C&H Technology VS-GT300YH120N User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

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Thank you for downloading this document from C&H Technology, Inc.

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Technical

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Assembly

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Phone – 1-800-274-4284

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C & H TECHNOLOGY, INC. ● 6121 BAKER RD. SUITE 108 ● MINNETONKA, MINNESOTA 55345 ●

800-274-4284 ● 952-933-6190 ● FAX: [phone] ● WWW.CHTECHNOLOGY.COM

www.vishay.com

Double INT-A-PAK

DIAP Trench IGBT Power Module - 1200 V, 300 A

Current Fed Inverter Topology

PRODUCT SUMMARY

IGBT

V

CES

V

(typical) at 300 A, 25 °C 2.17 V

CE(on)

I

at TC = 48 °C 300 A

D(DC)

®

HEXFRED

V

R

V

(typical) at 300 A, 25 °C 1.99 V

F

I

at 49 °C 300 A

F(DC)

IGBT AND HEXFRED

+ VF typical at 300 A 4.12 V

V

CE(on)

HEXFRED

V

(typical) at 10 A, 25 °C 1.6 V

F

I

at 63 °C 40 A

F(DC)

Package Double INT-A-PAK

Circuit Current Fed Inverter Topology

SERIES DIODE

®

SERIES DIODE

®

ANTIPARALLEL DIODE

1200 V

1200 V

VS-GT300YH120N

Vishay Semiconductors

FEATURES

• Trench IGBT technology with positive
temperature coefficient

• Low switching losses

• Maximum junction temperature 150 °C

• 10 μs short circuit capability

• Low inductance case

•HEXFRED
recovery

• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology

• Speed 4 kHz to 30 kHz

• Direct mounting to heatsink

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

BENEFITS

• Short circuit ruggedness









®

antiparallel and series diodes with soft reverse

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

IGBT

Collector to emitter voltage V

Collector current I

Clamped inductive load current I

Gate to emitter voltage V

Maximum power dissipation P

SERIES DIODE

Cathode to anode breakdown voltage V

Continuous forward current I

Peak repetitive forward current I

Revision: 25-Jul-13

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CES

C

LM

GE

D

RRM

F

FSM

TC = 80 °C 234

= 25 °C 341

C

TC = 80 °C 583

T

= 25 °C 1042

C

TC = 80 °C 232

T

= 25 °C 348

C

TC = 25 °C 2200 A

1

, [e-mail], [e-mail]

1200 V

700

± 30 V

1200

Document Number: 94681

AT

W

A

VS-GT300YH120N

www.vishay.com

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Maximum power dissipation P

ANTPARALLEL DIODE

Continuous forward current I

Peak repetitive forward current I

Maximum power dissipation P

MODULE

RMS isolation voltage V

Junction temperature range T

Storage temperature range T

Note

(1)

Max. RMS current admitted for the terminals 10 A

F

FSM

ISOL

STG

D

(1)

D

J

TC = 80 °C 438

T

= 25 °C 781

C

TC = 80 °C 36

T

= 25 °C 51

C

TC = 80 °C 77

T

= 25 °C 137

C

f = 50 Hz, t = 1 minute 4000 V

Vishay Semiconductors

n/a A

- 40 °C to 150 °C

- 40 °C to 150 °C

W

A

W

°C

ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IGBT

Collector to emitter breakdown voltage V

(BR)CES

Gate to emitter threshold voltage V

Collector to emitter leakage current I

Gate to emitter leakage current I

SERIES DIODE

Cathode to anode breakdown voltage V

Cathode to anode leakage current I

Forward voltage V

ANTIPARALLEL DIODE

Forward voltage V

®

IGBT AND HEXFRED

Collector to emitter saturation voltage +
Forward voltage

SERIES DIODE

V

CE(on)

CE(on)

GE(th)

