C&H Technology VS-GT450TX120U User Manual

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Suite 108
Minnetonka, MN 55345

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C & H TECHNOLOGY, INC. ● 6121 BAKER RD. SUITE 108 ● MINNETONKA, MINNESOTA 55345 ●

800-274-4284 ● 952-933-6190 ● FAX: [phone] ● WWW.CHTECHNOLOGY.COM

www.vishay.com

X-MAP

Half-Bridge - Trench IGBT, 450 A

PRODUCT SUMMARY

IGBT

V

CES

V

(typical) at 450 A, 25 °C 2.49 V

CE(on)

I

at 87 °C 450 A

D(DC)

HEXFRED

trr (typical) 370 ns

I

at 25 °C 412 A

F(DC)

Type Modules - IGBT

Package X-MAP

®

Preliminary

X-MAP Power Module

FEATURES AND BENEFITS

• Trench IGBT technology with positive
temperature coefficient

• Square RBSOA

• 10 μs short circuit capability

• HEXFRED antiparallel diodes with soft reverse recovery

•T

maximum = 175 °C

J

• Fully isolated package

• Industry standard outline

• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating

• Easy to assemble and parallel

• Direct mounting to heatsink

1200 V

• Speed 4 kHz to 30 kHz

• Very low V

CE(on)

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

REMARKS

• Product reliability results valid for TJ = 150 °C

• Recommended operation temperature T

VS-GT450TX120U

Vishay Semiconductors

= 150 °C

op

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

IGBT

Collector to emitter voltage V

Continuous collector current, V

Pulsed collector current I

Clamped inductive load current I

Power dissipation P

Gate to source voltage V

HEXFRED

Peak repetitive reverse voltage V

Continuous forward current I

Peak repetitive forward current I

Power dissipation P

MODULE

Operating junction temperature range T

Storage temperature range T

RMS isolation voltage V

Note

(1)

Maximum I

Revision: 23-Jul-13

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current admitted 600 A to do not exceed the maximum temperature of terminals.

RMS

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

at 15 V I

GE

CES

C

CM

LM

GE

RRM

F

FSM

Stg

ISOL

TC = 25 °C

T

= 80 °C 473

C

D

D

J

TC = 25 °C 2500

= 80 °C 1583

T

C

TC = 25 °C 412

= 80 °C 308

C

TC = 25 °C 1250

= 80 °C 792

T

C

Any terminal to case, t = 1 s 3500 V

1

(1)

, [e-mail], [e-mail]

1200 V

628

n/a

n/a

± 30 V

1200 V

n/a

- 55 to + 175

- 40 to + 175

Document Number: 93615

A

W

AT

W

°C

Preliminary

VS-GT450TX120U

www.vishay.com

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Breakdown voltage
temperature coefficient

V

BR(CES)

(BR)CES

Collector to emitter voltage V

Gate threshold voltage V

Forward transconductance g

Collector to emitter leakage current I

Gate to emitter leakage current I

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Turn-off switching loss E

Turn-on switching loss E

Turn-off switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Input capacitance C

Reverse transfer capacitance C

Forward voltage V

Reverse recovery time t

Reverse recovery charge Q

Junction capacitance C

CE(on)

GE(th)

fe

CES

GES

g

ge

gc

on

off

on

off

d(on)

r

d(off)

