C&H Technology VS-GT100DA120U User Manual

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Suite 108
Minnetonka, MN 55345

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C & H TECHNOLOGY, INC. ● 6121 BAKER RD. SUITE 108 ● MINNETONKA, MINNESOTA 55345 ●

800-274-4284 ● 952-933-6190 ● FAX: [phone] ● WWW.CHTECHNOLOGY.COM

www.vishay.com

SOT-227

Insulated Gate Bipolar Transistor

PRODUCT SUMMARY

V

CES

I

DC 100 A at 119 °C

C

typical at 100 A, 25 °C 1.73 V

V

CE(on)

Package SOT-227

Circuit Single Switch Diode

(Trench IGBT), 100 A

FEATURES

• Trench IGBT technology with positive
temperature coefficient

• Square RBSOA

• 10 μs short circuit capability

•HEXFRED
recovery

•TJ maximum = 150 °C

• Fully isolated package

• Very low internal inductance ( 5 nH typical)

• Industry standard outline

• UL approved file E78996

• Material categorization: For definitions of compliance

1200 V

please see www.vishay.com/doc?99912

BENEFITS

• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating

• Easy to assemble and parallel

• Direct mounting to heatsink

• Plug-in compatible with other SOT-227 packages

• Speed 4 kHz to 30 kHz

• Very low V

• Low EMI, requires less snubbing

VS-GT100DA120U

Vishay Semiconductors

®

antiparallel diodes with ultrasoft reverse

CE(on)

Note

(1)

Revision: 13-Sep-13

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Peak diode forward current I

Gate to emitter voltage V

Power dissipation, IGBT P

Power dissipation, diode P

Isolation voltage V

Maximum continuous collector current must be limited to 100 A to do not exceed the maximum temperature of terminals

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

CES

C

CM

LM

FSM

GE

ISOL

TC = 25 °C 258

(1)

T

= 80 °C 174

C

TC = 25 °C 50

F

T

= 80 °C 34

C

TC = 25 °C 893

D

D

= 119 °C 221

T

C

TC = 25 °C 176

= 119 °C 44

T

C

Any terminal to case, t = 1 min 2500 V

1

, [e-mail], [e-mail]

1200 V

450

450

180

± 20 V

Document Number: 93196

A

W

VS-GT100DA120U

www.vishay.com

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

BR(CES)

VGE = 0 V, IC = 250 μA 1200 - -

VGE = 15 V, IC = 100 A - 1.73 2.1

Gate threshold voltage V

Temperature coefficient of
threshold voltage

V

GE(th)

Collector to emitter leakage current I

Forward voltage drop V

Gate to emitter leakage current I

CE(on)

GE(th)

/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - -17.6 - mV/°C

CES

FM

GES

= 15 V, IC = 100 A, TJ = 125 °C - 1.98 2.2

V

GE

VCE = VGE, IC = 7.5 mA 4.9 5.9 7.9

VGE = 0 V, VCE = 1200 V - 0.6 100 μA

= 0 V, VCE = 1200 V, TJ = 125 °C - 0.6 10 mA

V

GE

IF = 40 A, VGE = 0 V - 2.81 3.3

= 40 A, VGE = 0 V, TJ = 125 °C - 3.07 3.4

I

F

VGE = ± 20 V - - ± 200 nA

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Reverse bias safe operating area RBSOA

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Short circuit safe operating area SCSOA

on

off

tot

on

off

tot

d(on)

d(off)

rr

rr

rr

rr

IC = 100 A, VCC = 720 V,
V

= 15 V, Rg = 5 

GE

L = 500 μH, T

= 25 °C

J

Energy losses
include tail and

IC = 100 A, VCC = 720 V,
V

= 15 V, Rg = 5  

GE

r

f

L = 500 μH, T

= 150 °C, IC = 450 A, Rg = 22 

T

J

V

= 15 V to 0 V, VCC = 900 V,

GE

= 1200 V, L = 500 μH

V

P

= 125 °C

J

diode recovery
(see fig. 20)

IF = 50 A, dIF/dt = 200 A/μs, Vrr = 400 V

rr

IF = 50 A, dIF/dt = 200 A/μs, 

= 400 V, TJ = 125 °C

V

rr

rr

= 150 °C, Rg = 22 ,

T

J

V

= 15 V to 0 V, VCC = 900 V,

GE

= 1200 V

V

p

Vishay Semiconductors

VCollector to emitter voltage V

V

-5.2-

-7.1-

-12.3-

-6.1-

-9.8-

-15.9-

- 350 -

-75-

- 374 -

- 493 -

Fullsquare

- 164 194 ns

-1215A

- 994 1455 nC

- 230 273 ns

-16.520 A

- 1864 2730 nC

10 μs

mJ

ns

Revision: 13-Sep-13

For technical questions within your region: [e-mail]

2

, [e-mail], [e-mail]

Document Number: 93196

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-GT100DA120U

Allowable Case Temperature (°C)

IC - Continuous Collector Current (A)

0

93196_01

40 80 120 200160 240 280

0

160

100

120

140

20

40

60

80

IGBT DC

I

C

(A)

VCE (V)

1 10 100 1000 10 000

0.01

0.1

1

93196_02

1000

10

100

Allowable Case Temperature (°C)

IF - Continuous Forward Current (A)

402010 30 50

60

0

100

160

180

0

40

60

140

80

120

20

93196_04

Diode DC

www.vishay.com

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Junction and storage temperature range T

Junction to case

IGBT

Case to heatsink R

Weight -30-g

Mounting torque --1.3Nm

Case style SOT-227

Fig. 1 - Maximum DC IGBT Collector Current vs.

Case Temperature

J

R

, T

thJC

thCS

Stg

Flat, greased surface - 0.1 -

300

275

250

225

200

175

150

(A)

C

I

125

100

75

50

25

0

04.00.5 1.0 1.5 2.0 2.5 3.0 3.5

93196_03

Fig. 3 - Typical IGBT Collector Current Characteristics

Vishay Semiconductors

-40 - 150 °C

- - 0.14

TJ = 125 °C

TJ = 25 °C

VCE (V)

V

GE

= 15 V

TJ = 150 °C

°C/WDiode - - 0.71

Revision: 13-Sep-13

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 2 - IGBT Reverse Bias SOA

T

= 150 °C, VGE = 15 V

J

Fig. 4 - Maximum DC Forward Current vs.

3

, [e-mail], [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Case Temperature

Document Number: 93196