C&H Technology VS-GT140DA60U User Manual

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Suite 108
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SOT-227

Insulated Gate Bipolar Transistor

(Trench IGBT), 140 A

PRODUCT SUMMARY

V

CES

DC 140 A at 90 °C

I

C

V

typical at 100 A, 25 °C 1.72 V

CE(on)

DC 71 A at 90 °C

I

F

Note

(1)

Maximum collector current admitted is 100 A, to do not exceed
the maximum temperature of terminals

600 V

(1)

VS-GT140DA60U

Vishay Semiconductors

FEATURES

• Trench IGBT technology with positive
temperature coefficient

•Square RBSOA

• 3 μs short circuit capability

®

•FRED Pt
recovery

•TJ maximum = 175 °C

• Fully isolated package

• Very low internal inductance ( 5 nH typical)

• Industry standard outline

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

BENEFITS

• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating

• Easy to assemble and parallel

• Direct mounting to heatsink

• Plug-in compatible with other SOT-227 packages

• Speed 4 kHz to 30 kHz

• Lower conduction losses and switching losses

• Low EMI, requires less snubbing

antiparallel diodes with ultrasoft reverse

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Gate-to-emitter voltage V

Power dissipation, IGBT P

Power dissipation, diode P

Isolation voltage V

Note

(1)

Maximum collector current admitted is 100 A, to do not exceed the maximum temperature of terminals

Revision: 20-Sep-12

CES

TC = 25 °C 200

(1)

C

CM

LM

F

GE

D

D

ISOL

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= 90 °C 140

T

C

TC = 25 °C 104

= 90 °C 71

T

C

TC = 25 °C 652

= 90 °C 370

T

C

TC = 25 °C 238

= 90 °C 135

T

C

Any terminal to case, t = 1 min 2500 V

1

, [e-mail], [e-mail]

600 V

350

350

± 20 V

Document Number: 94772

A

W

VS-GT140DA60U

www.vishay.com

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown
voltage

Collector to emitter voltage V

Gate threshold voltage V

Temperature coefficient of threshold
voltage

Collector to emitter leakage current I

Forward voltage drop, diode V

Gate to emitter leakage current I

V

BR(CES)

VGE = 0 V, IC = 250 μA 600 - -

VGE = 15 V, IC = 100 A - 1.7 2.0

V

CE(on)

GE(th)

/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 16.8 - mV/°C

V

GE(th)

= 15 V, IC = 100 A, TJ = 125 °C - 2.0 2.2

GE

V

= 15 V, IC = 100 A, TJ = 175°C - 2.15 -

GE

VCE = VGE, IC = 250 μA 3.5 4.6 6.5

V

= VGE, IC = 250 μA, TJ = 125 °C - 2.65 -

CE

VGE = 0 V, VCE = 600 V - 0.6 100 μA

V

CES

= 0 V, VCE = 600 V, TJ = 125 °C - 0.15 3

GE

= 0 V, VCE = 600 V, TJ = 175 °C - 8 -

V

GE

IF = 40 A, VGE = 0 V - 1.74 2.2

FM

GES

= 40 A, VGE = 0 V, TJ = 125 °C - 1.35 1.74

F

I

= 40 A, VGE = 0 V, TJ = 150 °C - 1.2 -

F

VGE = ± 20 V - - ± 200 nA

Vishay Semiconductors

V

mA

VI

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

on

off

tot

d(on)

r

d(off)

f

on

off

tot

d(on)

r

d(off)

f

Reverse bias safe operating area RBSOA

Diode reverse recovery time t

Diode reverse recovery current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

rr

rr

rr

rr

rr

rr

Short circuit safe operating area SCSOA

IC = 100 A, VCC = 360 V,
V

= 15 V, Rg = 5 

GE

L = 500 μH, T

= 25 °C

J

Energy losses
include tail and
diode
recovery.
Diode used

IC = 100 A, VCC = 360 V,

= 15 V, Rg = 5 

V

GE

L = 500 μH, T

T

= 175 °C, IC = 350 A, Rg = 22 

J

= 15 V to 0 V, VCC = 400 V,

V

GE

= 600 V, L = 500 μH

V

P

= 125 °C

J

60APH06

IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V

IF = 50 A, dIF/dt = 200 A/μs,
V

= 200 V, TJ = 125 °C

R

= 175 °C, Rg = 22 VGE = 15 V to 0 V,

T

J

= 400 V, VP = 600 V

V

CC

-0.43-

-1.50-

mJTurn-off switching loss E

-1.93-

- 130 -

-50-

- 127 -

ns

-82-

-0.43-

-2.12-

mJTurn-off switching loss E

-2.55-

- 130 -

-52-

- 130 -

ns

- 100 -

Fullsquare

-72-ns

-5.5- A

- 200 - nC

- 144 - ns

-13- A

- 930 - nC

3μs

Revision: 20-Sep-12

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-GT140DA60U

IF - Continuous Forward Current (A)