f

iss

oss

rss

F

rr

rr

T

VGE = 0 V, IC = 500 μA 1200 - - V

/TJReference to 25 °C, IC = 1 mA - n/a - V/°C

VGE = 15 V, IC = 450 A - 2.49 -

= 15 V, IC = 450 A, TJ = 125 °C - 2.84 -

V

GE

VCE = VGE, IC = 1.0 mA - 4.9 - V

VCE = 20 V, IC = 450 A - 525 - S

VGE = 0 V, VCE= 1200 V - 0.07 -

= 0 V, VCE= 1200 V, TJ = 125 °C - 4 -

V

GE

VGE = ± 30 V - - ± 400 nA

IC = 450 A
V

= 600 V

CE

V

= 15 V

GE

IC = 450 A, VCC = 600 V, VGE = 15 V, 
R

= 3.3 , L = 500 μH, TJ = 25 °C

g

VCC = 600 V, TJ = 125 °C
I

= 450 A

C

R

= 3.3 , L = 500 μH

g

= 15 V

V

GS

VGE = 0 V
V

= 30 V

CE

f = 1.0 MHz

IF = 450 A - 2.68 -

= 450 A, TJ = 125 °C - 3.0 -

I

F

IF = 450 A, L = 500 μH, Rg = 3.3 , 
V

= 600 V

R

= 450 A, L = 500 μH, Rg = 3.3 , 

I

F

= 600 V, TJ = 125 °C

V

R

IF = 450 A, L = 500 μH, Rg = 3.3 , 
V

= 600 V

R

= 450 A, L = 500 μH, Rg = 3.3 ,

I

F

V

= 600 V, TJ = 125 °C

R

VR = 1200 V - n/a - pF

Vishay Semiconductors

V

mA

-2490-

-540-

-1140-

- 51.8 -

- 33.0 -

- 62.4 -

-50-

-830-

-249-

-862-

-134-

- 53.7 -

-2-

-1.5-

-370-

-511-

- 15.8 -

- 39.8 -

nCGate to emitter charge (turn-on) Q

mJ

ns

nFOutput capacitance C

V

ns

μC

INTERNAL NTC - THERMISTOR SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS TYP. UNITS

Resistance R

Resistance R

25

125

B-constant B R

Temperature range - 40 to 125

Maximum operating temperature 220

Dissipation constant 2mW/°C

Thermal time constant 8s

Revision: 23-Jul-13

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TJ = 25 °C 5000 ± 5 %

TJ = 125 °C 493 ± 5 %

[B(1/T2 - 1/T1)]

= R1e

2

2

3.375 ± 5 % K

Document Number: 93615

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

°C

Preliminary

VCE (V)

I

C

(A)

700

800

900

300

400

500

600

0

100

200

300

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5

VGE = 9 V

VGE = 12 V

VGE = 15 V

VGE = 18 V

IC - Continuous Collector Current (A)

Allowable Case Temperature (°C)

120

140

160

180

40

60

80

100

120

DC

0

20

40

0 100 200 300 400 500 600 700

V

CE

(V)

TJ (°C)

2.2

2.4

2.6

2.8

3

3.2

1.2

1.4

1.6

1.8

2

2.2

2

.

20 40 60 80 100 120 140 160 180

450 A

300 A

150 A

VS-GT450TX120U

www.vishay.com

MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

X-MAP to heatsink

Mounting torque

Busbar to X-MAP

A mounting compound is recommended and the
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound.
Lubricated threads.

Typical weight 320 g

THERMAL RESISTANCE

PARAMETER SYMBOL TYP. MAX. UNITS

Junction to case

IGBT

Case to sink per module R

900

800

700

700

600

500

(A)

C

I

400

400

300

200

100

100

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5

TJ = 25 °C

TJ = 125 °C
TJ = 150 °C

= 175 °C

T

J

VCE (V)

R

thJC

thCS

-0.06

0.015 -

Vishay Semiconductors

4 to 6 Nm

°C/WHEXFRED - 0.12

Fig. 1 - Typical Output Characteristics at VGE = 15 V

Revision: 23-Jul-13

Fig. 2 - Typical Output Characteristics at T

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Fig. 3 - Maximum DC IGBT Collector Current

vs. Case Temperature

= 125 °C

J

Fig. 4 - Typical IGBT Collector to Emitter Voltage

vs. JunctionTemperature, V

3

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= 15 V

GE

Document Number: 93615

(A)

V

GEth

(V)

IC (mA)

5

5.5

6

2.5

3

3.5

4

4.5

2

2.5

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5

TJ = 125 °C

TJ = 25 °C

V

CES

(V)

I

CES

(mA)

10

100

0.001

0.01

0.1

1

100 200 300 400 500 600 700 800 900 1000 1100 1200 1300

TJ = 175 °C

TJ = 125 °C

T

J

= 150 °C

TJ = 25 °C

VFM (V)

I

F

(A)

700

800

900

200

300

400

500

600

700

0

100

20

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5

TJ = 175 °C

TJ = 125 °C
T

J

= 150 °C

TJ = 25 °C

IF - Continuous Forward Current (A)

Allowable Case Temperature (°C)

