C&H Technology VS-HFA140FA120 User Manual

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SOT-227

Ultrafast Soft Recovery Diode, 140 A

PRODUCT SUMMARY

V

R

V

(typical) 2.8 V

F

(typical) 48 ns

t

rr

I

at TC, per module 140 A at 74 °C

F(DC)

I

at TC, per module 140 A at 46 °C

F(AV)

1200 V

HEXFRED®

FEATURES

• Fast recovery time characteristic

• Electrically isolated base plate

• Large creepage distance between terminal

• Simplified mechanical designs, rapid assembly

• Designed and qualified for industrial level

• UL approved file E78996

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

DESCRIPTION/APPLICATIONS

The dual diode series configuration VS-HFA140FA120 is
used for output rectification or freewheeling/clamping
operation and high voltage application. 
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built. 
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.

VS-HFA140FA120

Vishay Semiconductors

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Cathode to anode voltage V

Continuous forward current

Single pulse forward current I

Maximum power dissipation, per leg P

RMS isolation voltage V

Operating junction and storage 
temperature range

per leg

T

J

I

F

FSM

ISOL

, T

R

TC = 74 °C

TJ = 25 °C 350

D

TC = 25 °C 357

T

= 100 °C 143

C

Any terminal to case, t = 1 minute 2500 V

Stg

1200 V

70

Aper module 140

W

- 55 to + 150 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode 
breakdown voltage

Forward voltage, per leg V

Reverse leakage current, per leg I

V

BR

FM

RM

IR = 100 μA 1200 - -

IF = 60 A - 2.8 4.0

= 120 A - 3.6 5.3

I

F

I

= 60 A, TJ = 125 °C - 2.7 -

F

I

= 60 A, TJ = 150 °C - 2.65 -

F

VR = VR rated - 2.0 75 μA

T

= 125 °C, VR = VR rated - 1.6 5

J

T

= 150 °C, VR = VR rated - 5 10

J

mA

V

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VS-HFA140FA120

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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1 A; dIF/dt = 200 A/μs; VR = 30 V - 48 -

Reverse recovery time, per leg t

Peak recovery current, per leg I

Reverse recovery charge, per leg Q

Junction capacitance, per leg C

rr

RRM

rr

T

= 25 °C

J

T

= 125 °C - 218 -

J

TJ = 25 °C - 13 -

T

= 125 °C - 18 -

J

TJ = 25 °C - 910 -

T

= 125 °C - 1920 -

J

I

= 50 A

F

dI

/dt = - 200 A/μs

F

= 200 V

V

R

VR = 1200 V - 27 - pF

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Junction to case, single leg conducting

Case to heatsink, per leg R

Weight -30- g

Mounting torque, on terminals and heatsink T - - 1.3 Nm

R

thJC

thCS

Flat, greased and surface - 0.05 -

Vishay Semiconductors

- 145 -

--0.35

nsT

A

nC

°C/WJunction to case, both legs conducting - - 0.175

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10

10

100

100

1000

1000

10 000

C

T

- Junction Capacitance (pF)

VR - Reverse Voltage (V)

VS-HFA140FA120

Vishay Semiconductors

1000

100

10

1

- Instantaneous Forward Current (A)

F

I

0.5 1.5 2.5 3.5 5.01.0 2.0 3.0 4.0 4.5

TJ = 150 °C

= 125 °C

T

J

T

= 25 °C

J

VFM - Forward Voltage Drop (V)

10 000

1000

- Reverse Current (µA)

R

I

TJ = 150 °C

100

10

1

0.1

0.01

2000 400 600 800 1000 1200

VR - Reverse Voltage (V)

TJ = 125 °C

TJ = 25 °C

Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

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Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

1

0.1

- Thermal Impedance (°C/W)

thJC

Z

0.01

0.0001 0.001

DC

0.01

D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

0.1 1

P

DM

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance Z

Characteristics (Per Leg)

thJC

3

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t

1

t

2

1/t2

+ T

thJC

C

10

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Allowable Case Temperature (°C)

I

F(AV)

- Average Forward Current (A)

604020 80

100 120

0

0

50

75

25

100

150

175

125

Square wave (D = 0.50)
80 % rated V

R

applied

DC

t

rr

(ns)

dIF/dt (A/µs)

100 1000

50

300

250

100

150

200

IF = 50 A
V

R

= 200 V

TJ = 25 °C

TJ = 125 °C

Q

rr

(nC)

dIF/dt (A/µs)

100 1000

0

3000

2500

1000

1500

2000

500

IF = 50 A
V

R

= 200 V

TJ = 25 °C

TJ = 125 °C

VS-HFA140FA120

Vishay Semiconductors

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

500

400

300

200

100

Average Power Loss (W)

0

0

I

- Average Forward Current (A)

F(AV)

DC

D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75

80604020

100 120 140

RMS limit

Fig. 6 - Forward Power Loss Characteristics

40

30

IF = 50 A

= 200 V

V

R

TJ = 125 °C

Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt

Fig. 8 - Typical Stored Charge vs. dI

/dt

F

Note

(1)

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

Revision: 20-Jul-12

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V

REV

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REV

x VFM at (I

F(AV)

20

(A)

rr

I

10

0

100 1000

TJ = 25 °C

dIF/dt (A/µs)

Fig. 9 - Typical Peak Recovery Current vs. dI

) x R

;

thJC

/D) (see fig. 5); 

F(AV)

R

4

/dt

F

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Q

rr

0.5 I

RRM

dI

(rec)M

/dt

0.75 I

RRM

I

RRM

t

rr

t

b

t

a

I

F

dIF/dt

0

(1)

(2)

(3)

(4)

(5)

(1) dI

F

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

rr

- reverse recovery time measured
from zero crossing point of negative
going I

F

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

rr

- area under curve dened by t

rr

and I

RRM

trr x I

RRM

2

Q

rr

=

(5) dI

(rec)M

/dt - peak rate of change of

current during t

b

portion of t

rr

L = 70 μH

= 200 V

V

R

VS-HFA140FA120

Vishay Semiconductors

0.01 Ω

D.U.T.

dIF/dt

adjust

G

D

IRFP250

S

Fig. 10 - Reverse Recovery Parameter Test Circuit

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Fig. 11 - Reverse Recovery Waveform and Definitions

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ORDERING INFORMATION TABLE

VS-HFA140FA120

Vishay Semiconductors

Device code

CIRCUIT CONFIGURATION

CIRCUIT

2 separate diodes,
parallel pin-out

CONFIGURATION CODE

CIRCUIT

HFVS- A 140 F A 120

1

1

- Vishay Semiconductors product

2

- HEXFRED® family

3

- Process designator (A = Electron irradiated)

4

- Average current (140 = 140 A)

5

- Circuit configuration (2 separate diodes, parallel pin-out)

- Package indicator (SOT-227 standard isolated base)

6

- Voltage rating (120 = 1200 V)

7

F

32 4 6 7

4

5

CIRCUIT DRAWING

3

Lead Assignment

43

1

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95423

Part marking information www.vishay.com/doc?95425

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Legal Disclaimer Notice

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Vishay

Disclaimer

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12

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