C&H Technology VS-GB90DA120U User Manual

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Suite 108
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Fax [phone]

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Technical

Application

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www.vishay.com

SOT-227

Insulated Gate Bipolar Transistor

PRODUCT SUMMARY

V

CES

DC 90 A at 90 °C

I

C

typical at 75 A, 25 °C 3.3 V

V

CE(on)

(Ultrafast IGBT), 90 A

FEATURES

• NPT Generation V IGBT technology

•Square RBSOA

•HEXFRED

• Positive V

• Fully isolated package

• Speed 8 kHz to 60 kHz

• Very low internal inductance ( 5 nH typical)

• Industry standard outline

• UL approved file E78996

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

1200 V

BENEFITS

• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating

• Easy to assemble and parallel

• Direct mounting on heatsink

• Plug-in compatible with other SOT-227 packages

• Low EMI, requires less snubbing

VS-GB90DA120U

Vishay Semiconductors

®

low Qrr, low switching energy

temperature coefficient

CE(on)

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Gate to emitter voltage V

Power dissipation, IGBT P

Power dissipation, diode P

Isolation voltage V

Note

(1)

Maximum collector current admitted is 100 A, to do exceed the maximum temperature of terminals

CES

C

CM

LM

ISOL

TC = 25 °C 149

(1)

F

GE

D

D

= 90 °C 90

T

C

TC = 25 °C 76

= 90 °C 46

T

C

TC = 25 °C 862

= 90 °C 414

T

C

TC = 25 °C 357

= 90 °C 171

T

C

Any terminal to case, t = 1 min 2500 V

1200 V

200

200

± 20 V

A

W

Revision: 02-Aug-12

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VS-GB90DA120U

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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Collector to emitter voltage V

Gate threshold voltage V

Temperature coefficient of threshold voltage V

GE(th)

Collector to emitter leakage current I

Forward voltage drop, diode V

Gate to emitter leakage current I

BR(CES)

CE(on)

GE(th)

CES

FM

GES

VGE = 0 V, IC = 250 μA 1200 - -

VGE = 15 V, IC = 75 A - 3.3 3.8

V

= 15 V, IC = 75 A, TJ = 125 °C - 3.6 3.9

GE

V

= 15 V, IC = 75 A, TJ = 150 °C - 3.7 -

GE

VCE = VGE, IC = 250 μA 4 5 6

V

= VGE, IC = 250 μA, TJ = 125 °C - 3.2 -

CE

/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 12 - mV/°C

VGE = 0 V, VCE = 1200 V - 7 250 μA

V

= 0 V, VCE = 1200 V, TJ = 125 °C - 1.4 10

GE

V

= 0 V, VCE = 1200 V, TJ = 150 °C - 6.5 20

GE

VGE = 0 V, IF = 75 A - 3.4 5.0

= 0 V, IF = 75 A, TJ = 125 °C - 3.2 5.2

GE

V

= 0 V, IF = 75 A, TJ = 150 °C - 3.05 -

GE

VGE = ± 20 V - - ± 250 nA

Vishay Semiconductors

V

mA

VV

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

g

ge

gc

on

off

tot

d(on)

r

d(off)

f

on

off

tot

d(on)

r

d(off)

f

Reverse bias safe operating area RBSOA

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

rr

rr

rr

rr

rr

rr

IC = 50 A, VCC = 600 V, VGE = 15 V

IC = 75 A, VCC = 600 V,

V

= 15 V, Rg = 5 

GE

L = 500 μH, T

= 25 °C

J

Energy losses
include tail and
diode recovery
Diode used
HFA16PB120

IC = 75 A, VCC = 600 V,
V

= 15 V, Rg = 5 

GE

L = 500 μH, T

T

= 150 °C, IC = 200 A, Rg = 22 

J

= 15 V to 0 V, VCC = 900 V,

V

GE

= 1200 V, L = 500 μH

V

P

= 125 °C

J

IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V

IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V,
T

= 125 °C

J

- 690 -

-65-

nCGate to emitter charge (turn-on) Q

- 250 -

-1.2-

-2.1-

mJTurn-off switching loss E

-3.3-

- 250 -

-38-

- 280 -

ns

-90-

-1.7-

-4.08-

mJTurn-off switching loss E

-5.78-

- 245 -

-48-

- 280 -

ns

- 140 -

Fullsquare

- 140 - ns

-13- A

- 860 - nC

- 210 - ns

-19- A

- 1880 - nC

Revision: 02-Aug-12

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-GB90DA120U

www.vishay.com

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Maximum junction and storage temperature range T

Junction to case thermal resistance

IGBT

Case to sink thermal resistance, flat, greased surface R

Mounting torque, on terminals and heatsink - - 1.3 Nm

Weight -30-g

Case style SOT-227

J

R

, T

thJC

thCS

Stg

- 40 - 150 °C

- - 0.145

-0.05-

Vishay Semiconductors

°C/WDiode - - 0.35

160

140

120

100

80

60

40

20

Allowable Case Temperature (°C)

0

0 20 40 60 80 100 120 140 160

DC

IC - Continuous Collector Current (A)

Fig. 1 - Maximum DC IGBT Collector Current vs.

