C&H Technology VS-GB90DA120U User Manual

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Suite 108
Minnetonka, MN 55345

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SOT-227

Insulated Gate Bipolar Transistor

PRODUCT SUMMARY

V

CES

DC 90 A at 90 °C

I

C

typical at 75 A, 25 °C 3.3 V

V

CE(on)

(Ultrafast IGBT), 90 A

FEATURES

• NPT Generation V IGBT technology

•Square RBSOA

•HEXFRED

• Positive V

• Fully isolated package

• Speed 8 kHz to 60 kHz

• Very low internal inductance ( 5 nH typical)

• Industry standard outline

• UL approved file E78996

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

1200 V

BENEFITS

• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating

• Easy to assemble and parallel

• Direct mounting on heatsink

• Plug-in compatible with other SOT-227 packages

• Low EMI, requires less snubbing

VS-GB90DA120U

Vishay Semiconductors

®

low Qrr, low switching energy

temperature coefficient

CE(on)

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Gate to emitter voltage V

Power dissipation, IGBT P

Power dissipation, diode P

Isolation voltage V

Note

(1)

Maximum collector current admitted is 100 A, to do exceed the maximum temperature of terminals

CES

C

CM

LM

ISOL

TC = 25 °C 149

(1)

F

GE

D

D

= 90 °C 90

T

C

TC = 25 °C 76

= 90 °C 46

T

C

TC = 25 °C 862

= 90 °C 414

T

C

TC = 25 °C 357

= 90 °C 171

T

C

Any terminal to case, t = 1 min 2500 V

1200 V

200

200

± 20 V

A

W

Revision: 02-Aug-12

1

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

, [e-mail], [e-mail]

Document Number: 94722

VS-GB90DA120U

www.vishay.com

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Collector to emitter voltage V

Gate threshold voltage V

Temperature coefficient of threshold voltage V

GE(th)

Collector to emitter leakage current I

Forward voltage drop, diode V

Gate to emitter leakage current I

BR(CES)

CE(on)

GE(th)

CES

FM

GES

VGE = 0 V, IC = 250 μA 1200 - -

VGE = 15 V, IC = 75 A - 3.3 3.8

V

= 15 V, IC = 75 A, TJ = 125 °C - 3.6 3.9

GE

V

= 15 V, IC = 75 A, TJ = 150 °C - 3.7 -

GE

VCE = VGE, IC = 250 μA 4 5 6

V

= VGE, IC = 250 μA, TJ = 125 °C - 3.2 -

CE

/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 12 - mV/°C

VGE = 0 V, VCE = 1200 V - 7 250 μA

V

= 0 V, VCE = 1200 V, TJ = 125 °C - 1.4 10

GE

V

= 0 V, VCE = 1200 V, TJ = 150 °C - 6.5 20

GE

VGE = 0 V, IF = 75 A - 3.4 5.0

= 0 V, IF = 75 A, TJ = 125 °C - 3.2 5.2

GE

V

= 0 V, IF = 75 A, TJ = 150 °C - 3.05 -

GE

VGE = ± 20 V - - ± 250 nA

Vishay Semiconductors

V

mA

VV

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

g

ge

gc

on

off

tot

d(on)

r

d(off)

f

on

off

tot

d(on)

r

d(off)

f

Reverse bias safe operating area RBSOA

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

rr

rr

rr

rr

rr

rr

IC = 50 A, VCC = 600 V, VGE = 15 V

IC = 75 A, VCC = 600 V,

V

= 15 V, Rg = 5 

GE

L = 500 μH, T

= 25 °C

J

Energy losses
include tail and
diode recovery
Diode used
HFA16PB120

IC = 75 A, VCC = 600 V,
V

= 15 V, Rg = 5 

GE

L = 500 μH, T

T

= 150 °C, IC = 200 A, Rg = 22 

J

= 15 V to 0 V, VCC = 900 V,

V

GE

= 1200 V, L = 500 μH

V

P

= 125 °C

J

IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V

IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V,
T

= 125 °C

J

- 690 -

-65-

nCGate to emitter charge (turn-on) Q

- 250 -

-1.2-

-2.1-

mJTurn-off switching loss E

-3.3-

- 250 -

-38-

- 280 -

ns

-90-

-1.7-

-4.08-

mJTurn-off switching loss E

-5.78-

- 245 -

-48-

- 280 -

ns

- 140 -

Fullsquare

- 140 - ns

-13- A

- 860 - nC

- 210 - ns

-19- A

- 1880 - nC

Revision: 02-Aug-12

For technical questions within your region: [e-mail]

2

, [e-mail], [e-mail]

Document Number: 94722

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-GB90DA120U

www.vishay.com

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Maximum junction and storage temperature range T

Junction to case thermal resistance

IGBT

Case to sink thermal resistance, flat, greased surface R

Mounting torque, on terminals and heatsink - - 1.3 Nm

Weight -30-g

Case style SOT-227

J

R

, T

thJC

thCS

Stg

- 40 - 150 °C

- - 0.145

-0.05-

Vishay Semiconductors

°C/WDiode - - 0.35

160

140

120

100

80

60

40

20

Allowable Case Temperature (°C)

0

0 20 40 60 80 100 120 140 160

DC

IC - Continuous Collector Current (A)

Fig. 1 - Maximum DC IGBT Collector Current vs.

Case Temperature

200

150

100

Collector-to-Emitter Current (A)

-

C

I

50

VGE = 15 V

= 125 °C

T

J

T

TJ = 25 °C

0

0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0

V

Collector-to-Emitter Voltage (V)

CE -

Fig. 2 - Typical Collector to Emitter Current

Output Characteristics of IGBT

= 150 °C

J

160

140

120

100

80

60

40

20

Allowable Case Temperature (°C)

0

0 20 40 60 80 100

IF - Continuous Forward Current (A)

Fig. 3 - Allowable Forward Current vs. Case Temperature

Diode Leg

160

120

= 150 °C

T

J

80

TJ = 125 °C

40

- Forward Current (A)

F

I

0

0.0 1.0 2.0 3.0 4.0 5.0

V

Forward Voltage Drop (V)

FM -

= 25 °C

T

J

Fig. 4 - Typical Diode Forward Voltage Drop Characteristics

Revision: 02-Aug-12

For technical questions within your region: [e-mail]

3

, [e-mail], [e-mail]

Document Number: 94722

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000