C&H Technology VS-GT175DA120U User Manual

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Suite 108
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www.vishay.com

SOT-227

Insulated Gate Bipolar Transistor

(Trench IGBT), 175 A

PRODUCT SUMMARY

V

CES

I

DC 175 A at 90 °C

C

V

typical at 100 A, 25 °C 1.73 V

CE(on)

Note

(1)

Maximum collector current admitted is 100 A, to not exceed the
maximum temperature of terminals

1200 V

(1)

VS-GT175DA120U

Vishay Semiconductors

FEATURES

• Trench IGBT technology with positive
temperature coefficient

•Square RBSOA

• 10 μs short circuit capability

•HEXFRED
recovery

•TJ maximum = 150 °C

• Fully isolated package

• Very low internal inductance ( 5 nH typical)

• Industry standard outline

• UL approved file E78996

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

BENEFITS

• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating

• Easy to assemble and parallel

• Direct mounting to heatsink

• Plug-in compatible with other SOT-227 packages

• Speed 4 kHz to 30 kHz

• Very low V

• Low EMI, requires less snubbing

®

antiparallel diodes with ultrasoft reverse

CE(on)

Note

(1)

Revision: 02-Aug-12

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Gate to emitter voltage V

Power dissipation, IGBT P

Power dissipation, diode P

Isolation voltage V

Maximum collector current admitted is 100 A, to do not exceed the maximum temperature of terminals

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CES

C

CM

LM

ISOL

TC = 25 °C 288

(1)

T

= 90 °C 175

C

TC = 25 °C 54

F

T

= 90 °C 32

C

GE

TC = 25 °C 1087

D

D

= 90 °C 522

T

C

TC = 25 °C 219

T

= 90 °C 105

C

Any terminal to case, t = 1 min 2500 V

1

, [e-mail], [e-mail]

1200 V

450

450

± 20 V

Document Number: 93990

A

W

VS-GT175DA120U

www.vishay.com

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Collector to emitter voltage V

Gate threshold voltage V

Temperature coefficient of threshold
voltage

V

GE(th)

Collector to emitter leakage current I

Forward voltage drop, diode V

Gate to emitter leakage current I

BR(CES)

CE(on)

GE(th)

CES

FM

GES

VGE = 0 V, IC = 250 μA 1200 - -

VGE = 15 V, IC = 75 A - 1.73 2.1

V

= 15 V, IC = 75 A, TJ = 125 °C - 1.98 2.2

GE

V

= 15 V, IC = 75 A, TJ = 150 °C - 2.05 -

GE

VCE = VGE, IC = 250 μA - 5 -

V

= VGE, IC = 7.5 mA 4.9 5.9 7.9

CE

V

= VGE, IC = 250 μA, TJ = 125 °C - 2.9 -

CE

/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 17.6 - mV/°C

VGE = 0 V, VCE = 1200 V - 0.9 100 μA

V

= 0 V, VCE = 1200 V, TJ = 125 °C - 0.85 10

GE

= 0 V, VCE = 1200 V, TJ = 150 °C - 4 20

V

GE

IF = 40 A, VGE = 0 V - 3.12 3.44

= 40 A, VGE = 0 V, TJ = 125 °C - 3.15 3.47

F

I

= 40 A, VGE = 0 V, TJ = 150 °C - 3.25 -

F

VGE = ± 20 V - - ± 200 nA

Vishay Semiconductors

V

mA

VI

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Reverse bias safe operating area RBSOA

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Short circuit safe operating area SCSOA

