C&H Technology VS-HFA220FA120 User Manual

6121 Baker Road, Suite 108 Minnetonka, MN 55345
www.chtechnology.com
Fax (952) 933-6223
1-800-274-4284
Thank you for downloading this document from C&H Technology, Inc.
Please contact the C&H Technology team for the following questions -
Technical
Application
Assembly
Availability
Pricing
Phone – 1-800-274-4284
E-Mail – sales@chtechnology.com
www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com
www.vishay.com
SOT-227
PRODUCT SUMMARY
V
R
V
(typical) 2.68 V
F
t
(typical) 58 ns
rr
per module at T
I
F(AV)
C
VS-HFA220FA120
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 220 A
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION/APPLICATIONS
The dual diode series configuration (VS-HFA220FA120) is used for output rectification or freewheeling/clamping
1200 V
220 A at 38 °C
operation and high voltage application. The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. These modules are intended for general applications such as HV power supplies, electronic welders, motor control and inverters.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
Continuous forward current I
Single pulse forward current I
Maximum power dissipation per leg P
RMS isolation voltage V
Operating junction and storage temperature range
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage
Forward voltage V
Reverse leakage current I
Note
(1)
Revision: 22-Mar-12
R
(1)
F
FSM
D
ISOL
T
, T
J
V
BR
FM
RM
Maximum continuous forward current must be limited at 100 A to do not exceed the maximum temperature of power terminals.
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IR = 100 μA 1200 - -
IF = 100 A - 2.68 3.60
I
= 200 A - 3.41 4.70
F
= 100 A, TJ = 150 °C - 2.62 2.89
I
F
I
= 200 A, TJ = 150 °C - 3.59 3.89
F
VR = VR rated - 10 75 μA
T
= 125 °C, VR = VR rated - 2 -
J
T
= 150 °C, VR = VR rated - 6 15
J
TC = 68 °C 110
TJ = 25 °C 700
TC = 25 °C 500
T
= 100 °C 400
C
Any terminal to case, t = 1 minute 2500 V
Stg
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1200 V
- 55 to 150 °C
Document Number: 93636
A
W
V
mA
VS-HFA220FA120
0.0001
0.001
0.01
0.1
1
10
0 200 400 600 800 1000 1200
I
R
- Reverse Current (μA)
VR- Reverse Voltage (V)
TJ= 150 °C
TJ= 125 °C
TJ= 25 °C
www.vishay.com
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
= 1 A
I
F
dI
/dt = - 200 A/μs
F
V
= 30 V
R
= 50 A
I
F
/dt = - 200 A/μs
dI
F
= 200 V
V
R
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
Junction capacitance C
rr
RRM
TJ = 25 °C
= 25 °C
T
J
T
= 125 °C - 255 -
J
TJ = 25 °C - 15 -
T
= 125 °C - 22.5 -
J
TJ = 25 °C - 1150 -
rr
T
= 125 °C - 2850 -
J
VR = 1200 V - 53 - pF
T
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case, single leg conducting
Case to heatsink R
Weight -30- g
Mounting torque -1.3-Nm
R
thJC
thCS
Flat, greased and surface - 0.10 -
Vishay Semiconductors
-58-
ns
-157-
A
nC
--0.25
°C/WJunction to case, both legs conducting - - 0.125
1000
TJ= 150 °C
TJ= 125 °C
= 25 °C
T
J
10
1
0.5 1 1.5 2 2.5 3 3.5 4
- Instantaneous Forward Current (A) I
100
F
VF- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 22-Mar-12
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
Document Number: 93636
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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