C&H Technology VS-HFA220FA120 User Manual

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Technical

Application

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SOT-227

PRODUCT SUMMARY

V

R

V

(typical) 2.68 V

F

t

(typical) 58 ns

rr

per module at T

I

F(AV)

C

VS-HFA220FA120

Vishay Semiconductors

HEXFRED®

Ultrafast Soft Recovery Diode, 220 A

FEATURES

• Fast recovery time characteristic

• Electrically isolated base plate

• Large creepage distance between terminal

• Simplified mechanical designs, rapid assembly

• Designed and qualified for industrial level

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

DESCRIPTION/APPLICATIONS

The dual diode series configuration (VS-HFA220FA120) is
used for output rectification or freewheeling/clamping

1200 V

220 A at 38 °C

operation and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Cathode to anode voltage V

Continuous forward current I

Single pulse forward current I

Maximum power dissipation per leg P

RMS isolation voltage V

Operating junction and storage
temperature range

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Forward voltage V

Reverse leakage current I

Note

(1)

Revision: 22-Mar-12

R

(1)

F

FSM

D

ISOL

T

, T

J

V

BR

FM

RM

Maximum continuous forward current must be limited at 100 A to do not exceed the maximum temperature of power terminals.

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IR = 100 μA 1200 - -

IF = 100 A - 2.68 3.60

I

= 200 A - 3.41 4.70

F

= 100 A, TJ = 150 °C - 2.62 2.89

I

F

I

= 200 A, TJ = 150 °C - 3.59 3.89

F

VR = VR rated - 10 75 μA

T

= 125 °C, VR = VR rated - 2 -

J

T

= 150 °C, VR = VR rated - 6 15

J

TC = 68 °C 110

TJ = 25 °C 700

TC = 25 °C 500

T

= 100 °C 400

C

Any terminal to case, t = 1 minute 2500 V

Stg

1

, [e-mail], [e-mail]

1200 V

- 55 to 150 °C

Document Number: 93636

A

W

V

mA

VS-HFA220FA120

0.0001

0.001

0.01

0.1

1

10

0 200 400 600 800 1000 1200

I

R

- Reverse Current (μA)

VR- Reverse Voltage (V)

TJ= 150 °C

TJ= 125 °C

TJ= 25 °C

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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

= 1 A

I

F

dI

/dt = - 200 A/μs

F

V

= 30 V

R

= 50 A

I

F

/dt = - 200 A/μs

dI

F

= 200 V

V

R

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

Junction capacitance C

rr

RRM

TJ = 25 °C

= 25 °C

T

J

T

= 125 °C - 255 -

J

TJ = 25 °C - 15 -

T

= 125 °C - 22.5 -

J

TJ = 25 °C - 1150 -

rr

T

= 125 °C - 2850 -

J

VR = 1200 V - 53 - pF

T

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Junction to case, single leg conducting

Case to heatsink R

Weight -30- g

Mounting torque -1.3-Nm

R

thJC

thCS

Flat, greased and surface - 0.10 -

Vishay Semiconductors

-58-

ns

-157-

A

nC

--0.25

°C/WJunction to case, both legs conducting - - 0.125

1000

TJ= 150 °C

TJ= 125 °C

= 25 °C

T

J

10

1

0.5 1 1.5 2 2.5 3 3.5 4

- Instantaneous Forward Current (A)
I

100

F

VF- Forward Voltage Drop (V)

Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage

Revision: 22-Mar-12

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2

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0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10

Z

thJC

- Thermal Impedance

Junction to Case (°C/W)

t1- Rectangular Pulse Duration (s)

0.75

0.50

0.33

0.25

0.20

P

DM

t

2

t

1

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

DC

0

100

200

300

400

500

600

700

800

0 40 80 120 160 200

Average Power Loss (W)

I

F(AV)

- Average Forward Current (A)