Revision: 02-Aug-12

For technical questions within your region: [e-mail]

ge

gc

on

off

tot

d(on)

r

d(off)

f

on

off

tot

d(on)

r

d(off)

f

rr

rr

rr

rr

g

IC = 150 A (tp < 400 μs, D < 2 %),
V

= 600 V, VGE = 15 V

CC

IC = 100 A, VCC = 7200 V,

= 15 V, Rg = 5 

V

GE

L = 500 μH, T

= 25 °C

J

Energy losses
include tail
and diode
recovery
Diode used

IC = 100 A, VCC = 7200 V,
V

= 15 V, Rg = 5 

GE

L = 500 μH, T

T

= 150 °C, IC = 450 A, Rg = 22 

J

= 15 V to 0 V, VCC = 900 V,

V

GE

V

= 1200 V, L = 500 μH

P

= 125 °C

J

HFA16PB120

IF = 50 A, dIF/dt = 200 A/μs, VR = 400 V

rr

IF = 50 A, dIF/dt = 200 A/μs,
V

= 400 V, TJ = 125 °C

rr

R

= 150 °C, Rg = 22 ,

T

J

= 15 V to 0 V, VCC = 900 V,

V

GE

V

= 1200 V

p

2

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- 830 -

- 180 -

- 380 -

-4.03-

-6.9-

- 10.93 -

- 310 -

-65-

- 325 -

- 170 -

-5.07-

- 10.59 -

- 15.66 -

- 325 -

-80-

- 330 -

- 235 -

Fullsquare

- 164 - ns

-12- A

- 994 - nC

- 230 - ns

- 16.5 - A

- 1864 - nC

10 μs

Document Number: 93990

nCGate to emitter charge (turn-on) Q

mJTurn-off switching loss E

ns

mJTurn-off switching loss E

ns

VS-GT175DA120U

Allowable Case Temperature (°C)

IC - Continuous Collector Current (A)

0 40 80 120 200160 240 280 320

0

160

100

120

140

20

40

60

80

DC

V

CE -

Collector-to-Emitter Voltage (V)

I

C

-

Collector to Emitter Current (A)

04.00.5 1.0 1.5 2.0 2.5 3.0 3.5

0

300

100

200

275

75

175

250

50

150

225

25

125

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

VGE = 15 V

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THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Maximum junction and storage temperature range T

Junction to case thermal resistance

IGBT

Case to sink thermal resistance, flat, greased surface R

J

R

, T

thJC

thCS

Stg

Mounting torque, on terminals and heatsink - - 1.3 Nm

Weight -30- g

Case style SOT-227

Fig. 1 - Maximum DC IGBT Collector Current vs.

Case Temperature

- 40 - 150 °C

- - 0.115

-0.05-

160

140

120

100

80

60

40

20

Allowable Case Temperature (°C)

0

0 10 20 30 40 50 60 70 80

IF - Continuous Forward Current (A)

Fig. 3 - Maximum Allowable Forward Current vs. Case Temperature

Vishay Semiconductors

°C/WDiode - - 0.57

Diode Leg

Fig. 2 - Typical Collector to Emitter Current Output Characteristics

Revision: 02-Aug-12

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200

= 125 °C

T

J

160

120

TJ = 25 °C

80

40

- Forward Current (A)

F

I

0

0

4.02.01.0 3.0 5.0

VF - Forward Voltage Drop Characteristics (V)

Fig. 4 - Typical Diode Forward Voltage Drop Characteristics

of IGBT

3

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= 150 °C

T

J

7.0 8.06.0

Document Number: 93990

140

V

CES -

Collector-to-Emitter Voltage (V)

I

CES

-

Collector Current (A)

0 1200200 400 600 800 1000

0.0001

100

1

0.1

0.01

0.001

10

TJ = 25 °C

TJ = 125 °C

TJ = 150 °C

V

GE(th)

Threshold Voltage (V)

IC (mA)

3.5

4

4.5

5

5.5

6

2

2.5

3

0.20 0.40 0.60 0.80 1.00

TJ = 25 °C

T

J

= 125 °C

TJ - Junction Temperature (°C)

V

CE

-

Collector-to-Emitter Current (A)

200

160

40 80 12060 100 140

0.8

1.2

1.6

2.2

2.4

1.0

1.4

1.8

2.0

IC = 100 A

I

C

= 80 A

I

C

= 60 A

I

C

= 40 A

IC - Collector Current (A)

