C&H Technology VS-GT175DA120U User Manual

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Suite 108
Minnetonka, MN 55345

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www.vishay.com

SOT-227

Insulated Gate Bipolar Transistor

(Trench IGBT), 175 A

PRODUCT SUMMARY

V

CES

I

DC 175 A at 90 °C

C

V

typical at 100 A, 25 °C 1.73 V

CE(on)

Note

(1)

Maximum collector current admitted is 100 A, to not exceed the
maximum temperature of terminals

1200 V

(1)

VS-GT175DA120U

Vishay Semiconductors

FEATURES

• Trench IGBT technology with positive
temperature coefficient

•Square RBSOA

• 10 μs short circuit capability

•HEXFRED
recovery

•TJ maximum = 150 °C

• Fully isolated package

• Very low internal inductance ( 5 nH typical)

• Industry standard outline

• UL approved file E78996

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

BENEFITS

• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating

• Easy to assemble and parallel

• Direct mounting to heatsink

• Plug-in compatible with other SOT-227 packages

• Speed 4 kHz to 30 kHz

• Very low V

• Low EMI, requires less snubbing

®

antiparallel diodes with ultrasoft reverse

CE(on)

Note

(1)

Revision: 02-Aug-12

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Gate to emitter voltage V

Power dissipation, IGBT P

Power dissipation, diode P

Isolation voltage V

Maximum collector current admitted is 100 A, to do not exceed the maximum temperature of terminals

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

CES

C

CM

LM

ISOL

TC = 25 °C 288

(1)

T

= 90 °C 175

C

TC = 25 °C 54

F

T

= 90 °C 32

C

GE

TC = 25 °C 1087

D

D

= 90 °C 522

T

C

TC = 25 °C 219

T

= 90 °C 105

C

Any terminal to case, t = 1 min 2500 V

1

, [e-mail], [e-mail]

1200 V

450

450

± 20 V

Document Number: 93990

A

W

VS-GT175DA120U

www.vishay.com

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Collector to emitter voltage V

Gate threshold voltage V

Temperature coefficient of threshold
voltage

V

GE(th)

Collector to emitter leakage current I

Forward voltage drop, diode V

Gate to emitter leakage current I

BR(CES)

CE(on)

GE(th)

CES

FM

GES

VGE = 0 V, IC = 250 μA 1200 - -

VGE = 15 V, IC = 75 A - 1.73 2.1

V

= 15 V, IC = 75 A, TJ = 125 °C - 1.98 2.2

GE

V

= 15 V, IC = 75 A, TJ = 150 °C - 2.05 -

GE

VCE = VGE, IC = 250 μA - 5 -

V

= VGE, IC = 7.5 mA 4.9 5.9 7.9

CE

V

= VGE, IC = 250 μA, TJ = 125 °C - 2.9 -

CE

/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 17.6 - mV/°C

VGE = 0 V, VCE = 1200 V - 0.9 100 μA

V

= 0 V, VCE = 1200 V, TJ = 125 °C - 0.85 10

GE

= 0 V, VCE = 1200 V, TJ = 150 °C - 4 20

V

GE

IF = 40 A, VGE = 0 V - 3.12 3.44

= 40 A, VGE = 0 V, TJ = 125 °C - 3.15 3.47

F

I

= 40 A, VGE = 0 V, TJ = 150 °C - 3.25 -

F

VGE = ± 20 V - - ± 200 nA

Vishay Semiconductors

V

mA

VI

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Reverse bias safe operating area RBSOA

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Short circuit safe operating area SCSOA

Revision: 02-Aug-12

For technical questions within your region: [e-mail]

ge

gc

on

off

tot

d(on)

r

d(off)

f

on

off

tot

d(on)

r

d(off)

f

rr

rr

rr

rr

g

IC = 150 A (tp < 400 μs, D < 2 %),
V

= 600 V, VGE = 15 V

CC

IC = 100 A, VCC = 7200 V,

= 15 V, Rg = 5 

V

GE

L = 500 μH, T

= 25 °C

J

Energy losses
include tail
and diode
recovery
Diode used

IC = 100 A, VCC = 7200 V,
V

= 15 V, Rg = 5 

GE

L = 500 μH, T

T

= 150 °C, IC = 450 A, Rg = 22 

J

= 15 V to 0 V, VCC = 900 V,

V

GE

V

= 1200 V, L = 500 μH

P

= 125 °C

J

HFA16PB120

IF = 50 A, dIF/dt = 200 A/μs, VR = 400 V

rr

IF = 50 A, dIF/dt = 200 A/μs,
V

= 400 V, TJ = 125 °C

rr

R

= 150 °C, Rg = 22 ,

T

J

= 15 V to 0 V, VCC = 900 V,

V

GE

V

= 1200 V

p

2

, [e-mail], [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

- 830 -

- 180 -

- 380 -

-4.03-

-6.9-

- 10.93 -

- 310 -

-65-

- 325 -

- 170 -

-5.07-

- 10.59 -

- 15.66 -

- 325 -

-80-

- 330 -

- 235 -

Fullsquare

- 164 - ns

-12- A

- 994 - nC

- 230 - ns

- 16.5 - A

- 1864 - nC

10 μs

Document Number: 93990

nCGate to emitter charge (turn-on) Q

mJTurn-off switching loss E

ns

mJTurn-off switching loss E

ns

VS-GT175DA120U

Allowable Case Temperature (°C)

IC - Continuous Collector Current (A)

0 40 80 120 200160 240 280 320

0

160

100

120

140

20

40

60

80

DC

V

CE -

Collector-to-Emitter Voltage (V)

I

C

-

Collector to Emitter Current (A)

04.00.5 1.0 1.5 2.0 2.5 3.0 3.5

0

300

100

200

275

75

175

250

50

150

225

25

125

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

VGE = 15 V

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THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Maximum junction and storage temperature range T

Junction to case thermal resistance

IGBT

Case to sink thermal resistance, flat, greased surface R

J

R

, T

thJC

thCS

Stg

Mounting torque, on terminals and heatsink - - 1.3 Nm

Weight -30- g

Case style SOT-227

Fig. 1 - Maximum DC IGBT Collector Current vs.

Case Temperature

- 40 - 150 °C

- - 0.115

-0.05-

160

140

120

100

80

60

40

20

Allowable Case Temperature (°C)

0

0 10 20 30 40 50 60 70 80

IF - Continuous Forward Current (A)

Fig. 3 - Maximum Allowable Forward Current vs. Case Temperature

Vishay Semiconductors

°C/WDiode - - 0.57

Diode Leg

Fig. 2 - Typical Collector to Emitter Current Output Characteristics

Revision: 02-Aug-12

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

200

= 125 °C

T

J

160

120

TJ = 25 °C

80

40

- Forward Current (A)

F

I

0

0

4.02.01.0 3.0 5.0

VF - Forward Voltage Drop Characteristics (V)

Fig. 4 - Typical Diode Forward Voltage Drop Characteristics

of IGBT

3

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

= 150 °C

T

J

7.0 8.06.0

Document Number: 93990