C&H Technology VS-GT300FD060N User Manual

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VS-GT300FD060N

www.vishay.com

Vishay Semiconductors

DIAP Low Profile 3-Levels Half-Bridge Inverter Stage, 300 A

FEATURES

• Trench plus Field Stop IGBT technology

•FRED Pt® antiparallel and clamping diodes

• Short circuit capability

• Speed 4 kHz to 30 kHz

• Low stray internal inductances

• Low switching loss

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

APPLICATION

• Solar converters

PRODUCT SUMMARY

V

CES

typical

V

CE(ON)

at I

= 300 A

C

at TC = 25 °C 379 A

I

C

600 V

1.72 V

• Uninterruptable power supplies

BENEFITS

• Direct mounting on heatsink

• Low junction to case thermal resistance

• Easy paralleling due to positive T

of V

C

CE(sat)

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Operating junction temperature T

Storage temperature range T

RMS isolation voltage V

Gate to emitter voltage V

Pulsed collector current I

Clamped inductive load current I

Continuous collector current I

Power dissipation P

J

Stg

ISOL

CES

GES

CM

LM

C

D

TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s 3500

20

TC = 25 °C 379

= 80 °C 288

T

C

TC = 25 °C 1250

= 80 °C 792

T

C

D5 - D6 CLAMPING DIODE

Repetitive peak reverse voltage V

Single pulse forward current I

Diode continuous forward current I

Power dissipation P

RRM

FSM

F

10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 800

TC = 25 °C 215

= 80 °C 161

T

C

D

TC = 25 °C 500

= 80 °C 317

T

C

D - D2 - D3 - D4 AP DIODE

Single pulse forward current I

Diode continuous forward current I

Power dissipation P

FSM

F

D

10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 800

TC = 25 °C 215

= 80 °C 161

T

C

TC = 25 °C 500

= 80 °C 317

T

C

Note

• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.

175

- 40 to 175

600

650

650

600 V

°C

VCollector to emitter voltage V

A

W

A

W

A

W

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VS-GT300FD060N

www.vishay.com

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Q1 - Q2 - Q3 - Q4 TRENCH IGBT

Collector to emitter breakdown voltage BV

Gate threshold voltage V

Temperature coefficient of threshold
voltage

V

GE(th)

Forward transconductance g

Transfer characteristics V

Zero gate voltage collector current I

Gate to emitter leakage current I

D5 - D6 CLAMPING DIODE

Cathode to anode blocking voltage V

Forward voltage drop V

Reverse leakage current I

D1 - D2 - D3 - D4 AP DIODE

Forward voltage drop V

CES

CE(ON)

GE(th)

/T

fe

GE

CES

GES

BR

FM

RM

FM

VGE = 0 V, IC = 500 μA 600 - -

VGE = 15 V, IC = 300 A - 1.72 2.5

V

= 15 V, IC = 300 A, TJ = 125 °C - 1.93 -

GE

VCE = VGE, IC = 16.8 mA 2.9 4.8 7.5

VCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 17.8 - mV/°C

J

VCE = 20 V, IC = 300 A - 315 - S

VCE = 20 V, IC = 300 A - 7.9 - V

VGE = 0 V, VCE = 600 V - 0.4 250

= 0 V, VCE = 600 V, TJ = 125 °C - 300 -

V

GE

VGE = ± 20 V, VCE = 0 V - - ± 500 nA

IR = 100 μA 600 - -

IF = 150 A - 2.17 2.7

I

= 150 A, TJ = 125 °C - 1.61 -

F

VR = 600 V - 0.25 200

= 600 V, TJ = 125 °C - 140 -

V

R

IF = 150 A - 2.17 2.7

= 150 A, TJ = 125 °C - 1.61 -

I

F

Vishay Semiconductors

VCollector to emitter voltage V

μA

V

μA

V

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Q1 - Q2 - Q3 - Q4 TRENCH IGBT

