C&H Technology VS-GB75TP120U User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

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C & H TECHNOLOGY, INC. ● 6121 BAKER RD. SUITE 108 ● MINNETONKA, MINNESOTA 55345 ●

800-274-4284 ● 952-933-6190 ● FAX: [phone] ● WWW.CHTECHNOLOGY.COM

www.vishay.com

INT-A-PAK

Molding Type Module IGBT,
2 in 1 Package, 1200 V, 75 A

FEATURES

• High short circuit capability, self limiting to 6 x I

• 10 μs short circuit capability

•V

• Rugged with ultrafast performance

• Square RBSOA

• Low inductance case

• Fast and soft reverse recovery antiparallel FWD

• Isolated copper baseplate using DCB (Direct Copper

• Material categorization: For definitions of compliance

with positive temperature coefficient

CE(on)

Bonding) technology

please see www.vishay.com/doc?99912

VS-GB75TP120U

Vishay Semiconductors

C

PRODUCT SUMMARY

V

CES

at TC = 80 °C 75 A

I

C

(typical)

V

CE(on)

at I

= 75 A, 25 °C

C

Package INT-A-PAK

Circuit Half Bridge

1200 V

3.2 V

TYPICAL APPLICATIONS

• Switching mode power supplies

• Inductive heating

•UPS

• Electronic welders

DESCRIPTION

Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Gate to emitter voltage V

Collector current I

Pulsed collector current I

Diode continuous forward current I

Diode maximum forward current I

Maximum power dissipation P

Short circuit withstand time t

RMS isolation voltage V

2

t-value, diode I2tV

I

Note

(1)

Repetitive rating: Pulse width limited by maximum junction temperature.

CM

CES

GES

C

F

FM

SC

ISOL

TC = 25 °C 105

= 80 °C 75

T

C

(1)

D

tp = 1 ms 150

TJ = 150 °C 500 W

TJ = 125 °C 10 μs

f = 50 Hz, t = 1 min 2500 V

= 0 V, t = 10 ms, TJ = 125 °C 1170 A2s

R

1200

± 20

75

150

V

A

Revision: 17-May-13

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Document Number: 94822

VS-GB75TP120U

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IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

(BR)CES

TJ = 25 °C 1200 - -

VGE = 15 V, IC = 75 A, TJ = 25 °C - 3.2 -

Gate to emitter threshold voltage V

Collector cut-off current I

Gate to emitter leakage current I

CE(on)

GE(th)

CES

GES

V

= 15 V, IC = 75 A, TJ = 125 °C - 3.7 -

GE

VCE = VGE, IC = 3 mA, TJ = 25 °C 4.5 5.1 5.5

VCE = V

VGE = V

, VGE = 0 V, TJ = 25 °C - - 2.0 mA

CES

, VCE = 0 V, TJ = 25 °C - - 400 nA

GES

SWITCHING CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Input capacitance C

Reverse transfer capacitance C

SC data I

Stray inductance L

Module lead resistance, terminal to chip R

d(on)

r

d(off)

f

on

off

d(on)

r

d(off)

f

on

off

ies

oes

res

SC

CE

CC’+EE’

VCC = 600 V, IC = 75 A, Rg = 15 ,
V

= ± 15 V, TJ = 25 °C

GE

VCC = 600 V, IC = 75 A, Rg = 15 ,
V

= ± 15 V, TJ = 125 °C

GE

VGE = 0 V, VCE = 30 V, f = 1.0 MHz, 
T

= 25 °C

J

tsc  10 μs, VGE = 15 V, TJ = 125 °C, 

= 900 V, V

V

CC

CEM

 1200 V

TC = 25 °C - 0.75 - m

Vishay Semiconductors

VCollector to emitter voltage V

- 160 -

-80-

- 420 -

- 110 -

-5.7-

-1.9-

- 140 -

-90-

- 460 -

- 150 -

-6.8-

-3.2-

-4.3-

-0.40-

-0.16-

- 235 - A

- - 30 nH

ns

mJ

ns

mJ

nFOutput capacitance C

DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

= 25 °C - 1.9 2.3

T

Diode forward voltage V

Diode reverse recovery charge Q

F

rr

IF = 75 A

IF = 75 A, VR = 600 V,

Diode peak reverse recovery current I

Diode reverse recovery energy E

rr

rec

Revision: 17-May-13

For technical questions within your region: [e-mail]

