C&H Technology VS-GB75TP120U User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

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Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

C & H TECHNOLOGY, INC. ● 6121 BAKER RD. SUITE 108 ● MINNETONKA, MINNESOTA 55345 ●

800-274-4284 ● 952-933-6190 ● FAX: [phone] ● WWW.CHTECHNOLOGY.COM

www.vishay.com

INT-A-PAK

Molding Type Module IGBT,
2 in 1 Package, 1200 V, 75 A

FEATURES

• High short circuit capability, self limiting to 6 x I

• 10 μs short circuit capability

•V

• Rugged with ultrafast performance

• Square RBSOA

• Low inductance case

• Fast and soft reverse recovery antiparallel FWD

• Isolated copper baseplate using DCB (Direct Copper

• Material categorization: For definitions of compliance

with positive temperature coefficient

CE(on)

Bonding) technology

please see www.vishay.com/doc?99912

VS-GB75TP120U

Vishay Semiconductors

C

PRODUCT SUMMARY

V

CES

at TC = 80 °C 75 A

I

C

(typical)

V

CE(on)

at I

= 75 A, 25 °C

C

Package INT-A-PAK

Circuit Half Bridge

1200 V

3.2 V

TYPICAL APPLICATIONS

• Switching mode power supplies

• Inductive heating

•UPS

• Electronic welders

DESCRIPTION

Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Gate to emitter voltage V

Collector current I

Pulsed collector current I

Diode continuous forward current I

Diode maximum forward current I

Maximum power dissipation P

Short circuit withstand time t

RMS isolation voltage V

2

t-value, diode I2tV

I

Note

(1)

Repetitive rating: Pulse width limited by maximum junction temperature.

CM

CES

GES

C

F

FM

SC

ISOL

TC = 25 °C 105

= 80 °C 75

T

C

(1)

D

tp = 1 ms 150

TJ = 150 °C 500 W

TJ = 125 °C 10 μs

f = 50 Hz, t = 1 min 2500 V

= 0 V, t = 10 ms, TJ = 125 °C 1170 A2s

R

1200

± 20

75

150

V

A

Revision: 17-May-13

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1

, [e-mail], [e-mail]

Document Number: 94822

VS-GB75TP120U

www.vishay.com

IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

(BR)CES

TJ = 25 °C 1200 - -

VGE = 15 V, IC = 75 A, TJ = 25 °C - 3.2 -

Gate to emitter threshold voltage V

Collector cut-off current I

Gate to emitter leakage current I

CE(on)

GE(th)

CES

GES

V

= 15 V, IC = 75 A, TJ = 125 °C - 3.7 -

GE

VCE = VGE, IC = 3 mA, TJ = 25 °C 4.5 5.1 5.5

VCE = V

VGE = V

, VGE = 0 V, TJ = 25 °C - - 2.0 mA

CES

, VCE = 0 V, TJ = 25 °C - - 400 nA

GES

SWITCHING CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Turn-off switching loss E

Input capacitance C

Reverse transfer capacitance C

SC data I

Stray inductance L

Module lead resistance, terminal to chip R

d(on)

r

d(off)

f

on

off

d(on)

r

d(off)

f

on

off

ies

oes

res

SC

CE

CC’+EE’

VCC = 600 V, IC = 75 A, Rg = 15 ,
V

= ± 15 V, TJ = 25 °C

GE

VCC = 600 V, IC = 75 A, Rg = 15 ,
V

= ± 15 V, TJ = 125 °C

GE

VGE = 0 V, VCE = 30 V, f = 1.0 MHz, 
T

= 25 °C

J

tsc  10 μs, VGE = 15 V, TJ = 125 °C, 

= 900 V, V

V

CC

CEM

 1200 V

TC = 25 °C - 0.75 - m

Vishay Semiconductors

VCollector to emitter voltage V

- 160 -

-80-

- 420 -

- 110 -

-5.7-

-1.9-

- 140 -

-90-

- 460 -

- 150 -

-6.8-

-3.2-

-4.3-

-0.40-

-0.16-

- 235 - A

- - 30 nH

ns

mJ

ns

mJ

nFOutput capacitance C

DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

= 25 °C - 1.9 2.3

T

Diode forward voltage V

Diode reverse recovery charge Q

F

rr

IF = 75 A

IF = 75 A, VR = 600 V,

Diode peak reverse recovery current I

Diode reverse recovery energy E

rr

rec

Revision: 17-May-13

For technical questions within your region: [e-mail]

/dt = - 2000 A/μs,

dI

F

V

= - 15 V

GE

2

, [e-mail], [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

J

T

= 125 °C - 2.0 2.4

J

= 25 °C - 100 -

T

J

T

= 125 °C - 125 -

J

TJ = 25 °C - 80 -

T

= 125 °C - 100 -

J

TJ = 25 °C - 3.0 -

T

= 125 °C - 6.0 -

J

Document Number: 94822

V

μC

A

mJ