C&H Technology VS-GT100TP120N User Manual

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VS-GT100TP120N

INT-A-PAK

www.vishay.com

Vishay Semiconductors

Half Bridge IGBT Power Module, 1200 V, 100 A

FEATURES

•Low V

• 10 μs short circuit capability

•V

CE(sat)

• Maximum junction temperature 175 °C

• Low inductance case

• Fast and soft reverse recovery antiparallel FWD

• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

trench IGBT technology

CE(sat)

with positive temperature coefficient

PRODUCT SUMMARY

V

CES

at TC = 80 °C 100 A

I

C

(typical)

V

CE(on)

at I

= 100 A, 25 °C

C

1200 V

1.90 V

TYPICAL APPLICATIONS

• UPS (Uninterruptable Power Supply)

• Inverter for motor drive

• AC and DC servo drive amplifier

DESCRIPTION

Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Gate to emitter voltage V

Collector current I

Pulsed collector current I

Diode continuous forward current I

Diode maximum forward current I

Maximum power dissipation P

Short circuit withstand time t

RMS isolation voltage V

Note

(1)

Repetitive rating: Pulse width limited by maximum junction temperature.

CM

FM

CES

GES

C

F

SC

ISOL

TC = 25 °C 180

= 80 °C 100

T

C

(1)

(1)

D

tp = 1 ms 200

TC = 80 °C 100

tp = 1 ms 200

TJ = 175 °C 652 W

TC = 125 °C 10 μs

f = 50 Hz, t = 1 min 4000 V

1200

± 30

V

A

Revision: 06-Aug-12

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Document Number: 93800

VS-GT100TP120N

www.vishay.com

IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

(BR)CES

TJ = 25 °C 1200 - -

VGE = 15 V, IC = 100 A, TJ = 25 °C - 1.90 2.35

Gate to emitter threshold voltage V

Collector cut-off current I

Gate to emitter leakage current I

CE(sat)

GE(th)

CES

GES

V

= 15 V, IC = 100 A, TJ = 175 °C - 2.50 -

GE

VCE = VGE, IC = 5.0 mA, TJ = 25 °C 5.0 5.9 7.5

VCE = V

VGE = V

, VGE = 0 V, TJ = 25 °C - - 5.0 mA

CES

, VCE = 0 V, TJ = 25 °C - - 400 nA

GES

SWITCHING CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Input capacitance C

Reverse transfer capacitance C

SC data I

Stray inductance L

Module lead resistance, terminal to chip R

d(on)

r

d(off)

f

on

off

d(on)

r

d(off)

f

on

off

ies

oes

res

SC

CE

CC’+EE’

VCC = 600 V, IC = 100 A, Rg = 5.6 ,
V

= ± 15 V, TJ = 25 °C

GE

VCC = 600 V, IC = 100 A, Rg = 5.6 ,
V

= ± 15 V, TJ = 125 °C

GE

VGE = 0 V, VCE = 30 V, f = 1.0 MHz

tp  10 μs, VGE = 15 V, TJ = 125 °C,
V

= 900 V, V

CC

CEM

 1200 V

Vishay Semiconductors

VCollector to emitter saturation voltage V

- 187 -

-57-

- 180 -

- 149 -

-4.97-

-4.69-

- 189 -

-58-

- 187 -

- 220 -

-7.80-

-5.85-

- 12.8 -

-0.46-

-0.32-

- 890 - A

- - 30 nH

-0.75- m

ns

mJ

ns

mJ

nFOutput capacitance C

DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

= 25 °C - 1.82 2.20

T

Forward voltage V

Reverse recovery charge Q

F

rr

IF = 100 A

IF = 100 A, VR = 600 V,
R

Peak reverse recovery current I

Reverse recovery energy E

rr

rec

Revision: 06-Aug-12

For technical questions within your region: [e-mail]