160

180

80

100

120

140

160

0

20

40

60

80

0 40 80 120 160 200 240280 320360 400 440 480

C

I

www.vishay.com

900

VCE = 20 V

800

700

600

500

400

300

300

200

100

0

4 5 6 7 8 9 10 11 12

TJ = 125 °C

TJ = 25 °C

VGE (V)

Preliminary

VS-GT450TX120U

Vishay Semiconductors

Fig. 5 - Typical IGBT Transfer Characteristics

Fig. 6 - Typical IGBT Gate Threshold Voltage

Fig. 8 - Typical Diode Forward Characteristics

Fig. 9 - Maximum DC Forward Current vs. Case Temperature

70

60

50

E

off

Revision: 23-Jul-13

Fig. 7 - Typical IGBT Zero Gate Voltage Collector Current

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40

30

Energy (mJ)

20

10

4

0

0 50 100 150 200 250 300 350 400 450 500

IC (A)

Fig. 10 - Typical IGBT Energy loss vs. I

T

= 125 °C, VCC = 600 V, Rg = 3.3 , VGE = 15 V, L = 500 μH

J

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

E

on

,

C

Document Number: 93615

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Switching Time (ns)

IC (A)

1000

100

10

0 50 100 150 200 250 300 350 400 450 500

t

d(off)

t

d(on)

t

f

t

r

t1 - Rectangular Pulse Duration (s)

Z

thJC

-

Thermal Impedance

Junction to Case (°C/W)

1

0.1

0.001

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10

0.001

D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
DC

0.01

0.1

1

0.0001

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10

D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
DC

t1 - Rectangular Pulse Duration (s)

Z

thJC

-

Thermal Impedance

Junction to Case (°C/W)

Preliminary

Fig. 11 - Typical IGBT Switching Time vs. IC,

T

= 125 °C, VCC = 600 V, Rg = 3.3 , VGE = 15 V, L = 500 μH

J

VS-GT450TX120U

Vishay Semiconductors

Fig. 12 - Maximum Thermal Impedance Z

Revision: 23-Jul-13

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Fig. 13 - Maximum Thermal Impedance Z

5

Characteristics (IGBT)

thJC

Characteristics (DIODE)

thJC

Document Number: 93615

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1

- Insulated Gate Bipolar Transistor (IGBT)

- Vishay Semiconductors product

2

- T = Trench IGBT technology

3

- Current rating (450 = 450 A)

4

- T = Half-bridge

5

- Package indicator (X-MAP)

6

- Voltage rating (120 = 1200 V)

7

- U = Ultrafast

8

Device code

5

1

32 4 6 7 8

GVS- T 450 T X 120 U

NTC

1

7

8

65

10

11

Q1

Q2

D1

D2

2

4

3

9

ORDERING INFORMATION TABLE

Preliminary

VS-GT450TX120U

Vishay Semiconductors

CIRCUIT CONFIGURATION

CIRCUIT

Half-bridge with thermistor T

CIRCUIT

CONFIGURATION CODE

CIRCUIT DRAWING

Revision: 23-Jul-13

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6

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Document Number: 93615

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DIMENSIONS in millimeters

Preliminary

VS-GT450TX120U

Vishay Semiconductors

0.46

57.96

0

0.3

0.5

10.5 ± 0.5

7.75 ± 0.1

12.7

2

12 ± 0.2

3

A

C

C

0.3 power leads 1-2-3-4

0.2 each power leads

X

7.3 ± 0.2

0

7.25

30.11

A

A

33.92

68.1

90.5

94.5 ± 0.3

99 ± 0.3

110 ± 0.2

0

122

- 0.3

137 ± 0.4

0

152

- 0.5

56.78

1110

60.59

Ø 4.5

Ø 2.5

Ø 1.8

6789

16.5

83.45

5

87.26

+ 0.1

Ø 5.5

- 0.3

1

4

12 ± 0.5

1.5 ± 0.2

22 ± 0.2

M6 x 4

17 ± 0.5

39 ± 0.3

50 ± 0.2

B

3.95 ± 0.5

20.95

- 0.5

+ 0.2

62

57.5 ± 0.3

A

0.3

0.87 ± 0.03

1.15 ± 0.03

1

Scale 2:1

0.8 ± 0.03

B

Pin position tolerance

Revision: 23-Jul-13

For technical questions within your region: [e-mail]

Ø 0.5

7

Document Number: 93615

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000