Case Temperature

200

150

100

Collector-to-Emitter Current (A)

-

C

I

50

VGE = 15 V

= 125 °C

T

J

T

TJ = 25 °C

0

0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0

V

Collector-to-Emitter Voltage (V)

CE -

Fig. 2 - Typical Collector to Emitter Current

Output Characteristics of IGBT

= 150 °C

J

160

140

120

100

80

60

40

20

Allowable Case Temperature (°C)

0

0 20 40 60 80 100

IF - Continuous Forward Current (A)

Fig. 3 - Allowable Forward Current vs. Case Temperature

Diode Leg

160

120

= 150 °C

T

J

80

TJ = 125 °C

40

- Forward Current (A)

F

I

0

0.0 1.0 2.0 3.0 4.0 5.0

V

Forward Voltage Drop (V)

FM -

= 25 °C

T

J

Fig. 4 - Typical Diode Forward Voltage Drop Characteristics

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V

CES -

Collector-to-Emitter Voltage (V)

I

CES

-

Collector-to-Emitter Current (A)

0.01

0.1

1

10

100

0.0001

0.001

0 200 400 600 800 1000 1200

TJ = 25 °C

T

J

= 125 °C

T

J

= 150 °C

V

GE(th)

Threshold Voltage (V)

IC (A)

3.5

4

4.5

5

5.5

6

2

2.5

3

0.20 0.40 0.60 0.80 1.00

TJ = 25 °C

T

J

= 125 °C

VS-GB90DA120U

Vishay Semiconductors

100

90

80

70

60

50

40

30

20

Collector-to-Emitter Current (A)

10

-

C

I

0

4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0

V

Gate-to-Emitter Voltage (V)

GE -

= 125 °C

T

J

TJ = 25 °C

Fig. 5 - Typical IGBT Transfer Characteristics

Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current

5

4.5

3.5

2.5

Collector-to-Emitter Voltage (V)

1.5

-

CE

V

4

3

2

1

0 20 40 60 80 100 120 140 160

IC = 100 A

I

= 75 A

C

= 50 A

I

C

I

= 25 A

C

TJ - Junction Temperature (°C)

Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction

Temperature, V

5

4.5

4

3.5

3

2.5

2

1.5

1

Switching Energy (mJ)

0.5

0

10 20 30 40 50 60 70 80 90 100

= 15 V

GE

E

off

E

on

IC - Collector Current (A)

Fig. 9 - Typical IGBT Energy Losses vs. I

TJ = 125 °C, L = 500 μH, VCC = 600 V,

R

= 5 , VGE = 15 V, Diode used HFA16PB120

g

C

Revision: 02-Aug-12

Fig. 7 - Typical IGBT Threshold Voltage

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t

d(off)

t

d(on)

0.1

Switching Time (μs)

0.01
0 20 40 60 80

t

r

IC - Collector Current (A)

Fig. 10 - Typical IGBT Switching Time vs. I

TJ = 125 °C, L = 500 μH, VCC = 600 V,

R

= 5 , VGE = 15 V, Diode used HFA16PB120

g

4

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t

f

C

Document Number: 94722

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R

g

(Ω)

Energy Losses (mJ)

4

6

8

10

12

14

0

2

4

0 10 20 30 40 50

E

on

E

off

Switching Time (µs)

RG (Ω)

0203010 40 50

10

10 000

1000

100

t

d(on)

t

d(off)

t

f

t

r

150

200

250

300

t

rr

(ns)

50

100

1000

100

dIF/dt (A/μs)

25 °C

125 °C

VR = 200 V
I

F

= 50 A

3000

2500

V

= 200 V

R

I

= 50 A

F

VS-GB90DA120U

Vishay Semiconductors

Fig. 11 - Typical IGBT Energy Loss vs. Rg,

T

= 125 °C, IC = 75 A, L = 500 μH,

V

J

= 600 V, VGE = 15 V, Diode used HFA16PB120

CC

(nC)

rr

Q

2000

1500

1000

500

125 °C

25 °C

100 1000

dIF/dt (A/μs)

Fig. 14 - Stored Charge vs. dI

40

VR = 200 V

35

I

= 50 A

F

30

(A)