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

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ge

gc

ON

OFF

TOT

ON

OFF

TOT

ON

OFF

TOT

d(on)

d(off)

g

IC= 300 A

= 400 V

V

CC

= 15 V

V

GE

IC = 150 A, VCC = 300 V

= 15 V, Rg = 10 

V

GE

L = 500 μH , T

= 25 °C

J

IC = 300 A, VCC = 300 V

= 15 V, Rg = 22 

V

GE

L = 500 μH, T

= 25 °C

J

IC = 150 A

= 300 V

V

CC

= 15 V

V

GE

R

= 10 

r

f

g

L = 500 μH

= 125 °C

T

J

2

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- 750 -

- 210 -

- 300 -

-2.1-

-3.1-

-5.2-

-8.6-

- 15.4 -

-24-

-2.6-

-3.7-

-6.3-

- 453 -

- 120 -

- 366 -

- 119 -

Document Number: 93569

nCGate to ermitter charge (turn-on) Q

mJ

ns

www.vishay.com

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

Q1 - Q2 - Q3 - Q4 TRENCH IGBT

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Input capacitance C

Reverse transfer capacitance C

Reverse bias safe operating area RBSOA

Short circuit safe operating area SCSOA

D5 - D6 CLAMPING DIODE

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

D1 - D2 - D3 - D4 AP DIODE

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

ON

OFF

TOT

d(on)

d(off)

ies

oes

res

rr

rr

rr

rr

rr

rr

rr

rr

IC = 300 A

= 300 V

V

CC

V

= 15 V

GE

R

= 22 

r

f

g

L = 500 μH

= 125 °C

T

J

VGE = 0 V
V

= 30 V

CC

f = 1 MHz

= 175 °C, IC = 650 A

T

J

V

= 270 V, VP = 600 V

CC

R

= 22 , V

g

V

= 400 V, Vp = 600 V

CC

R

= 10 , V

g

= 15 V to 0 V

GE

= 15 V to 0 V

GE

VR = 200 V
I

= 50 A

F

rr

dl/dt = 500 A/μs

VR = 200 V
I

= 50 A

F

rr

dl/dt = 500 A/μs, T

= 125 °C

J

VR = 200 V

= 50 A

I

F

rr

dl/dt = 500 A/μs

VR = 200 V

= 50 A

I

F

rr

dl/dt = 500 A/μs, T

= 125 °C

J

VS-GT300FD060N

Vishay Semiconductors

- 10.7 -

- 15.6 -

- 26.3 -

- 840 -

- 279 -

- 566 -

- 129 -

- 23.3 -

-1.7-

-0.7-

--5.0μs

- 105 - ns

- 13.5 - A

- 712 - nC

- 166 - ns

- 24.5 - A

- 2050 - nC

- 105 - ns

- 13.5 - A

- 712 - nC

- 166 - ns

- 24.5 - A

- 2050 - nC

mJTurn-off switching loss E

ns

nFOutput capacitance C

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Junction to case IGBT thermal resistance (per switch)

Case to sink, flat, greased surface (per module) R

R

thJC

thCS

Mounting torque, case to heatsink: M6 screw 4 - 6

Mounting torque, case to terminal: 1, 2, 3, 4: M5 screw 2 - 4

Weight - 270 - g

Revision: 15-Oct-12

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- - 0.12

-0.05-

Document Number: 93569

°C/WJunction to case diode thermal resistance (per diode) - - 0.3

Nm

(A)

DC

TJ - Junction Temperature (°C)

V

CE

(V)

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

0 20 40 60 80 100 120 140 160 180

300 A

150 A

80 A

V

GE(th)

(V)

IC (mA)

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

TJ = 25 °C

T

J

= 125 °C

C

I

www.vishay.com

600

550

500

450

400

350

300

250

200

150

100

50

0

0 0.5 1 1.5 2 2.5 3 3.5 4

TJ = 25 °C

VCE (V)

= 175 °C

T

J

= 125 °C

T

J

VS-GT300FD060N

Vishay Semiconductors

Fig. 1 - Typical Trench IGBT Output Characteristics, VGE = 15 V

600

(A)

C

I

550

500

450

400

350

300

250

200

150

100

50

0

0 0.5 1 1.5 2 2.5 3 3.5 4

VGE = 12 V

V

V

= 15 V

GE

= 18 V

GE

VCE (V)

Fig. 2 - Typical Trench IGBT Output Characteristics, T

200

180

160

140

120

100

80

60

40

20

Allowable Case Temperature (°C)

0

0 50 100 150 200 250 300 350 400 450

IC - Continuous Collector Current (A)

Fig. 3 - Maximum Trench IGBT Continuous Collector Current vs.

