C&H Technology VS-GT100TP120N User Manual

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VS-GT100TP120N
INT-A-PAK
www.vishay.com
Vishay Semiconductors
Half Bridge IGBT Power Module, 1200 V, 100 A
FEATURES
•Low V
• 10 μs short circuit capability
•V
CE(sat)
• Maximum junction temperature 175 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper Bonding) technology
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
trench IGBT technology
CE(sat)
with positive temperature coefficient
PRODUCT SUMMARY
V
CES
at TC = 80 °C 100 A
I
C
(typical)
V
CE(on)
at I
= 100 A, 25 °C
C
1200 V
1.90 V
TYPICAL APPLICATIONS
• UPS (Uninterruptable Power Supply)
• Inverter for motor drive
• AC and DC servo drive amplifier
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as general inverters and UPS.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
Gate to emitter voltage V
Collector current I
Pulsed collector current I
Diode continuous forward current I
Diode maximum forward current I
Maximum power dissipation P
Short circuit withstand time t
RMS isolation voltage V
Note
(1)
Repetitive rating: Pulse width limited by maximum junction temperature.
CM
FM
CES
GES
C
F
SC
ISOL
TC = 25 °C 180
= 80 °C 100
T
C
(1)
(1)
D
tp = 1 ms 200
TC = 80 °C 100
tp = 1 ms 200
TJ = 175 °C 652 W
TC = 125 °C 10 μs
f = 50 Hz, t = 1 min 4000 V
1200
± 30
V
A
Revision: 06-Aug-12
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
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Document Number: 93800
VS-GT100TP120N
www.vishay.com
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
TJ = 25 °C 1200 - -
VGE = 15 V, IC = 100 A, TJ = 25 °C - 1.90 2.35
Gate to emitter threshold voltage V
Collector cut-off current I
Gate to emitter leakage current I
CE(sat)
GE(th)
CES
GES
V
= 15 V, IC = 100 A, TJ = 175 °C - 2.50 -
GE
VCE = VGE, IC = 5.0 mA, TJ = 25 °C 5.0 5.9 7.5
VCE = V
VGE = V
, VGE = 0 V, TJ = 25 °C - - 5.0 mA
CES
, VCE = 0 V, TJ = 25 °C - - 400 nA
GES
SWITCHING CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on switching loss E
Turn-off switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Turn-on switching loss E
Turn-off switching loss E
Input capacitance C
Reverse transfer capacitance C
SC data I
Stray inductance L
Module lead resistance, terminal to chip R
d(on)
r
d(off)
f
on
off
d(on)
r
d(off)
f
on
off
ies
oes
res
SC
CE
CC’+EE’
VCC = 600 V, IC = 100 A, Rg = 5.6 , V
= ± 15 V, TJ = 25 °C
GE
VCC = 600 V, IC = 100 A, Rg = 5.6 , V
= ± 15 V, TJ = 125 °C
GE
VGE = 0 V, VCE = 30 V, f = 1.0 MHz
tp 10 μs, VGE = 15 V, TJ = 125 °C, V
= 900 V, V
CC
CEM
1200 V
Vishay Semiconductors
VCollector to emitter saturation voltage V
- 187 -
-57-
- 180 -
- 149 -
-4.97-
-4.69-
- 189 -
-58-
- 187 -
- 220 -
-7.80-
-5.85-
- 12.8 -
-0.46-
-0.32-
- 890 - A
- - 30 nH
-0.75- m
ns
mJ
ns
mJ
nFOutput capacitance C
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
= 25 °C - 1.82 2.20
T
Forward voltage V
Reverse recovery charge Q
F
rr
IF = 100 A
IF = 100 A, VR = 600 V, R
Peak reverse recovery current I
Reverse recovery energy E