CES

GES

R

R

F

F

+ VFIC = 300 A - 4.12 4.65 V

VGE = 0 V, IC = 0.5 mA, TJ = 25 °C 1200 - -

VGE = 15 V, IC = 300 A, TJ = 25 °C - 2.17 -

= 15 V, IC = 300 A, TJ = 125 °C - 2.4 -

V

GE

VCE = VGE, IC = 14 mA, TJ = 25 °C 4.7 5.6 7.8

VGE = 0 V, VCE = 1200 V - 0.003 0.3

V

= 0 V, VCE = 1200 V, TJ = 125 °C - 1.03 -

GE

mA

VGE = ± 30 V - - 400 nA

IC = 1.0 mA, TJ = 125 °C 1200 - -

VR = 1200 V - 0.003 0.2

V

= 1200 V, TJ = 125 °C - 3.5 -

R

mA

IF = 300 A - 1.99 -

I

= 300 A, TJ = 125 °C - 2.02 -

F

IF = 10 A - 1.6 -

I

= 10 A, TJ = 125 °C - 1.4 -

F

VCollector to emitter saturation voltage V

V

V

Revision: 25-Jul-13

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VS-GT300YH120N

www.vishay.com

SWITCHING CHARACTERISTICS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IGBT

Turn-on switching loss E

Turn-off switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Input capacitance C

Reverse transfer capacitance C

Reverse bias save operating area RBSOA

Short circuit save operating area SCSOA

SERIES DIODE

Diode reverse recovery charge Q

Reverse recovery time t

Reverse recovery current I

ANTIPARALLEL DIODE

Diode reverse recovery charge Q

Reverse recovery time t

on

off

d(on)

d(off)

on

off

ies

oes

res

rr

rr

rr

VCC = 600 V, IC = 300 A, Rg = 4.7 ,
V

= ± 15 V

GE

r

VCC = 600 V, IC = 300 A, Rg = 4.7 ,

= ± 15 V, TJ = 125 °C

V

f

GE

VCE = 30 V, f = 1.0 MHz

= 150 °C, Rg = 22 , 

T

J

V

= 15 V to 0 V, VCC = 600 V, 

GE

V

= 1200 V, IC = 700 A

P

= 150 °C, Rg = 22 , 

T

J

V

= 15 V to 0 V, VCC = 600 V, 

GE

V

= 1200 V

P

T

rr

IF = 50 A, 
V

= 400 V, 

R

dI/dt = - 500 A/μs

T

TJ = 25 °C - 230 -

T

TJ = 25 °C - 26 -

T

T

rr

IF = 10 A, 
V

= 400 V, 

R

dI/dt = 500 A/μs

T

TJ = 25 °C - 175 -

T

Vishay Semiconductors

- 35.2 -

- 26.3 -

- 776 -

- 263 -

- 816 -

- 131 -

- 36.1 -

- 32.1 -

-36-

-1.4-

-1.0-

---

- - 10 μs

= 25 °C - 3.0 -

J

= 125 °C - 8.0 -

J

= 125 °C - 370 -

J

= 125 °C - 43 -

J

= 25 °C - 2.1 -

J

= 125 °C - 3.4 -

J

= 125 °C - 241 -

J

mJ

ns

mJ

nFOutput capacitance C

μC

nS

A

μC

ns

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Junction to case
per ½ module

Series Diode - - 0.16

R

thJC

Antiparallel Diode - - 0.91

IGBT

Case to sink R

Mounting torque

thCS

Conductive grease applied - 0.035 -

Power terminal screw: M6 2.5 to 5.0

Mounting screw: M6 3.0 to 5.0

Weight 300 g

Revision: 25-Jul-13

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- - 0.12

Document Number: 94681

°C/W

Nm

www.vishay.com

IC - Continuous Collector Current IGBT (A)

Max. Allowable Case Temperature (°C)

0 50 100 150 200 250 300 350 400

60

40

20

0

80

100

120

140

160

0

100

200

300

400

500

600

012345

VGE = 12 V

V

GE

= 15 V

V

GE

= 9 V

VGE = 18 V

VCE (V)

I

C

(A)

0

VS-GT300YH120N

Vishay Semiconductors

Fig. 1 - Maximum IGBT Continuous Collector Current vs.