Allowable Case Temperature (°C)

0

20

40

60

80

100

120

140

160

180

0 20406080100120

www.vishay.com

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

R

J

R

, T

thJC

thCS

Stg

Maximum junction and storage temperature T

Junction to case thermal resistance

IGBT

Diode - - 0.63

Case to sink thermal resistance, flat greased
surface

Mounting torque, on termianls and heatsink T - - 1.3 Nm

Weight -30-g

Case style SOT-227

180

160

140

120

100

80

60

40

20

DC

- 40 - 175 °C

- - 0.23

-0.1-

Vishay Semiconductors

°C/W

0

Allowable Case Temperature (°C)

0 20 40 60 80 100 120 140 160 180 200 220

IC - Continuous Collector Current (A)

Fig. 1 - Maximum DC IGBT Collector Current

300

VGE = 15 V

250

200

150

TJ = 25 °C

100

50

Collector-to-Emitter Current (A)

-

C

I

0

0.0 1.0 2.0 3.0 4.0

V

Collector-to-Emitter Voltage (V)

CE -

Fig. 2 - Typical Collector to Emitter Current

Output Characteristics of IGBT

Revision: 20-Sep-12

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Fig. 3 - Maximum Allowable Forward Current

vs. Case Temperature

TJ = 125 °C

= 175 °C

T

J

Forward Current (A)

-

F

I

200

160

120

80

40

vs. Case Temperature, Diode Leg

TJ = 175 °C

TJ = 25 °C

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VF - Forward Voltage Drop Characteristics (V)

Fig. 4 - Typical Diode Forward Voltage Drop Characteristics

3

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

= 125 °C

T

J

Document Number: 94772

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V

GE -

Gate-to-Emitter Voltage (V)

I

C

-

Collector-to-Emitter Current (A)

0

20

40

60

80

100

120

140

3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5

TJ = 125 °C

TJ = 175 °C

T

J

= 25 °C

V

CES -

Collector-to-Emitter Voltage (V)

I

CES

-

Collector Current (mA)

0.00001

0.0001

0.001

0.01

0.1

1

10

0 100 200 300 400 500 600

TJ = 25 °C

TJ = 125 °C

T

J

= 175 °C

TJ - Junction Temperature (°C)

V

CE

-

Collector-to-Emitter Voltage (V)

1

1.2

1.4

1.6

1.8

2

2.2

2.4

0 20 40 60 80 100 120 140 160 180

IC = 100 A

IC = 75 A

IC = 50 A

IC = 25 A

IC - Collector Current (A)

Switching Energy (mJ)

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

10 20 30 40 50 60 70 80 90 100 110 120

E

on

E

off

VS-GT140DA60U

Vishay Semiconductors

Fig. 5 - Typical IGBT Transfer Characteristics

Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current

5

4.5

4

3.5

3

2.5

Threshold Voltage (V)

-

Revision: 20-Sep-12

2

1.5

GETH

V

1

0.20 0.40 0.60 0.80 1.00

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TJ = 25 °C

TJ = 125 °C

Fig. 7 - Typical IGBT Threshold Voltage

Fig. 8 - Typical IGBT Collector to Emitter Voltage

vs. Junction Temperature, V

Fig. 9 - Typical IGBT Energy Losses vs. I

TJ = 125 °C, L = 500 μH, VCC = 360 V,

R

= 5 , VGE = 15 V, Diode used: 60APH06

g

1

t

d(off)

0.1

t

f

t

d(on)

Switching Time (μs)

t

IC (mA)

0.01

4

r

0 20406080100120

IC - Collector Current (A)

Fig. 10 - Typical IGBT Switching Time vs. I

TJ = 125 °C, L = 500 μH, VCC = 360 V,

R

= 5 , VGE = 15 V, Diode used: 60APH06

g

, [e-mail], [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

= 15 V

GE

C

C

Document Number: 94772

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Rg (Ω)

Energy Losses (mJ)

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

5.5

6

01020304050

E

on

E

off

dIF/dt (A/μs)

I

RR

(A)

0

5

10

15

20

25

30

35

100 1000

25 °C

125 °C

IF = 50 A

V

R

= 200 V

VS-GT140DA60U

Vishay Semiconductors

Fig. 11 - Typical IGBT Energy Loss vs. R

TJ = 125 °C, IC = 100 A, L = 500 μH,

V

= 360 V, VGE = 15 V, Diode used: 60APH06

CC

1

0.1

Switching Time (μs)

t

t

t

t

d(on)

d(off)

r

f

2000

1500

125 °C

1000

(nC)

rr

Q

500

25 °C

0

100 1000

V

= 200 V

R

IF = 50 A

dIF/dt (A/μs)

g

Fig. 14 - Typical Stored Charge vs. dI

/dt of Diode

F

0.01
0 102030405060

Fig. 12 - Typical IGBT Switching Time vs. R

TJ = 125 °C, L = 500 μH, VCC = 360 V,

I

= 100 A, VGE = 15 V, Diode used: 60APH06

C

200

180

160

140

120

(ns)

rr

t

100

80

60

40

100 1000

Fig. 13 - Typical Reverse RecoveryTime vs. dI

Revision: 20-Sep-12

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125 °C

25 °C

Rg (Ω)

Fig. 15 - Typical Reverse Recovery Current vs. dI

dIF/dt (A/μs)

V

= 200 V

R

IF = 50 A

g

/dt of Diode

F

5

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

/dt of Diode

F

Document Number: 94772

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t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance

Junction to Case (°C/W)

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10

.

