C&H Technology VS-GB90DA60U User Manual

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Suite 108
Minnetonka, MN 55345

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Fax [phone]

1-800-274-4284

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Technical

Application

Assembly

Availability

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Phone – 1-800-274-4284

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SOT-227

Insulated Gate Bipolar Transistor

PRODUCT SUMMARY

V

CES

DC 90 A at 90 °C

I

C

typical at 100 A, 25 °C 2.40 V

V

CE(on)

DC 108 A at 90 °C

I

F

(Warp 2 Speed IGBT), 90 A

FEATURES

• NPT warp 2 speed IGBT technology with
positive temperature coefficient

•Square RBSOA

®

antiparallel diodes with ultrasoft

600 V

•HEXFRED
reverse recovery

• Fully isolated package

• Very low internal inductance ( 5 nH typical)

• Industry standard outline

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

BENEFITS

• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating

• Easy to assemble and parallel

• Direct mounting to heatsink

• Plug-in compatible with other SOT-227 packages

• Higher switching frequency up to 150 kHz

• Lower conduction losses and switching losses

• Low EMI, requires less snubbing

VS-GB90DA60U

Vishay Semiconductors

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Gate-to-emitter voltage V

Power dissipation, IGBT P

Power dissipation, diode P

Isolation voltage V

CES

C

CM

LM

F

GE

D

D

ISOL

TC = 25 °C 147

= 90 °C 90

T

C

TC = 25 °C 180

= 90 °C 108

T

C

TC = 25 °C 625

= 90 °C 300

T

C

TC = 25 °C 379

= 90 °C 182

T

C

Any terminal to case, t = 1 min 2500 V

600 V

300

300

± 20 V

A

W

Revision: 19-Sep-12

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Document Number: 94771

VS-GB90DA60U

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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown
voltage

Collector to emitter voltage V

Gate threshold voltage V

Temperature coefficient of threshold
voltage

Collector to emitter leakage current I

Forward voltage drop, diode V

Gate to emitter leakage current I

V

BR(CES)

VGE = 0 V, IC = 250 μA 600 - -

VGE = 15 V, IC = 100 A - 2.4 2.8

V

CE(on)

GE(th)

/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 10 - mV/°C

V

GE(th)

= 15 V, IC = 100 A, TJ = 125 °C - 3 3.4

GE

V

= 15 V, IC = 100 A, TJ = 150°C - 3.3 -

GE

VCE = VGE, IC = 250 μA 3 3.9 5.0

V

= VGE, IC = 250 μA, TJ = 125 °C - 2.5 -

CE

VGE = 0 V, VCE = 600 V - 7 100 μA

V

CES

= 0 V, VCE = 600 V, TJ = 125 °C - 1.5 6.0

GE

= 0 V, VCE = 600 V, TJ = 150 °C - 6 10

V

GE

IC = 100 A, VGE = 0 V - 1.6 2.1

FM

GES

= 100 A, VGE = 0 V, TJ = 125 °C - 1.56 2.0

C

I

= 100 A, VGE = 0 V, TJ = 150 °C - 1.53 -

C

VGE = ± 20 V - - ± 200 nA

Vishay Semiconductors

V

mA

VI

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

g

ge

gc

on

off

tot

d(on)

r

d(off)

f

on

off

tot

d(on)

r

d(off)

f

Reverse bias safe operating area RBSOA

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

rr

rr

rr

rr

rr

rr

IC = 100 A, VCC = 480 V, VGE = 15 V

IC = 100 A, VCC = 360 V,
V

= 15 V, Rg = 5 

GE

L = 500 μH, T

= 25 °C

J

Energy losses
include tail and
diode
recovery.
Diode used

IC = 100 A, VCC = 360 V,

= 15 V, Rg = 5 

V

GE

L = 500 μH, T

T

= 150 °C, IC = 300 A, Rg = 22 

J

= 15 V to 0 V, VCC = 400 V,

V

GE

= 600 V, L = 500 μH

V

P

= 125 °C

J

60APH06

IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V

IF = 50 A, dIF/dt = 200 A/μs,
V

= 200 V, TJ = 125 °C

R

- 460 690

- 160 250

nCGate to emitter charge (turn-on) Q

-70130

-0.39-

-1.10-

mJTurn-off switching loss E

-1.49-

- 245 -

-53-

- 240 -

ns

-63-

-0.52-

-1.24-

mJTurn-off switching loss E

-1.76-

- 240 -

-54-

- 250 -

ns

-80-

Fullsquare

-95-ns

-10- A

- 480 - nC

- 144 - ns

-16- A

- 1136 - nC

Revision: 19-Sep-12

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-GB90DA60U

IC - Continuous Collector Current (A)