Case Temperature

600

V

= 18 V

GE

V

= 15 V

GE

500

VGE = 12 V

(A)

C

I

400

300

200

100

= 9 V

V

GE

0

012345

VCE (V)

Fig. 2 - Typical IGBT Output Characteristics, T

600

VGE = 18 V

V

= 15 V

GE

500

VGE = 12 V

400

V

= 9 V

GE

= 25 °C

J

Fig. 4 - Typical IGBT Output Characteristics, T

250

TJ = 125 °C

(A)

C

I

200

150

100

50

TJ = 25 °C

0

45678910

VGE (V)

Fig. 5 - Typical IGBT Transfer Characteristics

100

10

1

T

= 150 °C

J

TJ = 125 °C

= 150 °C

J

300

(A)

C

I

200

100

0

012345

Fig. 3 - Typical IGBT Output Characteristics, T

Revision: 25-Jul-13

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VCE (V)

0.1

(mA)

CES

I

0.01

TJ = 25 °C

100 200 300 400 500 600 700 800 900 1000 1100

V

(V)

CES

Document Number: 94681

120

= 125 °C

J

0.001

0.0001

Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current

4

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2

3

4

5

6

02468101214

V

GEth

(V)

IC (mA)

TJ = 25 °C

TJ = 125 °C

IF - Continuous Forward Current (A)

Allowable Case Temperature (°C)

0.00

20.00

40.00

60.00

80.00

100.00

120.00

140.00

160.00

0 50 100 150 200 250 300 350 400

V

FM -

Forward Voltage Drop (V)

I

F

-

Instantaneous Forward Drop (A)

0

50

100

150

200

250

300

350

400

450

500

550

600

0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3

TJ = 25 °C

TJ = 125 °C

T

J

= 150 °C

0

10

20

30

40

50

60

70

80

90

100

0.5 1 1.5 2 2.5 3 3.5 4

TJ = 150 °C

TJ = 25 °C

TJ = 125 °C

VF - Anode to Cathode Forward Voltage Drop (V)

I

F

(A)

VS-GT300YH120N

Vishay Semiconductors

160.00

140.00

120.00

100.00

80.00

60.00

40.00

20.00

Allowable Case Temperature (°C)

0.00
0102030405060

IF - Continuous Forward Current (A)

Fig. 7 - Typical IGBT Gate Threshold Voltage

Fig. 8 - Maximum Continuous Forward Current vs.

Case Temperature Series Diode

Fig. 10 - Maximum Continuous Forward Current vs.

Case Temperature Antiparallel Diode

Fig. 11 - Typical Diode Forward Voltage Characteristics of

= 500 μs

p

T

= 150 °C

J

100

10

Antiparallel Diode t

1

TJ = 125 °C

Revision: 25-Jul-13

Fig. 9 - Typical Series Diode Forward Voltage

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0.1

(mA)

R

I

0.01

TJ = 25 °C

0.001

0.0001
100 200 300 400 500 600 700 800 900 1000 1100 1200

VR (V)

Fig. 12 - Typical Series Diode Leakage Current vs. Reverse Voltage

5

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10

100

1000

10 000

0 50 100 150 200 250 300 350

Switching Time (ns)

Ic (A)

VGE = 15 V

L

= 500 μH

R

g

= 4.7 Ω

VCC = 600 V

t

d(off)

t

d(on)

t

f

t

r

5

10

15

20

25

30

35

40

100 200 300 400 500

I

rr

(A)

diF/dt (A/μs)

10 A, TJ = 25 °C

10 A, T

J

= 125 °C

40 A, T

J

= 25 °C

40 A, T

J

= 125 °C

VS-GT300YH120N

Vishay Semiconductors

40

V

= 600 V

CC

R

= 4.7 Ω

g

30

VGE = 15 V

= 500 μH

L

E

on

E

off

20

Energy (mJ)

10

0

0 50 100 150 200 250 300 350

Ic (A)

Fig. 13 - Typical IGBT Energy Loss vs. IC, TJ = 125 °C -

Freewheeling Diode VS-H3195D12A6B in TO-247 Package

140

V

= 600 V

CC

I

= 300 A

C

120

VGE = 15 V

= 500 μH

L

100

E

on

E

off

Energy (mJ)

80

60

40

10 000

t

d(off)

t

t

d(on)

f

1000

100

t

r

Switching Time (ns)

