C&H Technology VS-GT400TH60N User Manual

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Suite 108
Minnetonka, MN 55345

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Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

www.vishay.com

Double INT-A-PAK

2-in-1 Package, 600 V and 400 A

Molding Type Module IGBT,

FEATURES

•Low V

• Low switching losses

• 5 μs short circuit capability

•V

CE(on)

• Maximum junction temperature 175 °C

• Low inductance case

• Fast and soft reverse recovery antiparallel FWD

• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology

• Speed: 0 kHz to 20 kHz

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

trench IGBT technology

CE(on)

with positive temperature coefficient

VS-GT400TH60N

Vishay Semiconductors

PRODUCT SUMMARY

V

CES

at TC = 80 °C 400 A

I

C

(typical)

V

CE(on)

at I

= 400 A, 25 °C

C

600 V

1.60 V

TYPICAL APPLICATIONS

•UPS

• Switching mode power supplies

• Electronic welders

DESCRIPTION

Vishay’s IGBT power module provides ultralow conduction
loss as well as short circuit ruggedness. It is designed for
applications such as UPS and SMPS.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Gate to emitter voltage V

Collector current I

Pulsed collector current I

Diode continuous forward current I

Diode maximum forward current I

Maximum power dissipation P

Short circuit withstand time t

2

t-value, diode I2tV

I

RMS isolation voltage V

Note

(1)

Repetitive rating: Pulse width limited by maximum junction temperature.

CM

CES

GES

C

F

FM

SC

ISOL

TC = 25 °C 530

= 80 °C 400

T

C

(1)

D

tp = 1 ms 800

TJ = 175 °C 1600 W

TJ = 125 °C 5 μs

= 0 V, t = 10 ms, TJ = 125 °C 10 900 A2s

R

f = 50 Hz, t = 1 min 2500 V

600

± 20

400

800

V

A

Revision: 06-Aug-12

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1

, [e-mail], [e-mail]

Document Number: 93488

VS-GT400TH60N

www.vishay.com

IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

(BR)CES

VGE = 0 V, IC = 2 mA, TJ = 25 °C 600 - -

VGE = 15 V, IC = 400 A, TJ = 25 °C - 1.6 2.05

Gate to emitter threshold voltage V

Zero gate voltage collector current I

Gate to emitter leakage current I

CE(on)

GE(th)

CES

GES

= 15 V, IC = 400 A, TJ = 175 °C - 2.0 -

V

GE

VCE = VGE, IC = 4 mA, TJ = 25 °C 4.0 - 6.5

VCE = V

VGE = V

, VGE = 0 V, TJ = 25 °C - - 5.0 mA

CES

, VCE = 0 V, TJ = 25 °C - - 400 nA

GES

SWITCHING CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Input capacitance C

Reverse transfer capacitance C

SC data I

Internal gate resistance R

Stray inductance L

Module lead resistance, terminal to chip R

d(on)

r

d(off)

f

on

off

d(on)

r

d(off)

f

on

off

ies

oes

res

SC

gint

CE

CC’+EE’

VCC = 400 V, IC = 400 A, Rg = 1.3 ,
V

= ± 15 V, TJ = 25 °C

GE

VCC = 400 V, IC = 400 A, Rg = 1.3 ,
V

= ± 15 V, TJ = 175 °C

GE

VGE = 0 V, VCE = 30 V, f = 1.0 MHz

tsc  5 μs, VGE = 15 V, TJ = 125 °C, 

= 360 V, V

V

CC

CEM

 600 V

TC = 25 °C - 0.35 - m

Vishay Semiconductors

VCollector to emitter saturation voltage V

-35-

-70-

- 180 -

-75-

- 14.1 -

- 10.0 -

-37-

-72-

- 220 -

-84-

- 23.2 -

- 16.8 -

- 30.8 -

-2.12-

-0.92-

-TBD- A

-1.3- 

- - 20 nH

ns

mJ

ns

mJ

nFOutput capacitance C

DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

= 25 °C - 1.38 1.80

T

Diode forward voltage V

Diode reverse recovery charge Q

F

rr

IF = 400 A

IF = 400 A, VR = 300 V,

Diode peak reverse recovery current I

Diode reverse recovery energy E

rr

rec

Revision: 06-Aug-12

For technical questions within your region: [e-mail]

dI/dt = - 7000 A/μs,

= - 15 V

V

GE

2

, [e-mail], [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

J

T

= 125 °C - 1.41 -

J

= 25 °C - 15.5 -

T

J

T

= 125 °C - 28.5 -

J

TJ = 25 °C - 265 -

T

= 125 °C - 335 -

J

TJ = 25 °C - 3.5 -

T

= 125 °C - 7.5 -

J

Document Number: 93488

V

μC

A

mJ