Switching Energy (mJ)

4

6

8

10

12

0

2

10 20 30 40 50 60 70 80 90 100 110 120

E

on

E

off

IC - Collector Current (A)

Switching Time (μs)

0.1

1

0.01
0 20 40 60 80 100 120

t

d(on)

t

d(off)

t

r

t

f

120

100

VS-GT175DA120U

www.vishay.com

80

60

40

TJ = 150 °C

TJ = 125 °C

Vishay Semiconductors

Collector to Emitter Current (A)

-

C

I

20

0

4.5

V

GE -

6.55.55.0 6.0 7.0

Gate-to-Emitter Voltage (V)

TJ = 25 °C

8.0 8.5 9.07.5

Fig. 5 - Typical IGBT Transfer Characteristics

Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current

Fig. 8 - Typical IGBT Collector to Emitter Voltage vs.

Junction Temperature, V

Fig. 9 - Typical IGBT Energy Loss vs. I

TJ = 125 °C, L = 500 μH, VCC = 600 V, Rg = 5 , VGE = 15 V

= 15 V

GE

C

Diode used: HFA16PB120

Fig. 7 - Typical IGBT Threshold Voltage

Revision: 02-Aug-12

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Fig. 10 - Typical IGBT Switching Time vs. I

TJ = 125 °C, L = 500 μH, VCC = 600 V, Rg = 5 , VGE = 15 V

Diode used: HFA16PB120

4

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C

Document Number: 93990

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I

rr

(A)

dIF/dt (A/μs)

100 1000

0

45

25

35

40

20

30

10

15

5

TJ = 25 °C

TJ = 125 °C

VS-GT175DA120U

Vishay Semiconductors

40

30

20

10

Energy Losses (mJ)

0

0 10 20 30 40 50

E

on

E

off

Rg (Ω)

TJ = 125 °C, IC = 75 A, L = 500 μH, VCC = 600 V, VGE = 15 V

Fig. 11 - Typical IGBT Energy Loss vs. R

g

Diode used: HFA16PB120

10

t

d(on)

1

0.1

t

d(off)

t

r

t

f

310

290

270

250

230

210

(ns)

190

rr

t

170

150

130

110

90

TJ = 25 °C

100 1000

TJ = 125 °C

dIF/dt (A/μs)

Fig. 13 - Typical Reverse Recovery Time vs. dI

at I

= 50 A, VR = 400 V

F

3000

2500

TJ = 125 °C

2000

1500

(nC)

rr

Q

1000

TJ = 25 °C

/dt, of Diode,

F

Switching Time (μs)

0.01
0 10 20 30 40 50 60

Fig. 12 - Typical IGBT Switching Time vs. R

TJ = 125 °C, L = 500 μH, VCC = 600 V, IC = 75 A, VGE = 15 V

Diode used: HFA16PB120

Revision: 02-Aug-12

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

500

0

100 1000

Rg (Ω)

g

Fig. 15 - Typical Reverse Recovery Current vs. dI

at I

= 50 A, VR = 400 V

F

Fig. 14 - Typical Stored Charge vs. dI

/dt, of Diode,

F

dIF/dt (A/μs)

at I

= 50 A, VR = 400 V

F

5

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

/dt of Diode,

F

Document Number: 93990

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I

C

(A)

VCE (V)

1 10 100 1000 10 000

0.01

0.1

1

1000

10

100

1

0.1

0.75

0.50

0.25

Thermal Impedance

-

thJC

Junction to Case (°C/W)

Z

0.05

0.02
DC

Notes:

1. Duty factor D = t

0.1

0.01

2. Peak TJ = PDM x Z

0.001

0.0001 0.001 0.01 0.1 1 10

P

VS-GT175DA120U

Vishay Semiconductors

DM

t

1

t

2

1/t2

+ T

thJC

C

Fig. 16 - Maximum Thermal Impedance Z

1

0.75

0.50

0.25

0.1

0.1

0.05

0.02

0.01

Thermal Impedance

-

thJC

Junction to Case (°C/W)