.

P

DM

t

1

t

2

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

D = 0.75
D = 0.50
D = 0.25
D = 0.1
D = 0.05
D = 0.02
DC

I

C

(A)

VCE (V)

1 10 100 1000

0.01

0.1

1

1000

10

100

Vishay Semiconductors

1

0.1

P

D = 0.75

DM

D = 0.50

0.01

- Thermal Impedance

Junction to Case (°C/W)

thJC

Z

D = 0.25
D = 0.1
D = 0.05
D = 0.02
DC

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

1/t2

0.001

0.0001 0.001 0.01 0.1 1 10

t1 - Rectangular Pulse Duration (s)

Fig. 16 - Maximum Thermal Impedance Z

Characteristics, IGBT

thJC

VS-GT140DA60U

t

1

t

2

.

+ T

thJC

C

.

Fig. 17 - Maximum Thermal Impedance Z

Revision: 20-Sep-12

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Fig. 18 - IGBT Reverse BIAS SOA, T

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6

thJC

= 175 °C, VGE = 15 V

J

, [e-mail], [e-mail]

Characteristics, Diode

Document Number: 94772

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L

Diode clamp/

D.U.T.

D.U.T./

driver

- 5 V

+

-

R

g

V

CC

+

-

t = 5 µs

t

d(on)

t

f

t

r

90 %

t

d(off)

10 %

90 %

10 %

5 %

V

C

I

C

E

on

E

off

Ets = (Eon + E

off

)

1

2

3

L

V

*

50 V

1000 V

1

* Driver same type as D.U.T.; VC = 80 % of V
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id

19a - Clamped Inductive Load Test Circuit 19b - Pulsed Collector Current Test Circuit

C

ce(max)

D.U.T.

VS-GT140DA60U

Vishay Semiconductors

V

CC

R =

I

CM

+

-

D.U.T.

2

R

g

V

CC

20a - Switching Loss Test Circuit

20b - Switching Loss Waveforms Test Circuit

Revision: 20-Sep-12

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1

- Insulated Gate Bipolar Transistor (IGBT)

- Vishay Semiconductors product

2

- T = Trench IGBT Technology

3

- Current rating (140 = 140 A)

4

- Circuit configuration (D = Single switch with antiparallel diode)

5

- Package indicator (A = SOT-227)

6

- Voltage rating (60 = 600 V)

8

7

- Speed/type (U = Ultrafast IGBT)

Device code

5

1

32 4 6 7 8

GVS- T 140 D A 60 U

ORDERING INFORMATION TABLE

VS-GT140DA60U

Vishay Semiconductors

CIRCUIT CONFIGURATION

CIRCUIT

2 separate diodes,
parallel pin-out

Dimensions www.vishay.com/doc?95423

Packaging information www.vishay.com/doc?95425

CONFIGURATION CODE

CIRCUIT

D

3 (C)

2 (G)

1, 4 (E)

LINKS TO RELATED DOCUMENTS

CIRCUIT DRAWING

Lead Assignment

43

1

2

Revision: 20-Sep-12

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38.30 (1.508)

37.80 (1.488)

-A-

12.50 (0.492)

13.00 (0.512)

7.45 (0.293)

7.60 (0.299)

Ø 4.10 (0.161)
Ø 4.30 (0.169)

30.50 (1.200)

29.80 (1.173)

31.50 (1.240)

32.10 (1.264)

14.90 (0.587)

15.20 (0.598)

6.25 (0.246)

6.50 (0.256)

25.70 (1.012)

24.70 (0.972)

2.10 (0.083)

2.20 (0.087)

-B-

R full

2.20 (0.087)

1.90 (0.075)

8.30 (0.327)

7.70 (0.303)

4 x

4.10 (0.161)

4.50 (0.177)

-C-

0.13 (0.005)

12.30 (0.484)

11.70 (0.460)

25.00 (0.984)

25.50 (1.004)

M M M

0.25 (0.010)

CA B

4 x M4 nuts

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay Semiconductors

SOT-227 Generation II

Note

• Controlling dimension: millimeter

Revision: 02-Aug-12

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Legal Disclaimer Notice

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Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

1

Document Number: 91000