Allowable Case Temperature (°C)

0 20 40 60 80 100 120 140 160

0

20

40

60

80

100

120

140

160

DC

V

CE -

Collector-to-Emitter Voltage (V)

I

C

-

Collector to Emitter Current (A)

0.0 1.0

2.0

3.0

4.0

5.0

6.0

0

200

100

50

150

250

300

VGE = 15V

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

IF - Continuous Forward Current (A)

Allowable Case Temperature (°C)

0 20 40 60 80 100 120 140 160 180 200

0

20

40

60

80

100

120

140

160

VF - Forward Voltage Drop (V)

I

F

- Forward Current (A)

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2

0

40

80

120

160

200

TJ = 25 °C

T

J

= 125 °C

T

J

= 150 °C

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THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

R

J

R

, T

thJC

thCS

Stg

Maximum junction and storage temperature T

Junction to case

IGBT

Diode - - 0.33

Case to sink thermal resistance, flat greased
surface

Mounting torque, on termianls and heatsink T - - 1.3 Nm

Weight -30-g

Case style SOT-227

- 40 - 150 °C

- - 0.20

-0.1-

Vishay Semiconductors

°C/W

Fig. 1 - Maximum DC IGBT Collector Current vs.

Fig. 2 - Typical Collector to Emitter Voltage (V)

Revision: 19-Sep-12

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Fig. 3 - Maximum Allowable Forward Current vs.

Case Temperature

Case Temperature, Diode Leg

Fig. 4 - Typical Forward Voltage Drop Characteristics

3

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IC - Collector Current (A)

Switching Energy (mJ)

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

E

on

E

off

10 20 30 40 50 60 70 80 90 100 110 120

VS-GB90DA60U

Vishay Semiconductors

160

140

120

100

TJ = 150 °C

80

60

40

20

Collector-to-Emitter Current (A)

-

C

I

0

3.0 3.5 4.0 4.5 5.0 6.05.5 6.5

V

Gate-to-Emitter Voltage (V)

GE -

Fig. 5 - Typical IGBT Transfer Characteristics

100

10

1

0.1

T

= 125 °C

J

TJ = 25 °C

= 150 °C

T

J

= 125 °C

T

J

3.4

3.2

2.8

2.6

2.4

2.2

1.8

1.6

1.4

Collector-to-Emitter Voltage (V)

-

1.2

CE

V

3

2

1

0 20 40 60 80 100 120 140 160

Ic = 100 A

Ic = 75 A

Ic = 50 A

Ic = 30 A

TJ - Junction Temperature (V)

Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction

Temperature, V

= 15 V

GE

0.01

Collector Current (mA)

-

0.001

CES

I

0.0001

Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current

Threshold Voltage (V)

-

GETH

V

Revision: 19-Sep-12

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TJ = 25 °C

0 100 200 300 400 500 600

V

Collector-to-Emitter Voltage (V)

CES -

5

4.5

4

3.5

3

2.5

2

1.5

1

0.20 0.40 0.60 0.80 1.00

TJ = 25 °C

TJ =125 °C

IC (mA)

Fig. 7 - Typical IGBT Threshold Voltage

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Fig. 9 - Typical IGBT Energy Losses vs. I

TJ = 125 °C, L = 500 μH, VCC = 360 V,

R

= 5 , VGE = 15 V, Diode used: 60APH06

g

1

t

d(off)

t

d(on)

0.1

Switching Time (μs)

0.01

t

f

t

r

0 20 40 60 80 100 120

IC - Collector Current (A)

Fig. 10 - Typical IGBT Switching Time vs. I

TJ = 125 °C, L = 500 μH, VCC = 360 V,

R

= 5 , VGE = 15 V, Diode used: 60APH06

g

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C

C

www.vishay.com

40

60

80

100

120

140

160

180

200

100 1000

t

rr

(ns)

diF/dt (A/μs)

25 °C

125 °C

IF = 50 A

V

R

= 200 V

0

500

1000

1500

2000

100 1000

Q

rr

(nC)

diF/dt (A/μs)

25 °C

125 °C

IF = 50 A

V

R

= 200 V

I

rr

(A)

diF/dt (A/μs)

0

5

10

15

20

25

30

35

100 1000

IF = 50 A

V

R

= 200 V

25 °C

125 °C

4

3.5

3

2.5

2

1.5

1

Energy Losses (mJ)

0.5

0

0 10 20 30 40 50

Rg (Ω)

