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SOT-227
Ultrafast Soft Recovery Diode, 140 A
PRODUCT SUMMARY
V
R
V
(typical) 2.8 V
F
(typical)48 ns
t
rr
I
at TC, per module140 A at 74 °C
F(DC)
I
at TC, per module140 A at 46 °C
F(AV)
1200 V
HEXFRED®
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• Designed and qualified for industrial level
• UL approved file E78996
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION/APPLICATIONS
The dual diode series configuration VS-HFA140FA120 is
used for output rectification or freewheeling/clamping
operation and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.
VS-HFA140FA120
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETERSYMBOLTEST CONDITIONSMAX.UNITS
Cathode to anode voltageV
Continuous forward current
Single pulse forward currentI
Maximum power dissipation, per legP
RMS isolation voltageV
Operating junction and storage
temperature range
per leg
T
J
I
F
FSM
ISOL
, T
R
TC = 74 °C
TJ = 25 °C350
D
TC = 25 °C357
T
= 100 °C143
C
Any terminal to case, t = 1 minute2500V
Stg
1200V
70
Aper module140
W
- 55 to + 150°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
Forward voltage, per legV
Reverse leakage current, per legI
V
BR
FM
RM
IR = 100 μA1200--
IF = 60 A-2.84.0
= 120 A-3.65.3
I
F
I
= 60 A, TJ = 125 °C-2.7-
F
I
= 60 A, TJ = 150 °C-2.65-
F
VR = VR rated-2.075μA
T
= 125 °C, VR = VR rated-1.65
J
T
= 150 °C, VR = VR rated-510
J
mA
V
Revision: 20-Jul-12
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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VS-HFA140FA120
www.vishay.com
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETERSYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1 A; dIF/dt = 200 A/μs; VR = 30 V-48-
Reverse recovery time, per legt
Peak recovery current, per legI
Reverse recovery charge, per legQ
Junction capacitance, per legC
rr
RRM
rr
T
= 25 °C
J
T
= 125 °C-218-
J
TJ = 25 °C-13-
T
= 125 °C-18-
J
TJ = 25 °C-910-
T
= 125 °C-1920-
J
I
= 50 A
F
dI
/dt = - 200 A/μs
F
= 200 V
V
R
VR = 1200 V-27-pF
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETERSYMBOLTEST CONDITIONSMIN. TYP. MAX. UNITS
Junction to case, single leg conducting
Case to heatsink, per legR
Weight-30- g
Mounting torque, on terminals and heatsinkT--1.3Nm
R
thJC
thCS
Flat, greased and surface-0.05-
Vishay Semiconductors
-145-
--0.35
nsT
A
nC
°C/WJunction to case, both legs conducting--0.175
Revision: 20-Jul-12
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Document Number: 94746
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
10
10
100
100
1000
1000
10 000
C
T
- Junction Capacitance (pF)
VR - Reverse Voltage (V)
VS-HFA140FA120
Vishay Semiconductors
1000
100
10
1
- Instantaneous Forward Current (A)
F
I
0.51.52.53.55.01.02.03.04.0 4.5
TJ = 150 °C
= 125 °C
T
J
T
= 25 °C
J
VFM - Forward Voltage Drop (V)
10 000
1000
- Reverse Current (µA)
R
I
TJ = 150 °C
100
10
1
0.1
0.01
200040060080010001200
VR - Reverse Voltage (V)
TJ = 125 °C
TJ = 25 °C
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 20-Jul-12
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: DiodesAmericas@vishay.com
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.1
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.0001 0.001
DC
0.01
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
0.11
P
DM
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics (Per Leg)
thJC
3
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
t
1
t
2
1/t2
+ T
thJC
C
10
Document Number: 94746
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Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
60402080
100120
0
0
50
75
25
100
150
175
125
Square wave (D = 0.50)
80 % rated V
R
applied
DC
t
rr
(ns)
dIF/dt (A/µs)
1001000
50
300
250
100
150
200
IF = 50 A
V
R
= 200 V
TJ = 25 °C
TJ = 125 °C
Q
rr
(nC)
dIF/dt (A/µs)
1001000
0
3000
2500
1000
1500
2000
500
IF = 50 A
V
R
= 200 V
TJ = 25 °C
TJ = 125 °C
VS-HFA140FA120
Vishay Semiconductors
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
500
400
300
200
100
Average Power Loss (W)
0
0
I
- Average Forward Current (A)
F(AV)
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
80604020
100120 140
RMS limit
Fig. 6 - Forward Power Loss Characteristics
40
30
IF = 50 A
= 200 V
V
R
TJ = 125 °C
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 8 - Typical Stored Charge vs. dI
/dt
F
Note
(1)
Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd
Revision: 20-Jul-12
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V
REV
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
REV
x VFM at (I
F(AV)
20
(A)
rr
I
10
0
1001000
TJ = 25 °C
dIF/dt (A/µs)
Fig. 9 - Typical Peak Recovery Current vs. dI
) x R
;
thJC
/D) (see fig. 5);
F(AV)
R
4
/dt
F
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www.vishay.com
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dIF/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
trr x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
L = 70 μH
= 200 V
V
R
VS-HFA140FA120
Vishay Semiconductors
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 10 - Reverse Recovery Parameter Test Circuit
Revision: 20-Jul-12
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 11 - Reverse Recovery Waveform and Definitions
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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ORDERING INFORMATION TABLE
VS-HFA140FA120
Vishay Semiconductors
Device code
CIRCUIT CONFIGURATION
CIRCUIT
2 separate diodes,
parallel pin-out
CONFIGURATION CODE
CIRCUIT
HFVS-A140FA120
1
1
-Vishay Semiconductors product
2
-HEXFRED® family
3
-Process designator (A = Electron irradiated)
4
-Average current (140 = 140 A)
5
-Circuit configuration (2 separate diodes, parallel pin-out)
-Package indicator (SOT-227 standard isolated base)
6
-Voltage rating (120 = 1200 V)
7
F
32467
4
5
CIRCUIT DRAWING
3
Lead Assignment
43
1
LINKS TO RELATED DOCUMENTS
Dimensionswww.vishay.com/doc?95423
Part marking informationwww.vishay.com/doc?95425
Revision: 20-Jul-12
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6
2
1
Document Number: 94746
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2
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000
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