= 5.6 

G

V

GE

2

= - 15 V

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

J

T

= 125 °C - 1.95 -

J

= 25 °C - 8.1 -

T

J

T

= 125 °C - 14.0 -

J

TJ = 25 °C - 81 -

T

= 125 °C - 98 -

J

TJ = 25 °C - 2.99 -

T

= 125 °C - 4.85 -

J

Document Number: 93800

V

μC

A

mJ

VS-GT100TP120N

0

25

50

75

100

125

150

175

200

0 0.5 1 1.5 2 2.5 3 3.5 4

I

C

(A)

VCE (V)

25 °C

175 °C

VGE = 15 V

0

25

50

75

100

125

150

175

200

456789101112

175 °C

25 °C

VCE = 50 V

VGE (V)

I

C

(A)

www.vishay.com

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Maximum junction temperature range T

Storage temperature range T

Junction to case

IGBT

per ½ module

Case to sink (Conductive grease applied) R

Mounting torque

Weight Weight of module - 150 - g

J

Stg

R

thJC

thCS

Power terminal screw: M5 2.5 to 5.0

Mounting screw: M6 3.0 to 5.0

Vishay Semiconductors

- - 175 °C

- 40 - 125 °C

- - 0.23

K/WDiode - - 0.36

-0.05-

Nm

Fig. 1 - IGBT Typical Output Characteristics

30

25

20

15

E (mJ)

10

E (mJ)

V

CC = 600 V

= 5.6 Ω

R

G

= ± 15 V

V

GE

= 125 °C

T

J

E

ON

E

5

0

0 50 100 150 200

OFF

IC (A)

Fig. 3 - IGBT Switching Loss vs. I

35

30

V

25

20

15

10

E

ON

CC = 600 V

= 100 A

I

C

= ± 15 V

V

GE

= 125 °C

T

J

C

Fig. 2 - IGBT Transfer Characteristics

Revision: 06-Aug-12

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5

0

0 102030405060

E

OFF

Rg (Ω)

Fig. 4 - IGBT Switching Loss vs. R

3

Document Number: 93800

G

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0.001

0.01

0.1

1

0.001

0.01 0.1

1

10

IGBT

t (s)

Z

thJC

(K/W)

VS-GT100TP120N

Vishay Semiconductors

250

(A)

C

I

200

150

100

RG = 5.6 Ω

50

0

0 350 700 1050 1400

= ± 15 V

V

GE

T

= 125 °C

J

Module

VCE (V)

Fig. 5 - RBSOA

(A)

F

I

Revision: 06-Aug-12

Fig. 6 - IGBT Transient Thermal Impedance

200

175

150

125

100

75

50

25

0

0 0.5 1 1.5 2 2.5 3

25 °C

125 °C

VF (V)

Fig. 7 - Diode Forward Characteristics Fig. 8 - Diode Switching Loss vs. I

4

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8

V

CC = 600 V

7

R

= 5.6 Ω

G

= - 15 V

V

GE

6

= 125 °C

T

J

5

E

E (mJ)

4

3

2

1

0

0 50 100 150 200

REC

IF (V)

Document Number: 93800

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F

www.vishay.com

0.01

0.1

1

0.001 0.01 0.1 1 10

t (s)

Z

thJC

(K/W)

Diode

1

6
7

3

2

5
4

VS-GT100TP120N

Vishay Semiconductors

6

5

E (mJ)

4

3

V

2

1

0

CC = 600 V

= 100 A

I

F

V

= - 15 V

GE

T

= 125 °C

J

0 102030405060

Fig. 9 - Diode Switching Loss vs. R

E

REC

R

(Ω)

G

G

Fig. 10 - Diode Transient Thermal Impedance

CIRCUIT CONFIGURATION

Revision: 06-Aug-12

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23.5

30.58

6.92

13.64 13 13.64

18.97 18.98

22.2

31.4

7.2

40

80

94.1

23 23

17

123

6

4.5 17

34

12.5

4.5

754

3 - M5.0

2 - Ø 6.4

DIMENSIONS in millimeters

VS-GT100TP120N

Vishay Semiconductors

Revision: 06-Aug-12

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Document Number: 93800

Legal Disclaimer Notice

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Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Revision: 12-Mar-12

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Document Number: 91000