rr
rec
Revision: 06-Aug-12
For technical questions within your region: DiodesAmericas@vishay.com
= 5.6
G
V
GE
2
= - 15 V
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
J
T
= 125 °C - 1.95 -
J
= 25 °C - 8.1 -
T
J
T
= 125 °C - 14.0 -
J
TJ = 25 °C - 81 -
T
= 125 °C - 98 -
J
TJ = 25 °C - 2.99 -
T
= 125 °C - 4.85 -
J
Document Number: 93800
V
μC
A
mJ
VS-GT100TP120N
0
25
50
75
100
125
150
175
200
0 0.5 1 1.5 2 2.5 3 3.5 4
I
C
(A)
VCE (V)
25 °C
175 °C
VGE = 15 V
0
25
50
75
100
125
150
175
200
456789101112
175 °C
25 °C
VCE = 50 V
VGE (V)
I
C
(A)
www.vishay.com
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction temperature range T
Storage temperature range T
Junction to case
IGBT
per ½ module
Case to sink (Conductive grease applied) R
Mounting torque
Weight Weight of module - 150 - g
J
Stg
R
thJC
thCS
Power terminal screw: M5 2.5 to 5.0
Mounting screw: M6 3.0 to 5.0
Vishay Semiconductors
- - 175 °C
- 40 - 125 °C
- - 0.23
K/WDiode - - 0.36
-0.05-
Nm
Fig. 1 - IGBT Typical Output Characteristics
30
25
20
15
E (mJ)
10
E (mJ)
V
CC = 600 V
= 5.6 Ω
R
G
= ± 15 V
V
GE
= 125 °C
T
J
E
ON
E
5
0
0 50 100 150 200
OFF
IC (A)
Fig. 3 - IGBT Switching Loss vs. I
35
30
V
25
20
15
10
E
ON
CC = 600 V
= 100 A
I
C
= ± 15 V
V
GE
= 125 °C
T
J
C
Fig. 2 - IGBT Transfer Characteristics
Revision: 06-Aug-12
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5
0
0 102030405060
E
OFF
Rg (Ω)
Fig. 4 - IGBT Switching Loss vs. R
3
Document Number: 93800
G
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www.vishay.com
0.001
0.01
0.1
1
0.001
0.01 0.1
1
10
IGBT
t (s)
Z
thJC
(K/W)
VS-GT100TP120N
Vishay Semiconductors
250
(A)
C
I
200
150
100
RG = 5.6 Ω
50
0
0 350 700 1050 1400
= ± 15 V
V
GE
T
= 125 °C
J
Module
VCE (V)
Fig. 5 - RBSOA
(A)
F
I
Revision: 06-Aug-12
Fig. 6 - IGBT Transient Thermal Impedance
200
175
150
125
100
75
50
25
0
0 0.5 1 1.5 2 2.5 3
25 °C
125 °C
VF (V)
Fig. 7 - Diode Forward Characteristics Fig. 8 - Diode Switching Loss vs. I
4
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
8
V
CC = 600 V
7
R
= 5.6 Ω
G
= - 15 V
V
GE
6
= 125 °C
T
J
5
E
E (mJ)
4
3
2
1
0
0 50 100 150 200
REC
IF (V)
Document Number: 93800
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F
www.vishay.com
0.01
0.1
1
0.001 0.01 0.1 1 10
t (s)
Z
thJC
(K/W)
Diode
1
6 7
3
2
5 4
VS-GT100TP120N
Vishay Semiconductors
6
5
E (mJ)
4
3
V
2
1
0
CC = 600 V
= 100 A
I
F
V
= - 15 V
GE
T
= 125 °C
J
0 102030405060
Fig. 9 - Diode Switching Loss vs. R
E
REC
R
(Ω)
G
G
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
Revision: 06-Aug-12
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93800
www.vishay.com
23.5
30.58
6.92
13.64 13 13.64
18.97 18.98
22.2
31.4
7.2
40
80
94.1
23 23
17
123
6
4.5 17
34
12.5
4.5
754
3 - M5.0
2 - Ø 6.4
DIMENSIONS in millimeters
VS-GT100TP120N
Vishay Semiconductors
Revision: 06-Aug-12
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
6
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 93800
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000
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