Case Temperature (per switch)

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Fig. 4 - Typical Trench IGBT Collector to Emitter Voltage vs.

Junction Temperature, V

600

= 20 V

V

550

CE

500

450

400

V

= 9 V

GE

(A)

CE

I

350

300

250

200

150

100

50

0

3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

= 125 °C

T

J

= 15 V

GE

TJ = 25 °C

VGE (V)

= 125 °C

J

Fig. 5 - Typical Trench IGBT Transfer Characteristics

Fig. 6 - Typical Trench IGBT Gate Threshold Voltage

4

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V

CES

(V)

I

CES

(mA)

0.00001

0.0001

0.001

0.01

0.1

1

10

100

100 200 300 400 500 600

25 °C

125 °C

175 °C

IF - Continuous Forward Current (A)

Allowable Case Temperature (°C)

0

20

40

60

80

100

120

140

160

180

200

0

40

80 120 160 200 240

DC

V

CES

(V)

I

CES

(mA)

0.00001

0.0001

0.001

0.01

0.1

1

10

100

100 200 300 400 500 600

TJ = 25 °C

T

J

= 125 °C

T

J

= 175 °C

VS-GT300FD060N

Vishay Semiconductors

Fig. 7 - Typical Trench IGBT Zero Gate Voltage Collector Current

600
550

500

= 175 °C

(A)

F

I

450

400

350

300

250

200

150

100

50

0

0 0 .5 1 1.5 2 2.5 3 3 .5 4

T

= 125 °C

J

T

J

TJ = 25 °C

VFM (V)

Fig. 8 - Typical Diode Forward Characteristics

Fig. 10 - Typical Diode Reverse Leakage Current

3.8

3.4

3.0

E

OFF

E

ON

Energy (mJ)

2.6

2.2

1.8

1.4

1.0
40 60 80 100 120 140 160

IC (A)

Fig. 11 - Typical Trench IGBT Energy Loss vs. I

T

= 125 °C, VCC = 300 V, Rg = 10 , VGE = 15 V, L = 500 μH

J

1000

t

d(on)

t

t

f

d(off)

,

C

Fig. 9 - Maximum Diode Forward Current vs. Case Temperature

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100

t

r

Switching time (ns)

10

40 60 80 100 120 140 160

IC (A)

Fig. 12 - Typical IGBT Switching Time vs. I

T

= 125 °C, VCC = 300 V, Rg = 10 , VGE = 15 V, L = 500 μH

J

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,

C

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IC (A)

Energy (mJ)

1

3

5

7

9

11

13

15

17

20 60 100 140 180 220 260 300 340

E

ON

E

OFF

Switching time (ns)

IC (A)

10

100

1000

20 60 100 140 180 220 260 300 340

t

f

t

d(on)

t

d(off)

t

r

Rg (Ω)

Energy (mJ)

8

11

14

17

20

23

26

29

32

20 23 26 29 32 35 38 41 44 47 50

E

ON

E

OFF

10

100

1000

10 000

20 23 26 29 32 35 38 41 44 47 50

Switching time (ns)

Rg (Ω)

t

d(on)

t

d(off)

t

r

t

f

1000

100

10

1

0 100 200 300 400 500 600 700

VCE (V)

I

C

(A)

