C&H Technology VS-GB90SA120U User Manual

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SOT-227

Insulated Gate Bipolar Transistor

PRODUCT SUMMARY

V

CES

DC 90 A at 90 °C

I

C

typical at 75 A, 25 °C 3.3 V

V

CE(on)

(Ultrafast IGBT), 90 A

FEATURES

• NPT Generation V IGBT technology

•Square RBSOA

• Positive V

• Fully isolated package

• Speed 8 kHz to 60 kHz

• Very low internal inductance ( 5 nH typical)

• Industry standard outline

• UL approved file E78996

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

1200 V

BENEFITS

• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating

• Easy to assemble and parallel

• Direct mounting on heatsink

• Plug-in compatible with other SOT-227 packages

• Low EMI, requires less snubbing

VS-GB90SA120U

Vishay Semiconductors

temperature coefficient

CE(on)

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Gate to emitter voltage V

Power dissipation, IGBT P

Isolation voltage V

Note

(1)

Maximum collector current admitted is 100 A, to do exceed the maximum temperature of terminals

CES

C

CM

LM

ISOL

TC = 25 °C 149

(1)

GE

D

= 90 °C 90

T

C

TC = 25 °C 862

T

= 90 °C 414

C

Any terminal to case, t = 1 min 2500 V

1200 V

200

200

± 20 V

A

W

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Document Number: 94725

VS-GB90SA120U

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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

BR(CES)

VGE = 0 V, IC = 250 μA 1200 - -

VGE = 15 V, IC = 75 A - 3.3 3.8

V

Collector to emitter voltage V

Gate threshold voltage V

Temperature coefficient of threshold voltage V

CE(on)

GE(th)

/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 12 - mV/°C

GE(th)

= 15 V, IC = 75 A, TJ = 125 °C - 3.6 3.9

GE

V

= 15 V, IC = 75 A, TJ = 150 °C - 3.7 -

GE

VCE = VGE, IC = 250 μA 4 5 6

V

= VGE, IC = 250 μA, TJ = 125 °C - 3.2 -

CE

VGE = 0 V, VCE = 1200 V - 7 250 μA

V

Collector to emitter leakage current I

Gate to emitter leakage current I

CES

GES

= 0 V, VCE = 1200 V, TJ = 125 °C - 1.4 10

GE

V

= 0 V, VCE = 1200 V, TJ = 150 °C - 6.5 20

GE

VGE = ± 20 V - - ± 250 nA

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Reverse bias safe operating area RBSOA

ge

gc

on

off

tot

d(on)

r

d(off)

on

off

tot

d(on)

r

d(off)

g

IC = 50 A, VCC = 600 V, VGE = 15 V

IC = 75 A, VCC = 600 V,

V

= 15 V, Rg = 5 

GE

L = 500 μH, T

f

= 25 °C

J

IC = 75 A, VCC = 600 V,
V

= 15 V, Rg = 5 

f

GE

L = 500 μH, T

T

= 150 °C, IC = 200 A, Rg = 22 

J

= 15 V to 0 V, VCC = 900 V,

V

GE

= 1200 V, L = 500 μH

V

P

= 125 °C

J

Energy losses
include tail and
diode recovery
Diode used
HFA16PB120

Vishay Semiconductors

V

mA

- 690 -

-65-

- 250 -

-1.2-

-2.1-

-3.3-

- 250 -

-38-

- 280 -

-90-

-1.7-

-4.08-

-5.78-

- 245 -

-48-

- 280 -

- 140 -

Fullsquare

nCGate to emitter charge (turn-on) Q

mJTurn-off switching loss E

ns

mJTurn-off switching loss E

ns

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Maximum junction and storage temperature range T

Junction to case thermal resistance IGBT R

Case to sink thermal resistance, flat, greased surface R

J

, T

thJC

thCS

Stg

Mounting torque, on terminals and heatsink - - 1.3 Nm

Weight -30-g

Case style SOT-227

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- 40 - 150 °C

- - 0.145

-0.1-

Document Number: 94725

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°C/W

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V

CES -

Collector-to-Emitter Voltage (V)

I

CES

-

Collector-to-Emitter Current (A)

0.01

0.1

1

10

100

0.0001

0.001

0 200 400 600 800 1000 1200

TJ = 25 °C

T

J

= 125 °C

T

J

= 150 °C

V

GE(th)

Threshold Voltage (V)

IC (A)

3.5

4

4.5

5

5.5

6

2

2.5

3

0.20 0.40 0.60 0.80 1.00

TJ = 25 °C

T

J

= 125 °C

160

140

120

100

80

60

40

20

Allowable Case Temperature (°C)

0

0 20 40 60 80 100 120 140 160

IC - Continuous Collector Current (A)

Fig. 1 - Maximum DC IGBT Collector Current vs.

