C&H Technology VS-GT100DA120U User Manual

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C & H TECHNOLOGY, INC. ● 6121 BAKER RD. SUITE 108 ● MINNETONKA, MINNESOTA 55345 ●

800-274-4284 ● 952-933-6190 ● FAX: [phone] ● WWW.CHTECHNOLOGY.COM

www.vishay.com

SOT-227

Insulated Gate Bipolar Transistor

PRODUCT SUMMARY

V

CES

I

DC 100 A at 119 °C

C

typical at 100 A, 25 °C 1.73 V

V

CE(on)

Package SOT-227

Circuit Single Switch Diode

(Trench IGBT), 100 A

FEATURES

• Trench IGBT technology with positive
temperature coefficient

• Square RBSOA

• 10 μs short circuit capability

•HEXFRED
recovery

•TJ maximum = 150 °C

• Fully isolated package

• Very low internal inductance ( 5 nH typical)

• Industry standard outline

• UL approved file E78996

• Material categorization: For definitions of compliance

1200 V

please see www.vishay.com/doc?99912

BENEFITS

• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating

• Easy to assemble and parallel

• Direct mounting to heatsink

• Plug-in compatible with other SOT-227 packages

• Speed 4 kHz to 30 kHz

• Very low V

• Low EMI, requires less snubbing

VS-GT100DA120U

Vishay Semiconductors

®

antiparallel diodes with ultrasoft reverse

CE(on)

Note

(1)

Revision: 13-Sep-13

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Peak diode forward current I

Gate to emitter voltage V

Power dissipation, IGBT P

Power dissipation, diode P

Isolation voltage V

Maximum continuous collector current must be limited to 100 A to do not exceed the maximum temperature of terminals

For technical questions within your region: [e-mail]

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CES

C

CM

LM

FSM

GE

ISOL

TC = 25 °C 258

(1)

T

= 80 °C 174

C

TC = 25 °C 50

F

T

= 80 °C 34

C

TC = 25 °C 893

D

D

= 119 °C 221

T

C

TC = 25 °C 176

= 119 °C 44

T

C

Any terminal to case, t = 1 min 2500 V

1

, [e-mail], [e-mail]

1200 V

450

450

180

± 20 V

Document Number: 93196

A

W

VS-GT100DA120U

www.vishay.com

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

BR(CES)

VGE = 0 V, IC = 250 μA 1200 - -

VGE = 15 V, IC = 100 A - 1.73 2.1

Gate threshold voltage V

Temperature coefficient of
threshold voltage

V

GE(th)

Collector to emitter leakage current I

Forward voltage drop V

Gate to emitter leakage current I

CE(on)

GE(th)

/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - -17.6 - mV/°C

CES

FM

GES

= 15 V, IC = 100 A, TJ = 125 °C - 1.98 2.2

V

GE

VCE = VGE, IC = 7.5 mA 4.9 5.9 7.9

VGE = 0 V, VCE = 1200 V - 0.6 100 μA

= 0 V, VCE = 1200 V, TJ = 125 °C - 0.6 10 mA

V

GE

IF = 40 A, VGE = 0 V - 2.81 3.3

= 40 A, VGE = 0 V, TJ = 125 °C - 3.07 3.4

I

F

VGE = ± 20 V - - ± 200 nA

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Reverse bias safe operating area RBSOA

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Short circuit safe operating area SCSOA

on

off

tot

on

off

tot

d(on)

d(off)

rr

rr

rr

rr

IC = 100 A, VCC = 720 V,
V

= 15 V, Rg = 5 

GE

L = 500 μH, T

= 25 °C

J

Energy losses
include tail and

IC = 100 A, VCC = 720 V,
V

= 15 V, Rg = 5  

GE

r

f

L = 500 μH, T

= 150 °C, IC = 450 A, Rg = 22 

T

J

V

= 15 V to 0 V, VCC = 900 V,

GE

= 1200 V, L = 500 μH

V

P

= 125 °C

J

diode recovery
(see fig. 20)

IF = 50 A, dIF/dt = 200 A/μs, Vrr = 400 V

rr

IF = 50 A, dIF/dt = 200 A/μs, 

= 400 V, TJ = 125 °C

V

rr

rr

= 150 °C, Rg = 22 ,

T

J

V

= 15 V to 0 V, VCC = 900 V,

GE

= 1200 V

V

p

Vishay Semiconductors

VCollector to emitter voltage V

V

-5.2-

-7.1-

-12.3-

-6.1-

-9.8-

-15.9-

- 350 -

-75-

- 374 -

- 493 -

Fullsquare

- 164 194 ns

-1215A

- 994 1455 nC

- 230 273 ns

-16.520 A

- 1864 2730 nC

10 μs

mJ

ns

Revision: 13-Sep-13

For technical questions within your region: [e-mail]

