C&H Technology VS-GT300FD060N User Manual
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Suite 108
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Phone (952) 933-6190
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1-800-274-4284
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VS-GT300FD060N
www.vishay.com
Vishay Semiconductors
DIAP Low Profile 3-Levels Half-Bridge Inverter Stage, 300 A
FEATURES
• Trench plus Field Stop IGBT technology
•FRED Pt® antiparallel and clamping diodes
• Short circuit capability
• Speed 4 kHz to 30 kHz
• Low stray internal inductances
• Low switching loss
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATION
• Solar converters
PRODUCT SUMMARY
V
CES
typical
V
CE(ON)
at I
= 300 A
C
at TC = 25 °C 379 A
I
C
600 V
1.72 V
• Uninterruptable power supplies
BENEFITS
• Direct mounting on heatsink
• Low junction to case thermal resistance
• Easy paralleling due to positive T
of V
C
CE(sat)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Operating junction temperature T
Storage temperature range T
RMS isolation voltage V
Gate to emitter voltage V
Pulsed collector current I
Clamped inductive load current I
Continuous collector current I
Power dissipation P
J
Stg
ISOL
CES
GES
CM
LM
C
D
TJ = 25 °C, all terminals shorted, f = 50 Hz, t = 1 s 3500
20
TC = 25 °C 379
= 80 °C 288
T
C
TC = 25 °C 1250
= 80 °C 792
T
C
D5 - D6 CLAMPING DIODE
Repetitive peak reverse voltage V
Single pulse forward current I
Diode continuous forward current I
Power dissipation P
RRM
FSM
F
10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 800
TC = 25 °C 215
= 80 °C 161
T
C
D
TC = 25 °C 500
= 80 °C 317
T
C
D - D2 - D3 - D4 AP DIODE
Single pulse forward current I
Diode continuous forward current I
Power dissipation P
FSM
F
D
10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 800
TC = 25 °C 215
= 80 °C 161
T
C
TC = 25 °C 500
= 80 °C 317
T
C
Note
• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
175
- 40 to 175
600
650
650
600 V
°C
VCollector to emitter voltage V
A
W
A
W
A
W
Revision: 15-Oct-12
For technical questions within your region: DiodesAmericas@vishay.com
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93569
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT300FD060N
www.vishay.com
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Q1 - Q2 - Q3 - Q4 TRENCH IGBT
Collector to emitter breakdown voltage BV
Gate threshold voltage V
Temperature coefficient of threshold
voltage
V
GE(th)
Forward transconductance g
Transfer characteristics V
Zero gate voltage collector current I
Gate to emitter leakage current I
D5 - D6 CLAMPING DIODE
Cathode to anode blocking voltage V
Forward voltage drop V
Reverse leakage current I
D1 - D2 - D3 - D4 AP DIODE
Forward voltage drop V
CES
CE(ON)
GE(th)
/T
fe
GE
CES
GES
BR
FM
RM
FM
VGE = 0 V, IC = 500 μA 600 - -
VGE = 15 V, IC = 300 A - 1.72 2.5
V
= 15 V, IC = 300 A, TJ = 125 °C - 1.93 -
GE
VCE = VGE, IC = 16.8 mA 2.9 4.8 7.5
VCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 17.8 - mV/°C
J
VCE = 20 V, IC = 300 A - 315 - S
VCE = 20 V, IC = 300 A - 7.9 - V
