• Trench IGBT technology with positive
temperature coefficient
• Square RBSOA
• 10 μs short circuit capability
• HEXFRED antiparallel diodes with soft reverse recovery
•T
maximum = 175 °C
J
• Fully isolated package
• Industry standard outline
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
1200 V
• Speed 4 kHz to 30 kHz
• Very low V
CE(on)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
REMARKS
• Product reliability results valid for TJ = 150 °C
• Recommended operation temperature T
VS-GT450TX120U
Vishay Semiconductors
= 150 °C
op
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS
IGBT
Collector to emitter voltageV
Continuous collector current, V
Pulsed collector currentI
Clamped inductive load currentI
Power dissipationP
Gate to source voltageV
HEXFRED
Peak repetitive reverse voltageV
Continuous forward currentI
Peak repetitive forward currentI
Power dissipationP
MODULE
Operating junction temperature rangeT
Storage temperature rangeT
RMS isolation voltageV
Note
(1)
Maximum I
Revision: 23-Jul-13
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
current admitted 600 A to do not exceed the maximum temperature of terminals.
RMS
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
at 15 VI
GE
CES
C
CM
LM
GE
RRM
F
FSM
Stg
ISOL
TC = 25 °C
T
= 80 °C473
C
D
D
J
TC = 25 °C2500
= 80 °C1583
T
C
TC = 25 °C 412
= 80 °C308
C
TC = 25 °C1250
= 80 °C792
T
C
Any terminal to case, t = 1 s3500V
1
(1)
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1200V
628
n/a
n/a
± 30V
1200V
n/a
- 55 to + 175
- 40 to + 175
Document Number: 93615
A
W
AT
W
°C
Page 3
Preliminary
VS-GT450TX120U
www.vishay.com
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOLTEST CONDITIONSMIN. TYP. MAX. UNITS
Collector to emitter breakdown voltageV
Breakdown voltage
temperature coefficient
V
BR(CES)
(BR)CES
Collector to emitter voltageV
Gate threshold voltageV
Forward transconductanceg
Collector to emitter leakage currentI
Gate to emitter leakage currentI
Total gate charge (turn-on)Q
Gate to collector charge (turn-on)Q
Turn-on switching lossE
Turn-off switching lossE
Turn-on switching lossE
Turn-off switching lossE
Turn-on delay timet
Rise timet
Turn-off delay timet
Fall timet
Input capacitanceC
Reverse transfer capacitanceC
Forward voltageV
Reverse recovery timet
Reverse recovery chargeQ
Junction capacitanceC
CE(on)
GE(th)
fe
CES
GES
g
ge
gc
on
off
on
off
d(on)
r
d(off)
f
iss
oss
rss
F
rr
rr
T
VGE = 0 V, IC = 500 μA1200--V
/TJReference to 25 °C, IC = 1 mA-n/a-V/°C
VGE = 15 V, IC = 450 A-2.49-
= 15 V, IC = 450 A, TJ = 125 °C-2.84-
V
GE
VCE = VGE, IC = 1.0 mA-4.9-V
VCE = 20 V, IC = 450 A-525-S
VGE = 0 V, VCE= 1200 V-0.07-
= 0 V, VCE= 1200 V, TJ = 125 °C-4-
V
GE
VGE = ± 30 V--± 400nA
IC = 450 A
V
= 600 V
CE
V
= 15 V
GE
IC = 450 A, VCC = 600 V, VGE = 15 V,
R
= 3.3 , L = 500 μH, TJ = 25 °C
g
VCC = 600 V, TJ = 125 °C
I
= 450 A
C
R
= 3.3 , L = 500 μH
g
= 15 V
V
GS
VGE = 0 V
V
= 30 V
CE
f = 1.0 MHz
IF = 450 A-2.68-
= 450 A, TJ = 125 °C-3.0-
I
F
IF = 450 A, L = 500 μH, Rg = 3.3 ,
V
= 600 V
R
= 450 A, L = 500 μH, Rg = 3.3 ,
I
F
= 600 V, TJ = 125 °C
V
R
IF = 450 A, L = 500 μH, Rg = 3.3 ,
V
= 600 V
R
= 450 A, L = 500 μH, Rg = 3.3 ,
I
F
V
= 600 V, TJ = 125 °C
R
VR = 1200 V-n/a-pF
Vishay Semiconductors
V
mA
-2490-
-540-
-1140-
-51.8-
-33.0-
-62.4-
-50-
-830-
-249-
-862-
-134-
-53.7-
-2-
-1.5-
-370-
-511-
-15.8-
-39.8-
nCGate to emitter charge (turn-on)Q
mJ
ns
nFOutput capacitanceC
V
ns
μC
INTERNAL NTC - THERMISTOR SPECIFICATIONS
PARAMETERSYMBOLTEST CONDITIONSTYP.UNITS
ResistanceR
ResistanceR
25
125
B-constantBR
Temperature range- 40 to 125
Maximum operating temperature220
Dissipation constant2mW/°C
Thermal time constant8s
Revision: 23-Jul-13
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TJ = 25 °C5000 ± 5 %
TJ = 125 °C493 ± 5 %
[B(1/T2 - 1/T1)]
= R1e
2
2
3.375 ± 5 %K
Document Number: 93615
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
°C
Page 4
Preliminary
VCE (V)
I
C
(A)
700
800
900
300
400
500
600
0
100
200
300
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
VGE = 9 V
VGE = 12 V
VGE = 15 V
VGE = 18 V
IC - Continuous Collector Current (A)
Allowable Case Temperature (°C)
120
140
160
180
40
60
80
100
120
DC
0
20
40
0 100 200 300 400 500 600 700
V
CE
(V)
TJ (°C)
2.2
2.4
2.6
2.8
3
3.2
1.2
1.4
1.6
1.8
2
2.2
2
.
20 40 60 80 100 120 140 160 180
450 A
300 A
150 A
VS-GT450TX120U
www.vishay.com
MECHANICAL SPECIFICATIONS
PARAMETERSYMBOLTEST CONDITIONSVALUESUNITS
X-MAP to heatsink
Mounting torque
Busbar to X-MAP
A mounting compound is recommended and the
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound.
Lubricated threads.
Typical weight320g
THERMAL RESISTANCE
PARAMETERSYMBOLTYP.MAX.UNITS
Junction to case
IGBT
Case to sink per moduleR
900
800
700
700
600
500
(A)
C
I
400
400
300
200
100
100
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
TJ = 25 °C
TJ = 125 °C
TJ = 150 °C
= 175 °C
T
J
VCE (V)
R
thJC
thCS
-0.06
0.015-
Vishay Semiconductors
4 to 6Nm
°C/WHEXFRED-0.12
Fig. 1 - Typical Output Characteristics at VGE = 15 V
Revision: 23-Jul-13
Fig. 2 - Typical Output Characteristics at T
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 3 - Maximum DC IGBT Collector Current
vs. Case Temperature
= 125 °C
J
Fig. 4 - Typical IGBT Collector to Emitter Voltage
vs. JunctionTemperature, V
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000