2

, [e-mail], [e-mail]

Document Number: 93196

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-GT100DA120U

Allowable Case Temperature (°C)

IC - Continuous Collector Current (A)

0

93196_01

40 80 120 200160 240 280

0

160

100

120

140

20

40

60

80

IGBT DC

I

C

(A)

VCE (V)

1 10 100 1000 10 000

0.01

0.1

1

93196_02

1000

10

100

Allowable Case Temperature (°C)

IF - Continuous Forward Current (A)

402010 30 50

60

0

100

160

180

0

40

60

140

80

120

20

93196_04

Diode DC

www.vishay.com

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Junction and storage temperature range T

Junction to case

IGBT

Case to heatsink R

Weight -30-g

Mounting torque --1.3Nm

Case style SOT-227

Fig. 1 - Maximum DC IGBT Collector Current vs.

Case Temperature

J

R

, T

thJC

thCS

Stg

Flat, greased surface - 0.1 -

300

275

250

225

200

175

150

(A)

C

I

125

100

75

50

25

0

04.00.5 1.0 1.5 2.0 2.5 3.0 3.5

93196_03

Fig. 3 - Typical IGBT Collector Current Characteristics

Vishay Semiconductors

-40 - 150 °C

- - 0.14

TJ = 125 °C

TJ = 25 °C

VCE (V)

V

GE

= 15 V

TJ = 150 °C

°C/WDiode - - 0.71

Revision: 13-Sep-13

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 2 - IGBT Reverse Bias SOA

T

= 150 °C, VGE = 15 V

J

Fig. 4 - Maximum DC Forward Current vs.

3

, [e-mail], [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Case Temperature

Document Number: 93196

www.vishay.com

I

F

(A)

VFM (V)

07123456

0

93196_05

200

100

75

175

50

150

25

125

TJ = 25 °C

TJ = 125 °C

TJ = 150 °C

I

CES

(mA)

V

CES

(V)

100 1300300 500 700 900 1100

0.00001

93196_06

10

0.1

0.01

0.001

0.0001

1

TJ = 25 °C

TJ = 125 °C

TJ = 150 °C

V

geth

(V)

IC (mA)

081246357

3.0

3.5

4.0

4.5

5.0

5.5

93196_07

6.0

TJ = 25 °C

TJ = 125 °C

V

CE

(V)

TJ (°C)

20 16040 80 12060 100 140

1.00

1.50

2.00

93196_08

2.75

1.25

1.75

2.25

2.50

100 A

150 A

50 A

27 A

Energy (mJ)

IC (A)

20 30 50 907040 60 10080 110

1

93196_09

11

5

9

7

3

6

10

8

4

2

E

on

E

off

VS-GT100DA120U

Vishay Semiconductors

Fig. 5 - Typical Diode Forward Characteristics

Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current

Fig. 8 - Typical IGBT Collector to Emitter Voltage vs.

Junction Temperature, V

Fig. 9 - Typical IGBT Energy Loss vs. I

TJ = 125 °C, L = 500 μH, VCC = 720 V,

R

= 5 , VGE = 15 V

g

1000

t

d(off)

t

d(on)

t

= 15 V

GE

C

f

Revision: 13-Sep-13

Fig. 7 - Typical IGBT Threshold Voltage

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Switching Time (ns)

93196_10

4

, [e-mail], [e-mail]

100

t

r

10

20 30 50 70 9060 80 10040 110

IC (A)

Fig. 10 - Typical IGBT Switching Time vs. I

TJ = 125 °C, L = 500 μH, VCC = 720 V,

R

= 5 , VGE = 15 V

g

Document Number: 93196

C

www.vishay.com

Q

rr

(nC)

dIF/dt (A/μs)

100 1000

0

93196_15

3000

1000

1500

2500

2000

500

TJ = 125 °C

TJ = 25 °C

VS-GT100DA120U

Vishay Semiconductors

40

35

30

25

20

Energy (mJ)

15

10

5

01020 4030 50

93196_11

Fig. 11 - Typical IGBT Energy Loss vs. R

10 000

1000

100

Switching Time (ns)

10

010 304020 50

93196_12

Fig. 12 - Typical IGBT Switching Time vs. R

TJ = 125 °C, L = 500 μH, VCC = 720 V,

E

on

E

off

Rg (Ω)

