C&H Technology VS-GT140DA60U User Manual

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www.vishay.com

SOT-227

Insulated Gate Bipolar Transistor

(Trench IGBT), 140 A

PRODUCT SUMMARY

V

CES

DC 140 A at 90 °C

I

C

V

typical at 100 A, 25 °C 1.72 V

CE(on)

DC 71 A at 90 °C

I

F

Note

(1)

Maximum collector current admitted is 100 A, to do not exceed
the maximum temperature of terminals

600 V

(1)

VS-GT140DA60U

Vishay Semiconductors

FEATURES

• Trench IGBT technology with positive
temperature coefficient

•Square RBSOA

• 3 μs short circuit capability

®

•FRED Pt
recovery

•TJ maximum = 175 °C

• Fully isolated package

• Very low internal inductance ( 5 nH typical)

• Industry standard outline

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

BENEFITS

• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating

• Easy to assemble and parallel

• Direct mounting to heatsink

• Plug-in compatible with other SOT-227 packages

• Speed 4 kHz to 30 kHz

• Lower conduction losses and switching losses

• Low EMI, requires less snubbing

antiparallel diodes with ultrasoft reverse

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Gate-to-emitter voltage V

Power dissipation, IGBT P

Power dissipation, diode P

Isolation voltage V

Note

(1)

Maximum collector current admitted is 100 A, to do not exceed the maximum temperature of terminals

Revision: 20-Sep-12

CES

TC = 25 °C 200

(1)

C

CM

LM

F

GE

D

D

ISOL

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

= 90 °C 140

T

C

TC = 25 °C 104

= 90 °C 71

T

C

TC = 25 °C 652

= 90 °C 370

T

C

TC = 25 °C 238

= 90 °C 135

T

C

Any terminal to case, t = 1 min 2500 V

1

, [e-mail], [e-mail]

600 V

350

350

± 20 V

Document Number: 94772

A

W

VS-GT140DA60U

www.vishay.com

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown
voltage

Collector to emitter voltage V

Gate threshold voltage V

Temperature coefficient of threshold
voltage

Collector to emitter leakage current I

Forward voltage drop, diode V

Gate to emitter leakage current I

V

BR(CES)

VGE = 0 V, IC = 250 μA 600 - -

VGE = 15 V, IC = 100 A - 1.7 2.0

V

CE(on)

GE(th)

/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 16.8 - mV/°C

V

GE(th)

= 15 V, IC = 100 A, TJ = 125 °C - 2.0 2.2

GE

V

= 15 V, IC = 100 A, TJ = 175°C - 2.15 -

GE

VCE = VGE, IC = 250 μA 3.5 4.6 6.5

V

= VGE, IC = 250 μA, TJ = 125 °C - 2.65 -

CE

VGE = 0 V, VCE = 600 V - 0.6 100 μA

V

CES

= 0 V, VCE = 600 V, TJ = 125 °C - 0.15 3

GE

= 0 V, VCE = 600 V, TJ = 175 °C - 8 -

V

GE

IF = 40 A, VGE = 0 V - 1.74 2.2

FM

GES

= 40 A, VGE = 0 V, TJ = 125 °C - 1.35 1.74

F

I

= 40 A, VGE = 0 V, TJ = 150 °C - 1.2 -

F

VGE = ± 20 V - - ± 200 nA

Vishay Semiconductors

V

mA

VI

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

on

off

tot

d(on)

r

d(off)

f

on

off

tot

d(on)

r

d(off)

f

Reverse bias safe operating area RBSOA

Diode reverse recovery time t

Diode reverse recovery current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

rr

rr

rr

rr

rr

rr

Short circuit safe operating area SCSOA

IC = 100 A, VCC = 360 V,
V

= 15 V, Rg = 5 

GE

L = 500 μH, T

= 25 °C

J

Energy losses
include tail and
diode
recovery.
Diode used

IC = 100 A, VCC = 360 V,

= 15 V, Rg = 5 

V

GE

L = 500 μH, T

T

= 175 °C, IC = 350 A, Rg = 22 

J

= 15 V to 0 V, VCC = 400 V,

V

GE

= 600 V, L = 500 μH

V

P

= 125 °C

J

60APH06

IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V

IF = 50 A, dIF/dt = 200 A/μs,
V

= 200 V, TJ = 125 °C

R

= 175 °C, Rg = 22 VGE = 15 V to 0 V,

T

J

= 400 V, VP = 600 V

V

CC

-0.43-

-1.50-

mJTurn-off switching loss E

-1.93-

- 130 -

-50-

- 127 -

ns

-82-

-0.43-

-2.12-

mJTurn-off switching loss E

-2.55-

- 130 -

-52-

- 130 -

ns

- 100 -

Fullsquare

-72-ns

-5.5- A

- 200 - nC

- 144 - ns

-13- A

- 930 - nC

3μs

Revision: 20-Sep-12

For technical questions within your region: [e-mail]

2

, [e-mail], [e-mail]

Document Number: 94772

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-GT140DA60U

IF - Continuous Forward Current (A)

Allowable Case Temperature (°C)

0

20

40

60

80

100

120

140

160

180

0 20406080100120

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THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

R

J

R

, T

thJC

thCS

Stg

Maximum junction and storage temperature T

Junction to case thermal resistance

IGBT

Diode - - 0.63

Case to sink thermal resistance, flat greased
surface

Mounting torque, on termianls and heatsink T - - 1.3 Nm

Weight -30-g

Case style SOT-227

180

160

140

120

100

80

60

40

20

DC

- 40 - 175 °C

- - 0.23

-0.1-

Vishay Semiconductors

°C/W

0

Allowable Case Temperature (°C)

0 20 40 60 80 100 120 140 160 180 200 220

IC - Continuous Collector Current (A)

Fig. 1 - Maximum DC IGBT Collector Current

300

VGE = 15 V

250

200

150

TJ = 25 °C

100

50

Collector-to-Emitter Current (A)

-

C

I

0

0.0 1.0 2.0 3.0 4.0

V

Collector-to-Emitter Voltage (V)

CE -

Fig. 2 - Typical Collector to Emitter Current

Output Characteristics of IGBT

Revision: 20-Sep-12

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 3 - Maximum Allowable Forward Current

vs. Case Temperature

TJ = 125 °C

= 175 °C

T

J

Forward Current (A)

-

F

I

200

160

120

80

40

vs. Case Temperature, Diode Leg

TJ = 175 °C

TJ = 25 °C

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VF - Forward Voltage Drop Characteristics (V)

Fig. 4 - Typical Diode Forward Voltage Drop Characteristics

3

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

= 125 °C

T

J

Document Number: 94772