C&H Technology VS-GT450TX120U User Manual
6121 Baker Road,
Suite 108
Minnetonka, MN 55345
Phone (952) 933-6190
Fax (952) 933-6223
(800) 274-4284
Thank you for downloading this document from C&H Technology, Inc.
Please contact the C&H Technology team for the following questions -
Technical
Application
Assembly
Availability
Pricing
Phone – 1-800-274-4284
E-Mail – sales@chtechnology.com
C & H TECHNOLOGY, INC. ● 6121 BAKER RD. SUITE 108 ● MINNETONKA, MINNESOTA 55345 ●
800-274-4284 ● 952-933-6190 ● FAX: 952-933-6223 ● WWW.CHTECHNOLOGY.COM
www.vishay.com
X-MAP
Half-Bridge - Trench IGBT, 450 A
PRODUCT SUMMARY
IGBT
V
CES
V
(typical) at 450 A, 25 °C 2.49 V
CE(on)
I
at 87 °C 450 A
D(DC)
HEXFRED
trr (typical) 370 ns
I
at 25 °C 412 A
F(DC)
Type Modules - IGBT
Package X-MAP
®
Preliminary
X-MAP Power Module
FEATURES AND BENEFITS
• Trench IGBT technology with positive
temperature coefficient
• Square RBSOA
• 10 μs short circuit capability
• HEXFRED antiparallel diodes with soft reverse recovery
•T
maximum = 175 °C
J
• Fully isolated package
• Industry standard outline
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
1200 V
• Speed 4 kHz to 30 kHz
• Very low V
CE(on)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
REMARKS
• Product reliability results valid for TJ = 150 °C
• Recommended operation temperature T
VS-GT450TX120U
Vishay Semiconductors
= 150 °C
op
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
IGBT
Collector to emitter voltage V
Continuous collector current, V
Pulsed collector current I
Clamped inductive load current I
Power dissipation P
Gate to source voltage V
HEXFRED
Peak repetitive reverse voltage V
Continuous forward current I
Peak repetitive forward current I
Power dissipation P
MODULE
Operating junction temperature range T
Storage temperature range T
RMS isolation voltage V
Note
(1)
Maximum I
Revision: 23-Jul-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
current admitted 600 A to do not exceed the maximum temperature of terminals.
RMS
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
at 15 V I
GE
CES
C
CM
LM
GE
RRM
F
FSM
Stg
ISOL
TC = 25 °C
T
= 80 °C 473
C
D
D
J
TC = 25 °C 2500
= 80 °C 1583
T
C
TC = 25 °C 412
= 80 °C 308
C
TC = 25 °C 1250
= 80 °C 792
T
C
Any terminal to case, t = 1 s 3500 V
1
(1)
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1200 V
628
n/a
n/a
± 30 V
1200 V
n/a
- 55 to + 175
- 40 to + 175
Document Number: 93615
A
W
AT
W
°C
Preliminary
VS-GT450TX120U
www.vishay.com
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
Breakdown voltage
temperature coefficient
V
BR(CES)
(BR)CES
Collector to emitter voltage V
Gate threshold voltage V
Forward transconductance g
Collector to emitter leakage current I
Gate to emitter leakage current I
Total gate charge (turn-on) Q
Gate to collector charge (turn-on) Q
Turn-on switching loss E
Turn-off switching loss E
Turn-on switching loss E
Turn-off switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Input capacitance C
Reverse transfer capacitance C
Forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Junction capacitance C
CE(on)
GE(th)
fe
CES
GES
g
ge
gc
on
off
on
off
d(on)
r
d(off)
f
iss
oss
rss
F
rr
rr
T
VGE = 0 V, IC = 500 μA 1200 - - V
/TJReference to 25 °C, IC = 1 mA - n/a - V/°C
VGE = 15 V, IC = 450 A - 2.49 -
= 15 V, IC = 450 A, TJ = 125 °C - 2.84 -
V
GE
VCE = VGE, IC = 1.0 mA - 4.9 - V
VCE = 20 V, IC = 450 A - 525 - S
VGE = 0 V, VCE= 1200 V - 0.07 -
= 0 V, VCE= 1200 V, TJ = 125 °C - 4 -
V
GE
VGE = ± 30 V - - ± 400 nA
IC = 450 A
V
= 600 V
CE
V
= 15 V
GE
IC = 450 A, VCC = 600 V, VGE = 15 V,
R
= 3.3 , L = 500 μH, TJ = 25 °C
g
VCC = 600 V, TJ = 125 °C
I
= 450 A
C
R
= 3.3 , L = 500 μH
g
= 15 V
V
GS
VGE = 0 V
V
= 30 V
CE
f = 1.0 MHz
IF = 450 A - 2.68 -
= 450 A, TJ = 125 °C - 3.0 -
I
F
IF = 450 A, L = 500 μH, Rg = 3.3 ,
V
= 600 V
R
= 450 A, L = 500 μH, Rg = 3.3 ,
I
F
= 600 V, TJ = 125 °C
V
R
IF = 450 A, L = 500 μH, Rg = 3.3 ,
V
= 600 V
R
= 450 A, L = 500 μH, Rg = 3.3 ,
I
F
V
= 600 V, TJ = 125 °C
R
VR = 1200 V - n/a - pF
Vishay Semiconductors
V
mA
-2490-
-540-
-1140-
- 51.8 -
- 33.0 -
- 62.4 -
-50-
-830-
-249-
-862-
-134-
- 53.7 -
-2-
-1.5-
-370-
-511-
- 15.8 -
- 39.8 -
nCGate to emitter charge (turn-on) Q
mJ
ns
nFOutput capacitance C
V
ns
μC
INTERNAL NTC - THERMISTOR SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. UNITS
Resistance R
Resistance R
25
125
B-constant B R
Temperature range - 40 to 125
Maximum operating temperature 220
Dissipation constant 2mW/°C
Thermal time constant 8s
Revision: 23-Jul-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TJ = 25 °C 5000 ± 5 %
TJ = 125 °C 493 ± 5 %
[B(1/T2 - 1/T1)]
= R1e
2
2
3.375 ± 5 % K
Document Number: 93615
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
°C
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