/dt = - 2000 A/μs,

dI

F

V

= - 15 V

GE

2

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

J

T

= 125 °C - 2.0 2.4

J

= 25 °C - 100 -

T

J

T

= 125 °C - 125 -

J

TJ = 25 °C - 80 -

T

= 125 °C - 100 -

J

TJ = 25 °C - 3.0 -

T

= 125 °C - 6.0 -

J

Document Number: 94822

V

μC

A

mJ

150

125

100

75

50

25

0

01 3245

VCE (V)

I

C

(A)

VGE = 15 V

125 °C25 °C

025 7550 100 125 150

E

on

E

off

IC (A)

E

on

, E

off

(mJ)

0

8

4

2

6

10

12

14

16

VGE = ± 15 V

T

J

= 125 °C

R

g

= 15 Ω

V

CC

= 600 V

Rg (Ω)

E

on

, E

off

(mJ)

010 3020 40 50

0

8

4

2

6

10

12

14

16

VGE = ± 15 V

T

J

= 125 °C

I

C

= 75 A

V

CC

= 600 V

E

on

E

off

VS-GB75TP120U

www.vishay.com

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Operating junction temperature range T

Storage temperature range T

Junction to case

IGBT (per 1/2 module)

Case to sink R

Mounting torque

Weight of module 160 g

R

J

STG

thJC

thCS

Conductive grease applied - 0.05 -

Power terminal screw: M5 2.5 to 5.0

Mounting screw: M6 3.0 to 5.0

Vishay Semiconductors

- 40 - 150

- 40 - 125

- - 0.25

°C

K/WDiode (per 1/2 module) - - 0.40

Nm

Fig. 1 - Typical Output Characteristics

150

VCE = 20 V

125

100

75

(A)

C

I

50

25

0

56 87 9 10 11 12

Revision: 17-May-13

Fig. 2 - Typical Transfer Characteristics

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125 °C

25 °C

VGE (V)

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 3 - Total Switching Loss vs. I

Fig. 4 - Total Switching Loss vs. R

3

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g

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15

12

9

6

3

0

Qg (nC)

V

GE

(V)

0 250 750500 1000

VCC = 600 V

T

J

= 25 °C

I

C

= 75 A

0 25 50 75 100 125 150 175

10

3

10

2

10

1

IC (A)

t (ns)

t

d(off)

t

d(on)

t

f

t

r

VGE = ± 15 V

T

J

= 125 °C

V

CC

= 600 V

R

g

= 15 Ω

VS-GB75TP120U

Vishay Semiconductors

Fig. 5 - Gate Charge Characteristics

1

10

C

ies

0

C (nF)

10

-1

10

C

oes

C

res

0 5 10 15 20 25 30 35

VCE (V)

Fig. 6 - Typical Capacitance vs. Collector to Emitter Current

150

125

100

25 °C

Fig. 7 - Typical Switching Times vs. I

4

10

t

d(off)

3

t (ns)

10

2

10

V

CC

I

= 75 A

C

t
t

t

= 600 V

r

d(on)

f

VGE = ± 15 V

=

125 °C

T

-1

10

J

020406080100120

Rg (Ω)

Fig. 8 - Typical Switching Times vs.Gate Resistance R

125 °C

C

g

Revision: 17-May-13

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

75

(A)

F

I

50

25

0

0 0.5 1.51 2 2.5 3

VF (V)

Fig. 9 - Diode Typical Forward Characteristics

4

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t (s)

Z

thJC

(K/W)

10

0

10

-1

10

-2

10

-3

10

-1

10

0

10

-2

10

-3

10

-4

IGBT

Diode

1

6
7

3

2

5
4

CIRCUIT CONFIGURATION

VS-GB75TP120U

Vishay Semiconductors

Fig. 10 - Transient Thermal Impedance

Revision: 17-May-13

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95524

5

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Document Number: 94822

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Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

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Document Number: 91000