Case Temperature

DC

VS-GB90SA120U

Vishay Semiconductors

Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current

200

150

100

Collector-to-Emitter Current (A)

-

C

I

VGE = 15 V

T

TJ = 25 °C

50

0

0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0

V

Collector-to-Emitter Voltage (V)

CE -

Fig. 2 - Typical Collector to Emitter Current

Output Characteristics of IGBT

100

90

80

70

60

50

40

30

20

Collector-to-Emitter Current (A)

10

-

C

I

0

4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0

V

Gate-to-Emitter Voltage (V)

GE -

Fig. 3 - Typical IGBT Transfer Characteristics

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= 125 °C

J

T

= 150 °C

J

Fig. 5 - Typical IGBT Threshold Voltage

5

4.5

4

= 125 °C

T

J

TJ = 25 °C

3.5

2.5

Collector-to-Emitter Voltage (V)

1.5

-

CE

V

3

2

1

0 20 40 60 80 100 120 140 160

TJ - Junction Temperature (°C)

Fig. 6 - Typical IGBT Collector to Emitter Voltage vs. Junction

Temperature, V

3

, [e-mail], [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IC = 100 A

I

= 75 A

C

= 50 A

I

C

I

= 25 A

C

= 15 V

GE

Document Number: 94725

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IC - Collector Current (A)

Switching Energy (mJ)

E

on

E

off

1.5

2

2.5

3

3.5

4

4.5

5

0

0.5

1

10 20 30 40 50 60 70 80 90 100

IC - Collector Current (A)

Switching Time (μs)

0.1

1

0.01
0 20 40 60 80

t

r

t

f

t

d(on)

t

d(off)

R

g

(Ω)

Energy Losses (mJ)

4

6

8

10

12

14

0

2

4

0 10 20 30 40 50

E

on

E

off

Rectangular Pulse Duration (s)

Z

thJC

-

Thermal Impedance

Junction to Case (°C/W)

0.01

0.1

1

0.001

0.0001 0.001 0.01 0.1 1 10

P

DM

t

2

t

1

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

0.75

0.50

0.25

0.1

0.05

0.02
DC

VS-GB90SA120U

Vishay Semiconductors

Fig. 7 - Typical IGBT Energy Losses vs. I

TJ = 125 °C, L = 500 μH, VCC = 600 V,

R

= 5 , VGE = 15 V, Diode used HFA16PB120

g

Fig. 8 - Typical IGBT Switching Time vs. I

TJ = 125 °C, L = 500 μH, VCC = 600 V,

R

= 5 , VGE = 15 V, Diode used HFA16PB120

g

C

Fig. 9 - Typical IGBT Energy Loss vs. R

TJ = 125 °C, IC = 75 A, L = 500 μH,

V

= 600 V, VGE = 15 V, Diode used HFA16PB120

CC

g,

10 000

t

1000

t

f

d(on)

t

d(off)

100

t

Switching Time (µs)

10

0203010 40 50

r

RG (Ω)

C

Fig. 10 - Typical IGBT Switching Time vs. R

TJ = 125 °C, L = 500 μH, VCC = 600 V,

R

= 5 , VGE = 15 V

g

g

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Fig. 11 - Maximum Thermal Impedance Z

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

4

Characteristics (IGBT)

thJC

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Document Number: 94725

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I

C

(A)

VCE (V)

10 100 1000 10 000

1

1000

10

100

L

Diode clamp/

D.U.T.

D.U.T./

driver

- 5 V

+

-

R

g

V

CC

+

-

Fig. 12 - IGBT Reverse Bias SOA, TJ = 150 °C, VGE = 15 V

L

V

*

50 V

1000 V

1

* Driver same type as D.U.T.; VC = 80 % of V
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id

C

ce(max.)

D.U.T.

VS-GB90SA120U

Vishay Semiconductors

V

CC

R =

I

CM

+

-

D.U.T.

2

R

g

V

CC

Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit

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Fig. 14a - Switching Loss Test Circuit

5

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Document Number: 94725

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t = 5 µs

t

d(on)

t

f

t

r

90 %

t

d(off)

10 %

90 %

10 %

5 %

V

C

I

C

E

on

E

off

Ets = (Eon + E

off

)

1

2

3

1

- Insulated Gate Bipolar Transistor (IGBT)

- Vishay Semiconductors product

2

- B = IGBT Generation 5

3

- Current rating (90 = 90 A)

4

- Circuit configuration (S = Single switch without antiparallel diode)

5

- Package indicator (A = SOT-227)

6

- Voltage rating (120 = 1200 V)

8

7

- Speed/type (U = Ultrafast IGBT)

Device code

5

1

32 4 6 7 8

GVS- B 90 S A 120 U

Fig. 14b - Switching Loss Waveforms Test Circuit

ORDERING INFORMATION TABLE

VS-GB90SA120U

Vishay Semiconductors

CIRCUIT CONFIGURATION

CIRCUIT

S

2 (G)

LINKS TO RELATED DOCUMENTS

6

CIRCUIT DRAWING

3 (C)

1, 4 (E)

Lead Assignment

43

1

Document Number: 94725

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CIRCUIT

CONFIGURATION CODE

Single switch, no
antiparallel diode

Dimensions www.vishay.com/doc?95423

Packaging information www.vishay.com/doc?95425

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38.30 (1.508)

37.80 (1.488)

-A-

12.50 (0.492)

13.00 (0.512)

7.45 (0.293)

7.60 (0.299)

Ø 4.10 (0.161)
Ø 4.30 (0.169)

30.50 (1.200)

29.80 (1.173)

31.50 (1.240)

32.10 (1.264)

14.90 (0.587)

15.20 (0.598)

6.25 (0.246)

6.50 (0.256)

25.70 (1.012)

24.70 (0.972)

2.10 (0.083)

2.20 (0.087)

-B-

R full

2.20 (0.087)

1.90 (0.075)

8.30 (0.327)

7.70 (0.303)

4 x

4.10 (0.161)

4.50 (0.177)

-C-

0.13 (0.005)

12.30 (0.484)

11.70 (0.460)

25.00 (0.984)

25.50 (1.004)

M M M

0.25 (0.010)

CA B

4 x M4 nuts

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay Semiconductors

SOT-227 Generation II

Note

• Controlling dimension: millimeter

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Document Number: 91000