C&H Technology VS-GT250TX120U User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

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Assembly

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Phone – 1-800-274-4284

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C & H TECHNOLOGY, INC. ● 6121 BAKER RD. SUITE 108 ● MINNETONKA, MINNESOTA 55345 ●

800-274-4284 ● 952-933-6190 ● FAX: [phone] ● WWW.CHTECHNOLOGY.COM

www.vishay.com

X-MAP

Half-Bridge - Trench IGBT, 250 A

PRODUCT SUMMARY

IGBT

V

CES

V

(typical) at 250 A, 25 °C 2.42 V

CE(on)

at 80 °C 250 A

I

D(DC)

HEXFRED

trr (typical) 170 ns

I

at 88 °C 250 A

F(DC)

Type Modules - IGBT

Package X-MAP

®

Preliminary

X-MAP Power Module

FEATURES AND BENEFITS

• Trench IGBT technology with positive
temperature coefficient

• Square RBSOA

• 10 μs short circuit capability

• HEXFRED antiparallel diodes with soft reverse recovery

•T

maximum = 175 °C

J

• Fully isolated package

• Industry standard outline

• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating

• Easy to assemble and parallel

1200 V

• Direct mounting to heatsink

• Speed 4 kHz to 30 kHz

• Very low V

CE(on)

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

REMARKS

• Product reliability results valid for TJ = 150 °C

• Recommended operation temperature T

VS-GT250TX120U

Vishay Semiconductors

= 150 °C

op

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

IGBT

Drain to source voltage V

Continuous collector current, V

Pulsed collector current I

Clamped inductive load current I

Power dissipation P

Gate to source voltage V

HEXFRED

Peak repetitive reverse voltage V

Continuous forward current I

Peak repetitive forward current I

Power dissipation P

MODULE

Operating junction temperature range T

Storage temperature range T

RMS isolation voltage V

at 15 V I

GE

CES

C

CM

LM

GS

RRM

F

FSM

Stg

ISOL

TC = 25 °C 334

T

= 80 °C 250

C

D

D

J

TC = 25 °C 1250

= 80 °C 792

T

C

TC = 25 °C 354

= 80 °C 265

C

TC = 25 °C 1071

T

= 80 °C 679

C

Any terminal to case, t = 1 s 3500 V

1200 V

n/a

n/a

± 30 V

1200 V

n/a

- 55 to + 175

- 40 to + 175

A

W

AT

W

°C

Revision: 08-Jul-13

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1

, [e-mail], [e-mail]

Document Number: 93618

Preliminary

VS-GT250TX120U

www.vishay.com

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Breakdown voltage
temperature coefficient

V

BR(CES)

(BR)CES

Collector to emitter voltage V

Gate threshold voltage V

Forward transconductance g

Collector to emitter leakage current I

Gate to emitter leakage current I

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Turn-off switching loss E

Turn-on switching loss E

Turn-off switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Input capacitance C

Reverse transfer capacitance C

Forward voltage V

Reverse recovery time t

Reverse recovery charge Q

Junction capacitance C

CE(on)

GE(th)

fe

CES

GES

g

ge

gc

on

off

on

off

d(on)

r

d(off)

f

iss

oss

rss

F

rr

rr

T

VGE = 0 V, IC = 500 μA 1200 - - V

/TJReference to 25 °C, IC = 1 mA - n/a - V/°C

VGE = 15 V, IC = 250 A - 2.42 -

= 15 V, IC = 250 A, TJ = 125 °C - 2.82 -

V

GE

VCE = VGE, IC = 1.0 mA - 3.5 - V

VCE = 20 V, IC = 250 A - 275 - S

VGE = 0 V, V

= 0 V, V

V

GE

= 1200 V - 0.04 -

CE

= 1200 V, TJ = 125 °C - 2.9 -

CE

VGE = ± 30 V - - ± 600 nA

IC = 250 A
V

= 600 V

CE

V

= 15 V

GE

IC = 250 A, VCC = 600 V, VGE = 15 V, 
R

= 3.3 , L = 500 μH, TJ = 25 °C

g

VCC = 600 V, TJ = 125 °C
I

= 250 A

C

R

= 3.3 , L = 500 μH

g

= 15 V

V

GE

VGE = 0 V
V

= 30 V

CE

f = 1.0 MHz

IF = 250 A - 2.27 -

= 250 A, TJ = 125 °C - 2.42 -

I

F

IF = 250 A, Rg = 3.3 , L = 500 μH,
V

= 600 V

R

= 250 A, Rg = 3.3 , L = 500 μH, 

I

F

= 600 V, TJ = 125 °C

V

R

IF = 250 A, Rg = 3.3 , L = 500 μH,
V

= 600 V

R

= 250 A, Rg = 3.3 , L = 500 μH, 

I

F

V

= 600 V, TJ = 125 °C

R

VR = 1200 V - n/a - pF

Vishay Semiconductors

V

mA

-1200-

-360-

-510-

- 15.5 -

- 14.8 -

- 22.4 -

- 17.7 -

-425-

-112-

-436-

-138-

-3.0-

-1.0-

-0.7-

-170-

-371-

- 12.1 -

- 29.1 -

nCGate to emitter charge (turn-on) Q

mJ

ns

nFOutput capacitance C

V

ns

μC

INTERNAL NTC - THERMISTOR SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS TYP. UNITS

Resistance R

Resistance R

25

125

B-constant B R

Temperature range - 40 to 125

Maximum operating temperature 220

Dissipation constant 2mW/°C

Thermal time constant 8s

Revision: 08-Jul-13

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TJ = 25 °C 5000 ± 5 %

TJ = 125 °C 493 ± 5 %

[B(1/T2 - 1/T1)]

= R1e

2

2

3.375 ± 5 % K

Document Number: 93618

, [e-mail], [e-mail]



°C