TJ = 125 °C, IC = 100 A, L = 500 μH,

V

= 720 V, VGE = 15 V

CC

t

d(on)

t

f

t

r

Rg (Ω)

I

= 100 A, VGE = 15 V

C

t

d(off)

310

290

270

250

230

210

(ns)

190

rr

t

170

150

130

110

90

93196_13

g

45

40

35

30

25

(A)

rr

I

20

15

10

5

0

93196_14

g

TJ = 25 °C

100

Fig. 13 - Typical t

100

Fig. 14 - Typical I

V

= 400 V, IF = 50 A

rr

TJ = 125 °C

V

= 400 V, IF = 50 A

rr

TJ = 125 °C

dIF/dt (A/μs)

Diode vs. dIF/dt

rr

TJ = 25 °C

dIF/dt (A/μs)

Diode vs. dIF/dt

rr

1000

1000

Revision: 13-Sep-13

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 15 - Typical Q

V

= 400 V, IF = 50 A

rr

Diode vs. dIF/dt

rr

5

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Document Number: 93196

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0.001

0.01

0.1

1

0.00001

93196_16

0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance

Junction to Case (°C/W)

10

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC

0.001

0.01

0.1

10

1

0.00001

93196_17

0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance

Junction to Case (°C/W)

10

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC

VS-GT100DA120U

Vishay Semiconductors

Fig. 16 - Maximum Thermal Impedance Z

Fig. 17 - Maximum Thermal Impedance Z

Characteristics (IGBT)

thJC

Characteristics (Diode)

thJC

Revision: 13-Sep-13

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Document Number: 93196

VS-GT100DA120U

L

Diode clamp/

D.U.T.

D.U.T./

driver

- 5 V

+

-

R

g

V

CC

+

-

t = 5 µs

t

d(on)

t

f

t

r

90 %

t

d(off)

10 %

90 %

10 %

5 %

V

C

I

C

E

on

E

off

Ets = (Eon + E

off

)

1

2

3

www.vishay.com

L

V

*

50 V

C

1000 V

1

* Driver same type as D.U.T.; VC = 80 % of V
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id

Fig. 18a - Clamped Inductive Load Test Circuit Fig. 18b - Pulsed Collector Current Test Circuit

D.U.T.

2

ce(max)

Vishay Semiconductors

V

CC

R =

I

CM

D.U.T.

R

g

+

-

V

CC

Fig. 19a - Switching Loss Test Circuit

Fig. 19b - Switching Loss Waveforms Test Circuit

Revision: 13-Sep-13

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Document Number: 93196

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ORDERING INFORMATION TABLE

VS-GT100DA120U

Vishay Semiconductors

Device code

CIRCUIT CONFIGURATION

VS-

G T 100 D A 120 U

51 32 4 6 7 8

- Vishay Semiconductors product

1

2

- Insulated Gate Bipolar Transistor (IGBT)

3

- T = Trench IGBT technology

4

- Current rating (100 = 100 A)

5

- Circuit configuration (D = Single switch with antiparallel diode)

6

- Package indicator (A = SOT-227)

- Voltage rating (120 = 1200 V)

7

- Speed/type (U = Ultrafast)

8

3 (C)

2 (G)

1, 4 (E)

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95036

Packaging information www.vishay.com/doc?95037

Revision: 13-Sep-13

For technical questions within your region: [e-mail]

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Document Number: 93196

DIMENSIONS in millimeters (inches)

38.30 (1.508)

37.80 (1.488)

-A-

4

12

3

12.50 (0.492)

7.50 (0.295)

Ø 4.40 (0.173)
Ø 4.20 (0.165)

30.20 (1.189)

29.80 (1.173)

15.00 (0.590)

6.25 (0.246)

25.70 (1.012)

25.20 (0.992)

-B-

R full

Chamfer

2.00 (0.079) x 45°

2.10 (0.082)

1.90 (0.075)

8.10 (0.319)

7.70 (0.303)

4 x

2.10 (0.082)

1.90 (0.075)

-C-

0.12 (0.005)

12.30 (0.484)

11.80 (0.464)

MMM

0.25 (0.010)

CA B

4 x M4 nuts

Outline Dimensions

Vishay Semiconductors

SOT-227

Notes

• Dimensioning and tolerancing per ANSI Y14.5M-1982

• Controlling dimension: millimeter

Document Number: 95036 For technical questions, contact: [e-mail]
Revision: 28-Aug-07 1

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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

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Document Number: 91000