VS-GT300FD060N

Vishay Semiconductors

Fig. 13 - Typical Trench IGBT Energy Loss vs. IC,

T

= 125 °C, VCC = 300 V, Rg = 22 , VGE = 15 V, L = 500 μH

J

Fig. 14 - Typical IGBT Switching Time vs. I

T

= 125 °C, VCC = 300 V, Rg = 22 , VGE = 15 V, L = 500 μH

J

Fig. 15 - Typical Trench IGBT Energy Loss vs.R

T

= 125 °C, VCC = 300 V, IC = 300 A, VGE = 15 V, L = 500 μH

J

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Fig. 16 - Typical Trench IGBT Switching Time vs.R

T

= 125 °C, VCC = 300 V, IC = 300 A, VGE = 15 V, L = 500 μH

J

,

C

(ns)

rr

t

Fig. 17 - Trench IGBT Reverse Bias SOA

T

= 175 °C, VGE = 15 V, Rg = 22 

J

240

220

200

180

160

140

120

100

80

60

100 200 300 400 500

T

= 125 °C

J

TJ = 25 °C

,

g

dIF/dt (A/μs)

,

g

6

Fig. 18 - Typical Diode Reverse Recovery Time vs. dI

V

= 200 V, IF = 50 A

rr

Document Number: 93569

F

/dt,

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dIF/dt (A/μs)

I

rr

(A)

2

4

6

8

10

12

14

16

18

20

22

24

26

28

100 200 300 400 500

TJ = 25 °C

T

J

= 125 °C

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance

Junction to Case (°C/W)

0.0001

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

0.5

0.2

0.1

0.05

0.02

0.01

DC

0.0001

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

0.5

0.2

0.1

0.05

0.02

0.01

DC

t1 - Rectangular Pulse Duration (s)

Z

thJC

-

Thermal Impeadnce

Junction to Case (°C/W)

VS-GT300FD060N

Vishay Semiconductors

2400

2200

= 125 °C

2000

1800

1600

1400

1200

(nC)

rr

1000

Q

800

600

400

200

0

100 200 300 400 500

dIF/dt (A/μs)

T

J

TJ = 25 °C

Fig. 19 - Typical Diode Reverse Recovery Current vs. dIF/dt,

V

= 200 V, IF = 50 A

rr

Fig. 21 - Maximum Thermal Impedance Z

Fig. 20 - Typical Diode Reverse Recovery Charge vs. dI

V

= 200 V, IF = 50 A

rr

Characeristics (Trench IGBT)

thJC

F

/dt,

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Fig. 22 - Maximum Thermal Impedance Z

Characeristics (Diode)

thJC

7

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Document Number: 93569

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1 - Vishay Semiconductors product

2 - Insulated Gate Bipolar Transistor

3 - T = Trench IGBT

4 - Current rating (300 = 300 A)

5 - F = Three level circuit configuration

6 - Package Indicator D = Dual INT-A-PAK Low Profile

7 - Voltage rating (060 = 600 V)

Device code

51 32 4 6 7

VS- G T 300 F D N060

8

8 - N = Ultrafast

1

5
6

7
8

9

2

10

11
12

3

Q1

Q2

Q3

Q4

D1

D2D3D5

D6

D4

4

ORDERING INFORMATION TABLE

VS-GT300FD060N

Vishay Semiconductors

CIRCUIT CONFIGURATION

Dimensions www.vishay.com/doc?95515

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LINKS TO RELATED DOCUMENTS

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Document Number: 93569

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DIMENSIONS in millimeters

DIAP Low Profile - 4 Leads

2.8 x 0.5

14

Outline Dimensions

Vishay Semiconductors

62 ± 1

16 ± 0.5

7.5

48 ± 0.25

5.1 ± 0.5

Ø 6.40

15 ± 0.5

6.5

108 ± 1

93 ± 0.25

9

10

M5 (4 x)

12

11

12

27 ± 0.5

48 ± 0.5

2

4

13

27 ± 0.5

48 ± 0.5

7

8

6

5

15 ± 0.5

21.9 ± 0.5

27 ± 0.5

18.2 ± 0.5 17 ± 0.5

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Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12

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Document Number: 91000