Z

0.001

DC

0.0001 0.001 0.01 0.1 1 10

Characteristics (IGBT)

thJC

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

P

DM

Rectangular Pulse Duration (s)

Rectangular Pulse Duration (s)

Fig. 17 - Maximum Thermal Impedance Z

Characteristics (Diode)

thJC

t

1

t

2

1/t2

+ T

thJC

C

Revision: 02-Aug-12

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Fig. 18 - IGBT Rverse Bias SOA, T

6

= 150 °C, VGE = 15 V

J

Document Number: 93990

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VS-GT175DA120U

L

Diode clamp/

D.U.T.

D.U.T./

driver

- 5 V

+

-

R

g

V

CC

+

-

t = 5 µs

t

d(on)

t

f

t

r

90 %

t

d(off)

10 %

90 %

10 %

5 %

V

C

I

C

E

on

E

off

Ets = (Eon + E

off

)

1

2

3

www.vishay.com

L

V

*

50 V

C

1000 V

1

* Driver same type as D.U.T.; VC = 80 % of V
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id

Fig. 19a - Clamped Inductive Load Test Circuit Fig. 19b - Pulsed Collector Current Test Circuit

D.U.T.

2

ce(max)

Vishay Semiconductors

V

CC

R =

I

CM

D.U.T.

R

g

+

-

V

CC

Fig. 20a - Switching Loss Test Circuit

Fig. 20b - Switching Loss Waveforms Test Circuit

Revision: 02-Aug-12

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7

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Document Number: 93990

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1

- Insulated Gate Bipolar Transistor (IGBT)

- Vishay Semiconductors product

2

- Trench IGBT technology

3

- Current rating (175 = 175 A)

4

- Circuit configuration (D = Single switch with antiparallel diode)

5

- Package indicator (A = SOT-227)

6

- Voltage rating (120 = 1200 V)

8

7

- Speed/type (U = Ultrafast)

Device code

5

1

32 4 6 7 8

GVS- T 175 D A 120 U

ORDERING INFORMATION TABLE

VS-GT175DA120U

Vishay Semiconductors

CIRCUIT CONFIGURATION

CIRCUIT

2 separate diodes,
parallel pin-out

Dimensions www.vishay.com/doc?95423

Packaging information www.vishay.com/doc?95425

CONFIGURATION CODE

CIRCUIT

D

3 (C)

2 (G)

1, 4 (E)

LINKS TO RELATED DOCUMENTS

CIRCUIT DRAWING

Lead Assignment

43

1

2

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Document Number: 93990

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38.30 (1.508)

37.80 (1.488)

-A-

12.50 (0.492)

13.00 (0.512)

7.45 (0.293)

7.60 (0.299)

Ø 4.10 (0.161)
Ø 4.30 (0.169)

30.50 (1.200)

29.80 (1.173)

31.50 (1.240)

32.10 (1.264)

14.90 (0.587)

15.20 (0.598)

6.25 (0.246)

6.50 (0.256)

25.70 (1.012)

24.70 (0.972)

2.10 (0.083)

2.20 (0.087)

-B-

R full

2.20 (0.087)

1.90 (0.075)

8.30 (0.327)

7.70 (0.303)

4 x

4.10 (0.161)

4.50 (0.177)

-C-

0.13 (0.005)

12.30 (0.484)

11.70 (0.460)

25.00 (0.984)

25.50 (1.004)

M M M

0.25 (0.010)

CA B

4 x M4 nuts

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay Semiconductors

SOT-227 Generation II

Note

• Controlling dimension: millimeter

Revision: 02-Aug-12

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1

Document Number: 95423

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Legal Disclaimer Notice

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Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Revision: 12-Mar-12

1

Document Number: 91000