C&H Technology VS-HFA220FA120 User Manual

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Application
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SOT-227
PRODUCT SUMMARY
V
R
V
(typical) 2.68 V
F
t
(typical) 58 ns
rr
per module at T
I
F(AV)
C
VS-HFA220FA120
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 220 A
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION/APPLICATIONS
The dual diode series configuration (VS-HFA220FA120) is used for output rectification or freewheeling/clamping
1200 V
220 A at 38 °C
operation and high voltage application. The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. These modules are intended for general applications such as HV power supplies, electronic welders, motor control and inverters.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
Continuous forward current I
Single pulse forward current I
Maximum power dissipation per leg P
RMS isolation voltage V
Operating junction and storage temperature range
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage
Forward voltage V
Reverse leakage current I
Note
(1)
Revision: 22-Mar-12
R
(1)
F
FSM
D
ISOL
T
, T
J
V
BR
FM
RM
Maximum continuous forward current must be limited at 100 A to do not exceed the maximum temperature of power terminals.
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IR = 100 μA 1200 - -
IF = 100 A - 2.68 3.60
I
= 200 A - 3.41 4.70
F
= 100 A, TJ = 150 °C - 2.62 2.89
I
F
I
= 200 A, TJ = 150 °C - 3.59 3.89
F
VR = VR rated - 10 75 μA
T
= 125 °C, VR = VR rated - 2 -
J
T
= 150 °C, VR = VR rated - 6 15
J
TC = 68 °C 110
TJ = 25 °C 700
TC = 25 °C 500
T
= 100 °C 400
C
Any terminal to case, t = 1 minute 2500 V
Stg
1
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1200 V
- 55 to 150 °C
Document Number: 93636
A
W
V
mA
VS-HFA220FA120
0.0001
0.001
0.01
0.1
1
10
0 200 400 600 800 1000 1200
I
R
- Reverse Current (μA)
VR- Reverse Voltage (V)
TJ= 150 °C
TJ= 125 °C
TJ= 25 °C
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
= 1 A
I
F
dI
/dt = - 200 A/μs
F
V
= 30 V
R
= 50 A
I
F
/dt = - 200 A/μs
dI
F
= 200 V
V
R
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
Junction capacitance C
rr
RRM
TJ = 25 °C
= 25 °C
T
J
T
= 125 °C - 255 -
J
TJ = 25 °C - 15 -
T
= 125 °C - 22.5 -
J
TJ = 25 °C - 1150 -
rr
T
= 125 °C - 2850 -
J
VR = 1200 V - 53 - pF
T
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case, single leg conducting
Case to heatsink R
Weight -30- g
Mounting torque -1.3-Nm
R
thJC
thCS
Flat, greased and surface - 0.10 -
Vishay Semiconductors
-58-
ns
-157-
A
nC
--0.25
°C/WJunction to case, both legs conducting - - 0.125
1000
TJ= 150 °C
TJ= 125 °C
= 25 °C
T
J
10
1
0.5 1 1.5 2 2.5 3 3.5 4
- Instantaneous Forward Current (A) I
100
F
VF- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 22-Mar-12
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
Document Number: 93636
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0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
t1- Rectangular Pulse Duration (s)
0.75
0.50
0.33
0.25
0.20
P
DM
t
2
t
1
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
DC
0
100
200
300
400
500
600
700
800
0 40 80 120 160 200
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
RMS Limit
DC
D = 0.05 D = 0.10 D = 0.20 D = 0.33 D = 0.50
0010010
50
100
150
200
250
300
VR = 200 V
IF = 50 A, TJ = 25 °C
IF = 50 A, TJ = 125 °C
dIF/dt (A/μs)
t
rr
(ns)
VS-HFA220FA120
Vishay Semiconductors
Fig. 3 - Maximum Thermal Impedance Z
175
150
125
100
DC
Allowable Case Temperature (°C)
75
50
Square wave (d = 0.5)
25
0
0 20 40 60 80 100 120 140 160 180
applied
Rated V
R
I
- Average Forward Current (A)
F(AV)
Fig. 4 - Maximum Allowable Case Temperature vs. Average
Characteristics (Per Leg)
thJC
Fig. 6 - Typical Reverse Recovery Time vs. dI
Forward Current (Per Leg)
4000
3500
3000
2500
2000
(ns)
rr
Q
1500
1000
Fig. 5 - Forward Power Losses Characteristics (Per Leg)
Revision: 22-Mar-12
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
500
0
100 1000
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VR = 200 V
IF = 50 A, TJ = 125 °C
IF = 50 A, TJ = 25 °C
dIF/dt (A/μs)
Fig. 7 - Typical Stored Charge vs. dI
Document Number: 93636
/dt
F
/dt
F
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IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dIF/dt
adjust
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dIF/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured from zero crossing point of negative going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
trr x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
VS-HFA220FA120
Vishay Semiconductors
50
40
30
(A)
RR
I
IF = 50 A, TJ = 125 °C
20
10
IF = 50 A, TJ = 25 °C
0
dIF/dt (A/μs)
Fig. 8 - Typical Peak Recovery Current vs. dIF/dt Fig. 9 - Typical Junction Capacitance vs. Reverse Voltage
Note
(1)
Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V
REV
x VFM at (I
F(AV)
REV
VR = 200 V
) x R
thJC
1000100
;
/D) (see fig. 5);
F(AV)
1000
100
Junction Capacitance (pF)
-
T
C
10
10 100 1000 10 000
VR - Reverse Voltage (V)
R
Revision: 22-Mar-12
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 10 - Reverse Recovery Parameter Test Circuit
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 11 - Reverse Recovery Waveform and Definitions
4
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Document Number: 93636
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ORDERING INFORMATION TABLE
VS-HFA220FA120
Vishay Semiconductors
Device code
CIRCUIT CONFIGURATION
CIRCUIT
2 separate diodes, parallel pin-out
CIRCUIT
CONFIGURATION CODE
HFVS- A 220 F A 120
51 32 4 6 7
1
- Vishay Semiconductors product
2
- HEXFRED® family
3
- Process designator (A = Electron irradiated)
4
- Average current (220 = 220 A)
5
- Circuit configuration (2 separate diodes, parallel pin-out)
- Package indicator (SOT-227 standard isolated base)
6
- Voltage rating (120 = 1200 V)
7
CIRCUIT DRAWING
Lead Assignment
F
4
43
3
1
2
1
2
Revision: 22-Mar-12
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5
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Document Number: 93636
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000
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