-Feb-12
1
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94690
VS-HFA90FA120
VR - Reverse Voltage (V)
I
R
- Reverse Current (μA)
0.01
0.1
1
10
100
1000
10 000
0 100 200 300 400 500 600
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
www.vishay.com
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 35 -
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
= 25 °C
J
T
= 125 °C - 130 -
J
TJ = 25 °C - 6.8 -
T
= 125 °C - 11.5 -
J
TJ = 25 °C - 270 -
T
= 125 °C - 740 -
J
I
= 40 A
F
/dt = - 200 A/μs
dI
F
= 200 V
V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case, single leg conducting
Case to heatsink R
Weight -30- g
Mounting torque -1.3-Nm
R
thJC
thCS
Flat, greased and surface - 0.10 -
Vishay Semiconductors
-80-
--0.48
nsT
A
nC
°C/WJunction to case, both legs conducting - - 0.24
1000
T
= 150 °C
J
100
= 125 °C
T
J
- Instantaneous Forward Current (A)
F
I
10
1
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
T
= 25 °C
J
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 29-Feb-12
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 94690
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