VGE = 0 V, VCE = 600 V - 0.4 250
= 0 V, VCE = 600 V, TJ = 125 °C - 300 -
V
GE
VGE = ± 20 V, VCE = 0 V - - ± 500 nA
IR = 100 μA 600 - -
IF = 150 A - 2.17 2.7
I
= 150 A, TJ = 125 °C - 1.61 -
F
VR = 600 V - 0.25 200
= 600 V, TJ = 125 °C - 140 -
V
R
IF = 150 A - 2.17 2.7
= 150 A, TJ = 125 °C - 1.61 -
I
F
Vishay Semiconductors
VCollector to emitter voltage V
μA
V
μA
V
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Q1 - Q2 - Q3 - Q4 TRENCH IGBT
Total gate charge (turn-on) Q
Gate to collector charge (turn-on) Q
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Revision: 15-Oct-12
For technical questions within your region: DiodesAmericas@vishay.com
ge
gc
ON
OFF
TOT
ON
OFF
TOT
ON
OFF
TOT
d(on)
d(off)
g
IC= 300 A
= 400 V
V
CC
= 15 V
V
GE
IC = 150 A, VCC = 300 V
= 15 V, Rg = 10
V
GE
L = 500 μH , T
= 25 °C
J
IC = 300 A, VCC = 300 V
= 15 V, Rg = 22
V
GE
L = 500 μH, T
= 25 °C
J
IC = 150 A
= 300 V
V
CC
= 15 V
V
GE
R
= 10
r
f
g
L = 500 μH
= 125 °C
T
J
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
- 750 -
- 210 -
- 300 -
-2.1-
-3.1-
-5.2-
-8.6-
- 15.4 -
-24-
-2.6-
-3.7-
-6.3-
- 453 -
- 120 -
- 366 -
- 119 -
Document Number: 93569
nCGate to ermitter charge (turn-on) Q
mJ
ns
www.vishay.com
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
Q1 - Q2 - Q3 - Q4 TRENCH IGBT
Turn-on switching loss E
Total switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Input capacitance C
Reverse transfer capacitance C
Reverse bias safe operating area RBSOA
Short circuit safe operating area SCSOA
D5 - D6 CLAMPING DIODE
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
D1 - D2 - D3 - D4 AP DIODE
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
ON
OFF
TOT
d(on)
d(off)
ies
oes
res
rr
rr
rr
rr
rr
rr
rr
rr
IC = 300 A
= 300 V
V
CC
V
= 15 V
GE
R
= 22
r
f
g
L = 500 μH
= 125 °C
T
J
VGE = 0 V
V
= 30 V
CC
f = 1 MHz
= 175 °C, IC = 650 A
T
J
V
= 270 V, VP = 600 V
CC
R
= 22 , V
g
V
= 400 V, Vp = 600 V
CC
R
= 10 , V
g
= 15 V to 0 V
GE
= 15 V to 0 V
GE
VR = 200 V
I
= 50 A
F
rr
dl/dt = 500 A/μs
VR = 200 V
I
= 50 A
F
rr
dl/dt = 500 A/μs, T
= 125 °C
J
VR = 200 V
= 50 A
I
F
rr
dl/dt = 500 A/μs
VR = 200 V
= 50 A
I
F
rr
dl/dt = 500 A/μs, T
= 125 °C
J
VS-GT300FD060N
Vishay Semiconductors
- 10.7 -
- 15.6 -
- 26.3 -
- 840 -
- 279 -
- 566 -
- 129 -
- 23.3 -
-1.7-
-0.7-
--5.0μs
- 105 - ns
- 13.5 - A
- 712 - nC
- 166 - ns
- 24.5 - A
- 2050 - nC
- 105 - ns
- 13.5 - A
- 712 - nC
- 166 - ns
- 24.5 - A
- 2050 - nC
mJTurn-off switching loss E
ns
nFOutput capacitance C
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Junction to case IGBT thermal resistance (per switch)
Case to sink, flat, greased surface (per module) R
R
thJC
thCS
Mounting torque, case to heatsink: M6 screw 4 - 6
Mounting torque, case to terminal: 1, 2, 3, 4: M5 screw 2 - 4
Weight - 270 - g
Revision: 15-Oct-12
For technical questions within your region: DiodesAmericas@vishay.com
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
- - 0.12
-0.05-
Document Number: 93569
°C/WJunction to case diode thermal resistance (per diode) - - 0.3
Nm
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