10

0102030

Rg (Ω)

Fig. 16 - Typical IGBT Switching Time vs. R

T

= 125 °C, IC = 100 A, VCE = 360 V, VGE = 15 V, L = 500 μH

J

500

(ns)

rr

t

450

400

350

300

250

200

10 A, TJ = 25 °C

10 A, T

= 125 °C

J

40 A, T

= 25 °C

J

40 A, T

= 125 °C

J

,

g

20

010203040

Rg (Ω)

Fig. 14 - Typical IGBT Energy Loss vs. R

Freewheeling Diode VS-H3195D12A6B in TO-247 Package

Fig. 15 - Typical IGBT Switching Time vs. I
Freewheeling Diode VS-H3195D12A6B in TO-247 Package

Revision: 25-Jul-13

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, TJ = 125 °C -

g

, TJ = 125 °C -

C

150

100 200 300 400 500

diF/dt (A/μs)

Fig. 17 - Typical t

Fig. 18 - Typical I

6

Antiparallel Diode vs. diF/dt, Vrr = 400 V

rr

Antiparallel Diode vs. diF/dt, Vrr = 400 V

rr

Document Number: 94681

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t

rr

(ns)

diF/dt (A/μs)

200

250

300

350

400

450

500

550

600

100 200 300 400 500

TJ = 25 °C

TJ = 125 °C

diF/dt (A/μs)

1000

2000

3000

4000

5000

6000

7000

8000

9000

10 000

100 200 300 400 500

Q

rr

(nC)

TJ = 25 °C

TJ = 125 °C

t1 - Rectangular Pulse Duration (s)

Z

thJC

-

Thermal Impedance

Junction to Case (°C/W)

0.0001

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

D = 0.50
D = 0..20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC

VS-GT300YH120N

Vishay Semiconductors

6000

40 A, T

= 125 °C

5000

10 A, TJ = 125 °C

0

100 200 300 400 500

(nC)

rr

Q

4000

3000

2000

1000

J

10 A, TJ = 25 °C

40 A, T

= 25 °C

J

diF/dt (A/μs)

Fig. 19 - Typical Qrr Antiparallel Diode vs. diF/dt, Vrr = 400 V

50

40

30

(A)

rr

I

20

10

0

100 200 300 400 500

Fig. 21 - Typical I

TJ = 125 °C

TJ = 25 °C

diF/dt (A/μs)

Chopper Diode vs. diF/dt, Vrr = 400 V, IF = 50 A

rr

Fig. 20 - Typical t

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Series Diode vs. diF/dt, Vrr = 400 V, IF = 50 A

rr

Fig. 23 - Maximum Thermal Impedance Z

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

7

Fig. 22 - Typical Q

Characteristics IGBT

thJC

Chopper Diode vs. diF/dt, Vrr = 400 V, IF = 40 A

rr

Document Number: 94681

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0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC

t1 - Rectangular Pulse Duration (s)

Z

thJC

-

Thermal Impedance

Junction to Case (°C/W)

VS-GT300YH120N

Vishay Semiconductors

CIRCUIT CONFIGURATION

ORDERING INFORMATION TABLE

Device code

Fig. 24 - Maximum Thermal Impedance Z

11

1

9

2

GVS- T 300 Y H 120 N

1

- Vishay Semiconductors product

1

- Insulated Gate Bipolar Transistor (IGBT)

2

- T = Trench IGBT technology

3

- Current rating (300 = 300 A)

4

- Y = Current Fed Inverter

5

- Package indicator (Double INT-A-PAK)

6

- Voltage rating (120 = 1200 V)

7

- N = Ultrafast

8

32 4 6 7 8

Characteristics Series Diode

thJC

6
7

3

5
4

5

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Mounting depth max.11

3-M6

16

28 28 20.1

6

13

2

22

93

106.4

6

2.8 x 0.5

23

6

30.5

61.4

48

30

8 9 11 10

45 76

15

27

35.4

7.2 ± 0.6

26

31

Ø 6.4

DIMENSIONS in millimeters

VS-GT300YH120N

Vishay Semiconductors

Revision: 25-Jul-13

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Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

1

Document Number: 91000