RR

I

25

20

15

10

125 °C

25 °C

/dt of Diode

F

Revision: 02-Aug-12

5

1000100

dIF/dt (A/μs)

Fig. 12 - Typical IGBT Switching Time vs. R

TJ = 125 °C, L = 500 μH, VCC = 600 V,

R

= 5 , VGE = 15 V

g

Fig. 13 - Typical t

V

= 200 V, IF = 50 A

RR

Diode vs. dIF/dt

rr

g

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Fig. 15 - Typical Reverse Recovery Current vs. dI

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/dt of Diode

F

www.vishay.com

Rectangular Pulse Duration (s)

Z

thJC

-

Thermal Impedance

Junction to Case (°C/W)

0.01

0.1

1

0.001

0.0001 0.001 0.01 0.1 1 10

P

DM

t

2

t

1

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

0.75

0.50

0.25

0.1

0.05

0.02
DC

Rectangular Pulse Duration (s)

Z

thJC

-

Thermal Impedance

Junction to Case (°C/W)

0.01

0.1

1

0.001

0.0001 0.001 0.01 0.1 1 10

P

DM

t

2

t

1

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

0.75

0.50

0.25

0.1

0.05

0.02

DC

VS-GB90DA120U

Vishay Semiconductors

Fig. 16 - Maximum Thermal Impedance Z

Fig. 17 - Maximum Thermal Impedance Z

1000

Characteristics (IGBT)

thJC

Characteristics (Diode)

thJC

100

(A)

C

I

10

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Fig. 18 - IGBT Reverse Bias SOA, TJ = 150 °C, V

1

10 100 1000 10 000

VCE (V)

6

= 15 V,

GE

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Document Number: 94722

VS-GB90DA120U

L

Diode clamp/

D.U.T.

D.U.T./

driver

- 5 V

+

-

R

g

V

CC

+

-

t = 5 µs

t

d(on)

t

f

t

r

90 %

t

d(off)

10 %

90 %

10 %

5 %

V

C

I

C

E

on

E

off

Ets = (Eon + E

off

)

1

2

3

www.vishay.com

L

V

*

50 V

C

1000 V

1

* Driver same type as D.U.T.; VC = 80 % of V
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id

Fig. 19a - Clamped Inductive Load Test Circuit Fig. 19b - Pulsed Collector Current Test Circuit

D.U.T.

2

ce(max.)

Vishay Semiconductors

V

R =

I

CM

D.U.T.

R

g

CC

+

-

V

CC

Fig. 20a - Switching Loss Test Circuit

Fig. 20b - Switching Loss Waveforms Test Circuit

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Document Number: 94722

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1

- Insulated Gate Bipolar Transistor (IGBT)

- Vishay Semiconductors product

2

- B = IGBT Generation 5

3

- Current rating (90 = 90 A)

4

- Circuit configuration (D = Single switch with antiparallel diode)

5

6

- Voltage rating (120 = 1200 V)

8

7

- Speed/type (U = Ultrafast IGBT)

Device code

5

1

32 4 6 7 8

GVS- B 90 D A 120 U

- Package indicator (A = SOT-227)

ORDERING INFORMATION TABLE

CIRCUIT CONFIGURATION

CIRCUIT

CONFIGURATION CODE

CIRCUIT

VS-GB90DA120U

Vishay Semiconductors

CIRCUIT DRAWING

3 (C)

Single switch with
antiparallel diode

Dimensions www.vishay.com/doc?95423

Packaging information www.vishay.com/doc?95425

D

2 (G)

1, 4 (E)

LINKS TO RELATED DOCUMENTS

Lead Assignment

43

1

2

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38.30 (1.508)

37.80 (1.488)

-A-

12.50 (0.492)

13.00 (0.512)

7.45 (0.293)

7.60 (0.299)

Ø 4.10 (0.161)
Ø 4.30 (0.169)

30.50 (1.200)

29.80 (1.173)

31.50 (1.240)

32.10 (1.264)

14.90 (0.587)

15.20 (0.598)

6.25 (0.246)

6.50 (0.256)

25.70 (1.012)

24.70 (0.972)

2.10 (0.083)

2.20 (0.087)

-B-

R full

2.20 (0.087)

1.90 (0.075)

8.30 (0.327)

7.70 (0.303)

4 x

4.10 (0.161)

4.50 (0.177)

-C-

0.13 (0.005)

12.30 (0.484)

11.70 (0.460)

25.00 (0.984)

25.50 (1.004)

M M M

0.25 (0.010)

CA B

4 x M4 nuts

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay Semiconductors

SOT-227 Generation II

Note

• Controlling dimension: millimeter

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Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 12-Mar-12

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Document Number: 91000