RMS Limit

DC

D = 0.05
D = 0.10
D = 0.20
D = 0.33
D = 0.50

0010010

50

100

150

200

250

300

VR = 200 V

IF = 50 A, TJ = 25 °C

IF = 50 A, TJ = 125 °C

dIF/dt (A/μs)

t

rr

(ns)

VS-HFA220FA120

Vishay Semiconductors

Fig. 3 - Maximum Thermal Impedance Z

175

150

125

100

DC

Allowable Case Temperature (°C)

75

50

Square wave (d = 0.5)

25

0

0 20 40 60 80 100 120 140 160 180

applied

Rated V

R

I

- Average Forward Current (A)

F(AV)

Fig. 4 - Maximum Allowable Case Temperature vs. Average

Characteristics (Per Leg)

thJC

Fig. 6 - Typical Reverse Recovery Time vs. dI

Forward Current (Per Leg)

4000

3500

3000

2500

2000

(ns)

rr

Q

1500

1000

Fig. 5 - Forward Power Losses Characteristics (Per Leg)

Revision: 22-Mar-12

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

3

500

0

100 1000

, [e-mail], [e-mail]

VR = 200 V

IF = 50 A, TJ = 125 °C

IF = 50 A, TJ = 25 °C

dIF/dt (A/μs)

Fig. 7 - Typical Stored Charge vs. dI

Document Number: 93636

/dt

F

/dt

F

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IRFP250

D.U.T.

L = 70 μH

V

R

= 200 V

0.01 Ω

G

D

S

dIF/dt

adjust

Q

rr

0.5 I

RRM

dI

(rec)M

/dt

0.75 I

RRM

I

RRM

t

rr

t

b

t

a

I

F

dIF/dt

0

(1)

(2)

(3)

(4)

(5)

(1) dI

F

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

rr

- reverse recovery time measured
from zero crossing point of negative
going I

F

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

rr

- area under curve dened by t

rr

and I

RRM

trr x I

RRM

2

Q

rr

=

(5) dI

(rec)M

/dt - peak rate of change of

current during t

b

portion of t

rr

VS-HFA220FA120

Vishay Semiconductors

50

40

30

(A)

RR

I

IF = 50 A, TJ = 125 °C

20

10

IF = 50 A, TJ = 25 °C

0

dIF/dt (A/μs)

Fig. 8 - Typical Peak Recovery Current vs. dIF/dt Fig. 9 - Typical Junction Capacitance vs. Reverse Voltage

Note

(1)

Formula used: TC = TJ - (Pd + Pd

Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V

REV

x VFM at (I

F(AV)

REV

VR = 200 V

) x R

thJC

1000100

;

/D) (see fig. 5);

F(AV)

1000

100

Junction Capacitance (pF)

-

T

C

10

10 100 1000 10 000

VR - Reverse Voltage (V)

R

Revision: 22-Mar-12

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 10 - Reverse Recovery Parameter Test Circuit

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 11 - Reverse Recovery Waveform and Definitions

4

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Document Number: 93636

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ORDERING INFORMATION TABLE

VS-HFA220FA120

Vishay Semiconductors

Device code

CIRCUIT CONFIGURATION

CIRCUIT

2 separate diodes,
parallel pin-out

CIRCUIT

CONFIGURATION CODE

HFVS- A 220 F A 120

51 32 4 6 7

1

- Vishay Semiconductors product

2

- HEXFRED® family

3

- Process designator (A = Electron irradiated)

4

- Average current (220 = 220 A)

5

- Circuit configuration (2 separate diodes, parallel pin-out)

- Package indicator (SOT-227 standard isolated base)

6

- Voltage rating (120 = 1200 V)

7

CIRCUIT DRAWING

Lead Assignment

F

4

43

3

1

2

1

2

Revision: 22-Mar-12

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

5

, [e-mail], [e-mail]

Document Number: 93636

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Vishay

Disclaimer

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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Revision: 12-Mar-12

1

Document Number: 91000