VS-GB90DA60U

Vishay Semiconductors

E

on

E

off

Fig. 11 - Typical IGBT Energy Loss vs. R

TJ = 125 °C, IC = 100 A, L = 500 μH,

V

= 360 V, VGE = 15 V, Diode used: 60APH06

CC

1

0.1

Switching Time (μs)

0.01
0102030405060

Fig. 12 - Typical IGBT Switching Time vs. R

TJ = 125 °C, L = 500 μH, VCC = 360 V,

I

= 100 A, VGE = 15 V, Diode used: 60APH06

C

Rg (Ω)

t

d(on)

t

t

d(off)

r

t

f

g

g

Fig. 14 - Typical Stored Charge vs. dI

Fig. 15 - Typical Reverse Recovery Current vs. dI

/dt of Diode

F

/dt of Diode

F

Fig. 13 - Typical Reverse RecoveryTime vs. dI

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/dt, of Diode

F

5

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0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance

Junction to Case (°C/W)

.

.

P

DM

t

1

t

2

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

D = 0.75
D = 0.50
D = 0.25
D = 0.1
D = 0.05
D = 0.02
DC

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance

Junction to Case (°C/W)

.

.

P

DM

t

1

t

2

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

D = 0.75
D = 0.50
D = 0.25
D = 0.1
D = 0.05
D = 0.02
DC

VS-GB90DA60U

Vishay Semiconductors

Fig. 16 - Maximum Thermal Impedance Z

Fig. 17 - Maximum Thermal Impedance Z

1000

100

Characteristics, IGBT

thJC

Characteristics, Diode

thJC

10

(A)

C

I

1

0

1 10 100 1000

VCE (V)

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Fig. 18 - IGBT Reverse BIAS SOA, T

6

= 150 °C, VGE = 15 V

J

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Document Number: 94771

VS-GB90DA60U

L

Diode clamp/

D.U.T.

D.U.T./

driver

- 5 V

+

-

R

g

V

CC

+

-

t = 5 µs

t

d(on)

t

f

t

r

90 %

t

d(off)

10 %

90 %

10 %

5 %

V

C

I

C

E

on

E

off

Ets = (Eon + E

off

)

1

2

3

www.vishay.com

L

V

*

50 V

C

1000 V

1

* Driver same type as D.U.T.; VC = 80 % of V
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id

19a - Clamped Inductive Load Test Circuit 19b - Pulsed Collector Current Test Circuit

D.U.T.

2

ce(max)

Vishay Semiconductors

D.U.T.

R

g

R =

V

CC

I

CM

+

-

V

CC

20a - Switching Loss Test Circuit

20b - Switching Loss Waveforms Test Circuit

Revision: 19-Sep-12

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1

- Insulated Gate Bipolar Transistor (IGBT)

- Vishay Semiconductors product

2

- B = IGBT Generation 5

3

- Current rating (90 = 90 A)

4

- Circuit configuration (D = Single switch with antiparallel diode)

5

- Package indicator (A = SOT-227)

6

- Voltage rating (60 = 600 V)

8

7

- Speed/type (U = Ultrafast IGBT)

Device code

5

1

32 4 6 7 8

GVS- B 90 D A 60 U

ORDERING INFORMATION TABLE

VS-GB90DA60U

Vishay Semiconductors

CIRCUIT CONFIGURATION

CIRCUIT

2 separate diodes,
parallel pin-out

Dimensions www.vishay.com/doc?95423

Packaging information www.vishay.com/doc?95425

CONFIGURATION CODE

CIRCUIT

D

3 (C)

2 (G)

1, 4 (E)

LINKS TO RELATED DOCUMENTS

CIRCUIT DRAWING

Lead Assignment

43

1

2

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38.30 (1.508)

37.80 (1.488)

-A-

12.50 (0.492)

13.00 (0.512)

7.45 (0.293)

7.60 (0.299)

Ø 4.10 (0.161)
Ø 4.30 (0.169)

30.50 (1.200)

29.80 (1.173)

31.50 (1.240)

32.10 (1.264)

14.90 (0.587)

15.20 (0.598)

6.25 (0.246)

6.50 (0.256)

25.70 (1.012)

24.70 (0.972)

2.10 (0.083)

2.20 (0.087)

-B-

R full

2.20 (0.087)

1.90 (0.075)

8.30 (0.327)

7.70 (0.303)

4 x

4.10 (0.161)

4.50 (0.177)

-C-

0.13 (0.005)

12.30 (0.484)

11.70 (0.460)

25.00 (0.984)

25.50 (1.004)

M M M

0.25 (0.010)

CA B

4 x M4 nuts

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay Semiconductors

SOT-227 Generation II

Note

• Controlling dimension: millimeter

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Legal Disclaimer Notice

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Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

1

Document Number: 91000